ETC HYB39S256160AT-8B

HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
256-MBit Synchronous DRAM
Preliminary Datasheet
• Multiple Burst Read with Single Write
Operation
• High Performance:
• Automatic and Controlled Precharge
Command
-7.5
-8
-8A
-8B
Units
fCK
133
125
125
100
MHz
• Data Mask for Byte Control (x16)
tCK3
7.5
8
8
10
ns
• Auto Refresh (CBR) and Self Refresh
tAC3
5.4
6
6
6
ns
• Power Down Mode
tCK2
10
10
12
15
ns
• 8192 Refresh Cycles / 64 ms (7.8 µs)
tAC2
6
6
6
7
ns
• Random Column Address every CLK
(1-N Rule)
• Data Mask for Read/Write Control (x4, x8)
• Fully Synchronous to Positive Clock Edge
• Single 3.3 V ± 0.3 V Power Supply
• 0 to 70 °C operating temperature
• LVTTL Interface
• Four Banks controlled by BA0 & BA1
• Plastic Packages:
P-TSOPII-54 400mil width (x4, x8, x16)
• Programmable CAS Latency: 2 & 3
• -7.5 version for PC133 3-3-3 application
-8 parts for PC100 2-2-2 operation
-8A parts for PC100 3-2-2 operation
-8B parts for PC100 3-2-3 operation
• Programmable Wrap Sequence: Sequential
or Interleave
• Programmable Burst Length: 1, 2, 4, 8
The HYB 39S256400/800/160AT are four bank Synchronous DRAM’s organized as
4 banks × 16 MBit × 4, 4 banks × 8 MBit × 8 and 4 banks × 4 Mbit × 16 respectively. These
synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip
architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
The chip is fabricated using the Infineon advanced 0.19 µm 256 MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products,
both electrically and mechanically. All of the control, address, data input and output circuits are
synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur
at higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible
depending on burst length, CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a
single 3.3 V ± 0.3 V power supply and are available in TSOPII packages.
Data Book
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Ordering Information
Type
Ordering Code Package
Description
HYB 39S256400AT-7.5 PC133-333-520 P-TSOP-54-2 (400mil) 133 MHz 4B × 16M x4 SDRAM
HYB 39S256400AT-8
PC100-222-620 P-TSOP-54-2 (400mil) 125 MHz 4B × 16M x4 SDRAM
HYB 39S256400AT-8A PC100-322-620 P-TSOP-54-2 (400mil) 125 MHz 4B × 16M x4 SDRAM
HYB 39S256400AT-8B PC100-323-620 P-TSOP-54-2 (400mil) 100 MHz 4B × 16M x4 SDRAM
HYB 39S256800AT-7.5 PC133-333-520 P-TSOP-54-2 (400mil) 133 MHz 4B × 8M x8 SDRAM
HYB 39S256800AT-8
PC100-222-620 P-TSOP-54-2 (400mil) 125 MHz 4B × 8M x8 SDRAM
HYB 39S256800AT-8A PC100-322-620 P-TSOP-54-2 (400mil) 125 MHz 4B × 8M x8 SDRAM
HYB 39S256800AT-8B PC100-323-620 P-TSOP-54-2 (400mil) 100 MHz 4B × 8M x8 SDRAM
HYB 39S256160AT-7.5 PC133-333-520 P-TSOP-54-2 (400mil) 133 MHz 4B × 4M x16 SDRAM
HYB 39S256160AT-8
PC100-222-620 P-TSOP-54-2 (400mil) 125 MHz 4B × 4M x16 SDRAM
HYB 39S256160AT-8A PC100-322-620 P-TSOP-54-2 (400mil) 125 MHz 4B × 4M x16 SDRAM
HYB 39S256160AT-8B PC100-323-620 P-TSOP-54-2 (400mil) 100 MHz 4B × 4M x16 SDRAM
Pin Definitions and Functions
CLK
Clock Input
DQ
Data Input/Output
CKE
Clock Enable
DQM, LDQM,
UDQM
Data Mask
CS
Chip Select
VDD
Power (+ 3.3 V)
RAS
Row Address Strobe
VSS
Ground
CAS
Column Address Strobe
VDDQ
Power for DQ’s (+ 3.3 V)
WE
Write Enable
VSSQ
Ground for DQ’s
A0 - A12
Address Inputs
N.C.
Not connected
BA0, BA1
Bank Select
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
16 M x 16
32 M x 8
64 M x 4
VDD
VDD
VDD
DQ0
DQ0
N.C.
VDDQ
VDDQ
VDDQ
DQ1
DQ2
N.C.
DQ1
N.C.
DQ0
VSSQ
VSSQ
VSSQ
DQ3
DQ4
N.C.
DQ2
N.C.
N.C.
VDDQ
VDDQ
VDDQ
DQ5
DQ6
N.C.
DQ3
N.C.
DQ1
VSSQ
VSSQ
VSSQ
DQ7
N.C.
N.C.
VDD
VDD
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
N.C.
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
N.C.
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VDD
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
VSS
VSS
N.C.
DQ7
DQ15
VSSQ
VSSQ
VSSQ
N.C.
DQ3
N.C.
DQ6
DQ14
DQ13
VDDQ
VDDQ
VDDQ
N.C.
N.C.
N.C.
DQ5
DQ12
DQ11
VSSQ
VSSQ
VSSQ
N.C.
DQ2
N.C.
DQ4
DQ10
DQ9
VDDQ
VDDQ
VDDQ
N.C.
N.C.
DQ8
VSS
VSS
VSS
N.C.
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
N.C.
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
N.C.
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
VSS
TSOPII-54 (400 mil x 875 mil, 0.8 mm pitch)
SPP04126
Pin Configuration for x4, x8 & x16 Organized 256M-DRAMs
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Functional Block Diagrams
A0 - A12,
BA0, BA1
Column Address
Counter
Column Address
Buffer
Row Address
Buffer
Row
Decoder
Row
Decoder
Row
Decoder
Row
Decoder
Memory
Array
Memory
Array
Memory
Array
Memory
Array
8196
x 2048
x 4 Bit
Input Buffer
Bank 1
8196
x 2048
x 4 Bit
Output Buffer
Bank 2
8196
x 2048
x 4 Bit
Refresh Counter
Column Decoder
Sense amplifier & I(O) Bus
Bank 0
Column Decoder
Sense amplifier & I(O) Bus
A0 - A9, A11, AP,
BA0, BA1
Column Decoder
Sense amplifier & I(O) Bus
Row Addresses
Column Decoder
Sense amplifier & I(O) Bus
Column Addresses
Bank 3
8196
x 2048
x 4 Bit
Control Logic &
Timing Generator
CLK
CKE
CS
RAS
CAS
WE
DQM
DQ0 - DQ3
SPB04127
Block Diagram: 64M × 4 SDRAM (13 / 11 / 2 addressing)
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
A0 - A12,
BA0, BA1
Column Address
Counter
Column Address
Buffer
Row Address
Buffer
Row
Decoder
Row
Decoder
Row
Decoder
Row
Decoder
Memory
Array
Memory
Array
Memory
Array
Memory
Array
8192
x 1024
x 8 Bit
Input Buffer
Bank 1
8192
x 1024
x 8 Bit
Output Buffer
Bank 2
8192
x 1024
x 8 Bit
Refresh Counter
Column Decoder
Sense amplifier & I(O) Bus
Bank 0
Column Decoder
Sense amplifier & I(O) Bus
A0 - A9, AP,
BA0, BA1
Column Decoder
Sense amplifier & I(O) Bus
Row Addresses
Column Decoder
Sense amplifier & I(O) Bus
Column Addresses
Bank 3
8192
x 1024
x 8 Bit
Control Logic &
Timing Generator
CLK
CKE
CS
RAS
CAS
WE
DQM
DQ0 - DQ7
SPB04128
Block Diagram: 32M × 8 SDRAM (13 / 10 / 2 addressing)
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
A0 - A8, AP,
BA0, BA1
A0 - A12,
BA0, BA1
Column Address
Counter
Column Address
Buffer
Row Address
Buffer
Row
Decoder
Row
Decoder
Bank 0
8192 x 512
x 16 Bit
Input Buffer
Memory
Array
Bank 1
8192 x 512
x 16 Bit
Memory
Array
Bank 2
8192 x 512
x 16 Bit
Output Buffer
Row
Decoder
Column Decoder
Sense amplifier & I(O) Bus
Memory
Array
Refresh Counter
Row
Decoder
Column Decoder
Sense amplifier & I(O) Bus
Column Decoder
Sense amplifier & I(O) Bus
Row Addresses
Column Decoder
Sense amplifier & I(O) Bus
Column Addresses
Memory
Array
Bank 3
8192 x 512
x 16 Bit
Control Logic &
Timing Generator
CLK
CKE
CS
RAS
CAS
WE
DQMU
DQML
DQ0 - DQ15
SPB04129
Block Diagram: 16M × 16 SDRAM (13 / 9 / 2 addressing)
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Signal Pin Description
Pin
Type
Signal Polarity Function
CLK
Input
Pulse
Positive The system clock input. All of the SDRAM inputs are
Edge
sampled on the rising edge of the clock.
CKE
Input
Level
Active
High
Activates the CLK signal when high and deactivates the
CLK signal when low, thereby initiates either the Power
Down mode, Suspend mode, or the Self Refresh mode.
CS
Input
Pulse
Active
Low
CS enables the command decoder when low and disables
the command decoder when high. When the command
decoder is disabled, new commands are ignored but
previous operations continue.
RAS
CAS
WE
Input
Pulse
Active
Low
When sampled at the positive rising edge of the clock,
CAS, RAS, and WE define the command to be executed by
the SDRAM.
A0 - A12
Input
Level
–
During a Bank Activate command cycle, A0-A12 define the
row address (RA0-RA12) when sampled at the rising clock
edge.
During a Read or Write command cycle, A0-An define the
column address (CA0-CAn) when sampled at the rising
clock edge.CAn depends from the SDRAM organization:
64M x 4 SDRAM CAn = CA9, CA11
(Page Length = 2048 bits)
32M x 8 SDRAM CAn = CA9 (Page Length = 1024 bits)
16M x 16 SDRAMCAn = CA8 (Page Length = 512 bits)
In addition to the column address, A10(= AP) is used to
invoke autoprecharge operation at the end of the burst read
or write cycle. If A10 is high, autoprecharge is selected and
BA0, BA1 defines the bank to be precharged. If A10 is low,
autoprecharge is disabled.
During a Precharge command cycle, A10 (= AP) is used in
conjunction with BA0 and BA1 to control which bank(s) to
precharge. If A10 is high, all four banks will be precharged
regardless of the state of BA0 and BA1. If A10 is low, then
BA0 and BA1 are used to define which bank to precharge.
BA0, BA1 Input
DQx
Data Book
Level
–
Bank Select Inputs. Bank address inputs selects which of
the four banks a command applies to.
Input
Level
Output
–
Data Input/Output pins operate in the same manner as on
conventional DRAMs.
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256-MBit Synchronous DRAM
Signal Pin Description (cont’d)
Pin
Type
Signal Polarity Function
DQM
LDQM
UDQM
Input
Pulse
VDD
VSS
VDDQ
VSSQ
Data Book
Active
High
The Data Input/Output mask places the DQ buffers in a
high impedance state when sampled high. In Read mode,
DQM has a latency of two clock cycles and controls the
output buffers like an output enable. In Write mode, DQM
has a latency of zero and operates as a word mask by
allowing input data to be written if it is low but blocks the
write operation if DQM is high.
One DQM input it present in x4 and x8 SDRAMs, LDQM
and UDQM controls the lower and upper bytes in x16
SDRAMs.
Supply –
–
Power and ground for the input buffers and the core logic.
Supply –
–
Isolated power supply and ground for the output buffers to
provide improved noise immunity.
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256-MBit Synchronous DRAM
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Operation
Device
State
CKE
n-1
CKE
n
DQM
BA0
BA1
AP=
A10
Addr.
CS
RAS
CAS
WE
Bank Active
Idle3
H
X
X
V
V
V
L
L
H
H
Bank Precharge
Any
H
X
X
V
L
X
L
L
H
L
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
Write
Active
3
H
X
X
V
L
V
L
H
L
L
Write with Autoprecharge
Active3
H
X
X
V
H
V
L
H
L
L
Active
3
H
X
X
V
L
V
L
H
L
H
Read with Autoprecharge
Active
3
H
X
X
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
V
V
V
L
L
L
L
No Operation
Any
H
X
X
X
X
X
L
H
H
H
Burst Stop
Active
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
Auto Refresh
Idle
H
H
X
X
X
X
L
L
L
H
Self Refresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
Self Refresh Exit
Idle
(Self
Refr.)
H
X
X
X
L
H
X
X
X
X
L
H
H
X
H
X
X
X
H
L
X
X
X
X
L
H
H
X
H
X
X
X
L
H
H
L
Read
Power Down Entry
(Precharge or active
standby)
Idle
Active4
Power Down Exit
Any
(Power
Down)
L
H
X
X
X
X
Active
H
X
L
X
X
X
X
X
X
X
Data Write/Output Disable Active
H
X
H
X
X
X
X
X
X
X
Data Write/Output Enable
Notes
1. V = Valid, x = Don’t Care, L = Low Level, H = High Level
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode
cycle device is clock suspend mode.
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256-MBit Synchronous DRAM
5. Power Down Mode can not entry in the burst cycle.
BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Address Bus (Ax)
Operation Mode
CAS Latency
BT
Burst Length
Mode Register (Mx)
Operation Mode
Burst Type
M9
0
Mode
burst read / burst write
M3
Type
0
Sequential
1
burst read / single write
1
Interleave
Burst Length
CAS Latency
M6
M5
M4
Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2
0
1
1
3
1
0
0
1
0
1
1
1
0
1
1
1
Data Book
Reserved
10
M2
M1
M0
0
0
0
Length
Sequential
Interleave
0
1
1
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
1
0
1
1
1
0
Reserved
Reserved
1
1
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HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Power On and Initialization
The default power on state of the mode register is supplier specific and may be undefined. The
following power on and initialization sequence guarantees the device is preconditioned to each
users specific needs. Like a conventional DRAM, the Synchronous DRAM must be powered up and
initialized in a predefined manner.During power on, all VDD and VDDQ pins must be built up
simultaneously to the specified voltage when the input signals are held in the “NOP” state. The
power on voltage must not exceed VDD + 0.3 V on any of the input pins or VDD supplies. The CLK
signal must be started at the same time. After power on, an initial pause of 200 µs is required
followed by a precharge of all banks using the precharge command. To prevent data contention on
the DQ bus during power on, it is required that the DQM and CKE pins be held high during the initial
pause period. Once all banks have been precharged, the Mode Register Set Command must be
issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also
required.These may be done before or after programming the Mode Register. Failure to follow these
steps may lead to unpredictable start-up modes.
Programming the Mode Register
The Mode register designates the operation mode at the read or write cycle. This register is divided
into 4 fields. A Burst Length Field to set the length of the burst, an Addressing Selection bit to
program the column access sequence in a burst cycle (interleaved or sequential), a CAS Latency
Field to set the access time at clock cycle and a Operation mode field to differentiate between
normal operation (Burst read and burst Write) and a special Burst Read and Single Write mode. The
mode set operation must be done before any activate command after the initial power up. Any
content of the mode register can be altered by re-executing the mode set command. All banks must
be in precharged state and CKE must be high at least one clock before the mode set operation. After
the mode register is set, a Standby or NOP command is required. Low signals of RAS, CAS, and
WE at the positive edge of the clock activate the mode set operation. Address input data at this
timing defines parameters to be set as shown in the previous table.
Read and Write Operation
When RAS is low and both CAS and WE are high at the positive edge of the clock, a RAS cycle
starts. According to address data, a word line of the selected bank is activated and all of sense
amplifiers associated to the wordline are set. A CAS cycle is triggered by setting RAS high and CAS
low at a clock timing after a necessary delay, tRCD, from the RAS timing. WE is used to define either
a read (WE = H) or a write (WE = L) at this stage.
SDRAM provides a wide variety of fast access modes. In a single CAS cycle, serial data read or
write operations are allowed at up to a 133 MHz data rate. The numbers of serial data bits are the
burst length programmed at the mode set operation, i.e., one of 1, 2, 4 and 8. Column addresses are
segmented by the burst length and serial data accesses are done within this boundary. The first
column address to be accessed is supplied at the CAS timing and the subsequent addresses are
generated automatically by the programmed burst length and its sequence. For example, in a burst
length of 8 with interleave sequence, if the first address is ‘2’, then the rest of the burst sequence is
3, 0, 1, 6, 7, 4, and 5.
Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column
address are possible once the RAS cycle latches the sense amplifiers. The maximum tRAS or the
refresh interval time limits the number of random column accesses. A new burst access can be
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256-MBit Synchronous DRAM
done even before the previous burst ends. The interrupt operation at every clock cycle is supported.
When the previous burst is interrupted, the remaining addresses are overridden by the new address
with the full burst length. An interrupt which accompanies an operation change from a read to a write
is possible by exploiting DQM to avoid bus contention.
When two or more banks are activated sequentially, interleaved bank read or write operations are
possible. With the programmed burst length, alternate access and precharge operations on two or
more banks can realize fast serial data access modes among many different pages. Once two or
more banks are activated, column to column interleave operation can be performed between
different pages.
Burst Length and Sequence
Burst
Length
Starting
Address
(A2 A1 A0)
Sequential Burst Addressing
(decimal)
Interleave Burst
Addressing
(decimal)
2
xx0
xx1
0, 1
1, 0
0, 1
1, 0
4
x00
x01
x10
x11
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
8
000
001
010
011
100
101
110
111
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
2
3
4
5
6
7
0
1
3
4
5
6
7
0
1
2
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
6
7
0
1
2
3
4
5
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
1
0
3
2
5
4
7
6
2
3
0
1
6
7
4
5
3
2
1
0
7
6
5
4
4
5
6
7
0
1
2
3
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
Refresh Mode
SDRAM has two refresh modes, Auto Refresh and Self Refresh. Auto Refresh is similar to the CAS
-before-RAS refresh of conventional DRAMs. All of banks must be precharged before applying any
refresh mode. An on-chip address counter increments the word and the bank addresses and no
bank information is required for both refresh modes.
The chip enters the Auto Refresh mode, when RAS and CAS are held low and CKE and WE are
held high at a clock timing. The mode restores word line after the refresh and no external precharge
command is necessary. A minimum tRC time is required between two automatic refreshes in a burst
refresh mode. The same rule applies to any access command after the automatic refresh operation.
The chip has an on-chip timer and the Self Refresh mode is available. The mode restores the word
lines after RAS, CAS, and CKE are low and WE is high at a clock timing. All of external control
signals including the clock are disabled. Returning CKE to high enables the clock and initiates the
refresh exit operation. After the exit command, at least one tRC delay is required prior to any access
command.
Data Book
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256-MBit Synchronous DRAM
DQM Function
DQM has two functions for data I/O read and write operations. During reads, when it turns to “high”
at a clock timing, data outputs are disabled and become high impedance after two clock delay (DQM
Data Disable Latency tDQZ). It also provides a data mask function for writes. When DQM is activated,
the write operation at the next clock is prohibited (DQM Write Mask Latency tDQW = zero clocks).
Power Down
In order to reduce standby power consumption, a power down mode is available. All banks must be
precharged and the necessary Precharge delay (tRP) must occur before the SDRAM can enter the
Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver
circuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh
operations, therefore the device can’t remain in Power Down mode longer than the Refresh period
(tREF) of the device. Exit from this mode is performed by taking CKE “high”. One clock delay is
required for power down mode entry and two clocks for exit.
Auto Precharge
Two methods are available to precharge SDRAMs. In an automatic precharge mode, the CAS
timing accepts one extra address, CA10, to determine whether the chip restores or not after the
operation. If CA10 is high when a Read Command is issued, the Read with Auto-Precharge
function is initiated. If CA10 is high when a Write Command is issued, the Write with AutoPrecharge function is initiated. The SDRAM automatically enters the precharge operation a time
delay equal to tWR (Write recovery time) after the last data in.
Precharge Command
There is also a separate precharge command available. When RAS and WE are low and CAS is
high at a clock timing, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are
used to define banks as shown in the following list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2, two clocks before the last data out for CAS
latency = 3 and three clocks before the last data out for CAS latency = 4. Writes require a time delay
tWR from the last data out to apply the precharge command.
Data Book
13
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Bank Selection by Address Bits
A10
BA0
BA1
0
0
0
Bank 0
0
0
1
Bank 1
0
1
0
Bank 2
0
1
1
Bank 3
1
x
x
all Banks
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
Data Book
14
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70 °C
Storage Temperature Range .................................................................................. – 55 to + 150 °C
Input/Output Voltage......................................................................................... – 0.3 to VDD + 0.3 V
Power Supply Voltage VDD/VDDQ .............................................................................. – 0.3 to + 4.6 V
Power Dissipation ....................................................................................................................... 1 W
Data out Current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Recommended Operation and DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Unit Notes
Input High Voltage
VIH
2.0
VDD + 0.3
V
1, 2
Input Low Voltage
VIL
– 0.3
0.8
V
1, 2
Output High Voltage (IOUT = – 4.0 mA)
VOH
2.4
–
V
3
Output Low Voltage (IOUT = 4.0 mA)
VOL
–
0.4
V
3
Input Leakage Current, any input
(0 V < VIN < VDDQ , all other inputs = 0 V)
II(L)
–5
5
µA
–
Output Leakage Current
(DQ is disabled, 0 V < VOUT < VDD)
IO(L)
–5
5
µA
–
Notes
1. All voltages are referenced to VSS
2. VIH may overshoot to VDD + 2.0 V for pulse width of < 4 ns with 3.3 V. VIL may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Values
min.
max.
Unit
Input Capacitance (CLK)
CI1
2.5
3.5
pF
Input Capacitance
(A0 - A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
CI2
2.5
3.8
pF
Input/Output Capacitance (DQ)
CIO
4.0
6.0
pF
Data Book
15
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Operating Currents
TA = 0 to 70 °C, VDD = 3.3 V ± 0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb. -7.5
-8/-8A/-8B Unit
Note
max.
ICC1
Operating current
–
tCK = tCK(MIN.)
All banks operated in random access,
all banks operated in ping-pong
manner
x4 260
x8 260
x16 260
200
200
200
mA
mA
mA
3
Precharge standby current
in Power Down Mode
CS = VIH (MIN.), CKE ≤ VIL(MAX.)
tCK = min
ICC2P
2
2
mA
3
Precharge standby current
in Non Power Down Mode
CS = VIH (MIN.), CKE ≥ VIH(MIN.)
tCK = min
ICC2N
35
25
mA
3
No operating current
tCK = min., CS = VIH (MIN.),
active state (max. 4 banks)
CKE ≥ VIH(MIN.)
ICC3N
50
45
mA
3
CKE ≤ VIL(MAX.) ICC3P
10
10
mA
3
100
120
120
mA
mA
mA
3, 4
ICC4
Burst Operating Current
tCK = min
Read command cycling
–
Auto Refresh Current
tCK = min, trc=trcmin.
Auto Refresh command cycling
–
ICC5
270
240
mA
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tck=infinity
standard
version
ICC6
3
3
mA
3
x4 150
x8 170
x16 170
Notes
3. These parameters depend on the cycle rate. All values are measured at 133 MHz operation
frequency for -7.5 devices and at 100 MHz for -8/-8A/-8B devices. Input signals are changed
once during tCK.
3. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the VDDQ current is excluded.
Data Book
16
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
AC Characteristics 1, 2
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symb.
Limit Values
-7.5
PC133-333
min.
-8
PC100-222
max. min.
Unit
-8A
PC100-322
max. min.
Note
-8B
PC100-323
max. min.
max.
Clock and Clock Enable
Clock Cycle Time
CAS Latency = 3 tCK
CAS Latency = 2
–
7.5
10
–
–
8
10
–
–
8
12
–
–
10
15
–
–
ns
ns
Clock frequency
CAS Latency = 3 tCK
CAS Latency = 2
–
–
133
100
–
–
125
100
–
–
125
83
–
–
100
66
MHz
MHz
Access Time from Clock
CAS Latency = 3 tAC
CAS Latency = 2
–
–
5.4
6
–
–
6
6
–
–
6
6
–
–
6
7
ns
ns
2, 3, 6
–
Clock High Pulse Width
tCH
2.5
–
3
–
3
–
3
–
ns
–
Clock Low Pulse Width
tCL
2.5
–
3
–
3
–
3
–
ns
–
Transition Time
tT
0.3
1.2
0.5
10
0.5
10
0.5
10
ns
–
Input Setup Time
tIS
1.5
–
2
–
2
–
2
–
ns
4
Input Hold Time
tIH
0.8
–
1
–
1
–
1
–
ns
4
CKE Setup Time
tCKS
1.5
–
2
–
2
–
2
–
ns
4
CKE Hold Time
tCKH
0.8
–
1
–
1
–
1
–
ns
4
Mode Register Set-up
Time
tRSC
2
–
2
–
2
–
2
–
CLK
–
Power Down Mode Entry
Time
tSB
0
7.5
0
8
0
10
0
10
ns
–
Row to Column Delay
Time
tRCD
20
–
20
–
20
–
20
–
ns
5
Row Precharge Time
tRP
20
–
20
–
20
–
30
–
ns
5
Row Active Time
tRAS
45
100k 48
100k 48
100k 60
100k ns
5
Row Cycle Time
tRC
67
–
70
–
70
–
80
–
ns
5
Activate(a) to Activate(b)
Command Period
tRRD
15
–
16
–
16
–
20
–
ns
5
Setup and Hold Times
Common Parameters
Data Book
17
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
AC Characteristics (cont’d)1, 2
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symb.
Limit Values
-7.5
PC133-333
-8
PC100-222
-8A
PC100-322
Unit
Note
-8B
PC100-323
min.
max. min.
max. min.
max. min.
max.
tCCD
1
–
1
–
1
–
1
–
CLK
–
Refresh Period
(8192 cycles)
tREF
–
64
–
64
–
64
–
64
ms
–
Self Refresh Exit Time
tSREX
1
–
1
–
1
–
1
–
CLK
7
Data Out Hold Time
tOH
3
–
3
–
3
–
3
–
ns
2,6
Data Out to Low
Impedance Time
tLZ
1
–
0
–
0
–
0
–
ns
–
Data Out to High
Impedance Time
tHZ
3
7
3
8
3
8
3
10
ns
–
DQM Data Out Disable
Latency
tDQZ
–
2
–
2
–
2
–
2
CLK
–
Write Recovery Time
tWR
2
–
2
–
2
–
2
–
CLK
–
DQM Write Mask
Latency
tDQW
0
–
0
–
0
–
0
–
CLK
–
CAS(a) to CAS(b)
Command Period
Refresh Cycle
Read Cycle
Write Cycle
Data Book
18
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Notes
1. For proper power-up see the operation section of this data sheet.
2. AC timing tests for LV-TTL versions have VIL = 0.4 V and VIH = 2.4 V with the timing referenced to
the 1.4 V crossover point. The transition time is measured between VIH and VIL . All AC
measurements assume tT = 1 ns with the AC output load circuit shown in figure below. Specified
tAC and tOH parameters are measured with a 50 pF only, without any resistive termination and
with a input signal of 1V / ns edge rate between 0.8 V and 2.0 V.
t CH
2.4 V
0.4 V
CLOCK
t CL
t SETUP
tT
t HOLD
1.4 V
INPUT
t AC
t LZ
t AC
t OH
OUTPUT
1.4 V
I/O
50 pF
t HZ
SPT03404
Measurement conditions for
tAC and tOH
3. If clock rising time is longer than 1 ns, a time (tT/2 − 0.5) ns has to be added to this parameter.
4. If tT is longer than 1 ns, a time (tT − 1) ns has to be added to this parameter.
5. These parameter account for the number of clock cycle and depend on the operating frequency
of the clock, as follows:
the number of clock cycle = specified value of timing period (counted in fractions as a whole
number)
6. Access time from clock tAC is 4.6 ns for PC133 components with no termination and 0 pF load,
Data out hold time tOH is 1.8 ns for PC133 components with no termination and 0 pF load.
7. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after
CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied
once the Self Refresh Exit command is registered.
Data Book
19
1.00
HYB 39S256400/800/160AT
256-MBit Synchronous DRAM
Package Outlines
0.8
15˚±5˚
0.35 +0.1
-0.05
26x 0.8 = 20.8
3)
0.1 54x
0.5 ±0.1
11.76 ±0.2
0.2 M 54x
28
6 max
54
10.16 ±0.13 2)
0.15 +0.06
-0.03
1±0.05
15˚±5˚
0.1±0.05
Plastic Package, P-TSOPII-54
(400 mil, 0.8 mm lead pitch)
Thin Small Outline Package, SMD
1
2.5 max
27
22.22 ±0.13 1)
GPX09039
Index Marking
1)
Does not include plastic or metal protrusion of 0.15 max per side
Does not include plastic protrusion of 0.25 max per side
3)
Does not include dambar protrusion of 0.13 max per side
2)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Data Book
20
Dimensions in mm
1.00
HYB39S256400/800/160AT
256MBit Synchronous DRAM
Timing Diagrams
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. AC- Parameters
9.1 AC Parameters for a Write Timing
9.2 AC Parameters for a Read Timing
9. Mode Register Set
10. Power on Sequence and Auto Refresh (CBR)
11. Self Refresh ( Entry and Exit )
12. Auto Refresh ( CBR )
13. Random Column Read ( Page within same Bank)
15.1 CAS Latency = 2
15.2 CAS Latency = 3
14. Random Column Write ( Page within same Bank)
16.1 CAS Latency = 2
16.2 CAS Latency = 3
15. Random Row Read ( Interleaving Banks) with Precharge
17.1 CAS Latency = 2
17.2 CAS Latency = 3
16. Random Row Write ( Interleaving Banks) with Precharge
18.1 CAS Latency = 2
18.2 CAS Latency = 3
17. Precharge Termination of a Burst
Semiconductor Group
20
HYB39S256400/800/160AT
256MBit Synchronous DRAM
1. Bank Activate Command Cycle
(CAS latency = 3)
T0
T1
T
T
T
T
T
CLK
Address
Bank B
Row Addr.
Bank B
Col. Addr.
t RCD
Command
Bank B
Activate
NOP
Bank B
Row Addr.
Bank A
Row Addr.
t RRD
NOP
Write B
with Auto
Precharge
Bank A
Activate
NOP
Bank B
Activate
t RC
"H" or "L"
SPT03784
2. Burst Read Operation
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
t CK2 , DQ’s
CAS
latency = 3
t CK3 , DQ’s
Semiconductor Group
DOUT A0 DOUT A1 DOUT A2 DOUT A3
DOUT A0 DOUT A1 DOUT A2 DOUT A3
SPT03712
21
HYB39S256400/800/160AT
256MBit Synchronous DRAM
3. Read Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read A
Read B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
t CK2 , DQ’s
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
CAS
latency = 3
t CK3 , DQ’s
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
SPT03713
4. Read to Write Interval
4.1 Read to Write Interval
(Burst Length = 4, CAS latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Minimum delay between the Read and Write
Commands = 4 + 1 = 5 cycles
Write latency t DQW of DQMx
DQMx
t DQZ
Command
NOP
Read A
NOP
NOP
DQ’s
NOP
DOUT A0
NOP
Write B
NOP
NOP
DIN B0
DIN B1
DIN B2
Must be Hi-Z before
the Write Command
"H" or "L"
Semiconductor Group
SPT03787
22
HYB39S256400/800/160AT
256MBit Synchronous DRAM
4 2. Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Write A
NOP
NOP
NOP
DIN A0
DIN A1
DIN A2
DIN A3
CLK
t DQW
DQM
t DQZ
1 Clk Interval
Command
NOP
NOP
Bank A
Activate
NOP
Read A
Must be Hi-Z before
the Write Command
CAS
latency = 2
t CK2 , DQ’s
"H" or "L"
SPT03939
4. 3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
NOP
CLK
t DQW
DQM
t DQZ
Command
NOP
Read A
NOP
NOP
Read A
NOP
Write B
Must be Hi-Z before
the Write Command
CAS
latency = 2
t CK2 , DQ’s
DOUT A0 DOUT A1
DIN B0
DIN B1
DIN B2
CAS
latency = 3
t CK3 , DQ’s
DOUT A0
DIN B0
DIN B1
DIN B2
"H" or "L"
Semiconductor Group
SPT03940
23
HYB39S256400/800/160AT
256MBit Synchronous DRAM
5. Burst Write Operation
(
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Write A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DIN A0
DIN A1
DIN A2
DIN A3
don’t care
CLK
Command
DQ’s
Extra data is ignored after
termination of a Burst.
The first data element and the Write
are registered on the same clock edge.
Semiconductor Group
24
SPT03790
HYB39S256400/800/160AT
256MBit Synchronous DRAM
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
)
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DIN B1
DIN B2
DIN B3
CLK
1 Clk Interval
Command
NOP
Write A
1 Clk Interval
DQ’s
DIN A0
DIN B0
SPT03791
6.2 Write Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Write A
Read B
NOP
NOP
NOP
NOP
NOP
NOP
CLK
Command
CAS
latency = 2
t CK2 , DQ’s
DIN A0
don’t care
CAS
latency = 3
t CK3 , DQ’s
DIN A0
don’t care
DOUT B0 DOUT B1 DOUT B2 DOUT B3
don’t care
Input data for the Write is ignored.
DOUT B0 DOUT B1 DOUT B2 DOUT B3
Input data must be removed from the DQ’s
at least one clock cycle before the Read data
appears on the outputs to avoid data contention.
SPT03719
Semiconductor Group
25
HYB39S256400/800/160AT
256MBit Synchronous DRAM
7. Burst Write and Read with Auto Precharge
7.1 Burst Write with Auto-Precharge
)
(Burst Length = 2, CAS latency = 2,3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
BANK A
ACTIVE
COMMAND
NOP
NOP
WRITE A
Auto-Precharge
NOP
NOP
tWR
CAS latency = 2
DIN A0
DQ’s
CAS latency = 3
DIN A0
NOP
NOP
tRP
*
DIN A1
NOP
tRP
tWR
DIN A1
*
DQ’s
*
Begin Autoprecharge
Bank can be reactivated after trp
7.2 Burst Read with Auto-Precharge
(Burst Length = 4, CAS latency = 2,3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND
READ A
with AP
CAS latency = 2
tCK2, DQ’s
CAS latency = 3
tCK3, DQ’s
NOP
NOP
DOUT A0
NOP
DOUT A1
DOUT A0
NOP
DOUT A2
DOUT A1
NOP
NOP
NOP
NOP
tRP
*
DOUT A3
*
tRP
DOUT A2
DOUT A3
*
Begin Autoprecharge
Bank can be reactivated after trp
Semiconductor Group
26
HYB39S256400/800/160AT
256MBit Synchronous DRAM
8. AC Parameters
8.1 AC Parameters for a Write Timing
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CH
t CK2
t CL
CKE
t CKS
t CH
t CKH
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
t CS
CS
RAS
CAS
WE
BS
tAH
AP
RBx
RAx
RAy
RAz
RBy
RAz
RBy
t AS
Addr.
RAx
CAx
RBx
RAy
CBx
RAy
DQM
t WR
t RCD
t DS
t RP
t DH
t RC
Hi-Z
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3
DQ
Activate
Command
Bank A
Activate
Command
Bank B
Write with
Auto Precharge
Command
Bank A
Semiconductor Group
t RP
t RRD
Ay0 Ay1 Ay2 Ay3
Activate
Write
Command Command
Bank A
Bank A
Write with
Auto Precharge
Command
Bank B
t WR
Precharge Activate
Activate
Command Command Command
Bank A
Bank A
Bank B
SPT03910_2
27
HYB39S256400/800/160AT
256MBit Synchronous DRAM
8.2 AC Parameters for a Read Timing
Burst Length = 2, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
t CH
t CK2
t CL
CKE
t CKH
t CS
Begin Auto
Precharge
Bank A
t CKS
t CH
Begin Auto
Precharge
Bank B
CS
RAS
CAS
WE
BS
t AH
AP
RAx
RBx
RAy
t AS
Addr.
RAx
CAx
RBx
RAy
RBx
t RRD
t RAS
t RC
DQM
t AC2
t LZ
t RCD
DQ
t OH
Hi-Z
Read with
Auto Precharge
Command
Bank A
Activate
Command
Bank B
28
t RP
t AC2
Ax0
Activate
Command
Bank A
Semiconductor Group
t HZ
t HZ
Ax1
Read with
Auto Precharge
Command
Bank B
Bx0
Precharge
Command
Bank A
Bx1
Activate
Command
Bank A
SPT03911
HYB39S256400/800/160AT
256MBit Synchronous DRAM
9. Mode Register Set
CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t RSC
CS
RAS
CAS
WE
BS0, BS1
A10, A11
Address Key
A0-A9
Precharge
Command
All Banks
Any
Command
Mode Register
Set Command
Semiconductor Group
SPT03912
29
HYB39S256400/800/160AT
256MBit Synchronous DRAM
10. Power on Sequence and Auto Refresh (CBR)
T2
T3
T4
CKE
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
~
~
~
~
~
~
CLK
T1
~
~
T0
2 Clock min.
Minimum of 8 Refresh Cycles are required
~
~
~
~
High Level
is required
~
~ ~
~
~
~
~ ~
~
~
AP
~
~ ~
~
BS
~
~
~
~ ~
~
WE
~ ~
~
~
~
~ ~
~
CAS
~
~ ~
~
~
~ ~
~
RAS
~
~
~
~
CS
~ ~
~
~
~
~ ~
~
Addr.
~
~
~
~
Address Key
DQM
t RC
~
~
DQ
~
~
t RP
Hi-Z
8th Auto Refresh
Command
Precharge
Command
All Banks
Inputs must be
stable for 200 µs
Semiconductor Group
1st Auto Refresh
Command
Mode Register
Set Command
Any
Command
SPT03913
30
HYB39S256400/800/160AT
256MBit Synchronous DRAM
11. Self Refresh (Entry and Exit)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
~
~
CLK
~
~
CKE
~
~
t CKS
t CKS
~
~
~
~
CS
~
~
~
~
RAS
~
~
CAS
~
~
~
~
~
~
WE
~
~
BS
~ ~
~
~
AP
~
~
~
~
~
~
Addr.
t SREX
t RC*)
~
~
DQM
Hi-Z
~
~
DQ
All Banks
must be idle
Self Refresh
Entry
Begin Self Refresh
Exit Command
Self Refresh Exit
Command issued
Self Refresh
Exit
Any
Command
*) minimum RAS cycle
time depends on CAS
Latency and trc
Semiconductor Group
31
SPT03919-2
HYB39S256400/800/160AT
256MBit Synchronous DRAM
12. Auto Refresh (CBR)
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
t RC
t RP
DQM
CAx
t RC
(Minimum Interval)
Hi-Z
Ax0 Ax1 Ax2 Ax3
DQ
Precharge Auto Refresh
Command Command
All Banks
Auto Refresh
Command
Activate
Read
Command Command
Bank A
Bank A
SPT03920_2
Semiconductor Group
32
HYB39S256400/800/160AT
256MBit Synchronous DRAM
13. Random Column Read (Page within same Bank)
13.1 CAS Latency = 2
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RAw
Addr.
RAw
RAz
CAw
CAx
CAy
RAz
CAz
DQM
DQ
Hi Z
Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3
Activate
Command
Bank A
Semiconductor Group
Read
Command
Bank A
Read
Command
Bank A
Read
Command
Bank A
33
Precharge
Command
Bank A
Activate
Command
Bank A
Az0 Az1 Az2 Az3
Read
Command
Bank A
SPT03921
HYB39S256400/800/160AT
256MBit Synchronous DRAM
13.2 CAS Latency = 3
Burst Length = 4, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
CS
RAS
CAS
WE
BS
AP
RAw
Addr.
RAw
RAz
CAw
CAx
CAy
RAz
CAz
DQM
DQ
Hi Z
Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3
Activate
Command
Bank A
Semiconductor Group
Read
Command
Bank A
Read
Command
Bank A
Read
Command
Bank A
34
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A SPT03922
HYB39S256400/800/160AT
256MBit Synchronous DRAM
14. Random Column write (Page within same Bank)
14.1 CAS Latency = 2
Burst Length = 4, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
CS
RAS
CAS
WE
BS
AP
RBw
Addr.
RBw
RBz
CBx
CBy
DBw0 DBw1 DBw2 DBw3 DBx0
DBx1 DBy0
CBw
RBz
CBz
DQM
Hi Z
DQ
Activate
Write
Command Command
Bank B
Bank B
DBy1 DBy2
Write
Write
Command Command
Bank B
Bank B
DBy3
DBz0
DBz1 DBz2
DBz3
Precharge Activate
Read
Command Command Command
Bank B
Bank B
Bank B
SPT03923_2
Semiconductor Group
35
HYB39S256400/800/160AT
256MBit Synchronous DRAM
14.2. CAS Latency = 3
Burst Length = 4, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
CS
RAS
CAS
WE
BS
AP
RBz
Addr.
RBz
RBz
CBz
CBx
CBy
RBz
CBz
DQM
DQ
Hi Z
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
Activate
Command
Bank B
Semiconductor Group
Write
Command
Bank B
Write
Command
Bank B
Write
Command
Bank B
36
DBz0 DBz1
Precharge
Command
Bank B
Activate
Command
Bank B
Write
Command
Bank B SPT03924
HYB39S256400/800/160AT
256MBit Synchronous DRAM
15. Random Row Read (Interleaving Banks) with Precharge
15.1 CAS Latency = 2
Burst Length = 8, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
High
CS
RAS
CAS
WE
BS
AP
RBx
Addr.
RBx
RBy
RAx
CBx
RAx
CAx
RBy
t RCD
CBy
t RP
DQM
t AC2
Hi-Z
DQ
Read
Activate
Command Command
Bank B
Bank B
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7
Precharge Activate
Command Command
Bank B
Bank B
Activate
Command
Bank A
Read
Command
Bank A
Semiconductor Group
37
By0 By1
Read
Command
Bank B
SPT03925_2
HYB39S256400/800/160AT
256MBit Synchronous DRAM
15.2 CAS Latency = 3
Burst Length = 8, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
High
CS
RAS
CAS
WE
BS
AP
RBx
Addr.
RBx
RAx
CBx
RBy
RAx
CAx
RBy
t AC3
t RCD
CBy
t RP
DQM
DQ
Hi-Z
Activate
Command
Bank B
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7 By0
Read
Command
Bank B
Activate
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank B
Activate
Command
Bank B
Read
Command
Bank B
Precharge
Command
Bank A
SPT03926
Semiconductor Group
38
HYB39S256400/800/160AT
256MBit Synchronous DRAM
16. Random Row Write (Interleaving Banks) with Precharge
16.1 CAS Latency = 2
Burst Length = 8, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
High
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
RBx
CAx
RAy
RBx
CBx
t RCD
RAy
t WR
CAy
t WR
t RP
DQM
Hi-Z
DQ
DAx0
DAx1 DAx2
Activate
Write
Command Command
Bank A
Bank A
DAx3
DAx4 DAx5 DAx6
DAx7
DBx0
DBx1 DBx2 DBx3
Activate
Write
Command Command
Bank B
Bank B
Precharge
Command
Bank A
Semiconductor Group
39
DBx4
Activate
Command
Bank A
DBx5 DBx6
DBx7 DAy0
DAy1 DAy2
DAy3
DAy4
Precharge
Command
Bank B
Write
Command
Bank A
SPT03927_2
HYB39S256400/800/160AT
256MBit Synchronous DRAM
16.2 CAS Latency = 3
Burst Length = 8, CAS Latency = 3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE
High
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
RAy
RBx
CAx
RBx
CBx
t RCD
RAy
t WR
t RP
CAy
t WR
DQM
DQ
Hi-Z
Activate
Command
Bank A
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3
Write
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank B
SPT03928
Semiconductor Group
40
HYB39S256400/800/160AT
256MBit Synchronous DRAM
17. Precharge termination of a Burst
Burst Length = 8 or Full Page, CAS Latency = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
T9
CLK
t CK2
CKE
High
CS
RAS
CAS
WE
BS
AP
RAx
Addr.
RAx
RAz
RAy
CAx
RAy
CAy
t RP
RAz
CAz
t RP
t RP
Ay0 Ay1 Ay2
Az0 Az1 Az2
DQM
DQ
Hi Z
Activate
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
Command
Bank A
Precharge Termination
of a Write Burst.
Write Data is masked.
Precharge
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank A
Precharge
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank A
Precharge
Command
Bank A
Precharge Termination
of a Read Burst.
SPT03933
Semiconductor Group
41