HZM6.2ZMWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1514 (Z) Rev.0 May. 2002 Features • HZM6.2ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HZM6.2ZMWA 62N MPAK Pin Arrangement 3 2 1 (Top View) 1. Cathode 2. Cathode 3. Anode HZM6.2ZMWA Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note: Two device total, See Fig.2. Electrical Characteristics*1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 8.5 pF VR = 0 V, f = 1 MHz rd — — 60 Ω IZ = 5 mA — 13 — — kV C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Dynamic resistance ESD-Capability * 2 Notes: 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5 V. Rev.0,May. 2002, page 2 of 6 HZM6.2ZMWA Main Characteristics 10–2 250 Power Dissipation Pd (mW) 0.8mm 1.0mm 10–4 10–5 10–6 0 2 4 6 8 200 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 150 100 50 0 10 Cu Foil 0 50 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (°C) Fig.1 Zener current vs. Zener voltage Fig.2 Power Dissipation vs. Ambient Temperature Nonrepetitive Surge Reverses Power PRSM (W) Zener Current IZ (A) 10–3 104 PRSM t 3 10 Ta = 25°C nonrepetitive 102 10 1.0 10–5 10–4 10–3 10–2 10–1 1.0 Time t (s) Fig.3 Surge Reverse Power Ratings Rev.0, May. 2002, page 3 of 6 HZM6.2ZMWA Main Characteristics (cont) Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10–2 10–1 1.0 10 Time t (s) Fig.4 Transient Thermal Impedance * Note: Measurement value by forward bias. Rev.0,May. 2002, page 4 of 6 102 103 HZM6.2ZMWA Package Dimensions As of January, 2002 2.8 + 0.2 – 0.6 1.5 ± 0.15 0.3 2.8 +– 0.1 (0.65) 1.9 ± 0.2 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 + 0.2 1.1 – 0.1 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) MPAK — Conforms 0.011 g Rev.0, May. 2002, page 5 of 6 HZM6.2ZMWA Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.0,May. 2002, page 6 of 6