HUM2001/HUM2020 SERIES Pin Diode High Power Stud KEY FEATURES With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical bonds on both sides to achieve high reliability and high surge capability. High Power Stud Mount Package. High Zero Bias Impedance Very Low Inductance and Capacitance. No Internal Lead Straps. Small Mechanical Outline. WWW . Microsemi .C OM DESCRIPTION APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com VOLTAGE RATING [25°C] Reverse Voltage (VR) – Volts IR = 10µA Style “D” Insulated Stud Style “C” Stud Style “B” Round Axial Leads Style “SM” Melf Part type 100V HUM2001 500V HUM2005 1000V HUM2010 1500V HUM2015 2000V HUM2020 Maximum Ratings @ 25ºC (UNLESS OTHERWISE SPECIFIED) Parameter Copyright 2000 MSCXXXX.PDF 2002-08-08 HUM2001 HUM2005 HUM2010 TYPE HUM2015 HUM2020 Unit TRWM 100 500 1000 1500 2000 V IO 13 13 13 13 13 W I 100 100 100 100 100 A TSTG -65 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175 °C TSTG -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 °C RθJC 7.5 7.5 7.5 7.5 7.5 °C/W Microsemi HUM2010-2020 Maximum Reverse Voltage Average Power Dissipation @ Stud =50°C Non-Repetitive Sinusoidal Surge Current (8.3 ms) Storage Temperature Range Operating Temperature Range Thermal resistance Junction-to Case “C” Stud only Symbol Page 1 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY Diode Resistance Capacitance CT Reverse Current Carrier Lifetime Parallel Resistance Forward Voltage F= 4 MHz, If = 0.5 A F= 1 MHz, 100 V VR @ Rated Voltage If = 10 mA/ 100 V F= 10 MHz, 100 V If = 0.5 A RS CT IR τ RP Vf 0.10 3.4 10 200 Max Units 0.20 4.0 10 Ω pF µA µs kΩ V 30 0.85 1.0 WWW . Microsemi .C OM ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Symbol Conditions Min Typ. Parameter HUM2010, 15, 20 HUM2010, 15, 20 TYPICAL TYPICAL 101 16 Ct @ 1 MHz (pF) Rs @ 4 MHz (Ohms) 12 100 10-1 8 4 10-2 100 101 102 0 -1 10 103 10 0 10 1 10 2 Vr (V) If (mA) HUM2010, 15, 20 TYPICAL 10 HUM2010, 15, 20 1 TYPICAL 10 6 1 MHz 105 0 10 10 10 Rp (KOhms) If (A) 10 -1 -2 10 4 3 102 100 MHz ELECTRICALS 101 10 -3 0.3 0.5 0.7 0.9 1.1 1.3 1.5 10 Vf (V) 0 0 10 20 30 40 50 60 70 80 90 100 Vr (V) Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 2 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY STYLE “C” STUD WWW . Microsemi .C OM STYLE “D” INSULATED STUD PACKAGE DATA Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 3 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY STYLE “SM” MELF WWW . Microsemi .C OM STYLE “B” ROUND AXIAL LEADS PACKAGE DATA Note: Add Style Letter to Suffix of Part Number to Define Device Configuration, Example: (i.e. HUM2001 C) Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 4 HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY WWW . Microsemi .C OM NOTES Copyright 2000 MSCXXXX.PDF 2002-08-08 Microsemi Page 5