ADE-208-379A(Z) HVM131S Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 1 Oct. 1995 Features Outline • Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly. 3 1 2 (Top View) Ordering Information Type No. Laser Mark Package Code HVM131S P5 MPAK 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 65 V Reverse voltage VR 60 V Forward current IF* 100 mA Power dissipation Pd * 150 mW Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C * Two device total Electrical Characteristics (Ta = 25°C) * Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 0.1 µA VR = 60 V Capacitance C — — 0.8 pF VR = 1 V , f = 1 MHz Forward resistance rf — — 1.0 Ω IF = 10 mA, f = 100 MHz * Per one device HVM131S -2 10 -6 -4 10-7 10 10 Reverse current I R (A) Forward current I F (A) 10 -6 10 -8 -8 10 10 -9 10-10 -10 10 10 -11 -12 10 0 0.2 0.4 0.6 0.8 1.0 10 -12 0 40 20 60 80 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 100 3 10 f=1MHz f=100MHz Forward resistance r f (Ω ) Capacitance C (pF) 10 1.0 -1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 2 10 2 10 10 1.0 10 -1 -5 10 -4 10 -3 10 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current -2 10 HVM131S Unit: mm 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Package Dimensions + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Anode1 3 Cathode1 Anode2 + 0.2 1.9 1 Cathode2 1.1 – 0.1 1 0.95 0.1 0.65 +– 0.3 2 0.95 0 – 0.10 0.3 P5 1.5 3 HITACHI Code MPAK(1) JEDEC Code — EIAJ Code SC-59A Weight (g) 0.011