HW HWL32NPA

HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Features
Outline Dimensions
•
Plastic Packaged GaAs Power FET
•
Suitable for Commercial Wireless
Applications
•
High Efficiency
•
3V Operation
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Description
2
1
3
The HWL32NPA is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications. It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+7V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
6 mA
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65 to +150°C
Power Dissipation
2.8 Watt
PT
*
PA Package (SOT-89)
* mounted on an infinite heat sink.
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
900
1100
1500
VP
Pinch-off Voltage at VDS=3V, ID=55mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=550mA
mS
400
550
-
Rth
Thermal Resistance
°C/W
-
30
35
P1dB
Power Output at Test Points
VDS=3V, ID=0.5IDSS
dBm
G1dB
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
dB
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
%
27.5
28.5
-
-
8.5
-
-
40.0
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°C
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V, IDS=0.5IDSS
Po (dBm)
40
PAE (%)
60
50
30
Po
40
Gain
Eff
30
20
Gain
20
10
10
0
0
0
5
10
15
20
Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V, IDS=0.5IDSS
Po (dBm)
40
PAE (%)
60
50
30
20
Gain
40
Po
Gain
30
Eff
20
10
10
0
0
0
5
10
15
20
25
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds= 3V, Ids= 550 mA
Po (dBm)
40
PAE (%)
80
30
60
20
40
Po
Gain
PAE
Gain
10
20
0
0
0.7
0.8
0.9
1.0
1.1
f (GHz)
Total Power Dissipation,PT (W)
Power Derating Curve
4
(25,2.8)
2
(150,0)
0
0
50
100
150
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=3V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.5
0.847
-128.306
4.442
111.231
0.028
48.401
0.766
176.247
0.6
0.844
-136.718
4.000
106.224
0.031
48.174
0.766
174.387
0.7
0.856
-143.154
3.522
100.835
0.032
47.325
0.770
172.215
0.8
0.856
-148.276
3.172
98.118
0.035
47.638
0.777
171.483
0.9
0.862
-152.368
2.872
94.301
0.037
47.811
0.772
169.310
1.0
0.862
-155.481
2.616
90.899
0.039
48.019
0.767
167.360
1.1
0.868
-158.908
2.412
88.220
0.042
48.290
0.777
165.642
1.2
0.868
-161.365
2.245
85.420
0.043
47.880
0.773
163.921
1.3
0.866
-163.564
2.088
83.210
0.046
48.040
0.768
163.205
1.4
0.872
-165.570
1.978
80.247
0.049
47.287
0.765
159.987
1.5
0.872
-167.487
1.863
78.438
0.052
47.738
0.775
159.792
1.6
0.871
-169.164
1.760
75.740
0.053
47.700
0.765
156.918
1.7
0.869
-171.012
1.678
73.872
0.056
47.632
0.766
156.303
1.8
0.874
-172.509
1.611
71.361
0.059
47.201
0.761
153.655
1.9
0.879
-173.858
1.536
69.077
0.062
46.497
0.773
151.523
2.0
0.879
-175.460
1.479
67.352
0.065
45.982
0.765
150.998
2.1
0.872
-176.624
1.414
64.792
0.067
45.512
0.763
147.956
2.2
0.865
-178.177
1.362
63.247
0.068
45.127
0.765
147.832
2.3
0.876
-179.226
1.321
61.095
0.072
44.685
0.764
145.725
2.4
0.873
179.431
1.290
59.408
0.075
44.208
0.756
145.341
2.5
0.874
178.752
1.246
57.332
0.078
43.382
0.756
142.567
2.6
0.869
177.380
1.213
55.693
0.081
43.133
0.748
142.490
2.7
0.862
176.088
1.186
53.633
0.084
42.183
0.747
140.086
2.8
0.861
175.077
1.160
51.576
0.088
40.816
0.745
138.293
2.9
0.862
173.963
1.134
49.861
0.092
40.051
0.738
137.355
3.0
0.852
172.530
1.121
47.820
0.095
39.070
0.731
136.238
3.1
0.850
171.050
1.092
45.231
0.099
37.071
0.734
133.062
3.2
0.844
169.222
1.069
43.334
0.103
36.394
0.736
133.546
3.3
0.834
168.241
1.064
41.513
0.108
34.173
0.720
131.820
3.4
0.832
166.589
1.037
39.114
0.110
31.864
0.723
129.938
3.5
0.828
165.210
1.021
37.141
0.110
30.261
0.719
129.069
3.6
0.821
163.173
1.002
35.435
0.111
29.245
0.727
127.882
3.7
0.820
161.436
1.002
33.449
0.116
28.819
0.713
126.743
3.8
0.808
159.505
0.988
31.697
0.119
28.357
0.714
125.311
3.9
0.803
157.624
0.987
29.197
0.124
26.807
0.704
122.809
4.0
0.797
155.678
0.982
27.141
0.128
25.641
0.693
121.255
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.