HMC667LP2 / 667LP2E v02.1110 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Typical Applications Features The HMC667LP2(E) is ideal for: Low Noise Figure: 0.75 dB • WiMAX, WiBro & Fixed Wireless High Gain: 19 dB • SDARS & WLAN Receivers High Output IP3: +29.5 dBm • Infrastructure & Repeaters Single Supply: +3V to +5V • Access Points 6 Lead 2x2mm DFN Package: 4 mm2 • Telematics & DMB Functional Diagram General Description The HMC667LP2(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for WiMAX, WLAN and fixed wireless receivers operating between 2300 and 2700 MHz. This self-biased LNA has been optimized to provide 0.75 dB noise figure, 19 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC667LP2(E) can also operate from a +3V supply for lower power applications. Electrical Specifi cations, TA = +25° C Vdd = +3 Vdc Vdd = +5 Vdc Parameter Units Min. Frequency Range Gain Max. Min. 2300 - 2700 14 17.5 16 Typ. Max. 2300 - 2700 MHz 19 dB Gain Variation Over Temperature 0.01 Noise Figure 0.9 Input Return Loss 10 12 dB Output Return Loss 15 14 dB 16.5 dBm 17 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 7-1 Typ. 9.5 0.01 1.2 11.5 13.5 12.5 Output Third Order Intercept (IP3) 22 Supply Current (Idd) 24 0.75 dB/ °C 1.1 29.5 32 59 dB dBm 75 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 20 Vdd=5V S21 22 10 20 GAIN (dB) RESPONSE (dB) 15 5 S11 0 -5 18 16 -10 Vdd=3V -15 Vdd=5V Vdd=3V -20 -25 0.5 +25C +85C -40C 14 S22 12 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 2 5 Input Return Loss vs. Temperature [1] 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 Output Return Loss vs. Temperature [1] 0 0 RETURN LOSS (dB) +25C +85C -40C -5 -10 -15 -20 +25C +85C -40C -5 -10 AMPLIFIERS - LOW NOISE - SMT 24 25 RETURN LOSS (dB) 7 Gain vs. Temperature Broadband Gain & Return Loss -15 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 2.9 3 P1dB vs. Temperature Reverse Isolation vs. Temperature [1] -20 20 -25 18 16 -30 P1dB (dBm) ISOLATION (dB) Vdd=5V -35 +25C +85C -40C -40 14 Vdd=3V 12 10 -45 +25C +85C -40C 8 6 -50 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 [1] Vdd = 5V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Psat vs. Temperature Noise Figure vs. Temperature [1] 20 Vdd=5V Vdd=5V Vdd=3V 1.4 18 +25C 1.2 +85C 16 Psat (dBm) NOISE FIGURE (dB) 1 0.8 Vdd=3V 14 12 0.6 10 0.4 8 +25C +85C -40C -40C 0.2 6 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.8 2.9 3 Output IP3 vs. Temperature 36 34 +25C +85C -40C 32 Vdd=5V 30 IP3 (dBm) AMPLIFIERS - LOW NOISE - SMT 1.6 28 26 Vdd=3V 24 22 20 18 16 2.2 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) 2.9 3 Output IP3 and Idd vs. Supply Voltage @ 2500 MHz 36 76 34 70 34 70 32 64 32 64 30 58 30 58 28 52 28 52 26 46 26 46 24 40 24 40 22 34 22 34 20 28 20 28 18 22 18 22 16 2.7 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 16 5.5 IP3 (dB) 76 16 2.7 16 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 5.5 [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 36 Idd (mA) IP3 (dB) Output IP3 and Idd vs. Supply Voltage @ 2300 MHz 2.8 HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 20 15 10 5 0 Pout Gain PAE -5 -10 -25 -20 -15 -10 INPUT POWER (dBm) -5 Output Power, Gain & PAE @ 2500 MHz [1] 10 5 0 Pout (dBm), Gain (dB), PAE (%) 20 15 10 5 0 Pout Gain PAE -5 -10 -25 -20 -15 -10 INPUT POWER (dBm) -5 -5 -20 -15 -10 INPUT POWER (dBm) -5 0 20 15 10 5 0 1.2 24 22 1.1 22 NF 18 0.9 16 0.8 14 0.7 0.6 P1dB Gain 10 3.5 3.9 4.3 4.7 Voltage Supply (V) -15 -10 INPUT POWER (dBm) -5 0 5.1 1.1 NF 20 1 18 0.9 16 0.8 14 0.7 10 0.4 8 2.7 0.6 P1dB Gain 12 0.5 5.5 1.2 NOISE FIGURE (dB) 1 NOISE FIGURE (dB) 20 3.1 -20 P1dB, Gain, & Noise Figure vs. Supply Voltage @ 2500 MHz 24 12 Pout Gain PAE -5 -10 -25 0 P1dB, Gain, & Noise Figure vs. Supply Voltage @ 2300 MHz [1] Vdd = 5V Pout Gain PAE 25 Gain (dB) & P1dB (dBm) Pout (dBm), Gain (dB), PAE (%) 15 Output Power, Gain & PAE @ 2500 MHz [2] 25 Gain (dB) & P1dB (dBm) 20 -10 -25 0 AMPLIFIERS - LOW NOISE - SMT 25 Pout (dBm), Gain (dB), PAE (%) Pout (dBm), Gain (dB), PAE (%) 25 8 2.7 7 Output Power, Gain & PAE @ 2300 MHz [2] Output Power, Gain & PAE @ 2300 MHz [1] 0.5 0.4 3.1 3.5 3.9 4.3 4.7 Voltage Supply (V) 5.1 5.5 [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Gain & Return Loss w/ SDARS Tune [1] Noise Figure vs. Vdd w/ SDARS Tune [2] 1.6 20 1.4 10 NOISE FIGURE (dB) 15 RESPONSE (dB) AMPLIFIERS - LOW NOISE - SMT 25 S11 S22 S21 5 0 -5 -10 Vdd=5V Vdd=3V 1.2 1 0.8 0.6 -15 0.4 -20 -25 2.25 2.3 2.35 FREQUENCY (GHz) 2.4 2.45 0.2 2.25 2.3 2.35 2.4 2.45 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 Vdc RF Input Power (RFIN) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 5.88 mW/°C above 85 °C) 0.38 W Thermal Resistance (Channel to Ground Paddle) 170 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Vdd = 5V 7-5 [2] Measurement reference plane shown on evaluation PCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED AMPLIFIERS - LOW NOISE - SMT 7 Outline Drawing LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC667LP2 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC667LP2E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 667 XXX [2] 667 XXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 3-Digit lot number XXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz AMPLIFIERS - LOW NOISE - SMT 7 7-7 Pin Descriptions Pin Number Function Description 1, 2, 5 GND These pins and package bottom must be connected to RF/DC ground. 3 RFIN This pin is DC coupled See the application circuit for off-chip components 4 RFOUT This pin is AC coupled and matched to 50 Ohms. 6 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. Interface Schematic Components for Selected Band Components C1 L1 Broadband 2.7 pF 2.0 nH Evaluation PCB Number 121891 SDARS 2.2 pF 4.3 nH 122404 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB [1] Item J1 - J2 Description PCB Mount SMA Connector J3 - J4 DC Pin C1 2.7 pF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0402 Pkg. C3 10 nF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, CASE-A Tantalum L1 2 nH Inductor, 0402 Pkg. U1 HMC667LP2(E) Amplifier PCB [2] 117163 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table “Components for Selected Band” on previous page [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8