NEL HY62LF16804A

HY62LF16804A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM
Revision History
Revision No
History
04
Initial Revision History Insert
Revised
- Reliability Spec Deleted
Jul.02.2000
Preliminary
05
Change AC Characteristics
- tCLZ : 10/10/20 ---> 10/10/10
- tBLZ : 5/5/5
---> 10/10/10
Oct.23.2000
Preliminary
06
Part Number is changed
- HY62LF16803A --> HY62LF16804A
Nov.13.2000
07
Marking Instruction is inserted
Dec.5.2000
08
Test Condition Changed
- ILO / ISB / ISB1 / VDR / ICCDR
Marking Istruction Inserted
Dec.16.2000
09
Change Logo
- Hyundai à Hynix
Apr.28.2001
10
Change DC Parameter
- Isb1(LL) : 30uA à
- Isb1(Typ) : 8uA à
- Icc1(1us) : 5mA à
Change Data Retention
- IccDR(LL) : 25uA à
Change AC Parameter
- tOE
: 40ns à
Draft Date
Remark
Preliminary
Preliminary
Preliminary
Jan.28.2002
25uA
1uA
4mA
15uA
35ns@70ns
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.10/Jan. 2002
Hynix Semiconductor
HY62LF16804A Series
DESCRIPTION
FEATURES
The HY62LF16804A is a high speed, super low
power and 8Mbit full CMOS SRAM organized as
524,288 words by 16bits. The HY62LF16804A
uses high performance full CMOS process
technology and is designed for high speed and
low power circuit technology. It is particularly wellsuited for the high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 1.2V.
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup(LL/SL-part)
- 1.2V(min) data retention
• Standard pin configuration
- 48-uBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62LF16804A-C
2.3~2.7 70/85/100
HY62LF16804A- I
2.3~2.7 70/85/100
Note 1. C : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
PIN CONNECTION ( Top View )
IO10 IO11 A5
A6
IO2 IO3
Vss IO12 A17 A7
IO4 Vcc
A8
A14
A0
A3
A5
IO16 NC
A12 A13 /WE IO8
A18 A8
A9
A10 A11 NC
A11
BLOCK
DECODER
IO15 IO14 A14 A15 IO6 IO7
A13
ADD INPUT
BUFFER
Vcc IO13 Vss A16 IO5 Vss
A10
MEMORY ARRAY
512K x 16
I/O1
I/O8
DATA I/O
BUFFER
/CS IO1
WRITE DRIVER
A4
COLUMN
DECODER
IO9 /UB A3
SENSE AMP
NC
ROW
DECODER
PRE DECODER
A2
ADD INPUT
BUFFER
A1
A4,A6~A7
A9
A12
A15~A18
ADD INPUT
BUFFER
/OE A0
Temperature
(°C)
0~70
-45~85
BLOCK DIAGRAM
A1,A2
/LB
Standby Current(uA)
LL
SL
25
8
25
8
I/O9
I/O16
/CS
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Rev.10 /Jan. 2002
Pin Name
I/O1~I/O16
A0~A18
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(2.3V~2.7V)
Ground
No Connection
2
HY62LF16804A Series
ORDERING INFORMATION
Part No.
Speed
HY62LF16804A-DMC
70/85/100
HY62LF16804A-SMC
70/85/100
HY62LF16804A-DMI
70/85/100
HY62LF16804A-SMI
70/85/100
Note 1. C : Commercial, I : Industrial
Power
LL-part
SL-part
LL-part
SL-part
Package
uBGA
uBGA
uBGA
uBGA
Temp.
C
C
I
I
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VIN, VOUT
Vcc
Parameter
Input/Output Voltage
Power Supply
TA
Operating Temperature
TSTG
PD
TSOLDER
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.2 to 3.6
-0.2 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260 • 10
Unit
V
V
°C
°C
°C
W
°C • sec
Remark
HY62LF16804A-C
HY62LF16804A-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS
/WE
/OE
/LB
/UB
Mode
H
X
L
L
L
X
X
H
H
H
X
X
H
H
L
L
X
X
H
X
L
H
L
L
H
L
L
Deselected
Deselected
Output Disabled
Output Disabled
Read
L
X
H
L
X
L
H
L
L
H
L
Write
I/O1~I/O8
High-Z
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
I/O
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
Power
Standby
Standby
Active
Active
Active
Active
Note:
1. H=VIH, L=VIL, X=don't care(VIH or VIL)
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.
When UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
Rev.10 /Jan. 2002
2
HY62LF16804A Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.3
0
2.0
-0.3(1)
Typ.
2.5
0
-
Max.
2.7
0
Vcc+0.3
0.6
Unit
V
V
V
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.3V~2.7V, TA = 0°C to 70°C / -40°C to 85°C
Sym
Parameter
ILI
ILO
Input Leakage Current
Output Leakage Current
Icc
Operating Power Supply
Current
Icc1
ISB
Average Operating
Current
TTLStandbyCurrent
(TTL Input)
ISB1
VOL
VOH
Standby Current
(CMOS Input)
Output Low Voltage
Output High Voltage
Test Condition
-1
-1
Typ
.
-
-
-
3
mA
-
30
mA
-
-
4
mA
-
-
0.3
mA
-
-
8
uA
-
1
25
uA
2.0
-
0.4
-
V
V
Min.
Vss < VIN < Vcc
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL,
/UB = /LB = VIH
/CS = VIL, VIN = VIH or VIL, II/O = 0mA
Cycle Time=Min,100% duty,
II/O = 0mA, /CS = VIL,VIN = VIH or VIL
Cycle time = 1us, 100% duty,
II/O = 0mA, /CS < 0.2V, VIN<0.2V
/CS = VIH or /UB=/LB= VIH,
VIN = VIH or VIL
/CS > Vcc - 0.2V or
SL
/UB=/LB > Vcc-0.2V,
VIN > Vcc-0.2V or
LL
VIN < Vss+0.2V
IOL = 0.5mA
IOH = -0.5mA
Max.
Unit
1
1
uA
uA
Note :
1. Typical values are at Vcc = 2.5V, TA = 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(Add, /CS, /WE, /OE)
COUT
Output Capacitance(I/O)
Condition
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.10 /Jan. 2002
3
HY62LF16804A Series
AC CHARACTERISTICS
Vcc = 2.3V~2.7V, TA= 0°C to 70°C/ -40°C to 85°C, unless otherwise specified
-70
-85
#
Symbol Parameter
Min.
Max. Min.
Max.
READ CYCLE
1
tRC
Read Cycle Time
70
85
2
tAA
Address Access Time
70
85
3
tACS
Chip Select Access Time
70
85
4
tOE
Output Enable to Output Valid
35
45
5
tBA
/LB, /UB Access Time
70
85
6
tCLZ
Chip Select to Output in Low Z
10
10
7
tOLZ
Output Enable to Output in Low Z
5
5
8
tBLZ
/LB, /UB Enable to Output in Low Z
10
10
9
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
10 tOHZ
Out Disable to Output in High Z
0
30
0
30
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
12 tOH
Output Hold from Address Change
10
10
WRITE CYCLE
13 tWC
Write Cycle Time
70
85
14 tCW
Chip Selection to End of Write
60
70
15 tAW
Address Valid to End of Write
60
70
16 tBW
/LB, /UB Valid to End of Write
60
70
17 tAS
Address Set-up Time
0
0
18 tWP
Write Pulse Width
50
55
19 tWR
Write Recovery Time
0
0
20 tWHZ
Write to Output in High Z
0
25
0
30
21 tDW
Data to Write Time Overlap
30
35
22 tDH
Data Hold from Write Time
0
0
23 tOW
Output Active from End of Write
5
5
-
Min
-10
Max.
Unit
100
10
5
10
0
0
0
15
100
100
50
100
30
30
30
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100
80
80
80
0
75
0
0
45
0
10
35
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA= 0°C to 70°C(Commercial)/ -40°C to 85°C, unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Output Load
Other
Value
0.4V to 2.2V
5ns
1.1V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
V TM
= 2.3V
3067 Ohm
D
OUT
CL(1)
3345 Ohm
Note
1. Including jig and scope capacitance
Rev.10 /Jan. 2002
4
HY62LF16804A Series
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
tRC
ADDR
tAA
tOH
tACS
/CS
tCHZ(3)
tBA
/UB ,/ LB
Data
Out
tBHZ(3)
tOE
/OE
tOLZ(3)
tBLZ(3)
tCLZ(3)
High-Z
tOHZ(3)
Data Valid
READ CYCLE 2(Note 1,2,4)
tRC
ADDR
tAA
tOH
tOH
Data
Out
Previous Data
Data Valid
READ CYCLE 3(Note 1,2,4)
/CS
/UB, /LB
tACS
tCLZ(3)
Data
Out
tCHZ(3)
Data Valid
Notes:
1. Read occurs during the overlap of a low /OE, a high /WE, a low /CS1 and low /UB and /or /LB
2. /OE = VIL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
Rev.10 /Jan. 2002
5
HY62LF16804A Series
WRITE CYCLE 1 (1,4,8) (/WE Controlled)
tWC
ADDR
tWR(2)
tCW
/CS
tAW
tBW
/UB,/LB
tWP
/WE
tAS
Data In
tDW
High-Z
tDH
Data Valid
tWHZ(3,7)
tOW
(5)
(6)
Data
Out
WRITE CYCLE 2 (Note 1,4,8) (/CS Controlled)
tWC
ADDR
tCW
tAS
tWR(2)
/CS
tAW
tBW
/UB,/LB
tWP
/WE
tDW
Data In
Data
Out
Rev.10 /Jan. 2002
High-Z
tDH
Data Valid
High-Z
6
HY62LF16804A Series
Notes:
1. A write occurs during the overlap of a low / WE, a low /CS1 and low /UB and /or /LB
2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the
output must not be applied.
4. If the /CS, /LB and /UB low transition occur simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. Q(data out) is the same phase with the write data of this write cycle.
6. Q(data out) is the read data of the next address.
7. Transition is measured +200mV from steady state.
This parameter is sampled and not 100% tested.
8. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
DATA RETENTION ELECTRIC CHARACTERISTIC
TA= 0°C to 70°C(Commercial)/ -40°C to 85°C
Symbol
Parameter
Test Condition
/CS > Vcc - 0.2V or
/UB=/LB > Vcc-0.2V,
VDR
Vcc for Data Retention
VIN > Vcc-0.2V or
VIN < Vss+0.2V
Vcc=1.5V, /CS > Vcc - 0.2V or LL
/UB=/LB > Vcc-0.2V,
ICCDR
Data Retention Current
VIN > Vcc-0.2V or
SL
VIN < Vss+0.2V
Chip Deselect to Data
tCDR
Retention Time
See Data Retention Timing Diagram
tR
Operating Recovery Time
Min
Typ
Max
Unit
1.2
-
2.7
V
-
-
15
uA
-
-
8
uA
0
-
-
ns
tRC(2)
-
-
ns
Notes:
1. Typical values are under the condition of TA = 25°C .
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
DATA RETENTION MODE
VCC
2.3V
tCDR
tR
VIH
VDR
/CS or
/UB & /LB
/CS>Vcc-0.2V or
/UB=/LB > Vcc-0.2V
Vss
Rev.10 /Jan. 2002
7
HY62LF16804A Series
PACKAGE INFORMATION
48ball Micro Ball Grid Array Package(M)
BOTTOM VIEW
TOP VIEW
B
A
A1 CORNER
INDEX AREA
6
5
4
3
2
1
A
A
B
C
D
C
C1
E
3.0 X 5.0 MIN
FLAT AREA
F
G
C1/2
H
B1/2
B1
SIDE VIEW
5
E1
E2
C
E
SEATING PLANE
A
4
r
3 D(DIAMETER)
Symbol
A
B
B1
C
C1
D
E
E1
E2
r
Rev.10 /Jan. 2002
Min.
0.3
0.85
0.6
0.2
-
Typ.
0.75
3.75
7.4
5.25
8.5
0.35
0.9
0.65
0.25
-
Max.
0.4
0.95
0.7
0.3
0.08
Note
1. DIMENSIONING AND TOLERANCING PER ASME Y14. 5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION “D” IS MEASURED AT THE MAXIMUM SOLDE R
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
8
HY62LF16804A Series
MARKING INSTRUCTION
Package
uBGA
Marking Example
H
Y
L
F
c
s
s
t
x
x
x
x
6
8
0
4
A
y
w
w
p
K
O
R
x
Index
• HYLF6804A
: Part Name
• c
: Power Consumption
-D
-S
• ss
: Speed
- 55
- 70
- 85
• t
: Low Low Power
: Super Low Power
: Temperature
-C
-I
: 55ns
: 70ns
: 85ns
: Commercial ( 0 ~ 70 °C)
: Industrial ( -40 ~ 85 °C )
• y
: Year (ex : 0 = year 2000, 1= year2001)
• ww
: Work Week ( ex : 12 = work week 12)
• p
: Process Code
• xxxxx
: Lot No.
• KOR
: Origin Country
Note
- Capital Letter
- Small Letter
: Fixed Item
: Non-fixed Item
Rev.10 /Jan. 2002
9