ETC HVM131S

ADE-208-379A(Z)
HVM131S
Silicon Epitaxial Planar Pin Diode
for Antenna Switching
Rev. 1
Oct. 1995
Features
Outline
• Low capacitance.(C=0.8pF max)
• Low forward resistance. (rf=1.0Ω max)
• MPAK package is suitable for high density
surface mounting and high speed assembly.
3
1
2
(Top View)
Ordering Information
Type No.
Laser Mark
Package Code
HVM131S
P5
MPAK
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM
65
V
Reverse voltage
VR
60
V
Forward current
IF*
100
mA
Power dissipation
Pd *
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
* Two device total
Electrical Characteristics (Ta = 25°C) *
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
1.0
V
IF = 10 mA
Reverse current
IR
—
—
0.1
µA
VR = 60 V
Capacitance
C
—
—
0.8
pF
VR = 1 V , f = 1 MHz
Forward resistance
rf
—
—
1.0
Ω
IF = 10 mA, f = 100 MHz
* Per one device
HVM131S
-2
10 -6
-4
10-7
10
10
Reverse current I R (A)
Forward current I F (A)
10
-6
10 -8
-8
10
10 -9
10-10
-10
10
10 -11
-12
10
0
0.2
0.4
0.6
0.8
1.0
10 -12
0
40
20
60
80
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
100
3
10
f=1MHz
f=100MHz
Forward resistance r f (Ω )
Capacitance C (pF)
10
1.0
-1
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs.
Reverse voltage
2
10
2
10
10
1.0
10
-1
-5
10
-4
10
-3
10
Forward current I F (A)
Fig.4 Forward resistance Vs.
Forward current
-2
10
HVM131S
Unit: mm
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Package Dimensions
+ 0.10
0.16 – 0.06
0.3
2.8 +– 0.1
+ 0.2
– 0.6
2.8
2 Anode1
3 Cathode1
Anode2
+ 0.2
1.9
1 Cathode2
1.1 – 0.1
1
0.95
0.1
0.65 +– 0.3
2
0.95
0 – 0.10
0.3
P5
1.5
3
HITACHI Code MPAK(1)
JEDEC Code
—
EIAJ Code
SC-59A
Weight (g)
0.011