1T379 Silicon Variable Capacitance Diode for Electronic Tuning of BS and CS Tuners Description The 1T379 is a variable capacitance diode designed for the electronic tuning of BS and CS tuners, and it has a super miniature package. Features • Super miniature package • Small series resistance 1.50 Ω Max. (f=470 MHz) • Large capacitance ratio 12.0 Typ. (C1/C25) • Small capacitance 0.60 pF Max. (VR=25 V) Structure Silicon epitaxial planar-type diode M-235 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Maximum reverse voltage VRM 35 V (RL≥10 kΩ) • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group (Ta=25 °C) Symbol IR VR C1 C25 C1/C25 rs ∆C Conditions Min. VR=25 V IR=1 µA VR=1 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz VR=5 V, f=470 MHz 30 6.0 0.5 10.0 VR=1 to 25 V, f=1 MHz Typ. Max. 10 7.2 0.6 Unit nA V pF pF 1.50 Ω 6 % 12.0 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E94205B82-TE Thermal coefficient of diode capacitance (ppm/°C) 1T379 Diode capacitance vs. Reverse voltage f=1MHz Ta=25°C C-Diode capacitance (pF) 10.0 1.0 0.1 1 10 Thermal coefficient of diode capacitance 1000 100 50 1 10 100 VR-Reverse voltage (V) 100 VR-Reverse voltage Forward voltage vs. Ambient temperature Diode capacitance vs. Ambient temperature f=1MHz 0.90 C (25°C) C (Ta) Diode capacitance VR=1V 1.02 VR=2V 1.01 VR=7V VR=15V VR=25V VF-Forward voltage (V) 1.03 IF=1mA 0.86 0.82 0.78 0.74 0.70 1.00 -20 0 20 40 Ta-Ambient temperature (°C) 0.99 0.98 -20 0 20 40 60 80 Ta-Ambient temperature (°C) —2— 60 80 1T379 Reverse voltage vs. Ambient temperature VR-Reverse voltage (V) 44 IR=10µA 42 40 38 36 34 -20 0 20 40 60 80 Ta-Ambient temperature (°C) Reverse current vs. Ambient temperature Reverse current vs. Reverse voltage VR=28V 100 100 Ta=80°C Ta=60°C 10 IR-Reverse current (pA) IR-Reverse current (pA) 10 1.0 Ta=25°C 1.0 0.1 0.1 -20 0 20 40 60 80 Ta-Ambient temperature (°C) 1 10 VR-Reverse voltage (V) —3— 100 1T379 Package Outline Unit : mm AA AA M-235 + 0.2 ∗1.25 – 0.1 ∗0.9 ± 0.1 + 0.1 0.3 – 0.05 0.2 2.5 ± 0.2 ∗1.7 ± 0.1 2 1 + 0.1 0.3 – 0.05 0 ± 0.05 + 0.1 0.11 – 0.06 0° to 10° NOTE: Dimension “∗” does not include mold protrusion. SONY CODE M-235 EIAJ CODE JEDEC CODE Marking PACKAGE WEIGHT CATHODE MARK 0.1g 2 79 B 1 —4— Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)