HMC504LC4B v00.1108 Amplifiers - Low Noise - SMT 7 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Typical Applications Features This HMC504LC4B is ideal for: Noise Figure: 2.2 dB @ 20 GHz • Point-to-Point Radios Gain: 19 dB • Point-to-Multi-Point Radios P1dB Output Power: +17 dBm • Military & Space Supply Voltage: +4V @ 90mA • Test Instrumentation Output IP3: +26 dBm 50 Ohm matched Input/Output 24 Lead 4x4mm SMT Package: 16mm2 General Description Functional Diagram The HMC504LC4B is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm ceramic surface mount package. The amplifier operates between 14 and 27 GHz, providing up to 19 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +26 dBm, while requiring only 90 mA from a +4V supply. The P1dB output power of up to +17 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC504LC4B also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios or VSAT applications. This versatile LNA is also available in die form as the HMCALH476. Electrical Specifications, TA = +25 °C, Vdd = +4V, Idd = 90 mA[2] Parameter Min. Frequency Range Gain [1] Gain Variation over Temperature Noise Figure [1] Typ. Max. Min. 14 - 20 16.5 19 16 0.015 2.2 Typ. Max. Min. 20 - 24 18.5 14 0.017 3 2.5 Typ. Max. 24 - 27 4.2 Units GHz 17 dB 0.018 dB / °C 4.5 6 dB Input Return Loss 15 9 7 Output Return Loss 15 12 9.5 dB Output Power for 1 dB Compression [1] 15 16.5 17 dBm Saturated Output Power (Psat) [1] 19.5 19.5 19 dBm Output Third Order Intercept (IP3) 24.5 25.5 26 dBm 90 90 90 mA Supply Current (Idd) (Vdd = 4V, Vgg = -0.3V Typ.) dB [1] Board loss subtracted out for gain, power and noise figure measurement [2] Adjust Vgg between -1 to 0.3V to achieve Idd = 90mA 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 25 20 GAIN (dB) RESPONSE (dB) 18 S21 S11 S22 5 -5 16 +25C +85C - 40C 14 -15 12 -25 10 10 12 14 16 18 20 22 24 26 28 30 32 13 15 17 FREQUENCY (GHz) Input Return Loss vs. Temperature 21 23 25 27 29 Output Return Loss vs. Temperature 0 0 +25C +85C - 40C +25C +85C - 40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 19 FREQUENCY (GHz) -10 -15 -20 -10 -15 Amplifiers - Low Noise - SMT 22 15 -20 -25 -25 13 15 17 19 21 23 25 27 29 13 15 17 FREQUENCY (GHz) 19 21 23 25 27 29 25 27 29 FREQUENCY (GHz) Output IP3 vs. Temperature Noise Figure vs. Temperature [1] 10 35 +25C +85C - 40C 8 30 25 6 IP3 (dBm) NOISE FIGURE (dB) 7 Gain vs. Temperature [1] Broadband Gain & Return Loss [1] 4 20 +25C +85C - 40C 15 2 10 0 5 13 15 17 19 21 23 25 27 FREQUENCY (GHz) 13 15 17 19 21 23 FREQUENCY (GHz) [1] Board loss subtracted out for gain, power and noise figure measurement For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC504LC4B v00.1108 Psat vs. Temperature [1] 20 24 16 20 12 Psat (dBm) P1dB (dBm) P1dB vs. Temperature [1] +25C +85C - 40C 8 4 16 +25C +85C - 40C 12 8 0 4 13 15 17 19 21 23 25 27 29 13 15 17 19 FREQUENCY (GHz) 21 23 25 27 29 FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Compression @ 21 GHz [1] 20 Pout (dBm), GAIN (dB), PAE (%) 0 -10 ISOLATION (dB) Amplifiers - Low Noise - SMT 7 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz -20 +25C +85C - 40C -30 -40 -50 -60 13 15 17 19 21 23 25 27 16 12 8 4 0 -4 -20 29 Pout Gain PAE -15 -10 FREQUENCY (GHz) -5 0 5 INPUT POWER (dBm) 22 7 20 6 18 5 16 4 14 3 12 2 10 1 0 8 3.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 21 GHz [1] 4 4.5 Vdd (V) [1] Board loss subtracted out for gain, power and noise figure measurement 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC504LC4B GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 7 Absolute Maximum Ratings Drain Bias Voltage +4.5V RF Input Power +6 dBm Gate Bias Voltage -1 to 0.3V Channel Temperature 180 °C Continuous Pdiss (T = 85 °C) (derate 20 mW/°C above 85 °C) 1.9 W Thermal Resistance (Channel to die bottom) 50 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Amplifiers - Low Noise - SMT v00.1108 NOTES: 1.PACKAGE BODY MATERIAL: ALUMINA. 2.LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4.LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5.PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC504LC4B v00.1108 Amplifiers - Low Noise - SMT 7 7-5 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Pin Descriptions Pin Number Function Description 1 - 3, 5 - 8, 11 - 16, 18, 19, 24 GND Package bottom has exposed metal paddle that must be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohms. 17 RFOUT This pad is AC coupled and matched to 50 Ohms. 20 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 21 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. Interface Schematic Application Circuit Component Value C1, C2 100 pF C3, C4 10,000 pF C5, C6 4.7 µF For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC504LC4B v00.1108 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 122789 Item Description J1, J2 2.92mm PCB mount K-Connector J3 - J6 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 10,000pF Capacitor, 0603 Pkg. C5, C6 4.7 µF Capacitor, Tantalum U1 HMC504LC4B Amplifier PCB [2] 122787 Evaluation PCB [3] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [3] Due to the very high frequency operation of this product a custom LC4B PCB footprint and solder stencil are required for this design. Performance shown in this data sheet was produced using this custom footprint. DO NOT USE Hittite’s standard LC4B footprint. Please contact Applications for details. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6