Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation • S0-8 Surface Mount Package with Improved Heatsinking Plastic S0-8 Package Pin Configuration Applications • Driver Amplifier for GSM Cellular Handsets • Driver or Output Stage for 900 MHz ISM Band Transmitters • Driver or Output Stage for Transmitters Operating in the 150-960 MHz Range GROUND AND THERMAL CONTACT 1 8 VCC1 2 7 GROUND 3 6 RFOUT AND VCC2 RFIN 4 5 POWER CONTROL GROUND AND THERMAL CONTACT Functional Block Diagram (2) VCC1 (1ST AND 2ND STAGES) (6) RFOUT AND VCC2 (3RD STAGE BIAS, OPEN COLLECTOR) (4) RFIN (1, 3, 7, 8) GROUND 5965-9661E (5) POWER CONTROL 6-76 Description Hewlett-Packard’s HPMX-3002 is a silicon microwave monolithic integrated circuit driver amplifier housed in a S0-8 surface mount plastic package. It operates over the 150 - 960 MHz frequency range, and at 900 MHz it produces +23 dBm of saturated output power, has 30 dB of small signal gain and a 50 dB power control range. The amplifier has a wellmatched input, and an open collector output which provides good linearity and efficiency and is easy to externally match to 50 Ω for optimal power output. This device is well suited as a driver amplifier for European GSM (Global System for Mobile communications) portable and mobile telephone systems, or as the output stage for other low cost applications such as 900 MHz ISM band spread-spectrum. The HPMX-3002 is fabricated with Hewlett-Packard’s 15 GHz ft ISOSAT-II process, which combines stepper lithography, ion implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability . HPMX-3002 Absolute Maximum Ratings Symbol Pdiss Pin Units Absolute Maximum[1] Power Dissipation[2,3] mW 1400 Input Power Parameter dBm +5 VCC[1] Supply Voltage V 8 VCC[2] Supply Voltage, 3rd Stage V 12 Vcont Control Voltage V 5 Tj Junction Temperature °C 150 TSTG Storage Temperatuere °C -65 to 150 Thermal Resistance[2]: Θjc = 66°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Tc = 25 °C (Tc is defined to be the temperature at the ends of pin 7 where it contacts the circuit board). 3. Derate at 15.2 mW/°C for TC > 58°C. HPMX-3002 Guaranteed Electrical Parameters, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V, PIN = - 6 dBm @ 900 MHz, output matched for maximum power ICC1 = 65 mA nom., ICC2 = 95 mA nom. set by Vcont (pin 5) = 2.2 V (unless otherwise noted). Symbol Parameters and Test Conditions Units Min. Typ. PIN = -6 dBm, f = 900 MHz dBm 22 23 40 50 Max. Pout Output Power PCR Power Control Range f = 900 MHz, Vcont = 0 to 2.2 V dBm ICC 1 Driver Stages Current VCC 1 = 4.5 V mA 65 75 ICC 2 Output Stage Current VCC 2 = 6 V mA 95 120 HPMX-3002 Summary Characterization Information, TC = 37°C, ZO = 50 Ω VCC1 = 4.5 V, VCC2 = 6 V, Pin = -6 dBm @ 900 MHz, output matched for maximum power ICC1 = 65 mA nom., ICC2 = 95 mA nom. set by Vcont (pin 5) = 2.2 V (unless otherwise noted). Symbol P1dB Parameters and Test Conditions Output Power at 1 dB Gain Compression PIN set for Pout = P 1 dB, f = 900 MHz Units Typ. dBm 22 Gss Small Signal Gain f = 900 MHz, Pin = -18 dBm dB 32 IP3 Third Order Intercept Point f1 = 900 MHz, f2 = 901 MHz Pout per tone = 12 dBm dBm 29 IP5 Fifth Order Intercept Point f1 = 900 MHz, f2 = 901 MHz Pout per tone = 12 dBm dBm 24 NF Noise Figure dB 9.5 - 1.5:1 mA 2.5 VSWR in Icont Input Voltage Standing Wave Ratio Control Current Vcont = 0 to 2.2V 6-77 HPMX-3002 Pin Description has an operating range of 4.5 to 6 V (5 V nominal). It should be bypassed close to RFIC body using a 1000 pF capacitor. Ground (pins 1,3,7,8): This RFIC is ground sensitive. A short path to ground with minimal parasitics must be provided on all ground leads to prevent stability problems. The PC board should be 0.032" or less in thickness. Multiple vias should be placed near the ground leads. Failure to properly ground this device can lead to positive return gain and possible stability problems. We suggest performing a stability analysis using the device s parameters and a description of the inductance of your ground path. A recommended board layout is shown on the final page of this data sheet. Pins 7 and 8 also provide the primary thermal path for heatsinking the device. RFin (pin 4): The impedance of this RFIC is well matched to 50 Ω from 100 MHz to 1100 MHz. Normally, no additional impedance matching is required. S-parameters are provided should the designer need to “fine tune” the input match. Pin 4 must be AC coupled to generator (1000 pF typ. blocking capacitor). The nominal drive level is -6 dBm, and under normal operating conditions should not exceed 0 dBm. Control (pin 5): Applying a DC voltage to this pin adjusts the gain of the last 2 stages of the RFIC over a 50 dB range. Pin 5 has an operational VCC1 (pin 2): This pin provides the DC bias for the amplifier driver stages, and 27 pF VCC2 (4 TO 8 V, 95 mA NOM.) 8 nH RFOUT (50 Ω) 1000 pF OUTPUT POWER CONTROL VOLTAGE (2.2 V, 2.5 mA TYP.) PIN: VCC1 (4 TO 6 V, 65 mA NOM.) 8 7 6 5 1 2 3 4 TRANSMISSION LINES ARE 50 Ω 1000 pF 1000 pF RFIN (50 Ω) Figure 1. HPMX-3002 Typical 900 MHz Amplifier Use. 6-78 range of 0 to 2.5 V. The power control function is designed for operation in the 800 - 1000 MHz frequency range, and decreases in adjustment capability at lower frequencies – refer to the performance graphs (figure 3). RFout and VCC2 (Pin 6): Pin 6 connects to the open collector of the output stage. A power match is required at this pin. The typical match for operation between 800 and 1000 MHz consists of a shunt L (8 nH typ.) and a series C (27 pF typ.), with the series C also serving as the blocking capacitor. The s parameter data should be used to generate matches for other frequency bands. HPMX-3002 Typical Performance, TC = 37°C, ZO = 50 Ω Pin = -6 dBm @ 900 MHz, VCC1 = 4.5 V, VCC2 = 6 V, Vcontrol = 2.2 V, ICC1 = 66 mA, ICC2 = 95 mA nom. Output matched for max. Pout @ 900 MHz (unless otherwise noted) 20 POUT 130 10 +85 ICC2 +37 90 19 -40 +85 17 200 400 0 -10 1.0 V -20 0.8 V 0.6 V 600 800 50 1000 0 200 400 600 800 100 0.5 0 7V 22 5.5 V 16 60 ICC1 40 +85 -40 20 21 0 -40 5.5 -20 4.5 V 12 ICC2 -40 -30 14 10 +37 -10 0 10 20 8 30 0 200 POUT (dBm) VCC1 (V) Figure 5. HPMX-3002 Output Power vs. Supply Voltage. 400 600 800 1000 FREQUENCY (MHz) Figure 6. HPMX-3002 Current vs. Output Power and Temperature. 24 40 0 2.5 2 18 +85 NOISE FIGURE (dB) 5V 5.3 1.5 5.0 V CURRENT (mA) 23 1 Figure 4. HPMX-3002 Output Power and Current vs. Control Voltage and Temperature. 80 6V POUT (dBm) -40 +37 8V 5.1 20 CONTROL VOLTAGE (V) VCC2 24 40 ICC1 -30 1000 Figure 3. HPMX-3002 Output Power vs. Frequency and Control Voltage. 25 4.9 +85 +37 60 -40 -10 FREQUENCY (MHz) Figure 2. HPMX-3002 Output Power and Current vs. Frequency and Temperature. 4.7 0 -20 -40 FREQUENCY (MHz) 20 4.5 ICC2 +85 100 +37 -40 80 +37 10 0.4 V 0.2 V -30 15 0 120 +85 70 +37 -40 ICC1 20 -40 POUT (dBm) 110 21 CURRENT (mA) POUT (dBm) -40 140 POUT POUT (dBm) +37 23 30 2.2 V 2.0 V 1.8 V 1.6 V 1.4 V 1.2 V +85 Figure 7. HPMX-3002 Noise Figure vs. Frequency and VCC1 . -30 -30 5.5 V IM3 S21 P1dB (dBm) GAIN (dB) +37 +85 +37 -40 30 22 +85 -40 +37 -50 +85 -60 IM5 -40 +37 -70 4.5 V -40 IM5 5.0 V 4.5 V 5.5 V -50 +85 P1dB 25 840 INTERMODULAITON (dBc) 23 INTERMODULAITON (dBc) -40 35 5.0 V IM3 -40 880 920 21 960 FREQUENCY (MHz) Figure 8. HPMX-3002 one dB Compressed Power and Small Signal Gain vs. Frequency and Temperature. -80 4 6 8 10 12 14 POUT PER TONE (dBm) Figure 9. HPMX-3002 Intermodulation Distortion vs. Output Power and Temperature with Vcontrol = 2.0 V. 6-79 -60 1.8 1.9 2 2.1 2.2 VCONTROL (V) Figure 10. HPMX-3002 Intermodulation Distortion vs. Control Voltage and VCC1 for Pout per tone = 12 dBm. CURRENT (mA) 30 150 25 0 0 150 10 120 20 30 ICC1 CURRENT (mA) RETURN LOSS (dB) RETURN LOSS (dB) 10 20 90 ICC2 60 30 40 30 40 50 0 200 600 400 800 0 1000 400 200 600 800 1000 FREQUENCY (MHz) FREQUENCY (MHz) VCC1 = 4.5 V VCC2 = 6 V 1000 pF PIN: 1 8 2 7 3 6 BIAS TEE PIN = -6 dBm ALL TRANSMISSION LINES ARE 50 Ω 4 RFOUT (50 Ω) 3 nH 1000 pF 5 VCONTROL = 2.2 V 1.8 pF 1000 pF Figure 14. HPMX-3002 Test Circuit Configuration. 6-80 0 200 400 600 800 1000 VCC2 (VOLTS) Figure 12. HPMX-3002 Output Return Loss vs. Frequency. Figure 11. HPMX-3002 Input Return Loss vs. Frequency. 0 Figure 13. HPMX-3002 Stage Current vs. Supply Voltage with VCC1 = 4.5 V. HPMX-3002 Typical Scattering Parameters, TC = 37°C, ZO = 50 Ω Vcontrol = 1.6 V VCC1 = 4.5 V, VCC2 = 6 V Freq GHz S11 dB S21 Mag dB S12 Mag Mag Ang Ang 0.10 0.33 0.20 0.34 151 42.89 139.44 92 44.16 161.44 0.30 0.31 51 42.95 0.40 0.31 18 0.50 0.29 0.60 S22 Ang Mag Ang -138 -60.00 0.001 143 0.91 -25 0.77 143 -53.98 0.002 152 0.75 -53 0.82 140.50 98 -53.98 0.002 146 0.65 -67 1.10 42.06 126.79 63 -47.96 0.004 148 0.65 -76 0.77 -14 41.91 124.61 29 -44.44 0.006 141 0.73 -89 0.65 0.23 -52 42.12 127.67 -10 -40.92 0.009 143 0.85 -107 0.62 0.70 0.09 -117 41.62 120.47 -60 -38.42 0.012 138 0.88 -136 0.73 0.80 0.06 66 38.19 81.23 -106 -37.08 0.014 135 0.65 -162 0.84 0.90 0.16 42 34.23 51.44 -144 -35.92 0.016 131 0.41 -179 0.94 1.00 0.19 11 29.87 31.15 -169 -33.98 0.020 130 0.31 -170 1.04 1.10 0.21 6 26.42 20.93 -165 -32.40 0.024 127 0.25 -164 1.14 HPMX-3002 Typical Scattering Parameters, TC = 37°C, ZO = 50 Ω k Vcontrol = 2.0 V VCC1 = 4.5 V, VCC2 = 6 V Freq GHz S11 dB S21 Mag dB S12 Mag Mag Ang Ang 0.10 0.33 0.20 0.31 143 45.90 197.18 83 45.15 180.94 0.30 0.28 43 43.46 0.40 0.27 11 0.50 0.25 0.60 Ang Mag Ang -158 -60.00 0.001 153 0.85 -31 0.85 128 -60.00 0.001 99 0.63 -56 1.78 148.88 88 -53.98 0.002 142 0.56 -65 1.26 42.43 132.22 55 47.96 0.004 138 0.60 -74 0.87 -21 42.15 128.14 22 -44.44 0.006 147 0.70 -88 0.67 0.19 -63 42.13 127.82 -17 -41.94 0.008 143 0.80 -108 0.61 0.70 0.05 -144 41.26 115.62 -64 -39.17 0.011 135 0.81 -138 0.73 0.80 0.09 61 37.86 78.15 -107 -37.72 0.013 135 0.59 -161 0.86 0.90 0.17 38 34.07 50.54 -144 -35.92 0.016 131 0.39 -178 0.95 1.00 0.19 12 29.89 31.23 -168 -33.98 0.020 132 0.30 -169 1.04 1.10 0.21 6 26.54 21.22 166 -32.40 0.024 127 0.24 -164 1.14 6-81 S22 k HPMX-3002 Typical Scattering Parameters, TC = 37°C, ZO = 50 Ω Vcontrol = 2.2 V VCC1 = 4.5 V, VCC2 = 6 V Freq GHz S11 dB S21 Mag dB S12 Mag Mag Ang Ang 0.10 0.26 0.20 0.18 122 46.64 214.70 67 43.80 154.92 0.30 0.15 30 41.76 0.40 0.12 -1 0.50 0.08 0.60 Ang Mag Ang 160 -60.00 0.001 111 0.58 -30 1.70 99 -60.00 0.001 133 0.49 -33 2.53 122.46 65 -53.98 0.002 139 0.52 -40 1.64 40.36 104.17 38 -50.46 0.003 149 0.59 -52 1.22 -30 39.64 95.89 6 -44.44 0.006 148 0.66 -68 0.79 0.02 -112 39.17 90.91 -29 -41.94 0.008 142 0.71 -89 0.70 0.70 0.13 92 38.03 79.70 -71 -40.00 0.010 137 0.65 -114 0.75 0.80 0.19 51 35.15 57.23 -109 -37.72 0.013 135 0.50 -131 0.88 0.90 0.23 34 32.04 39.99 -142 -35.92 0.016 134 0.34 -143 0.99 1.00 0.24 11 28.44 26.42 -168 -34.43 0.019 132 0.29 -139 1.11 1.10 0.24 4 25.49 18.82 166 -32.77 0.023 129 0.34 -137 1.15 Part Number Ordering Information Part Number Option No. of Devices Container HPMX-3002 - 100 Tube HPMX-3002 #T10 1000 Reel Package Dimensions 5.00 (0.197) 4.80 (0.188) S0-8 Package 8 7 6 5 4.00 (0.158) 3.80 (0.150) PIN: 1 2 3 6.20 (0.244) 5.80 (0.228) 4 0.20 (0.008) 0.10 (0.004) 0.45 (0.018) 0.35 (0.014) 1.27 (0.050) TYP 5.20 (0.205) 4.60 (0.181) 1.75 (0.069) 1.35 (0.053) 0 DEG MIN 8 DEG MAX 0.254 (0.010) 0.15 (0.007) NOTE: DIMENSIONS ARE IN MILLIMETERS (INCHES). 6-82 0.77 (0.030) 0.64 (0.025) S22 k HPMX-3002 Test Board Layout OUT OUT POWER CONTROL POWER CONTROL C VCC2 C L C IC HPMX-3002 1 VCC2 C C VCC1 HPMX-3002 1 H VCC1 IN Finished board size: 1.5" x 1.5" x 1/32" Material: 1/32" epoxy/fiberglass, 1 oz. copper, both sides, tin/lead coating, both sides. Note: “.” marks indicate drilling locations for plated-through via holes to the groundplane on the bottom side of the board. Board layed out for coil-craft #AO3T 8 nH spring-coil inductor. 6-83 H IN