HMC605LP3 / 605LP3E v03.0809 LOW NOISE AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Typical Applications Features The HMC605LP3 / HMC605LP3E is ideal for: Noise Figure: 1.1 dB • Wireless Infrastructure Output IP3: +31 dBm • Customer Premise Equipment Gain: 20 dB • Fixed Wireless Low Loss & Failsafe Bypass Path • WiMAX & WiBro Single Supply: +3V or +5V • Tower Mounted Amplifiers 50 Ohm Matched Input / Output Functional Diagram General Description The HMC605LP3 / HMC605LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrate a low loss LNA bypass path on the IC. The amplifier is ideal for WiBro & WiMAX receivers operating between 2.3 and 2.7 GHz and provides 1.1 dB noise figure, 20 dB of gain and +31 dBm output IP3 from a single supply of +5V @ 74 mA. Input and output return losses are 14 and 15 dB respectively with no external matching components required. A single control line (Vctl) is used to switch between LNA mode and a low 2 dB loss bypass mode and reduces the current consumption to 10 μA. The HMC605LP3 is failsafe and will default to the bypass mode with no DC power applied. Electrical Specifi cations, TA = +25° C, Vdd = +5V LNA Mode Bypass Mode Parameter Units Min. Frequency Range Typ. Max. Min. 2.3 - 2.7 Gain 17.5 Gain Variation Over Temperature Typ. Max. 2.3 - 2.7 20.5 -3.0 0.012 GHz -2.0 dB 0.002 dB / °C Noise Figure 1.1 Input Return Loss 14 1.3 13 dB dB Output Return Loss 15 13 dB Reverse Isolation 33 Output Power for 1dB Compression (P1dB)* 17 16 dBm Output Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) 31 Supply Current (Idd) 74 dB dBm 0.01 mA LNA Mode to Bypass Mode - 90 6.0 ns Bypass Mode to LNA Mode 60 - ns Swtiching Speed * P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN. 8 - 230 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 30 25 2.5 20 2 15 1.5 10 1 GAIN (dB), P1dB (dBm) 10 S21 S11 S22 0 -10 -20 Gain P1dB 5 -30 -40 0.5 Noise Figure 0 0 1 2 3 4 5 6 3 3.5 FREQUENCY (GHz) 4 4.5 5 Vdd (Vdc) LNA Gain vs. Temperature LNA Noise Figure vs. Temperature 1.6 24 NOISE FIGURE (dB) GAIN (dB) 22 20 18 +25C +85C -40C 16 14 2.3 2.4 2.5 2.6 1.2 0.8 +25C -40C +85C 0.4 0 2.3 2.7 2.4 FREQUENCY (GHz) 1.5 22 1.3 NOISE FIGURE (dBm) GAIN (dB) 2.6 2.7 2.6 2.7 LNA Noise Figure vs. Vdd 24 20 18 +3V +5V 16 2.4 2.5 FREQUENCY (GHz) LNA Gain vs. Vdd 14 2.3 NOISE FIGURE (dB) RESPONSE (dB) 20 LOW NOISE AMPLIFIERS - SMT 8 LNA – Gain, Noise Figure & Power vs. Supply Voltage @ 2.5 GHz LNA Broadband Gain & Return Loss 2.5 FREQUENCY (GHz) 1.1 3V 5V 0.9 0.7 2.6 2.7 0.5 2.3 2.4 2.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 231 HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LNA Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) LNA Input Return Loss vs. Temperature -10 -15 -20 +25C +85C -40C -25 -30 2.3 2.3 2.4 2.5 2.5 +25C +85C -40C -10 -15 -20 -25 2.5 2.6 2.6 -30 2.3 2.7 2.3 2.4 FREQUENCY (GHz) 2.5 2.5 2.5 2.6 2.7 2.6 2.7 LNA Output IP3 vs. Vdd 40 35 35 33 IP3 (dBm) 30 31 29 25 +3V +5V 20 +25C -40C +85C 27 25 2.3 2.3 2.4 2.5 2.5 2.5 15 2.6 2.6 10 2.3 2.7 2.3 2.4 LNA Psat vs. Temperature 2.5 2.6 24 +25C +85C -40C +25C +85C -40C 22 P1dB (dBm) 22 PSAT (dBm) 2.5 LNA Output P1dB vs. Temperature 24 20 18 16 14 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) 20 18 16 2.4 2.5 FREQUENCY (GHz) 8 - 232 2.6 FREQUENCY (GHz) LNA Output IP3 vs. Temperature IP3 (dBm) LOW NOISE AMPLIFIERS - SMT 8 2.6 2.7 14 2.3 2.4 2.5 2.6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2.7 HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LNA Output P1dB vs. Vdd LNA Reverse Isolation vs. Temperature 20 ISOLATION (dB) P1dB (dBm) -10 12 +3V +5V 8 +25C +85C -40C -20 -30 4 0 2.3 2.4 2.5 2.6 -40 2.3 2.7 2.4 FREQUENCY (GHz) Bypass Mode Broadband Insertion Loss & Return Loss 2.7 INSERTION LOSS (dB) 0 -10 RESPONSE (dB) 2.6 Bypass Mode Insertion Loss vs. Temperature 0 -20 S21 S11 S22 -30 1 -1 -2 +25C +85C -40C -3 -4 -5 2.3 -40 2 3 4 5 6 2.4 Bypass Mode Input Return Loss vs. Temperature 2.6 2.7 Bypass Mode Output Return Loss vs. Temperature 0 -5 -5 RETURN LOSS (dB) 0 -10 -15 +25C +85C -40C -20 2.5 FREQUENCY (GHz) FREQUENCY (GHz) RETURN LOSS (dB) 2.5 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT 0 16 -25 -30 2.3 8 -10 -15 +25C +85C -40C -20 -25 2.3 2.4 2.5 2.5 2.5 FREQUENCY (GHz) 2.6 2.6 2.7 -30 2.3 2.3 2.4 2.5 2.5 2.5 2.6 2.6 2.7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 233 HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LOW NOISE AMPLIFIERS - SMT 8 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) (Vdd = +5.0 Vdc) Typical Supply Current vs. Vdd +8 Vdc LNA Mode Bypass Mode Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 13.7 mW/°C above 85 °C) 890 mW Thermal Resistance (channel to ground paddle) 73 °C/W Storage Temperature -65 to +150° C Operating Temperature Vdd (Vdc) Idd (mA) +5 74 +3 28 +15 dBm +30 dBm Truth Table -40 to +85° C LNA Mode Vctl = Vdd ±0.3V Bypass Mode Vctl= 0V ±0.3V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC605LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC605LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 605 XXXX [2] 605 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 8 - 234 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Pin Number Function Description 1, 2, 5, 6, 8, 12, 13 N/C No connection necessary. These pins may be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. See application circuit. 4, 7, 9, 11, 15 GND These pins must be connected to RF/DC ground. 10 RFOUT This pin is AC coupled and matched to 50 Ohms. 14 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. 16 Vctl Mode Control Voltage. See truth table. Interface Schematic LOW NOISE AMPLIFIERS - SMT 8 Pin Descriptions Application Circuit Components Value C1, C2 100pF C3 10KpF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 235 HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Evaluation PCB LOW NOISE AMPLIFIERS - SMT 8 List of Materials for Evaluation PCB 117160 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J6 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3 10 KpF Capacitor, 0402 Pkg. U1 HMC605LP3 / HMC605LP3E Amplifier PCB [2] 117158 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR 8 - 236 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC605LP3 / 605LP3E v03.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 8 LOW NOISE AMPLIFIERS - SMT Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 237