IXYS IBB110PTR

IBB110P
Integrated Telecom Circuits
INTEGRATED CIRCUITS DIVISION
Parameter
Blocking Voltage
Load Current
On-Resistance (max)
Rating
350
100
35
Units
VP
mArms / mADC

Features
• 3750Vrms Input/Output Isolation
• Three Functions in One Package
• Bidirectional Current Sensing
• Bidirectional Current Switching
• FCC Compatible
• No EMI/RFI Generation
• Small 16-Pin SOIC Package (PCMCIA Compatible)
• Machine Insertable, Wave Solderable
• Tape & Reel Versions Available
Applications
• Telecommunications
• Telecom Switching
• Tip/Ring Circuits
• Modem Switching (Laptop, Notebook,
Pocket Size)
• Hook Switch
• Dial Pulsing
• Ground Start
• Ringing Injection
• Instrumentation
• Multiplexers
• Data Acquisition
• Electronic Switching
• I/O Subsystems
• Meters (Watt-Hour, Water, Gas)
• Medical Equipment-Patient/Equipment Isolation
• Security
• Aerospace
• Industrial Controls
Description
The IBB110P Multifunction Telecom switch combines
two 350V normally closed (1-Form-B) relays and one
optocoupler in a single package. The relays use
optically coupled MOSFET technology to provide
1500Vrms of input to output isolation. The efficient
MOSFET switches and photovoltaic die use IXYS
Integrated Circuits Division’s patented OptoMOS
architecture, while the optically coupled output is
controlled by highly efficient GaAIAs infrared LEDs.
Circuit designers using the IBB110P can combine
three discrete functions in a single package, thus
using less space than traditional discrete component
solutions.
Approvals
• UL Recognized Component: File E76270
• CSA Certified Component: Certificate 1305490
• EN/IEC 60950-1 Certified Component:
TUV Certificate: B 09 07 49410 006
Ordering Information
Part #
IBB110P
IBB110PTR
Description
16-Pin SOIC (50/Tube)
16-Pin SOIC (1000/Reel)
Pin Configuration
(N/C)
(N/C)
1
16
2
15 (Form B)
3
14
4
13
5
12 (Form B)
6
11
7
10
8
9
1. (N/C)
2. + LED - Form B Relay #1
3. – LED - Form B Relay #1
4. + LED - Form B Relay #2
5. – LED - Form B Relay #2
6. Emitter - Phototransistor
7. Collector - Phototransistor
8. (N/C)
9. LED - Phototransistor +/–
10. LED - Phototransistor –/+
11. Output - Form B Relay #2
12. Common Source Relay #2
13. Output - Form B Relay #2
14. Output - Form B Relay #1
15. Common Source Relay #1
16. Output - Form B Relay #1
Switching Characteristics of
Normally Closed Devices
Form-B
IF
ILOAD
Pb
DS-IBB110P-R04
90%
10%
e3
toff
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1
INTEGRATED CIRCUITS DIVISION
IBB110P
Absolute Maximum Ratings @ 25ºC
Parameter
Input Control Current, Relay
Total Package Dissipation 1
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
1
Ratings
50
1
3750
-40 to +85
-40 to +125
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Units
mA
W
Vrms
°C
°C
Derate linearly 1.67 mW / ºC
Electrical Characteristics @25ºC: Relay Section
Parameter
Output Characteristics
Blocking Voltage (Peak)
Load Current
Continuous
Peak
On-Resistance
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Input Characteristics
Input Control Current to Activate
Input Control Current to Deactivate
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
Conditions
Symbol
Min
Typ
Max
Units
-
VL
-
-
350
VP
t=10ms
IL=100mA
VL=350V, TJ=25ºC
IL
ILPK
RON
ILEAK
-
-
100
350
35
1
mArms / mADC
mAP

VL=50V, f=1MHz
ton
toff
COUT
-
25
3
3
-
ms
ms
pF
IL=100mA
IL=1mA
IF=5mA
VR=5V
IF
IF
VF
VR
IR
0.4
0.9
-
1.2
-
5
1.4
5
10
mA
mA
V
V
A
IF=5mA, VL=10V
A
Electrical Characteristics @25ºC: Detector Section
Parameter
Output Characteristics
Phototransistor Blocking Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Input Characteristics
Input Control Current
Input Voltage Drop
Input Current (Detector Must be Off)
Capacitance, Input to Output
Isolation, Input to Output
2
Conditions
Symbol
Min
Typ
Max
Units
IC=10A
VCE=5V, IF=0mA
IC=2mA, IF=16mA
IF=6mA, VCE=0.5V
BVCEO
ICEO
VSAT
CTR
20
33
50
50
0.3
-
500
0.5
-
V
nA
V
%
IC=2mA, VCE=0.5V
IF=5mA
IC=1A, VCE=5V
VL=50V, f=1MHz
-
IF
VF
CI/O
VI/O
0.9
5
3750
2
1.2
25
3
-
6
1.4
-
mA
V
A
pF
Vrms
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INTEGRATED CIRCUITS DIVISION
IBB110P
RELAY PERFORMANCE DATA*
25
Device Count (N)
Device Count (N)
30
25
20
15
10
Typical Turn-On Time
(N=50, IF=5mA, IL=100mA, TA=25ºC)
25
20
Device Count (N)
35
Typical LED Forward Voltage Drop
(N=50, IF=5mA, TA=25ºC)
15
10
5
5
0
0
1.19
1.21
1.23
20
15
10
5
0
0.09
1.25
0.27
0.45
0.63
0.81
0.99
1.17
0.27
0.45
0.63
0.81
0.99
1.17
1.35
LED Forward Voltage Drop (V)
Turn-On Time (ms)
Turn-Off Time (ms)
Typical IF for Switch Operation
(N=50, IL=100mADC, TA=25ºC)
Typical IF for Switch Dropout
(N=50, IL=100mADC, TA=25ºC)
Typical On-Resistance Distribution
(N=50, IF=5mA, IL=100mADC, TA=25ºC)
25
25
20
20
20
15
10
5
Device Count (N)
25
Device Count (N)
Device Count (N)
1.17
Typical Turn-Off Time
(N=50, IF=5mA, IL=100mADC, TA=25ºC)
15
10
5
0
0
0.33
0.55
0.77
0.99
1.21
1.43
15
10
5
0
0.11
1.65
0.33
0.55
0.77
0.99
1.21
1.43
25.5
26.5
LED Current (mA)
LED Current (mA)
Device Count (N)
25
27.5
28.5
29.5
30.5
31.5
On-Resistance (:)
Typical Blocking Voltage Distribution
(N=50, TA=25ºC)
20
15
10
5
0
357.5 372.5 387.5 402.5 417.5 432.5 443.5
Blocking Voltage (VP)
Typical Turn-On Time
vs. LED Forward Current
(IL=100mADC)
0.30
1.6
0.25
1.4
IF=50mA
IF=30mA
IF=20mA
IF=10mA
IF=5mA
1.2
1.0
-40
-20
0
20
40
60
Temperature (ºC)
80
100
0.6
0.20
0.15
0.10
0.05
0.8
120
0
Typical Turn-Off Time
vs. LED Forward Current
(IL=100mADC)
0.7
Turn-Off Time (ms)
1.8
Turn-On Time (ms)
LED Forward Voltage Drop (V)
Typical LED Forward Voltage Drop
vs. Temperature
0.5
0.4
0.3
0.2
0.1
0
0
5
10
15
20
25
30
35
40
LED Forward Current (mA)
45
50
0
5
10
15
20
25
30
35
40
45
50
LED Forward Current (mA)
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
R04
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3
INTEGRATED CIRCUITS DIVISION
IBB110P
RELAY PERFORMANCE DATA (cont.)*
0.9
0.8
0.5
Turn-Off Time (ms)
0.4
0.3
0.2
0.1
IF=10mA
0.5
0.4
0.3
IF=20mA
0.2
140
120
100
80
60
40
20
0
-40
3.0
-20
0
20
40
60
80
0
-40
100
-20
0
20
40
60
80
100
-40
20
40
60
80
Temperature (ºC)
Typical IF for Switch Operation
vs. Temperature
(IL=100mADC)
Typical IF for Switch Dropout
vs. Temperature
(IL=100mADC)
Typical On-Resistance
vs. Temperature
(IF=5mA, IL=100mADC)
3.0
60
1.5
1.0
2.0
1.5
1.0
0.5
0.5
0
0
-20
0
20
40
60
80
On-Resistance (:)
LED Current (mA)
2.0
120
80
100
50
40
30
20
0
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
Temperature (ºC)
Temperature (ºC)
Temperature (ºC)
Typical Load Current
vs. Load Voltage
(IF=5mA, TA=25ºC)
Typical Blocking Voltage
vs. Temperature
Typical Leakage vs. Temperature
Measured Across Pins 14&16 or 11&13)
Blocking Voltage (VP)
410
0.045
0.040
405
0.035
400
395
390
-3
-2
-1
0
1
2
3
4
-20
0
20
40
60
80
100
Temperature (ºC)
Load Voltage (V)
0.025
0.020
0.015
0.005
-40
5
0.030
0.010
385
380
-4
100
10
-40
100
100
80
60
40
20
0
-20
-40
-60
-80
-100
-5
0
Temperature (ºC)
2.5
-40
-20
Temperature (ºC)
2.5
LED Current (mA)
0.6
0.1
0
Load Current (mA)
160
IF=5mA
0.7
Maximum Load Current
vs. Temperature
(IF=5mA)
180
Leakage (PA)
Turn-On Time (ms)
0.6
Typical Turn-Off Time
vs. Temperature
(IL=100mADC)
Load Current (mA)
Typical Turn-On Time
vs. Temperature
(IF=5mA, IL=100mADC)
0
-40
-20
0
20
40
60
80
100
Temperature (ºC)
Load Current (A)
Energy Rating Curve
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10Ps 100Ps 1ms 10ms 100ms
1s
10s
100s
Time
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
4
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R04
INTEGRATED CIRCUITS DIVISION
IBB110P
DETECTOR PERFORMANCE DATA*
7
3.5
3.0
2.5
2.0
1.5
1.0
12
6
5
4
IF=1mA
IF=2mA
IF=5mA
IF=10mA
IF=15mA
IF=20mA
3
2
1
0.5
0
2
4
6
8
10
12
14
Forward Current (mA)
16
18
20
0
-40
-20
0
20
40
60
80
Temperature (ºC)
100
120
Collector Current (mA)
8
4.0
Normalized CTR (%)
Normalized CTR (%)
4.5
0
Typical Collector Current
vs. Forward Current
(VCE=0.5V)
Typical Normalized CTR
vs. Temperature
(VCE=0.5V)
Typical Normalized CTR
vs. Forward Current
(VCE=0.5V)
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
Forward Current (mA)
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
R04
www.ixysic.com
5
INTEGRATED CIRCUITS DIVISION
IBB110P
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
IBB110P
MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
Maximum Temperature x Time
IBB110P
260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable. Since IXYS Integrated Circuits Division employs the use of silicone coating as an
optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a
wash is used after solder reflow processes. Chlorine- or Fluorine-based solvents or fluxes should not be used.
Cleaning methods that employ ultrasonic energy should not be used.
Pb
6
e3
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R04
INTEGRATED CIRCUITS DIVISION
IBB110P
MECHANICAL DIMENSIONS
IBB110P
10.160±0.381
(0.400±0.015)
PCB Land Pattern
0.254 ±0.0127
(0.010±0.0005)
PIN 16
10.363±0.127
(0.408±0.005)
7.493±0.127
(0.295±0.005)
0.635 X 45°
(0.025 X 45°)
1.016 TYP
(0.040 TYP)
9.30
(0.366)
1.90
(0.075)
PIN 1
1.270 TYP
(0.050 TYP)
1.27
(0.050)
2.108 MAX
(0.083 MAX)
See Note 3
0.406 TYP
(0.016 TYP)
8.890 TYP
(0.350 TYP)
0.508±0.1016
(0.020±0.004)
0.60
(0.024)
Lead to Package Standoff:
MIN: 0.0254 (0.001)
MAX: 0.102 (0.004)
DIMENSIONS
mm
(inches)
NOTES:
1. Coplanarity = 0.1016 (0.004) max.
2. Leadframe thickness does not include solder plating
(1000 microinch maximum).
3. Sum of package height, standoff, and coplanarity
does not exceed 2.108 (0.083).
IBB110PTR Tape & Reel
330.2 DIA.
(13.00 DIA.)
W=16
(0.630)
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
B0=10.70
(0.421)
K0=3.20
(0.126)
A0=10.90
(0.429)
P=12.00
(0.472)
K1=2.70
(0.106)
Embossed Carrier
Embossment
NOTES:
1. All dimensions carry tolerances of EIA Standard 481-2
2. The tape complies with all “Notes” for constant dimensions
listed on page 5 of EIA-481-2
Dimensions
mm
(inches)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to
its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
7
Specification: DS-IBB110P-R04
©Copyright 2012, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
12/19/2012