HZS-N Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply ADE-208-124 (Z) Rev. 0 Aug. 1993 Features • Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. Mark Package Code HZS-N Series Type No. MHD Outline 7.5 B 2 1 2 Type No. Cathode band 1. Cathode 2. Anode HZS-N Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg –55 to +175 °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V) * Reverse Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS2.0N B1 1.88 2.10 5 120 0.5 100 5 B2 2.02 2.20 B1 2.12 2.30 5 120 0.7 100 5 B2 2.22 2.41 B1 2.33 2.52 5 120 1.0 100 5 B2 2.43 2.63 B1 2.54 2.75 5 100 1.0 110 5 B2 2.69 2.91 B1 2.85 3.07 5 50 1.0 120 5 B2 3.01 3.22 B1 3.16 3.38 5 20 1.0 120 5 B2 3.32 3.53 B1 3.47 3.68 5 10 1.0 120 5 B2 3.62 3.83 B1 3.77 3.98 5 5 1.0 120 5 B2 3.92 4.14 B1 4.05 4.26 5 5 1.0 120 5 B2 4.20 4.40 B3 4.34 4.53 HZS2.2N HZS2.4N HZS2.7N HZS3.0N HZS3.3N HZS3.6N HZS3.9N HZS4.3N Note: Tested with pulse (PW = 40ms) Rev.0, Aug. 1993, page 2 of 9 HZS-N Series Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage VZ (V) * Reverse Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS4.7N B1 4.47 4.65 5 5 1.0 100 5 B2 4.59 4.77 B3 4.71 4.91 B1 4.85 5.03 5 5 1.5 70 5 B2 4.97 5.18 B3 5.12 5.35 B1 5.29 5.52 5 5 2.5 40 5 B2 5.46 5.70 B3 5.64 5.88 B1 5.81 6.06 5 5 3.0 30 5 B2 5.99 6.24 B3 6.16 6.40 B1 6.32 6.59 5 2 3.5 25 5 B2 6.52 6.79 B3 6.70 6.97 B1 6.88 7.19 5 0.5 4.0 25 5 B2 7.11 7.41 B3 7.33 7.64 B1 7.56 7.90 5 0.5 5.0 20 5 B2 7.82 8.15 B3 8.07 8.41 5 0.5 6.0 20 5 5 0.2 7.0 20 5 HZS5.1N HZS5.6N HZS6.2N HZS6.8N HZS7.5N HZS8.2N HZS9.1N HZS10N B1 8.33 8.70 B2 8.61 8.99 B3 8.89 9.29 B1 9.19 9.59 B2 9.48 9.90 B3 9.82 10.30 Note: Tested with pulse (PW = 40ms) Rev.0, Aug. 1993, page 3 of 9 HZS-N Series Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage VZ (V) * Reverse Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS11N B1 10.18 10.63 5 0.2 8.0 20 5 B2 10.50 10.95 B3 10.82 11.26 B1 11.13 11.63 5 0.2 9.0 25 5 B2 11.50 11.92 B3 11.80 12.30 B1 12.18 12.71 5 0.2 10 25 5 B2 12.59 13.16 B3 13.03 13.62 B1 13.48 14.09 5 0.2 11 25 5 B2 13.95 14.56 B3 14.42 15.02 B1 14.87 15.50 5 0.2 12 25 5 B2 15.33 15.96 B3 15.79 16.50 B1 16.34 17.06 5 0.2 13 30 5 B2 16.90 17.67 B3 17.51 18.30 B1 18.14 18.96 5 0.2 15 30 5 B2 18.80 19.68 B3 19.52 20.45 5 0.2 17 30 5 HZS12N HZS13N HZS15N HZS16N HZS18N HZS20N HZS22N B1 20.23 21.08 B2 20.76 21.65 B3 21.22 22.09 B4 21.68 22.61 Note: Tested with pulse (PW = 40ms) Rev.0, Aug. 1993, page 4 of 9 HZS-N Series Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage VZ (V) * Reverse Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZS24N B1 22.26 23.12 5 0.2 19 35 5 B2 22.75 23.73 B3 23.29 24.27 B4 23.81 24.81 B1 24.26 25.52 5 0.2 21 45 5 B2 24.97 26.26 B3 25.63 26.95 B4 26.29 27.64 B1 26.99 28.39 5 0.2 23 55 5 B2 27.70 29.13 B3 28.36 29.82 B4 29.02 30.51 B1 29.68 31.22 5 0.2 25 65 5 B2 30.32 31.88 B3 30.90 32.50 B4 31.49 33.11 B1 32.14 33.79 5 0.2 27 75 5 B2 32.79 34.49 B3 33.40 35.13 B4 34.01 35.77 B1 34.68 36.47 5 0.2 30 85 5 B2 35.36 37.19 B3 36.00 37.85 B4 36.63 38.52 HZS27N HZS30N HZS33N HZS36N HZS39N Note: Tested with pulse (PW = 40ms) Type No. is as follows: HZS2.0NB1, HZS2.0NB2, ••• HZS39NB4. Rev.0, Aug. 1993, page 5 of 9 HZS16N HZS2.4N HZS3.0N HZS3.6N HZS4.3N HZS5.1N HZS6.2N HZS7.5N HZS8.2N HZS9.1N HZS10N HZS11N HZS12N HZS-N Series HZS39N HZS36N HZS33N HZS30N HZS27N HZS24N HZS22N HZS20N HZS18N HZS13N HZS15N 6 HZS6.8N Zener Current I HZS2.0N 8 Z (mA) 10 4 2 0 4 12 8 16 20 24 Zener Voltage VZ 28 32 (V) Fig.1 Zener current Vs. Zener voltage Zener Voltage Temperature Coefficient γ z (%/°C) 0.08 40 %/°C 0.06 30 20 0.04 mV/°C 10 0.02 0 0 −0.02 −10 −0.04 −20 −0.06 −30 −0.08 −40 −0.10 0 5 Zener Voltage Temperature Coefficient γ z (mV/°C) 50 0.10 −50 10 15 20 25 30 35 40 Zener Voltage VZ (V) Fig.2 Temperature Coefficient Vs. Zener voltage Rev.0, Aug. 1993, page 6 of 9 36 40 HZS-N Series 500 l 2.5mm 3mm Power Dissipation Pd (mW) 400 Printed circuit board 100 × 180 × 1.6t mm Material: paper phenol 300 l = 5mm 200 l = 10mm (Publication value) 100 0 0 50 100 150 Ambient Temperature Ta (°C) 200 Fig.3 Power Dissipation Vs. Ambient Temperature Rev.0, Aug. 1993, page 7 of 9 HZS-N Series Package Dimensions 26.0 Min B 7.5 2 1 φ 0.4 7.5 2.4 Max B 26.0 Min φ 2.0 Max Unit: mm 2 Type No. (Black) Cathode band (Black) Abbreviation of type name Type name without HZS ••• N. Zener voltage classification symbol equal to B1 or B3. 2 Expanded drawing of marking 1 Cathode 2 Anode HITACHI Code MHD JEDEC Code DO-34 EIAJ Code Weight (g) Rev.0, Aug. 1993, page 8 of 9 0.084 HZS-N Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.0, Aug. 1993, page 9 of 9