INFINEON HYB25L128160AC-75

HYB/E 25L128160AC
128-MBit Mobile-RAM
128-MBit Synchronous Low-Power DRAM in Chipsize Packages
Datasheet (Rev. 2003-02)
• Automatic and Controlled Precharge
Command
High Performance:
-7.5
-8
Units
fCK,MAX
133
125
MHz
tCK3,MIN
7.5
8
ns
tAC3,MAX
5.4
6
ns
tCK2,MIN
9.5
9.5
ns
tAC2,MAX
6
6
ns
• Programmable Burst Length: 1, 2, 4, 8 and
full page
• Programmable Power Reduction Feature by
partial array activation during Self-Refresh
• Data Mask for byte control
• Auto Refresh (CBR)
• 4096 Refresh Cycles / 64ms
• Self Refresh with programmble refresh period
• 8Mbit x 16 organisation
• VDD = 2.5V, VDDQ = 1.8V / 2.5V
• Power Down and Clock Suspend Mode
• Fully Synchronous to Positive Clock Edge
• Random Column Address every CLK
(1-N Rule)
• Four Banks controlled by BA0 & BA1
• 54-FBGA , with 9 x 6 ball array with 3
depopulated rows, 9 x 8 mm
• Programmable CAS Latency: 1, 2, 3
• Programmable Wrap Sequence: Sequential
or Interleave
• Operating Temperature Range
Commerical ( 00 to 700C)
Extended ( -25oC to +85oC)
• Deep Power Down Mode
The HYB/E 25L128160AC Mobile-RAMs are a new generation of low power, four bank
Synchronous DRAM’s organized as 4 banks × 2Mbit x16 with additional features for mobile
applications. These synchronous Mobile-RAMs achieve high speed data transfer rates by
employing a chip architecture that prefetches multiple bits and then synchronizes the output data to
a system clock. The chip is fabricated using the Infineon advanced process technology.
The device adds new features to the industry standards set for synchronous DRAM products.
Parts of the memory array can be selected for Self-Refresh and the refresh period during SelfRefresh is programmable in 4 steps which drastically reduces the self refresh current, depending on
the case temperature of the components in the system application. In addition a “Deep Power Down
Mode” is available. Operating the four memory banks in an interleave fashion allows random access
operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst
length, CAS latency and speed grade of the device. The device operates from a 2.5V power supply
for the core and 1.8V for the bus interface.
The Mobile-RAM is housed in a FBGA “chip-size” package. The Mobile-RAM is available in the
commercial (00 to 700C) and Extended ( -25oC to +85oC) temperature range.
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2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
Ordering Information
Type
Function Code Package
Description
Commercial temperature range:
HYB 25L128160AC-7.5
PC133-333-522 BGA-BOC
133 MHz 4B × 2M x16 LP-SDRAM
HYB 25L128160AC-8
PC100-222-620 BGA-BOC
100 MHz 4B × 2M x16 LP-SDRAM
Extended temperature range:
HYE 25L128160AC-7.5
PC133-333-522 BGA-BOC
133 MHz 4B × 2M x16 LP-SDRAM
HYE 25L128160AC-8
PC100-222-620 BGA-BOC
100 MHz 4B × 2M x16 LP-SDRAM
Pin Definitions and Functions
CLK
Clock Input
DQ
Data Input/Output
CKE
Clock Enable
LDQM, UDQM
Data Mask
CS
Chip Select
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
A0 - A11,
A0 - A8
Row Addresses
Column Addresses
BA0, BA1
Bank Select
INFINEON Technologies
9DD
9SS
9DDQ
9SSQ
N.C.
2
Power (+ 2.5V)
Ground
Power for DQ’s (+1.8 V)
Ground for DQ’s
Not connected
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
Pin Configuration for x16 devices:
1
2
3
7
8
9
VSS DQ15 VSSQ
A
VDDQ DQ0
VDD
DQ14 DQ13 VDDQ
B
VSSQ DQ2
DQ1
DQ12 DQ11 VSSQ
C
VDDQ DQ4
DQ3
DQ10 DQ9 VDDQ
D
VSSQ DQ6
DQ5
DQ8
NC
VSS
E
VDD LDQM DQ7
UDQM CLK
CKE
F
CAS
RAS
WE
NC
A11
A9
G
BA0
BA1
CS
A8
A7
A6
H
A0
A1
A10
VSS
A5
A4
J
A3
A2
VDD
< Top-view >
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HYB/E 25L128160AC
128-MBit Mobile-RAM
Functional Block Diagrams
A0 - A11,
BA0, BA1
Column Address
Counter
Column Address
Buffer
Row Address
Buffer
Row
Decoder
Row
Decoder
Bank 0
4096 x 512
x 16 Bit
Input Buffer
Memory
Array
Bank 1
4096 x 512
x 16 Bit
Output Buffer
Memory
Array
Bank 2
4096 x 512
x 16 Bit
Row
Decoder
Column Decoder
Sense amplifier & I(O) Bus
Memory
Array
Refresh Counter
Row
Decoder
Column Decoder
Sense amplifier & I(O) Bus
Column Decoder
Sense amplifier & I(O) Bus
Row Addresses
A0 - A8, AP,
BA0, BA1
Column Decoder
Sense amplifier & I(O) Bus
Column Addresses
Memory
Array
Bank 3
4096 x 512
x 16 Bit
Control Logic &
Timing Generator
CLK
CKE
CS
RAS
CAS
WE
DQMU
DQML
DQ0 - DQ15
SPB04124
Block Diagram: 8Mb x16 SDRAM (12 / 9 / 2 addressing)
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HYB/E 25L128160AC
128-MBit Mobile-RAM
Signal Pin Description
Pin
Type
Signal Polarity Function
CLK
Input
Pulse
Positive The system clock input. All of the SDRAM inputs are
Edge
sampled on the rising edge of the clock.
CKE
Input
Level
Active
High
Activates the CLK signal when high and deactivates the
CLK signal when low, thereby initiates either the Power
Down mode, Suspend mode, or the Self Refresh mode.
CS
Input
Pulse
Active
Low
CS enables the command decoder when low and disables
the command decoder when high. When the command
decoder is disabled, new commands are ignored but
previous operations continue.
RAS
CAS
WE
Input
Pulse
Active
Low
When sampled at the positive rising edge of the clock,
CAS, RAS, and WE define the command to be executed by
the SDRAM.
A0 - A11
Input
Level
–
During a Bank Activate command cycle, A0 - A11 define
the row address (RA0 - RA11) when sampled at the rising
clock edge.
During a Read or Write command cycle, A0-A8 define the
column address (CA0 - CA8) when sampled at the rising
clock edge.
In addition to the column address, A10 (= AP) is used to
invoke autoprecharge operation at the end of the burst read
or write cycle. If A10 is high, autoprecharge is selected and
BA0, BA1 defines the bank to be precharged. If A10 is low,
autoprecharge is disabled.
During a Precharge command cycle, A10 (= AP) is used in
conjunction with BA0 and BA1 to control which bank(s) to
precharge. If A10 is high, all four banks will be precharged
regardless of the state of BA0 and BA1. If A10 is low, then
BA0 and BA1 are used to define which bank to precharge.
BA0, BA1 Input
DQx
Level
–
Bank Select Inputs. Selects which bank is to be active.
Input Level
Output
–
Data Input/Output pins operate in the same manner as on
conventional DRAMs.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
Pin
Type
Signal Polarity Function
LDQM
UDQM,
Input
Pulse
VDD
VSS
VDDQ
VSSQ
Active
High
The Data Input/Output mask places the DQ buffers in a
high impedance state when sampled high. In Read mode,
DQM has a latency of two clock cycles and controls the
output buffers like an output enable. In Write mode, DQMx
has a latency of zero and operates as a word mask by
allowing input data to be written if it is low but blocks the
write operation if DQM is high.
LDQM and UDQM controls the lower and upper bytes in
x16 SDRAM.
Supply –
–
Power and ground for the input buffers and the core logic.
Supply –
–
Isolated power supply and ground for the output buffers to
provide improved noise immunity.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQMx at
the positive edge of the clock. The following list shows the truth table for the operation commands.
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Bank Active
Device
State
Idle3
CKE
n-1
CKE
n
DQM
BA0
BA1
AP=
A10
Addr
CS
RAS
CAS
WE
H
X
X
V
V
V
L
L
H
H
Bank Precharge
Any
H
X
X
V
L
X
L
L
H
L
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
Write
Active3
H
X
X
V
L
V
L
H
L
L
Write with Autoprecharge
Active3
H
X
X
V
H
V
L
H
L
L
Read
Active3
H
X
X
V
L
V
L
H
L
H
Read with Autoprecharge
Active3
H
X
X
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
V
V
V
L
L
L
L
No Operation
Any
H
X
X
X
X
X
L
H
H
H
Burst Stop
Active
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
Auto Refresh
Idle
H
H
X
X
X
X
L
L
L
H
Self Refresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
Self Refresh Exit
Idle
(Self
Refr.)
H
X
X
X
L
H
H
X
H
X
X
X
L
H
H
H
Power Down Entry
(Precharge or active
standby)
L
H
X
X
X
X
H
L
X
X
X
X
Idle
Active4
Power Down Exit
Data Write/Output Enable
Any
(Power
Down)
L
H
X
X
X
X
H
X
X
X
L
H
H
L
Active
H
X
L
X
X
X
X
X
X
X
Data Write/Output Disable Active
H
X
H
X
X
X
X
X
X
X
Deep Power Down Entry
Idle
H
L
X
X
X
X
L
H
H
L
Deep Power Down Exit
Deep5
Power
Down
L
H
X
X
X
X
X
X
X
X
Notes:
1. V = Valid, x = Don’t Care, L = Low Level, H = High Level.
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock before the
commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Power Down Mode can not entry in the burst cycle. Address Input for Mode Set (Mode Register Operation)
5. After Deep Power Down mode exit a full new initialisation of the memory device is mandatory.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
BA1 BA0 A11 A10 A9
0*)
0*)
A8
A7
Operation Mode
A6
A5
A4
A3
A2
CAS Latency
BT
Burst Length
Operation Mode
A1
A0 Address Bus (Ax)
Mode Register (Mx)
Burst Type
BA1 BA0 M11 M10 M9
Mode
M3
Type
0
0
0
0
0
M8 M7
0
0
Burst Read/
Burst Write
0
Sequential
1
Interleave
0
0
0
0
1
0
0
Burst Read/
Single Write
CAS Latency
Burst Length
M6
M5
M4
Latency
0
0
0
Reserved
0
0
1
1
0
0
0
1
0
2
0
0
1
1
3
1
0
0
Reserved
1
0
1
1
1
0
1
1
1
M2
Reserved
M1
Length
M0
Sequential
Interleave
0
1
1
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
1
0
1
1
1
0
1
1
1
Reserved
Reserved
full page
*) BA0 and BA1 must be 0, 0 to select the Mode Register (Vs. the Extended Mode
Register)
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HYB/E 25L128160AC
128-MBit Mobile-RAM
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The default power on state of the mode register is supplier specific and may be undefined. The
following power on and initialization sequence guarantees the device is preconditioned to each
users specific needs. Like a conventional DRAM, the Synchronous DRAM must be powered up and
initialized in a predefined manner. 9DD must be applied before or at the same time as 9DDQ to the
specified voltage when the input signals are held in the “NOP” or “DESELECT” state. The power on
voltage must not exceed 9DD + 0.3 V on any of the input pins or VDD supplies. The CLK signal must
be started at the same time. After power on, an initial pause of 200 µs is required followed by a
precharge of all banks using the precharge command. To prevent data contention on the DQ bus
during power on, it is required that the DQM and CKE pins be held high during the initial pause
period. Once all banks have been precharged, the Mode Register Set Command must be issued to
initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also required.These
may be done before or after programming the Mode Register. Failure to follow these steps may lead
to unpredictable start-up modes.
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The Mode Register designates the operation mode at the read or write cycle. This register is divided
into 4 fields. A Burst Length Field to set the length of the burst, an Addressing Selection bit to
program the column access sequence in a burst cycle (interleaved or sequential), a CAS Latency
Field to set the access time at clock cycle and a Operation mode field to differentiate between
normal operation (Burst read and burst write) and a special Burst Read and Single Write mode. The
mode set operation must be done before any activate command after the initial power up. Any
content of the mode register can be altered by re-executing the mode set command. All banks must
be in precharged state and CKE must be high at least one clock before the mode set operation. After
the mode register is set, a Standby or NOP command is required. Low signals of RAS, CAS, and
WE at the positive edge of the clock activate the mode set operation. Address input data at this
timing defines parameters to be set as shown in the previous table. BA0 and BA1 have to be set to
“0” to enter the Mode Register.
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The Extended Mode Register controls functions beyond those controlled by the Mode Register.
These additional functions are unique to Mobile RAMs and includes a Refresh Period field (TCR) for
temperature compensated self-refresh and a Partial-Array Self Refresh field (PASR). The PASR
field is used to specify whether only one quarter (bank 0), one half (banks 0 + 1) or all banks of the
SDRAM array are enabled. Disabled banks will not be refreshed in Self-Refresh mode and written
data will get lost. When only bank 0 is selected, it is possible to partially select only half or one
quarter of bank 0. The TCR field has four entries to set Refresh Period during self-refresh
depending on the case temperature of the Mobile RAM devices.
The Extended Mode Register is programmed via the Mode Register Set command (with BA0 = 0
and BA1 = 1) and retains the stored information until it is programmed again or the device loses
power. The Extended mode Register must be loaded when all banks are idle, and the controller
must wait the specified time before initiating any subsequent operation. Violating either these
requirements result in unspecified operation. Unused bit A5 to A11 have to be programmed to “0”.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
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BA1 BA0 A11 A10
1*)
A9
A8
A7
A6
A5
A4
all have to be set to "0"
0*)
A3
TCR
A2
A1
A0
Address Bus (Ax)
Mode Register (Mx)
PASR
Temperature-Compensated
Self-Refresh:
max.
case temp.
70 0C
M4
M3
0
0
0
1
1
0
15 C
1
1
85 C
Partial-Array Self Refresh:
M2
M1
M0
45 0C
0
0
0
0
0
0
1
0
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
banks to be
self-refreshed
all banks
1/2 array (BA1=0)
1/4 array (BA1=0, BA0=0)
Reserved
Reserved
1/8 array (BA1=BA0=0, RA11=0)
1/16 array (BA1=BA0=0,
RA11=RA10=0)
Reserved
*)BA1 and BA0 must be 1, 0 to select the Extended Mode Register (Vs. the Mode Register)
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When RAS is low and both CAS and WE are high at the positive edge of the clock, a RAS cycle
starts. According to address data, a word line of the selected bank is activated and all of sense
amplifiers associated to the wordline are set. A CAS cycle is triggered by setting RAS high and CAS
low at a clock timing after a necessary delay, WRCD, from the RAS timing. WE is used to define either
a read (WE = H) or a write (WE = L) at this stage.
SDRAM provides a wide variety of fast access modes. In a single CAS cycle, serial data read or
write operations are allowed at up to a 133 MHz data rate. The numbers of serial data bits are the
burst length programmed at the mode set operation, i.e., one of 1, 2, 4, 8 and full page. Column
addresses are segmented by the burst length and serial data accesses are done within this
boundary. The first column address to be accessed is supplied at the CAS timing and the
subsequent addresses are generated automatically by the programmed burst length and its
sequence. For example, in a burst length of 8 with interleave sequence, if the first address is ‘2’,
then the rest of the burst sequence is 3, 0, 1, 6, 7, 4, and 5.
Full page burst operation is only possible using the sequential burst type and page length is a
function of the I/O organisation and column addressing. Full page burst operation does not self
terminate once the burst length has been reached. In other words, unlike burst length of 2, 4 and 8,
full page burst continues until it is terminated using another command.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column
address are possible once the RAS cycle latches the sense amplifiers. The maximum WRAS or the
refresh interval time limits the number of random column accesses. A new burst access can be
done even before the previous burst ends. The interrupt operation at every clock cycle is supported.
When the previous burst is interrupted, the remaining addresses are overridden by the new address
with the full burst length. An interrupt which accompanies an operation change from a read to a write
is possible by exploiting DQM to avoid bus contention.
When two or more banks are activated sequentially, interleaved bank read or write operations are
possible. With the programmed burst length, alternate access and precharge operations on two or
more banks can realize fast serial data access modes among many different pages. Once two or
more banks are activated, column to column interleave operation can be performed between
different pages. When the partial array activation is set, data will get lost when self-refresh is used
in all non activated banks.
Burst Length and Sequence
Burst
Length
Starting
Address
(A2 A1 A0)
Sequential Burst
Addressing
(decimal)
Interleave Burst
Addressing
(decimal)
2
xx0
xx1
0, 1
1, 0
0, 1
1, 0
4
x00
x01
x10
x11
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
8
000
001
010
011
100
101
110
111
Full Page
nnn
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
2
3
4
5
6
7
0
1
3
4
5
6
7
0
1
2
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
6
7
0
1
2
3
4
5
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
Cn, Cn+1, Cn+2
1
0
3
2
5
4
7
6
2
3
0
1
6
7
4
5
3
2
1
0
7
6
5
4
4
5
6
7
0
1
2
3
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
not supported
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Mobile-RAM has two refresh modes, Auto Refresh and Self Refresh.
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Auto Refresh is similar to the CAS -before-RAS refresh of earlier DRAMs. All banks must be
precharged before applying any refresh mode. An on-chip address counter increments the word
and the bank addresses. No bank information is required for both refresh modes.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
The chip enters the Auto Refresh mode, when RAS and CAS are held low and CKE and WE are
held high at a clock edge. The mode restores word line after the refresh and no external precharge
command is necessary. A minimum WRC time is required between two automatic refreshes in a burst
refresh mode. The same rule applies to any access command after the automatic refresh operation.
In Auto-Refresh mode all banks are refreshed, independendly of the fact that the partial array selfrefresh has been set or not.
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The chip has an on-chip timer that is used when the Self Refresh mode is entered. The self-refresh
command is asserted with RAS, CAS, and CKE low and WE high at a clock edge. All external
control signals including the clock are disabled. Returning CKE to high enables the clock and
initiates the refresh exit operation. After the exit command, at least one WRC delay is required prior to
any access command. Low Power SDRAMs have the possibility to program the refresh period of the
on-chip timer with the use of an appropriate extended MRS command, depending on the maximum
operation case temperature in the application. In partial array self-refresh mode only the selected
banks will be refreshed. Data written to the non activated banks will get lost after a period defined
by tref.
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DQMx has two functions for data I/O read and write operations. During reads, when it turns to “high”
at a clock edge, data outputs are disabled and become high impedance after two clock periods
(DQM Data Disable Latency WDQZ). It also provides a data mask function for writes. When DQM is
activated, the write operation at the next clock is prohibited (DQM Write Mask Latency WDQW = zero
clocks).
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During normal access, CKE is held high enabling the clock. When CKE is low, it freezes the internal
clock and extends data read and write operations. One clock delay is required for mode entry and
exit (Clock Suspend Latency tCSL).
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In order to reduce standby power consumption, a power down mode is available. All banks must be
precharged before the Mobile-RAM can enter the Power Down mode. Once the Power Down mode
is initiated by holding CKE low, all receiver circuits except for CLK and CKE are gated off. The
Power Down mode does not perform any refresh operations, therefore the device can’t remain in
Power Down mode longer than the Refresh period (WREF) of the device. Exit from this mode is
performed by taking CKE “high”. One clock delay is required for power down mode entry and exit.
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The Deep Power Down Mode is an unique function on Mobile RAMs with very low standby currents.
All internal voltage generators inside the Mobile RAMs are stopped and all memory data is lost in
this mode. To enter the Deep Power Down mode all banks must be precharged.
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HYB/E 25L128160AC
128-MBit Mobile-RAM
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Two methods are available to precharge Mobile-RAMs. In an automatic precharge mode, the CAS
timing accepts one extra address, CA10, to determine whether the chip restores or not after the
operation. If CA10 is high when a Read Command is issued, the Read with Auto-Precharge function
is initiated. If CA10 is high when a Write Command is issued, the Write with Auto-Precharge function
is initiated. The Mobile-RAM automatically enters the precharge operation after WWR (Write recovery
time) following the last data in.
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There is also a separate precharge command available. When RAS and WE are low and CAS is
high at a clock edge, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are
used to define banks as shown in the following list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2 and two clocks before the last data out for CAS
latency = 3. Writes require a time delay WWR from the last data out to apply the precharge command.
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A10
BA0
BA1
0
0
0
Bank 0
0
0
1
Bank 1
0
1
0
Bank 2
0
1
1
Bank 3
1
x
x
all Banks
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Once a burst read or write operation has been initiated, there are several methods used to terminate
the burst operation prematurely. These methods include using another Read or Write Command to
interrupt an existing burst operation, using a Precharge Command to interrupt a burst cycle and
close the active bank, or using the Burst Stop Command to terminate the existing burst operation
but leave the bank open for future Read or Write Commands to the same page of the active bank.
When interrupting a burst with another Read or Write Command care must be taken to avoid DQ
contention. The Burst Stop Command, however, has the fewest restrictions making it the easiest
method to use when terminating a burst operation before it has been completed. If a Burst Stop
command is issued during a burst write operation, then any residual data from the burst write cycle
will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is registered
will be written to the memory.
INFINEON Technologies
13
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
(OHFWULFDO&KDUDFWHULVWLFV
$EVROXWH0D[LPXP5DWLQJV
Operating Case Temperature Range (commercial).........................................................0 to + 70°C
Operating Case Temperature Range (extended) ........................................................ -25 to + 85°C
Storage Temperature Range ................................................................................... – 55 to + 150°C
Input/Output Voltage ......................................................................................... – 0.3 to 9DD + 0.3 V
Power Supply Voltage 9DD ...................................................................................... – 0.3 to + 3.6 V
Power Dissipation .................................................................................................................... 0.7 W
Data out Current (short circuit) ............................................................................................... 50 mA
1RWH
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Recommended Operation and DC Characteristics
TCASE = 0 to 70°C (commercial) / -25 to 85oC (Extended);
VSS = 0 V; VDD = 2.5 V nominal, VDDQ = 1.8V / 2.5V nominal
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
DRAM Core Supply Voltage
VDD
2.3
2.9
V
I/O Supply Voltage
VDDQ
1.65
2.9
V
Input High Voltage (CMD, Addr.)
VIH
0.8 x VDDQ
VDDQ + 0.3
V
1, 2
Input Low Voltage (CMD, Addr.)
VIL
– 0.3
+ 0.3
V
1, 2
Data Input High (Logic 1) Voltage
VIH
0.8 x VDDQ
VDDQ + 0.3
V
Data Input Low (Logic 0) Voltage
VIL
– 0.3
+ 0.3
V
Data Output High (Logic 1) Voltage
(IOH=-0.1mA)
VOH
VDDQ - 0.2
–
V
Date Output Low (Logic 0) Voltage
(IOL=+0.1mA)
VOL
–
0.2
V
Input Leakage Current, any input
(0 V < VIN < VDDQ, all other inputs = 0 V)
II(L)
–5
5
µA
Output Leakage Current
(DQ is disabled, 0 V < VOUT < VDD)
IO(L)
–5
5
µA
1RWHV
1. All voltages are referenced to 9SS.
2. 9IH may overshoot to 9DD + 0.8V for pulse width of < 4 ns with 2.5V.9IL may undershoot to
– 0.8 V for pulse width < 4.0 ns with 2.5V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
INFINEON Technologies
14
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
Capacitance :
TCASE = 0 to 70 °C (commercial) / -25 to 85oC (Extended);
VDD = 2.5 V nominal,VDDQ = 1.8 V nominal, f = 1 MHz
Parameter
Symbol
Values
min.
max.
Unit
Input Capacitance (CLK)
CI1
-
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
CI2
-
3.8
pF
Input/Output Capacitance (DQ)
CIO
-
6.0
pF
Operating Currents
TCASE = 0 to 70 °C (commercial) / -25 to 85oC (Extended);
VDD = 2.5 V nominal, VDDQ = 1.8 V nominal
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Operating current
Symb. -7.5
-8
Unit
70
65
mA
3,4
ICC1
–
tCK = tCK(MIN.)
Note
one bank access
Precharge standby current
in Power Down Mode
CS = VIH (MIN.), CKE ≤ VIL(MAX.)
tCK = min
ICC2P
0.4
0.4
mA
3
Precharge standby current
in Non Power Down Mode
CS = VIH (MIN.), CKE ≥ VIH(MIN.)
tCK = min
ICC2N
20
15
mA
3
No operating current
tCK = min., CS = VIH (MIN.),
active state (max. 4 banks)
CKE ≥ VIH(MIN.)
ICC3N
35
31
mA
3
3
3
mA
3
70
60
mA
3,4
160
150
CKE ≤ VIL(MAX.) ICC3P
Burst Operating Current
tCK = min
Read command cycling
–
Auto Refresh Current
tCK = min, trc = trcmin.
Auto Refresh command cycling
–
ICC4
ICC5
ICC7
Deep Power Down Mode Current
INFINEON Technologies
15
3
mA
µA
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
3URJUDPPDEOH6HOI5HIUHVK&XUUHQWV
Parameter & Test Condition
Extended Mode
Register M[4:3]
Tcase [oC]
Symb. max.
Unit
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
full array activations, all banks
85oC max.
ICC6
520
µA
70oC max.
350
µA
45oC max.
250
µA
210
µA
380
µA
250
µA
45 C max.
180
µA
15oC max.
160
µA
o
15 C max.
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
half array activations, Bank 0 +1
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity,
quarter array activation, Bank 0
85oC max.
ICC6
70oC max.
o
270
µA
70oC max.
180
µA
45oC max.
130
µA
120
µA
o
ICC6
85 C max.
o
15 C max.
Note
1RWHV
3. These parameters depend on the frequency. These values are measured at 133 MHz for -7 &
-7.5 and at 100 MHz for -8 parts. Input signals are changed once during WCK. If the devices are
operating at a frequency less than the maximum operation frequency, these current values are
multiplied by 1/ freq, meaning operation at half the maximum frequency reduces these current
value by a factor of 2.
4. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the 9DDQ current is excluded.
INFINEON Technologies
16
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
AC Characteristics 1, 2
TCASE = 0 to 70 °C (commercial) / -25 to 85oC (Extended);
VSS = 0 V; VDD = 2.5 V nominal, VDDQ = 1.8 V nominal, tT = 1 ns
Parameter
Symb.
Unit
-7.5
Note
-8
min.
max.
min.
max.
Clock Cycle Time
CAS Latency = 3 tCK
CAS Latency = 2
CAS Latency = 1
7.5
9.5
20
–
–
–
8
9.5
20
–
–
–
ns
ns
ns
Clock frequency
CAS Latency = 3 tCK
CAS Latency = 2
CAS Latency = 1
–
–
–
133
105
50
–
–
–
125
105
50
MHz
MHz
Mhz
Access Time from Clock
CAS Latency = 3 tAC
CAS Latency = 2
CAS Latency = 1
–
–
–
5.4
6
19
–
–
–
6
6
19
ns
ns
ns
–
3
–
ns
Clock and Clock Enable
2, 3, 6
Clock High Pulse Width
tCH
2.5
Clock Low Pulse Width
tCL
2.5
–
3
–
ns
Transition Time
tT
0.3
1.2
0.5
1.5
ns
Input Setup Time
tIS
1.5
–
2
–
ns
4
Input Hold Time
tIH
0.8
–
1
–
ns
4
CKE Setup Time
tCKS
1.5
–
2
–
ns
4
CKE Hold Time
tCKH
0.8
–
1
–
ns
4
Mode Register Set-up Time
tRSC
2
–
2
–
CLK
Power Down Mode Entry
Time
tSB
0
7.5
0
8
ns
Row to Column Delay Time
tRCD
19
–
19
–
ns
5
Row Precharge Time
tRP
19
–
19
–
ns
5
Row Active Time
tRAS
45
100k
48
100k
ns
5
Row Cycle Time
tRC
67
–
70
–
ns
5
Setup and Hold Times
Common Parameters
INFINEON Technologies
17
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
AC Characteristics (cont’d)1, 2
TCASE = 0 to 70 °C (commercial) / -25 to 85oC (Extended);
VSS = 0 V; VDD = 2.5 V nominal, VDDQ = 1.8 V nominal, tT = 1 ns
Parameter
Symb.
-7.5
Activate(a) to Activate(b)
Command Period
tRRD
CAS(a) to CAS(b) Command tCCD
Period
Unit
Note
-8
min.
max.
min.
max.
15
–
16
–
ns
5
1
–
1
–
CLK
–
–
Refresh Cycle
Refresh Period
(4096 cycles)
tREF
–
64
–
64
ms
Self Refresh Exit Time
tSREX
1
–
1
–
CLK
Data Out Hold Time
tOH
3
–
3
–
ns
2, 5, 6
Data Out to Low Impedance
Time
tLZ
1
–
0
–
ns
–
Data Out to High Impedance
Time
tHZ
3
7
3
8
ns
–
DQM Data Out Disable
Latency
tDQZ
–
2
–
2
CLK
–
Write Recovery Time
tWR
14
–
14
–
ns
DQM Write Mask Latency
tDQW
0
–
0
–
CLK
Read Cycle
Write Cycle
INFINEON Technologies
18
7
–
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
1RWHV
1. For proper power-up see the operation section of this data sheet.
2. AC timing tests are referenced to the 0.9 V crossover point for VDDQ = 1.8 V components. The
transition time is measured between 9IH and 9IL. All AC measurements assume WT = 1 ns with the
AC output load circuit (details will be defined later). Specified WAC and WOH parameters are
measured with a 30 pF only, without any resistive termination and with a input signal of 1V / ns
edge rate.
I/O
30 pF
Measurement conditions for
tAC and tOH
3. If clock rising time is longer than 1 ns, a time (WT/2 - 0.5) ns has to be added to this parameter.
4. If WT is longer than 1 ns, a time (WT - 1) ns has to be added to this parameter.
5. These parameter account for the number of clock cycle and depend on the operating frequency
of the clock, as follows:
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VSHFLILHG YDOXH RI WLPLQJ SHULRG FRXQWHG LQ IUDFWLRQV DV D ZKROH
QXPEHU
6. Access time from clock tac is 4.6 ns for PC133 components with no termination and 0 pF load,
Data out hold time toh is 1.8 ns for PC133 components with no termination and 0 pF load.
7. The write recovery time of twr = 14 ns cycles allows the use of one clock cycle for the write
recovery time when the memory operation frequency is equal or less than 72MHz. For all
memory operation frequencies higher than 72MHz two clock cycles for twr are mandatory.
INFINEON recommends to use two clock cylces for the write recovery time in all applications.
INFINEON Technologies
19
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
Package Outlines
FBGA-BOC package 54 BGA package with 3 depop. rows
INFINEON Technologies
20
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
7LPLQJ'LDJUDPV
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. AC- Parameters
8.1 AC Parameters for a Write Timing
8.2 AC Parameters for a Read Timing
9. Mode Register Set
10. Power on Sequence and Auto Refresh (CBR)
11. Clock Suspension (using CKE)
11. 1 Clock Suspension During Burst Read CAS Latency = 2
11. 2 Clock Suspension During Burst Read CAS Latency = 3
11. 3 Clock Suspension During Burst Write CAS Latency = 2
11. 4 Clock Suspension During Burst Write CAS Latency = 3
12. Power Down Mode and Clock Suspend
13. Self Refresh ( Entry and Exit )
14. Auto Refresh ( CBR )
15. Random Column Read ( Page within same Bank)
15.1 CAS Latency = 2
15.2 CAS Latency = 3
16. Random Column Write ( Page within same Bank)
16.1 CAS Latency = 2
16.2 CAS Latency = 3
17. Random Row Read ( Interleaving Banks) with Precharge
17.1 CAS Latency = 2
17.2 CAS Latency = 3
18. Random Row Write ( Interleaving Banks) with Precharge
18.1 CAS Latency = 2
18.2 CAS Latency = 3
19. Precharge Termination of a Burst
20. Deep Power Down Mode
20.1 Deep Power Down Mode Entry
20.2 Deep Power Down Mode Exit
INFINEON Technologies
21
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
%DQN$FWLYDWH&RPPDQG&\FOH
(CAS latency = 3)
T0
T1
T
T
T
T
T
CLK
Address
Bank B
Row Addr.
Bank B
Col. Addr.
t RCD
Command
Bank B
Activate
NOP
Bank B
Row Addr.
Bank A
Row Addr.
t RRD
NOP
Write B
with Auto
Precharge
Bank A
Activate
NOP
Bank B
Activate
t RC
"H" or "L"
SPT03784
%XUVW5HDG2SHUDWLRQ
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
t CK2 , DQ’s
CAS
latency = 3
t CK3 , DQ’s
INFINEON Technologies
DOUT A0 DOUT A1 DOUT A2 DOUT A3
DOUT A0 DOUT A1 DOUT A2 DOUT A3
SPT03712
22
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
5HDG,QWHUUXSWHGE\D5HDG
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read A
Read B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
t CK2 , DQ’s
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
CAS
latency = 3
t CK3 , DQ’s
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
SPT03713
5HDGWR:ULWH,QWHUYDO
5HDGWR:ULWH,QWHUYDO
(Burst Length = 4, CAS latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Minimum delay between the Read and Write
Commands = 4 + 1 = 5 cycles
Write latency t DQW of DQMx
DQMx
t DQZ
Command
NOP
Read A
DQ’s
NOP
NOP
NOP
DOUT A0
NOP
Write B
NOP
NOP
DIN B0
DIN B1
DIN B2
Must be Hi-Z before
the Write Command
"H" or "L"
INFINEON Technologies
SPT03787
23
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
0LQLPXP5HDGWR:ULWH,QWHUYDO
(Burst Length = 4, CAS latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Write A
NOP
NOP
NOP
DIN A0
DIN A1
DIN A2
DIN A3
CLK
t DQW
DQM
t DQZ
1 Clk Interval
Command
NOP
NOP
Bank A
Activate
NOP
Read A
Must be Hi-Z before
the Write Command
CAS
latency = 2
t CK2 , DQ’s
"H" or "L"
SPT03939
1RQ0LQLPXP5HDGWR:ULWH,QWHUYDO
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
NOP
CLK
t DQW
DQM
t DQZ
Command
NOP
Read A
NOP
NOP
Read A
NOP
Write B
Must be Hi-Z before
the Write Command
CAS
latency = 2
t CK2 , DQ’s
DOUT A0 DOUT A1
DIN B0
DIN B1
DIN B2
CAS
latency = 3
t CK3 , DQ’s
DOUT A0
DIN B0
DIN B1
DIN B2
"H" or "L"
INFINEON Technologies
SPT03940
24
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
%XUVW:ULWH2SHUDWLRQ
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Write A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DIN A0
DIN A1
DIN A2
DIN A3
don’t care
CLK
Command
DQ’s
The first data element and the Write
are registered on the same clock edge.
INFINEON Technologies
Extra data is ignored after
termination of a Burst.
25
SPT03790
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
:ULWHDQG5HDG,QWHUUXSW
:ULWH,QWHUUXSWHGE\D:ULWH
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Write A
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DIN B1
DIN B2
DIN B3
CLK
Command
1 Clk Interval
DQ’s
DIN A0
DIN B0
SPT03791
:ULWH,QWHUUXSWHGE\D5HDG
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Write A
Read B
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
t CK2 , DQ’s
DIN A0
don’t care
CAS
latency = 3
t CK3 , DQ’s
DIN A0
don’t care
DOUT B0 DOUT B1 DOUT B2 DOUT B3
don’t care
DOUT B0 DOUT B1 DOUT B2 DOUT B3
Input data must be removed from the DQ’s
at least one clock cycle before the Read data
appears on the outputs to avoid data contention.
Input data for the Write is ignored.
SPT03719
INFINEON Technologies
26
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
%XUVW:ULWHDQG5HDGZLWK$XWR3UHFKDUJH
%XUVW:ULWHZLWK$ XWR3UHFKDUJH
%XUVW/HQJWK
&$6ODWHQF\
T0
T1
Bank A
Active
NOP
T2
T3
T4
T5
T6
T7
Write A
NOP
NOP
NOP
NOP
T8
CLK
CAS Latency = 2:
Command
Auto Precharge
t WR
DIN A0
DQ’s
NOP
NOP
NOP
t RP
*
DIN A1
Activate
CAS Latency = 3:
Command
Bank A
Active
NOP
NOP
Write A
NOP
Auto Precharge
NOP
NOP
t WR
DIN A0
DQ’s
*
DIN A1
*
Activate
t RP
Begin Auto Precharge
Bank can be reactivated after trp
%XUVW5HDGZLWK$XWR3UHFKDUJH
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read A
with AP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
DQ’s
CAS
latency = 3
DQ’s
*
DOUT A0
DOUT A1
DOUT A2
t RP
DOUT A3
t RP
*
DOUT A0
DOUT A1
DOUT A2
DOUT A3
* Begin Auto Precharge
Bank can be reactivated after trp
INFINEON Technologies
27
SPT03721_2
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
$&3DUDPHWHUV
$&3DUDPHWHUVIRUD:ULWH7LPLQJ
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CH
t CK2
t CL
CKE
t CKS
t CH
t CKH
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
t CS
CS
RAS
CAS
WE
BS
t AH
AP
RBx
RAx
RAy
RAz
RBy
RAz
RBy
t AS
Addr.
RAx
CAx
RAy
CBx
RBx
RAy
DQM
t WR
t RCD
t DS
t RP
t DH
t RC
Hi-Z
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3
DQ
Activate
Command
Bank A
Activate
Command
Bank B
Write with
Auto Precharge
Command
Bank A
INFINEON Technologies
t RP
t RRD
Ay0 Ay1 Ay2 Ay3
Activate
Write
Command Command
Bank A
Bank A
Write with
Auto Precharge
Command
Bank B
t WR
Precharge Activate
Activate
Command Command Command
Bank A
Bank A
Bank B
SPT03910_2
28
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
$&3DUDPHWHUVIRUD5HDG7LPLQJ
Burst Length = 2, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
t CH
t CK2
t CL
CKE
t CKH
t CS
Begin Auto
Precharge
Bank B
t CKS
t CH
CS
RAS
CAS
WE
BS
t AH
RAx
AP
RBx
RAy
t AS
Addr.
RAx
CAx
RBx
RBx
RAy
t RRD
t RAS
t RC
DQM
tAC2
t LZ
t OH
t RCD
DQ
t HZ
Hi-Z
t HZ
Ax0
Activate
Command
Bank A
INFINEON Technologies
Read
Command
Bank A
t RP
t AC2
Activate
Command
Bank B
29
Ax1
Read with
Auto Precharge
Command
Bank B
Bx0
Precharge
Command
Bank A
Bx1
Activate
Command
Bank A
SPT03911_2
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
0RGH5HJLVWHU6HW
CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t RSC
CS
RAS
CAS
WE
BS
AP
Address Key
Addr.
Precharge
Command
All Banks
Any
Command
Mode Register
Set Command
INFINEON Technologies
SPT03912_2
30
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
3RZHURQ6HTXHQFHDQG$XWR5HIUHVK&%5
T2
T3
T4
CKE
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
~
~
~
~
~
~
T1
~
~
T0
CLK
2 Clock min.
Minimum of 8 Refresh Cycles are required
~
~
~
~
High Level
is required
~
~ ~
~
~
~
AP
~
~ ~
~
BS
~
~
~
~ ~
~
WE
~
~ ~
~
~
~ ~
~
CAS
~
~ ~
~
~
~
~ ~
RAS
~
~ ~
~
~
~
~
~
CS
~
~ ~
~
~
~ ~
~
~
~
~
~
Address Key
Addr.
DQM
t RC
~
~
Hi-Z
~
~
t RP
DQ
Precharge
Command
All Banks
Inputs must be
stable for 200 µs
8th Auto Refresh
Command
1st Auto Refresh
Command
INFINEON Technologies
Mode Register
Set Command
Any
Command
SPT03913
31
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&ORFN6XVSHQVLRQ8VLQJ&.(
&ORFN6XVSHQVLRQ'XULQJ%XUVW5HDG&$6/DWHQF\
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
CAx
DQM
t CSL
t CSL
DQ
Hi-Z
Ax0
Activate
Read
Command Command
Bank A
Bank A
INFINEON Technologies
t HZ
t CSL
Ax1
Ax2
Ax3
Clock
Suspend
1 Cycle
Clock
Suspend
2 Cycles
Clock
Suspend
3 Cycles
32
SPT03914
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&ORFN6XVSHQVLRQ'XULQJ%XUVW5HDG&$6/DWHQF\
Burst Length = 4, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
CAx
t CSL
t CSL
DQM
t CSL
t HZ
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
INFINEON Technologies
Ax1
Ax2
Ax3
Clock
Suspend
1 Cycle
Clock
Suspend
2 Cycles
Clock
Suspend
3 Cycles
33
SPT03915
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&ORFN6XVSHQVLRQ'XULQJ%XUVW:ULWH&$6/DWHQF\
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
CAx
DQM
DQ
Hi-Z
Activate
Command
Bank A
DAx0
DAx1
Clock
Suspend
1 Cycle
DAx2
Clock
Suspend
2 Cycles
DAx3
Clock
Suspend
3 Cycles
Write
Command
Bank A
INFINEON Technologies
SPT03916
34
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&ORFN6XVSHQVLRQ'XULQJ%XUVW:ULWH&$6/DWHQF\
Burst Length = 4, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
CS
RAS
CAS
WE
BA
A8/AP
RAx
Addr.
RAx
CAx
DQMx
DQ
Hi-Z
DAx0
Activate
Command
Bank A
DAx1
Clock
Suspend
1 Cycle
DAx2
Clock
Suspend
2 Cycles
DAx3
Clock
Suspend
3 Cycles
Write
Command
Bank A
INFINEON Technologies
SPT03917
35
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
3RZHU'RZQ0RGHDQG&ORFN6XVSHQG
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CKS
t CK2
t CKS
CKE
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
CAx
DQM
t HZ
DQ
Hi-Z
Ax0 Ax1
Activate
Command
Bank A
Active
Standby
Clock Suspend
Mode Entry
Read
Command
Bank A
Ax2
Clock Mask
End
Clock Mask
Start
Clock Suspend
Mode Exit
Ax3
Precharge
Command
Bank A
Precharge
Standby
Power Down
Mode Entry
Any
Command
Power Down
Mode Exit
SPT03918
INFINEON Technologies
36
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
6HOI5HIUHVK(QWU\DQG([LW
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
~
~
CLK
~
~
CKE
~
~
t CKS
t CKS
~
~
~
~
CS
~
~
~
~
RAS
~
~
CAS
~
~
~
~
~
~
WE
~
~
BS
~ ~
~
~
AP
~
~
~
~
~
~
Addr.
t SREX
t RC*)
DQM
~
~
Hi-Z
~
~
DQ
All Banks
must be idle
Self Refresh
Entry
Begin Self Refresh
Exit Command
Self Refresh Exit
Command issued
Self Refresh
Exit
Any
Command
*) minimum RAS cycle
time depends on CAS
Latency and trc
INFINEON Technologies
37
SPT03919-2
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
$XWR5HIUHVK&%5
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
RAx
AP
RAx
Addr.
t RC
t RP
CAx
t RC
(Minimum Interval)
DQM
Hi-Z
Ax0 Ax1 Ax2 Ax3
DQ
Precharge Auto Refresh
Command Command
All Banks
Auto Refresh
Command
Activate
Read
Command Command
Bank A
Bank A
SPT03920_2
INFINEON Technologies
38
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
5DQGRP&ROXPQ5HDG3DJHZLWKLQVDPH%DQN
&$ 6/DWHQF\
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RAw
Addr.
RAw
RAz
CAw
CAx
CAy
RAz
CAz
DQM
DQ
Hi Z
Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3
Activate
Command
Bank A
Read
Command
Bank A
INFINEON Technologies
Read
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank A
39
Activate
Command
Bank A
Az0 Az1 Az2 Az3
Read
Command
Bank A
SPT03921
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&$ 6/DWHQF\
Burst Length = 4, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
CS
RAS
CAS
WE
BS
AP
RAw
Addr.
RAw
RAz
CAw
CAx
CAy
RAz
CAz
DQM
DQ
Hi Z
Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3
Activate
Command
Bank A
Read
Command
Bank A
INFINEON Technologies
Read
Command
Bank A
Read
Command
Bank A
40
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A SPT03922
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
5DQGRP&ROXPQZULWH3DJHZLWKLQVDPH%DQN
&$ 6/DWHQF\
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RBw
Addr.
RBw
RBz
CBx
CBy
DBw0 DBw1 DBw2 DBw3 DBx0
DBx1 DBy0
CBw
RBz
CBz
DQM
Hi Z
DQ
Activate
Write
Command Command
Bank B
Bank B
DBy1 DBy2
Write
Write
Command Command
Bank B
Bank B
DBy3
DBz0
DBz1 DBz2
DBz3
Precharge Activate
Read
Command Command Command
Bank B
Bank B
Bank B
SPT03923_2
INFINEON Technologies
41
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&$6/DWHQF\
Burst Length = 4, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
CS
RAS
CAS
WE
BS
AP
RBz
Addr.
RBz
RBz
CBz
CBx
CBy
RBz
CBz
DQM
DQ
Hi Z
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
Activate
Command
Bank B
Write
Command
Bank B
INFINEON Technologies
Write
Command
Bank B
Write
Command
Bank B
42
DBz0 DBz1
Precharge
Command
Bank B
Activate
Command
Bank B
Write
Command
Bank B SPT03924
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
5DQGRP5RZ5HDG,QWHUOHDYLQJ%DQNVZLWK3UHFKDUJH
&$ 6/DWHQF\
Burst Length = 8, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
High
CS
RAS
CAS
WE
BS
AP
RBx
Addr.
RBx
RAx
CBx
RAx
RBy
CAx
RBy
CBy
t RP
t RCD
DQM
t AC2
Hi-Z
DQ
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7
Activate
Read
Command Command
Bank B
Bank B
Activate
Command
Bank A
Precharge Activate
Command Command
Bank B
Bank B
Read
Command
Bank A
INFINEON Technologies
43
By0 By1
Read
Command
Bank B
SPT03925_2
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&$ 6/DWHQF\
Burst Length = 8, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
High
CS
RAS
CAS
WE
BS
AP
RBx
Addr.
RBx
RAx
CBx
RBy
RAx
CAx
RBy
t AC3
t RCD
CBy
t RP
DQM
DQ
Hi-Z
Activate
Command
Bank B
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7 By0
Read
Command
Bank B
Activate
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank B
Activate
Command
Bank B
Read
Command
Bank B
Precharge
Command
Bank A
SPT03926
INFINEON Technologies
44
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
5DQGRP5RZ:ULWH,QWHUOHDYLQJ%DQNVZLWK3UHFKDUJH
&$ 6/DWHQF\
Burst Length = 8, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
High
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
RBx
CAx
RAy
RBx
CBx
t RCD
RAy
t WR
CAy
t WR
t RP
DQM
Hi-Z
DQ
DAx0
DAx1 DAx2
Activate
Write
Command Command
Bank A
Bank A
DAx3
DAx4
DAx5
DAx6
DAx7
DBx0
DBx1 DBx2
Write
Activate
Command Command
Bank B
Bank B
Precharge
Command
Bank A
INFINEON Technologies
45
DBx3
DBx4
Activate
Command
Bank A
DBx5
DBx6
DBx7
DAy0
DAy1 DAy2
DAy3
DAy4
Precharge
Command
Bank B
Write
Command
Bank A
SPT03927_2
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&$ 6/DWHQF\
Burst Length = 8, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
High
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
RAy
RBx
CAx
RBx
CBx
t RCD
RAy
t WR
t RP
CAy
t WR
DQM
DQ
Hi-Z
Activate
Command
Bank A
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3
Write
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank B
SPT03928
INFINEON Technologies
46
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
3UHFKDUJHWHUPLQDWLRQRID%XUVW
&$ 6/DWHQF\
Burst Length = 8 or Full Page, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
High
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
RAz
RAy
CAx
RAy
CAy
t RP
RAz
CAz
t RP
t RP
Ay0 Ay1 Ay2
Az0 Az1 Az2
DQM
DQ
Hi Z
Activate
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
Command
Bank A
Precharge Termination
of a Write Burst.
Write Data is masked.
Precharge
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank A
Precharge
Command
Bank A
Precharge Termination
of a Read Burst.
SPT03933
INFINEON Technologies
47
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
'HHS3RZHU'RZQ0RGH
'HHS3RZHU'RZQ0RGH(QWU\
CLK
CKE
CS
WE
CAS
RAS
Addr.
DQM
DQ
input
DQ
output
High-Z
t RP
Precharge Command
Deep Power Down Entry
Deep Power Down Mode
Normal Mode
DP1.vsd
The deep power down mode has to be maintained for a minimum of 100µs.
INFINEON Technologies
48
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
'HHS3RZHU'RZQ([LW
The deep power down mode is exited by asserting CKE high. After the exit, the following sequence is needed to
enter a new command:
1. Maintain NOP input conditions for a minimum of 200 µs
2. Issue precharge commands for all banks of the device
3. Issue eight or more autorefresh commands
4. Issue a mode register set command to initialize the mode register
5. Issue an extended mode register set command to initialize the extende mode register
CLK
CK E
CS
RAS
CAS
WE
200 ms
Deep Power Do wn
exi t
INFINEON Technologies
tRP
All banks
prec harge
tRC
Au to
refresh
Auto
refresh
49
Mode
Register
Set
Exte nded
Mode
Regis ter
Set
New
Com mand
Accepted
Here
2003-02
HYB/E 25L128160AC
128-MBit Mobile-RAM
&KDQJH/LVW
First Revision (Target Datasheet)
12/18/00
01/15/01
Various changes after JEDEC Low Power Task Force meeting in
San Jose, Jan 9-10. 01:
Introduction of a Extended Mode Register for temperature-compensated and partial array Self-Refresh
New Deep Power Down Mode
New 54 BGA package with 9 x 6 ball locations and 3 depop rows.
01/22/01
Truth table for Deep Power Down Mode changed according to latest JEDEC proposal some typos corrected
02/12/01
Pin J8 is “A2”
Extended Mode Register “half array BA1=0”
02/19/01
Extended Mode Register, some clarifications
Datasheet changed to “preliminary”
Outline dimensions for BGA packages added
Electrical pinout for x8 added
03/07/01
Full Page Mode added, thruth table clarified
04/02/01
Pin Configuration for x8 devices corrected : LDQM wird NC und UDQM wird DQM
Deep Power Down Exit waveform changed according to JEDEC ballot
07/02/01
Page 10: Change of power-on description to : ”9DD must be applied before or at the
same time as 9DDQ to the specified voltage when the input signals are held in the
“NOP” or “DESELECT” state”
08/23/01
Adjusted currents
Introduced CAS Latency 1
Solder Ball Diameter changed
09/18/01
Adjusted currents
Introduced max. package height
11/14/01
Jedec conforming package drawings included
tRCD and tRP for -7.5 changed
Minimum time of deep power down mode added
tAC for CAS Latency=1 specified
25/03/02
ICC3N (CKE high) changed from 32ma to 35mA for -7.5
and from 28mA to 31mA for -8.0
28/02/03
p.15: values for ICC1 and ICC5 changed
INFINEON Technologies
50
2003-02