Preliminary Data Sheet ICE60N199 Product Summary ICE60N199 N-Channel Enhancement Mode MOSFET HALOGEN Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies FREE ID TA=25oC 20A Max V(BR)DSS ID=250uA 600V Min rDS(on) VGS=10V 0.17Ω Typ Qg VDS=480V 62nC Typ D G S T0220 Standard Metal Heatsink ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b 1=Gate, 2=Drain, 3=Source. , at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID Tc=25oC 20 A Pulsed drain current ID, pulse Tc=25oC 60 A Avalanche energy, single pulse E AS ID=10A 520 mJ Avalanche current, repetitive I AR limited by Tjmax 10 A MOSFET dv/dt ruggedness dv/dt VDS=480V, ID=20A, Tj=125oC 50.0 V/ns Gate source voltage VGS Static ±20 AC (f>1Hz), VGS=30V ±30 Tc=25oC 180 Power dissipation Ptot Operating and storage temperature Tj, Tstg Mounting torque -55 to +150 M 3 & 3.5 screws 60 V W o C Ncm a When mounted on 1inch square 2oz copper clad FR-4 b Preliminary Data Sheet – Specifications subject to change SP-60N199-000-0 09/26/2013 1 Preliminary Data Sheet ICE60N199 Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Symbol Conditions RthJC Values Min Typ Max - - Unit 0.7 o C/W RthJA Soldering temperature, wave T sold soldering only allowed at leads leaded - - 62 1.6mm (0.063in.) from case for 10 s - - 260 o C Electrical characteristics b , at Tj=25oC, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V(BR)DSS VGS=0 V, ID=250µA 600 640 - VGS(th) VDS=VGS, ID=250µA VDS=600V, VGS=0V, o Tj=25 C 2.1 3 3.9 - 0.1 1 Zero gate voltage drain current IDSS Gate source leakage current IGSS Drain-source on-state resistance RDS (on) Gate resistance RG VDS=600V, VGS=0V, o Tj=150 C V µA - - 100 VGS=±20 V, VDS=0V VGS=10V, ID=10A, o Tj=25 C VGS=10V, ID=10A, o Tj=150 C - - 100 - 0.17 0.199 - 0.52 - f=1 MHZ, open drain - 4.3 - - 2020 980 9 19 39 3.5 55 7 - nA Ω Ω Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Transconductance Turn-on delay time Rise time Turn-off delay time Fall time SP-60N199-000-0 09/26/2013 Ciss Coss Crss gfs td(on) tr td(off) tf VGS=0 V, VDS=25 V, f=1 MHz VDS>2*ID*RDS, ID=10A VDS=380V, VGS=10V, ID=20A, RG=4Ω (External) pF S ns 2 Preliminary Data Sheet ICE60N199 Values Parameter Symbol Conditions Unit Min Typ Max - 13 - - 23 - - 62 - - 5.8 - V - 0.9 1.2 V - 407 - ns - 6.7 - µC - 32 - A Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg Gate plateau voltage Vplateau VDS=480 V, ID=20A, VGS=10 V nC Reverse Diode Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irm SP-60N199-000-0 09/26/2013 VGS=0V, IS=IF VRR=480V, IS=IF, diFIdt=100 A/µS 3 Preliminary Data Sheet ICE60N199 SP-60N199-000-0 09/26/2013 4 Preliminary Data Sheet ICE60N199 SP-60N199-000-0 09/26/2013 5 Preliminary Data Sheet ICE60N199 SP-60N199-000-0 09/26/2013 6 Preliminary Data Sheet ICE60N199 SP-60N199-000-0 09/26/2013 8 Preliminary Data Sheet ICE60N199 ICEMOS SUPERJUNCTION PATENT PORTFOLIO ICEMOS GRANTED PATENTS US7,429,772 US7,439,178 US7,446,018 US7,579,607 US7,723,172 US7,795,045 US7,846,821 US7,944,018 US8,012,806 US8,030,133 3D SEMI PATENTS LICENSED TO ICEMOS US7,041,560B2 US7,023,069B2 US7,364,994 US7,227,197B2 US7,304,944B2 US7,052,982B2 US7,339,252 US7,410,891 US7,439,583 US7,227,197B2 US6,635,906 US6,936,867 US7,015,104 US9,109,110 US7,271,067 US7,354,818 US7,052,982, US7,199,006B2 Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries. SP-60N199-000-0 09/26/2013 9 Preliminary Data Sheet ICE60N199 Marking Information YY = Last two digits of the year WW = Work week calendar on Icemos subcon assembly & test house * = Initial for Icemos subcon assembly and test house YYWW * XXXX00 ICE60N199 XXXX = Wafer Lot ID 00 = may be used for wafer ID in a special case. = "00" is used unless specified. ICE60N199 = ICE is Icemos logo and 60N199 is a designated device part number SP-60N199-000-0 09/26/2013 9