HZM3.3WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1458A (Z) Rev.1 Nov. 2002 Features • HZM3.3WA has two devices, and can absorb surge. • MPAK Package is suitable for high density surface mounting. Ordering Information Type No. Laser Mark Package Code HZM3.3WA 33A MPAK Pin Arrangement 3 2 1 (Top View) 1. Cathode 2. Cathode 3. Anode HZM3.3WA Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit 200 mW Power dissipation Pd * Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note 1. Two device total, See Fig.2. Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 3.10 — 3.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 20 µA VR = 1.0 V Dynamic resistance rd — — 130 Ω IZ = 5 mA — 30 — — kV C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse ESD-Capability * 2 Notes: 1. Per one device. 2. Failure criterion ; IR > 20 µA at VR = 1.0 V. Rev.1, Nov. 2002, page 2 of 6 HZM3.3WA Main Characteristic 250 10 Power Dissipation Pd (mW) 6 4 2 0 0 1 2 3 4 200 Cu Foil Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 150 100 50 0 50 0 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (˚C) Fig.1 Zener current vs. Zener voltage Fig.2 Power Dissipation vs. Ambient Temperature Nonrepetitive Surge Reverses Power PRSM (W) Zener Current IZ (mA) 8 0.8mm 1.0mm 104 PRSM t 10 3 Ta = 25°C nonrepetitive 102 10 1.0 10–5 10–4 10–3 Time t (s) 10–2 10–1 1.0 Fig.3 Surge Reverse Power Ratings Rev.1, Nov. 2002, page 3 of 6 HZM3.3WA Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10-2 10-1 1.0 Time t (s) 10 Fig.4 Transient Thermal Impedance Rev.1, Nov. 2002, page 4 of 6 102 103 HZM3.3WA Package Dimensions As of July, 2002 2.8 + 0.2 – 0.6 1.5 ± 0.15 0.3 2.8 +– 0.1 (0.65) 1.9 ± 0.2 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 + 0.2 1.1 – 0.1 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) MPAK — Conforms 0.011 g Rev.1, Nov. 2002, page 5 of 6 HZM3.3WA Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.1, Nov. 2002, page 6 of 6