HYNIX HY64UD16322A

HY64UD16322A Series
Document Title
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
Revision No. History
Draft Date
Remark
1.0
Initial
Jan. 03. ’03
Preliminary
1.1
Change process code
May. 13. ’03
-B
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Revision 1.1
May. 2003
1
HY64UD16322A Series
2M x 16 bit Low Low Power 1T/1C SRAM
DESCRIPTION
FEATURES
The HY64UD16322A is a 32Mbit 1T/1C SRAM
featured by high-speed operation and super low
power consumption. The HY64UD16322A adopts
one transistor memory cell and is organized as
2,097,152 words by 16bits. The HY64UD16322A
operates in the extended range of temperature and
supports a wide operating voltage range. The
HY64UD16322A also supports the deep power
down mode for a super low standby current. The
HY64UD16322A delivers the high-density low
power SRAM capability to the high-speed low power
system.
• CMOS Process Technology
• 2M x 16 bit Organization
• TTL compatible and Tri-state outputs
• Deep Power Down : Memory cell data hold invalid
• Standard pin configuration : 48-FBGA(6mmX8mm)
• Data mask function by /LB, /UB
• Separated I/O Power Supply : Vddq
PRODUCT FAMILY
Power Dissipation
Product No.
Voltage
[V]
Mode
HY64UD16322A-DF70E
HY64UD16322A-DF70I
2.7~3.3
2.7~3.3
1CS with /UB,/LB:tCS1
1CS with /UB,/LB:tCS1
(ISB1,Max) (IDPD,Max) (ICC2,Max)
100µA
2µA
25mA
100µA
2µA
25mA
Speed
tRC[ns]
Temp.
[°C]
70
70
-25~85
-40~85
Note 1. tCS - /UB,/LB=High : Chip Deselect.
PIN CONNECTION (Top View)
IO9
/OE
A0
A1
A2
A5
A6
IO2
IO3
Vss
A17
A7
IO4
Vdd
Vddq IO13 DNU
A16
IO5
Vss
IO15 IO14
A14
A15
IO6
IO7
IO16
A19
A12
A13
/WE
IO8
A18
A8
A9
A10
A11
A20
A20
/CS1
CS2
/WE
/OE
/LB
/UB
MEMORY ARRAY
2,048K x 16
IO1
IO8
DATA I/O
BUFFER
IO10 IO11
WRITE DRIVER
IO1
BLOCK
DECODER
/CS1
COLUMN
DECODER
A4
PRE DECODER
A3
A0
ADD INPUT
BUFFER
/UB
IO12
ROW
DECODER
CS2
SENSE AMP
/LB
BLOCK DIAGRAM
IO9
IO16
CONTROL
LOGIC
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/LB
/UB
DNU
Pin Function
Chip Select
Deep Power Down
Write Enable
Lower Byte(I/O1~I/O8)
Upper Byte(I/O9~I/O16)
Do Not Use
Pin Name
/OE
IO1~IO8
IO9~IO16
A0~A20
Vdd
Vddq
Vss
Pin Function
Output Enable
Lower Data Inputs/Outputs
Upper Data Inputs/Outputs
Address Inputs
Power Supply for Internal Circuit
Power Supply for I/O
Ground
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Revision 1.1
May. 2003
2
HY64UD16322A Series
ORDERING INFORMATION
Part Number
HY64UD16322A-E
HY64UD16322A-I
Speed
70
70
Power
LL-Part
LL-Part
Temperature
E1
I2
Package
FBGA
FBGA
Note
1. E : Extended Temp. (-25°C ~ 85°C)
2. I : Industrial Temp. (-40°C ~ 85°C)
ABSOLUTE MAXIMUM RATINGS 1
Symbol
VIN
VOUT
Vdd
Vddq
Parameter
Input Voltage
Output Voltage
Core Power Supply
I/O Power Supply
TA
Rating
-0.3 to Vdd+0.3
-0.3 to Vddq+0.3
Ambient Temperature
TSTG
PD
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
TSOLDER
-0.3 to 3.6
-0.3 to 3.6
-25 to 85
-40 to 85
-55 to 150
1.0
260•10
Unit
V
V
V
V
°C
°C
°C
W
°C•sec
Remark
HY64UD16322A-E
HY64UD16322A-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied. Exposure
to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2
H
X
X
L
L
L
L
L
L
L
L
L
H
L
H
H
H
H
H
H
H
H
H
H
/WE
/OE
/LB
/UB
Mode
X
X
X
L
H
H
L
H
H
L
H
H
X
X
X
X
L
H
X
L
H
X
L
H
X
X
H
L
L
L
H
H
H
L
L
L
X
X
H
H
H
H
L
L
L
L
L
L
Deselected
Deselected
Deselected
Write
Read
Output Disabled
Write
Read
Output Disabled
Write
Read
Output Disabled
I/O Pin
Power
I/O1~I/O8
I/O9~I/O16
High-Z
High-Z
Standby
High-Z
High-Z
Deep Power Down
High-Z
High-Z
Standby
DIN
High-Z
Active
DOUT
High-Z
Active
High-Z
High-Z
Active
High-Z
DIN
Active
High-Z
DOUT
Active
High-Z
High-Z
Active
DIN
DIN
Active
DOUT
DOUT
Active
High-Z
High-Z
Active
Note
1. H=VIH, L=VIL, X=don’t care(VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 - I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 - I/O16.
Revision 1.1
May. 2003
3
HY64UD16322A Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vdd
Vddq
VSS
VIH
VIL
Parameter
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
2.7
0
2.2
-0.21
Typ.
3.0
3.0
-
Max.
3.3
3.3
0
Vddq+0.3
0.6
Unit
V
V
V
V
V
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
Sym.
ILI
Parameter
Input Leakage Current
Test Condition
VSS≤VIN≤Vdd
Min.
-1
Max.
1
Unit
µA
-1
1
µA
ILO
Output Leakage Current
VSS≤VOUT≤Vddq,
/CS1=VIH, CS2=VIH,
/OE=VIH or /WE=VIL
ICC
Operating Power Supply Current
/CS1=VIL, CS2=VIH,
VIN=VIH or VIL, II/O=0mA
-
3
mA
-
5
mA
Average Operating Current
/CS1≤ 0.2V, CS2 ≥Vdd-0.2V,
VIN ≤0.2V or VIN≥Vdd-0.2V,
Cycle Time=1µs.
100% Duty, II/O=0mA
/CS1=VIL, CS2=VIH,
VIN=VIH or VIL, Cycle Time=Min.
100% Duty, II/O=0mA
-
25
mA
TTL Standby Current
/CS1,CS2=VIH or /UB,/LB= VIH
-
0.5
mA
ISB1
Standby Current(CMOS Input)
/CS1,CS2≥Vdd-0.2V,
/UB,/LB ≤0.2V or /UB,/LB ≥Vdd-0.2V,
otherwise CS2,/UB,/LB≥Vdd-0.2V,
/CS1≤0.2V or /CS1≥Vdd-0.2V
-
100
µA
IDPD
VOH
VOL
Deep Power Down
Output High Voltage
Output Low Voltage
CS2≤VSS+0.2V
IOH=-1.0mA
IOL=2.1mA
-
2
2.4
0.4
µA
V
V
ICC1
ICC2
ISB
-
CAPACITANCE
(Temp = 25°C, f=1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(ADD, /CS1, CS2, /WE, /OE, /UB, /LB)
COUT
Output Capacitance(I/O)
Condition
VIN=0V
VI/O=0V
Max. Unit
8
pF
10 pF
Note : These parameters are sampled and not 100% tested
Revision 1.1
May. 2003
4
HY64UD16322A Series
AC CHARACTERISTICS
Vdd=2.7V~3.3V, Vddq=2.7V~3.3V, TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
-70
#
Symbol
Parameter
Unit
Min. Max.
Read Cycle
Read Cycle Time
1
tRC
70
ns
Address Access Time
2
tAA
70
ns
Chip Select Access Time
3
tACS
70
ns
Output Enable to Output Valid
4
tOE
20
ns
/LB, /UB Access Time
5
tBA
70
ns
Chip Select to Output in Low Z
6
tCLZ
10
ns
Output Enable to Output in Low Z
7
tOLZ
5
ns
/LB, /UB Enable to Output in Low Z
8
tBLZ
10
ns
Chip Disable to Output in High Z
9
tCHZ
0
10
ns
Out Disable to Output in High Z
10
tOHZ
0
10
ns
/LB, /UB Disable to Output in High Z
11
tBHZ
0
10
ns
Output Hold from Address Change
12
tOH
5
ns
Write Cycle
Write Cycle Time
13
tWC
70
ns
Chip Selection to End of Write
14
tCW
60
ns
Address Valid to End of Write
15
tAW
60
ns
/LB, /UB Valid to End of Write
16
tBW
60
ns
Address Set-up Time
17
tAS
0
ns
Write Pulse Width
18
tWP
50
ns
Write Recovery Time
19
tWR
0
ns
Write to Output in High Z
20
tWHZ
0
20
ns
Data to Write Time Overlap
21
tDW
30
ns
Data Hold from Write Time
22
tDH
0
ns
Output Active from End of Write
23
tOW
5
ns
AC TEST CONDITIONS
TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rising and Fall Time
5ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
0.5*Vddq
Output Load
See Below
AC TEST LOADS
RL=50 Ohm
DOUT
VL=0.5*Vddq
Z0=50 Ohm
CL1 =50 pF
Note
1. Including jig and scope capacitance.
Revision 1.1
May. 2003
5
HY64UD16322A Series
Power-Up Sequence
1. Supply power with CS2 high.
2. Maintain stable power for longer than 200µs.
Deep Power Down Entry Sequence
1. Keep CS2 low state.
Deep power down mode is maintained while CS2 is low state.
Deep Power Down Exit Sequence
1. Keep CS2 high state.
2. Maintain stable power for longer than 200µs.
STATE DIAGRAM
/ CS1=VIL, CS2=VIH,
/UB&/LB≠VIH
Standby
Standby
Mode
Mode
CS2=VIH
Deep Power Down Exit
Sequence
Power-Up
Sequence
Power
Power On
On
Wait
µs
200
Wait 200µ
200µs
Active
Active
CS2=VIL
CS2=VIH, /CS1=VIH
or /UB,/LB=VIH
Deep
Deep Power
Power
Down
Down Mode
Mode
CS2=VIL
Deep Power Down
Entry Sequence
STANDBY MODE CHARACTERISTICS
Mode
Memory Cell Data
Standby Current[µA]
Wait Time[µs]
Standby
Valid
100 / 70ns
0
Deep Power Down
Invalid
2
200
Revision 1.1
May. 2003
6
HY64UD16322A Series
TIMING DIAGRAM
READ CYCLE 1 ( Note 1, 4 )
tRC
ADD
tOH
tAA
tACS
/CS1
tCHZ(3)
CS2
Vih
tBA
/UB, /LB
tBHZ(3)
tOE
/OE
tOHZ(3)
tOLZ(3)
tBLZ(3)
tCLZ(3)
Data Out
High-Z
Data Valid
READ CYCLE 2 ( Note 1, 2, 4 )( CS2=Vih )
tRC
ADD
tAA
tOH
tOH
Previous Data
Data Out
Data Valid
READ CYCLE 3 ( Note 1, 2, 4 )( CS2=Vih )
/CS1
/UB, /LB
tACS
tCHZ(3)
tCLZ(3)
Data Out
High-Z
Data Valid
Notes :
1. Read Cycle occurs whenever a high on the /WE and /OE is low, while /UB and/or /LB and /CS1 and CS2 are in active status.
2. /OE = VIL
3. tCHZ, tBHZ and tOHZ are defined as the time at which the outputs achieve the high impedance state and tOLZ,tBLZ and tCLZ
are defined as the time at which the outputs achieve the low impedance state.
These are not referenced to output voltage levels.
4. /CS1 in high for the standby, low for active.
/UB and /LB in high for the standby, low for active.
Revision 1.1
May. 2003
7
HY64UD16322A Series
WRITE CYCLE 1 ( Note 1, 4, 5, 9, 10 ) ( /WE Controlled )
tWC
ADD
tWR(2)
tCW
/CS1
CS2
Vih
tAW
tBW
/UB, /LB
tWP
tAS
/WE
tDW
Data In
High-Z
tDH
Data Valid
tWHZ(3,8)
tOW
(6)
(7)
Data Out
WRITE CYCLE 2 ( Note 1, 4, 5, 9, 10 ) ( /CS1 Controlled )
tWC
ADD
tAS
tWR(2)
tCW
/CS1
CS2
Vih
tAW
tBW
/UB, /LB
tWP
/WE
tDW
Data In
Data Out
High-Z
tDH
Data Valid
High-Z
Notes :
1. A write occurs during the overlap of low /CS1, low /WE and low /UB and/or /LB.
2. tWR is measured from the earlier of /CS1, /LB, /UB, or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be applied.
4. If the /CS1, /LB and /UB low transition occur simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. /OE is continuously low (/OE=VIL)
6. Q(data out) is the invalid data.
7. Q(data out) is the read data of the next address.
8. tWHZ is defined as the time at which the outputs achieve the high impedance state.
It is not referenced to output voltage levels.
9. /CS1 in high for the standby, low for active. /UB and /LB in high for the standby, low for active.
10. Do not input data to the I/O pins while they are in the output state.
Revision 1.1
May. 2003
8
HY64UD16322A Series
AVOID TIMING
Hynix 1T/1C SRAM has a timing which is not supported at read operation. If your system has multiple
invalid address signal shorter than tRC during over 10us at read operation which showed in abnormal
timing, Hynix 1T/1C SRAM needs a normal read timing at least during 10us which showed in avoidable
timing(1) or toggle the /CS1 to high(≥tRC) one time at least which showed in avoidable timing(2)
ABNORMAL TIMING
/CS1
≥ 10us
/WE
< tRC
ADD
AVOIDABLE TIMING(1)
/CS1
≥ 10us
/WE
≥ tRC
ADD
AVOIDABLE TIMING(2)
≥ tRC
/CS1
≥ 10us
/WE
< tRC
ADD
Revision 1.1
May. 2003
9
HY64UD16322A Series
PACKAGE DIMENSION
48ball Fine Pitch Ball Grid Array Package(F)
BOTTOM
BOTTOM VIEW
VIEW
TOP
TOP VIEW
VIEW
A1 CORNER
INDEX AREA
A1 INDEX
MARK
B1
B
A
A
A
B
C
C
D
C1
E
F
C/2
G
H
6
5
4
3
2
1
B/2
SIDE
SIDE VIEW
VIEW
5
E1
E
C
E2 SEATING PLANE
A
4
R
3 D(DIAMETER)
unit : mm
Symbol
Min.
Typ.
Max.
A
B
5.90
0.75
6.00
6.10
B1
C
7.90
3.75
8.00
8.10
C1
-
5.25
-
D
0.3
0.30
0.3
0.35
0.4
0.40
E
-
1.00
1.10
E1
-
0.75
-
E2
0.20
0.25
0.30
R
-
-
0.08
Revision 1.1
May. 2003
NOTE.
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION “D” IS MEASURED AT THE MAXIMUM SOLDER
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
10
HY64UD16322A Series
MARKING INFORMATION
Package
FBGA
Marking Example
H
Y
U
D
c
s
s
t
x
x
x
x
1
x
6
3
2
2
A
y
y
w
w
p
K
O
R
Index
• HYUD16322A
HY
U
D
16
32
2
A
: Part Name
: HYNIX
: Power Supply
: Tech. + Classification
: Bit Organization
: Density
: Mode
: Version
: Vdd=2.7V~3.3V/Vddq=2.7V~3.3V
: 1T+1C
: x16
: 32M
: 1CS with /UB,/LB;tCS
: 2nd Generation
• c
• ss
: Power Consumption
: Speed
: D – Low Low Power
: 70 – 70ns
• t
: Temperature
• yy
• ww
• p
: E – Extended(-25 ~ 85°C)
I – Industrial(-40 ~ 85°C)
: Year (ex : 02 = year 2002, 03= year 2003)
: Work Week ( ex : 12 = work week 12 )
: Process Code
:B
• xxxxx
: Lot No.
• KOR
: Origin Country
Note
- Capital Letter
- Small Letter
: Fixed Item
: Non-fixed Item
Revision 1.1
May. 2003
11