IDT IDT709089L12PF

HIGH-SPEED 64K x 8
SYNCHRONOUS
DUAL-PORT STATIC RAM
PRELIMINARY
IDT709089S/L
Features:
◆
◆
◆
◆
◆
◆
◆
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 9/12/15ns (max.)
Low-power operation
– IDT709089S
Active: 950mW (typ.)
Standby: 5mW (typ.)
– IDT709089L
Active: 950mW (typ.)
Standby: 1mW (typ.)
Flow-Through or Pipelined output mode on either port via
the FT/PIPE pin
Counter enable and reset features
Dual chip enables allow for depth expansion without
additional logic
◆
◆
◆
Full synchronous operation on both ports
– 4ns setup to clock and 1ns hold on all control, data,
and address inputs
– Data input, address, and control registers
– Fast 9ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 15ns cycle time, 66MHz operation in the Pipelined
output mode
TTL- compatible, single 5V (±10%) power supply
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Available in 100-pin Thin Quad Flatpack (TQFP) package
Functional Block Diagram
R/WR
R/WL
OEL
OER
CE0L
FT/PIPEL
0/1
1
0
0
I/O0L - I/O7L
1
0/1
FT/PIPER
I/O0R - I/O7R
A15L
ADSL
CNTENL
CNTRSTL
CE1R
I/O
Control
I/O
Control
A0L
CLKL
CE0R
1
0
0/1
1
0
0/1
CE1L
A15R
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A0R
CLKR
ADSR
CNTENR
CNTRSTR
3242 drw 01
FEBRUARY 2000
1
©2000 Integrated Device Technology, Inc.
DSC-3242/10
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Description:
With an input data register, the IDT709089 has been optimized for
applications having unidirectional or bidirectional data flow in bursts.
An automatic power down feature, controlled by CE0 and CE1, permits
the on-chip circuitry of each port to enter a very low standby power
mode. Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 950mW of power.
The IDT709089 is a high-speed 64K x 8 bit synchronous Dual-Port
RAM. The memory array utilizes Dual-Port memory cells to allow
simultaneous access of any address from both ports. Registers on control,
data, and address inputs provide minimal setup and hold times. The timing
latitude provided by this approach allows systems to be designed with very
short cycle times.
A0R
A1R
A2R
A3R
A4R
A5R
A6R
NC
NC
CNTENR
ADSR
CLKR
ADSL
GND
CLKL
NC
NC
A6L
A5L
A4L
A3L
A2L
A1L
A0L
Index
CNTENL
Pin Configuration(1,2,3)
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
75
74
3
73
4
72
NC
NC
A7L
A8L
A9L
A10L
A11L
A12L
A13L
A14L
A15L
NC
VCC
NC
NC
NC
NC
1
CE0L
CE1L
19
CNTRSTL
R/WL
OEL
FT/PIPEL
20
NC
NC
24
2
5
71
6
7
70
69
8
68
67
9
10
11
12
13
14
IDT709089PF
PN100-1(4)
66
100-PIN TQFP
TOP VIEW(5)
63
65
64
62
NC
NC
A7R
A8R
A9R
A10R
A11R
A12R
A13R
A14R
A15R
NC
GND
NC
NC
NC
NC
16
61
60
17
59
18
58
57
CE0R
56
55
CNTRSTR
R/WR
OER
FT/PIPER
15
21
54
22
23
53
52
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
CE1R
GND
NC
GND
NC
I/O7L
I/O6L
I/O5L
I/O4L
I/O3L
I/O2L
GND
I/O1L
I/O0L
VCC
GND
I/O0R
I/O1R
I/O2R
VCC
I/O3R
I/O4R
I/O5R
I/O6R
I/O7R
NC
NC
NC
3242 drw 02
NOTES:
1. All VCC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
2
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
Right Port
Names
CE0L, CE1L
CE0R, CE1R
Chip Enables
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L - A15L
A0R - A15R
Address
I/O0L - I/O7L
I/O0R - I/O7R
Data Input/Output
CLKL
CLKR
Clock
ADSL
ADSR
Address Strobe
CNTENL
CNTENR
Counter Enable
CNTRSTL
CNTRSTR
Counter Reset
FT/PIPE L
FT/PIPE R
Flow-Through/Pipeline
VCC
Power
GND
Ground
3242 tbl 01
Truth Table I—
Read/Write and Enable Control(1,2,3)
OE
CLK
CE0
CE1
R/W
I/O0-7
X
↑
H
X
X
High-Z
Deselected
X
↑
X
L
X
High-Z
Deselected
X
↑
L
H
L
DIN
Write
L
↑
L
H
H
DOUT
Read
H
X
L
H
X
High-Z
Outputs Disabled
Mode
3242 tbl 02
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2. ADS, CNTEN, CNTRST = X.
3. OE is an asynchronous input signal.
Truth Table II—Address Counter Control(1,2)
Address
Previous
Address
CLK
ADS
CNTEN
CNTRST
I/O(3)
X
X
↑
H
H
L
DI/O(0)
Counter Reset to Address 0
An
X
↑
L(4)
H
H
DI/O(n)
External Address Utilized
X
An
↑
H
H
H
DI/O(n)
External Address Blocked—Counter Disabled
An
↑
H
DI/O(n+1)
Counter Enable—Internal Address Generation
X
H
(5)
L
Mode
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2. CE0 and OE = VIL; CE1 and R/W = VIH.
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS is independent of all other signals including CE0 and CE1.
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0 and CE1.
3
6.42
3242 tbl 03
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Recommended Operating
Recommended DC Operating
(1,2)
Temperature and Supply Voltage
Conditions
Grade
Commercial
Industrial
Symbol
Ambient
Temperature
GND
Vcc
0OC to +70OC
0V
5.0V + 10%
-40OC to +85OC
0V
5.0V + 10%
Parameter
VCC
Supply Voltage
GND
Ground
VIH
Input High Voltage
Min.
Typ.
Max.
Unit
4.5
5.0
5.5
V
0
0
0
V
2.2
____
(1)
6.0
V
3242 tbl 04
NOTES:
1. This is the parameter TA.
2. Industrial temperature: for specific speeds, packages and powers contact
your sales office.
VIL
VTERM
(2)
Rating
Terminal Voltage
with Respect
to GND
____
0.8
V
3242 tbl 05
Capacitance(1)
Commercial
& Industrial
Unit
-0.5 to +7.0
V
(TA = +25°C, f = 1.0MHz)
Symbol
COUT
TBIAS
Temperature
Under Bias
-55 to +125
o
TSTG
Storage
Temperature
-55 to +125
o
IOUT
DC Output
Current
C
C
mA
Parameter
Input Capacitance
CIN
(3)
50
-0.5
NOTES:
1. VTERM must not exceed VCC + 10%.
2. VIL > -1.5V for pulse width less than 10ns.
Absolute Maximum Ratings(1)
Symbol
Input Low Voltage
(2)
Output Capacitance
Conditions(2)
Max.
Unit
VIN = 3dV
9
pF
VOUT = 3dV
10
pF
3242 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output
switch from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
3242 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
6.42
4
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
709089S/L
Symbol
Parameter
Test Conditions
(1)
Min.
Max.
Unit
10
µA
|ILI|
Input Leakage Current
VCC = 5.5V, VIN = 0V to V CC
___
|ILO|
Output Leakage Current
CE0 = VIH or CE1 = VIL, VOUT = 0V to V CC
___
10
µA
VOL
Output Low Voltage
IOL = +4mA
___
0.4
V
2.4
___
V
VOH
Output High Voltage
IOH = -4mA
3242 tbl 08
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(6,7) (VCC = 5V ± 10%)
709089X9
Com'l Only
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports CMOS Level Inputs)
Full Standby Current
(One Port CMOS Level Inputs)
Test Condition
CEL and CER= VIL
Outputs Open
f = fMAX(1)
CEL = CER = VIH
Version
Active Port Outputs
Open,
f=fMAX(1)
Both Ports CER and
CEL > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(2)
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
VIN > VCC - 0.2V or
VIN < 0.2V, Active Port
Outputs Open, f = fMAX(1)
709089X15
Com'l Only
Typ.(4)
Max.
Typ.(4)
Max.
Typ.(4)
Max.
Unit
mA
COM'L
S
L
210
210
390
350
200
200
345
305
190
190
325
285
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
50
50
135
115
50
50
100
90
50
50
110
90
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
140
140
270
240
130
130
230
200
120
120
220
190
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
130
130
245
225
120
120
205
185
110
110
195
175
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
f = fMAX(1)
CE"A" = VIL and
CE"B" = VIH(3)
709089X12
Com'l Only
mA
mA
mA
mA
3242 tbl 09
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input levels of
GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. Vcc = 5V, TA = 25°C for Typ, and are not production tested. ICC DC(f=0) = 150mA (Typ).
5. CEX = VIL means CE0X = VIL and CE1X = VIH
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V
"X" represents "L" for left port or "R" for right port.
6. 'X' in part numbers indicate power (S or L).
7. Industrial temperature: for specific speeds, packages and powers contact your sales office.
5
6.42
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns Max.
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
Figures 1,2 and 3
3242 tbl 10
5V
5V
893Ω
893Ω
DATAOUT
DATAOUT
30pF
347Ω
5pF*
347Ω
3242 drw 04
3242 drw 05
Figure 1. AC Output Test load.
8
7
Figure 2. Output Test Load
(For tCKLZ, tCKHZ, tOLZ, and tOHZ).
*Including scope and jig.
-10 pF is the I/O capacitance
of this device, and 30pF is the
AC Test Load Capacitance
6
tCD1,
tCD2
(Typical, ns)
5
4
3
2
1
0
-1
20 40 60 80 100 120 140 160 180 200
Capacitance (pF)
3242 drw 06
Figure 3. Typical Output Derating (Lumped Capacitive Load).
6.42
6
,
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing)(3,4,5) (VCC = 5V ± 10%, TA = 0°C to +70°C)
709089X9
Com'l Only
Symbol
tCYC1
Parameter
(2)
Clock Cycle Time (Flow-Through)
(2)
Min.
Max.
25
____
709089X12
Com'l Only
Min.
Max.
30
____
709089X15
Com'l Only
Min.
Max.
Unit
35
____
ns
ns
tCYC2
Clock Cycle Time (Pipelined)
15
____
20
____
25
____
tCH1
Clock High Time (Flow-Through)(2)
12
____
12
____
12
____
ns
tCL1
(2)
12
____
12
____
12
____
ns
6
____
8
____
10
____
ns
6
____
8
____
10
____
ns
3
ns
tCH2
tCL2
Clock Low Time (Flow-Through)
Clock High Time (Pipelined)
(2)
(2)
Clock Low Time (Pipelined)
Clock Rise Time
____
3
____
3
____
tF
Clock Fall Time
____
3
____
3
____
3
ns
tSA
Address Setup Time
4
____
4
____
4
____
ns
tHA
Address Hold Time
1
____
1
____
1
____
ns
4
____
4
____
4
____
ns
1
____
1
____
1
____
ns
4
____
4
____
4
____
ns
ns
tR
tSC
Chip Enable Setup Time
tHC
Chip Enable Hold Time
tSW
R/W Setup Time
tHW
R/W Hold Time
1
____
1
____
1
____
tSD
Input Data Setup Time
4
____
4
____
4
____
ns
tHD
Input Data Hold Time
1
____
1
____
1
____
ns
tSAD
ADS Setup Time
4
____
4
____
4
____
ns
tHAD
ADS Hold Time
1
____
1
____
1
____
ns
tSCN
CNTEN Setup Time
4
____
4
____
4
____
ns
tHCN
CNTEN Hold Time
1
____
1
____
1
____
ns
tSRST
CNTRST Setup Time
4
____
4
____
4
____
ns
tHRST
CNTRST Hold Time
1
____
1
____
1
____
ns
____
12
____
12
____
15
ns
2
____
2
____
2
____
ns
1
7
1
7
1
7
ns
tOE
Output Enable to Data Valid
tOLZ
Output Enable to Output Low-Z(1)
tOHZ
Output Enable to Output High-Z(1)
tCD1
tCD2
tDC
(2)
____
Clock to Data Valid (Flow-Through)
(2)
Clock to Data Valid (Pipelined)
Data Output Hold After Clock High
20
____
25
____
30
ns
____
9
____
12
____
15
ns
2
____
2
____
2
____
ns
tCKHZ
(1)
Clock High to Output High-Z
2
9
2
9
2
9
ns
tCKLZ
Clock High to Output Low-Z(1)
2
____
2
____
2
____
ns
Write Port Clock High to Read Data Delay
____
40
____
40
____
50
ns
Clock-to-Clock Setup Time
____
15
____
15
____
20
Port-to-Port Delay
tCWDD
tCCS
ns
3242 tbl 11
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device
characterization, but is not production tested.
2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPE = VIH. Flow-through parameters (tCYC1, tCD1) apply when
FT/PIPE = VIL for that port.
3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a DC
signal, i.e. steady state during operation.
4. 'X' in part number indicates power rating (S or L).
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
7
6.42
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for
Flow-Through Output (FT/PIPE"X" = VIL)(3,6)
tCYC1
tCH1
tCL1
CLK
CE0
tSC
tHC
tSC
tHC
(4)
CE1
R/W
(5)
ADDRESS
tSW
tHW
tSA
tHA
An
An + 1
tCKHZ (1)
Qn
DATAOUT
tCKLZ
An + 3
tDC
tCD1
OE
An + 2
Qn + 1
(1)
tOHZ
Qn + 2
(1)
tOLZ
tDC
(1)
(2)
tOE
3242 drw 07
Timing Waveform of Read Cycle for Pipelined Output
(FT/PIPE"X" = VIH)(3,6)
tCYC2
tCH2
tCL2
CLK
CE0
tSC
tSC
tHC
(4)
CE1
R/W
ADDRESS(5)
tHC
tSW
tHW
tSA
tHA
An
An + 1
(1 Latency)
An + 2
tDC
tCD2
DATAOUT
Qn
tCKLZ
An + 3
Qn + 1
(1)
tOHZ
Qn + 2
(1)
tOLZ
(1)
(2)
OE
tOE
NOTES:
3242 drw 08
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
3. ADS = VIL, CNTEN and CNTRST = VIH.
4. The output is disabled (High-Impedance state) by CE0 = VIH or CE1 = VIL following the next rising edge of clock. Refer to Truth Table 1.
5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use
only.
6. "X" denotes Left or Right port. The diagram is with respect to that port.
6.42
8
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read(1,2)
tCH2
tCYC2
tCL2
CLK
tSA
ADDRESS(B1)
+-0(B1)
tHA
A0
tSC
tHC
tSC
tHC
tCD2
tCD2
Q0
DATAOUT(B1)
tSC
tCD2
Q3
tCKLZ
(3)
tCKHZ (3)
A6
A5
A4
A3
A2
A1
tSC
+-0(B2)
(3)
tHA
A0
ADDRESS(B2)
tCKHZ
Q1
tDC
tDC
tSA
A6
A5
A4
A3
A2
A1
tHC
tHC
tCD2
DATAOUT(B2)
tCKLZ
(3)
tCKHZ
(3)
tCD2
Q2
Q4
tCKLZ (3)
3242 drw 09
Timing Waveform of a Bank Select Flow-Through Read(6,7)
tCH1
tCYC1
tCL1
CLK
tSA
ADDRESS(B1)
CE0(B1)
tHA
A0
tSC
A6
A5
A4
A3
A2
A1
tHC
tSC tHC
tCD1
tCD1
D0
DATAOUT(B1)
tCKHZ
tCD1
D3
tCKLZ
tDC
(1)
D5
tCKHZ (1)
tCKLZ
(1)
tHA
A0
ADDRESS(B2)
tCD1
D1
tDC
tSA
(1)
A1
A6
A5
A4
A3
A2
tSC tHC
CE0(B2)
tSC
tHC
tCD1
DATAOUT(B2)
tCKLZ
(1)
tCKHZ
(1)
tCD1
D2
tCKLZ
(1)
tCKHZ
(1)
D4
3242 drw 09a
NOTES:
1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one 709089 for this waveform, and are setup for depth expansion in this example.
ADDRESS(B1) = ADDRESS(B2) in this situation.
2. OE and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and CNTRST = VIH.
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
4. CE0 and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.
5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD.
If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case.
7. All timing is the same for both Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A".
9
6.42
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform with Port-to-Port Flow-Through Read(1,2,3,5)
CLK "A"
tSW
tHW
tSA
tHA
R/W"A"
ADDRESS"A"
tSD
DATAIN"A"
NO
MATCH
MATCH
tHD
VALID
tCCS
(4)
CLK"B"
tCD1
R/W"B"
tSW tHW
tSA
ADDRESS"B"
tHA
NO
MATCH
MATCH
tCWDD
(4)
tCD1
DATAOUT"B"
VALID
tDC
VALID
tDC
3242 drw 10
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. CE0 and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.
3. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
4. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD.
If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case.
5. All timing is the same for both Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A".
6.42
10
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3)
tCYC2
tCH2
tCL2
CLK
CE0
tSC
tHC
CE1
tSW tHW
R/W
(4)
ADDRESS
tSW tHW
An
tSA tHA
An +1
An + 2
An + 3
An + 2
An + 4
tSD tHD
DATAIN
Dn + 2
tCD2
(2)
tCKHZ (1)
tCKLZ
(1)
tCD2
Qn + 3
Qn
DATAOUT
READ
NOP
(5)
WRITE
READ
3242 drw 11
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(3)
tCH2
tCYC2
tCL2
CLK
CE0
tSC
tHC
CE1
tSW tHW
R/W
(4)
ADDRESS
tSW tHW
An
tSA tHA
An +1
An + 2
tSD
DATAIN
Dn + 2
tCD2
(2)
An + 3
An + 4
An + 5
tHD
Dn + 3
tCKLZ(1)
tCD2
Qn
DATAOUT
Qn + 4
tOHZ(1)
OE
READ
WRITE
READ
3242 drw 12
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
3. CE0 and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
11
6.42
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform Flow-Through Read-to-Write-to-Read (OE = VIL)(3)
tCH1
tCYC1
tCL1
CLK
CE0
tSC
tHC
CE1
tSW tHW
R/W
tSW tHW
(4)
ADDRESS
tSA
An
tHA
An +1
An + 2
An + 4
An + 3
An + 2
tSD tHD
DATAIN
Dn + 2
tCD1
(2)
tCD1
tCD1
Qn
DATAOUT
tCD1
Qn + 3
Qn + 1
tDC
tCKHZ
(5)
NOP
READ
(1)
(1)
tCKLZ
WRITE
tDC
READ
3242 drw 13
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(3)
tCYC1
tCH1
tCL1
CLK
CE0
tSC
tHC
CE1
tSW tHW
R/W
tSW tHW
(4)
ADDRESS
tSA
An
tHA
An +1
An + 2
DATAIN
Dn + 3
Dn + 2
(2)
DATAOUT
An + 3
An + 4
An + 5
tSD tHD
tDC
tCD1
Qn
tOE
tCD1
(1)
tOHZ
tCKLZ
(1)
tCD1
Qn + 4
tDC
OE
READ
WRITE
READ
3242 drw 14
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance is determined by the previous cycle control signals.
3. CE0 and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42
12
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance(1)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
An
ADDRESS
tSAD tHAD
ADS
tSAD tHAD
CNTEN
tSCN tHCN
tCD2
DATAOUT
Qx - 1(2)
Qn + 2(2)
Qn + 1
Qn
Qx
Qn + 3
tDC
READ
EXTERNAL
ADDRESS
READ
WITH
COUNTER
COUNTER
HOLD
READ WITH COUNTER
3242 drw 15
Timing Waveform of Flow-Through Read with Address Counter Advance(1)
tCYC1
tCH1
tCL1
CLK
tSA
ADDRESS
tHA
An
tSAD tHAD
ADS
tSAD tHAD
tSCN tHCN
CNTEN
tCD1
DATAOUT
Qx(2)
Qn
Qn + 1
Qn + 2
Qn + 3(2)
Qn + 4
tDC
READ
EXTERNAL
ADDRESS
READ WITH COUNTER
COUNTER
HOLD
READ
WITH
COUNTER
3242 drw 16
NOTES:
1. CE0 and OE = VIL; CE1, R/W, and CNTRST = VIH.
2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output
remains constant for subsequent clocks.
13
6.42
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-Through or Pipelined Outputs)(1)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
An
ADDRESS
INTERNAL(3)
ADDRESS
An(7)
An + 2
An + 1
An + 4
An + 3
tSAD tHAD
ADS
CNTEN
tSD tHD
Dn + 1
Dn
DATAIN
WRITE
EXTERNAL
ADDRESS
Dn + 1
Dn + 4
Dn + 3
Dn + 2
WRITE
WRITE
WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
3242 drw 17
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
tCH2
tCYC2
tCL2
CLK
tSA tHA
(4)
An
ADDRESS
INTERNAL(3)
ADDRESS
Ax
(6)
0
1
An + 1
An + 2
An + 1
An
tSW tHW
R/W
ADS
tSAD tHAD
CNTEN
tSCN tHCN
tSRST tHRST
CNTRST
tSD
tHD
D0
DATAIN
(5)
Q1
Q0
DATAOUT
COUNTER
RESET
(6)
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
READ
ADDRESS n
Qn
READ
ADDRESS n+1
3242 drw 18
NOTES:
1. CE0 and R/W = VIL; CE1 and CNTRST = VIH.
2. CE0 = VIL; CE1 = VIH.
3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH.
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset. ADDR0 will be accessed. Extra cycles are shown here
simply for clarification.
7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written
to during this cycle.
6.42
14
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Functional Description
Depth and Width Expansion
The IDT709089 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold
times on address, data, and all critical control inputs. All internal
registers are clocked on the rising edge of the clock signal, however,
the self-timed internal write pulse is independent of the LOW to HIGH
transition of the clock signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the address counters for fast interleaved memory applications.
A HIGH on CE0 or a LOW on CE1 for one clock cycle will power
down the internal circuitry to reduce static power consumption.
Multiple chip enables allow easier banking of multiple IDT709089's for
depth expansion configurations. When the Pipelined output mode is
enabled, two cycles are required with CE0 LOW and CE1 HIGH to reactivate the outputs.
The IDT709089 features dual chip enables (refer to Truth Table I)
in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
The 709089 can also be used in applications requiring expanded
width, as indicated in Figure 4. Since the banks are allocated at the
discretion of the user, the external controller can be set up to drive the
input signals for the various devices as required to allow for 16-bit or
wider applications.
A15
IDT709089
CE0
CE1
IDT709089
CE1
VCC
VCC
Control Inputs
Control Inputs
IDT709089
CE0
IDT709089
CE1
CE1
CE0
CE0
Control Inputs
Control Inputs
3242 drw 19
Figure 4. Depth and Width Expansion with IDT709089
15
6.42
CNTRST
CLK
ADS
CNTEN
R/W
OE
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Ordering Information
IDT
XXXXX
A
99
A
A
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Blank
I(1)
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
PF
100-pin TQFP (PN100-1)
9
12
15
Commercial Only
Commercial Only
Commercial Only
S
L
Standard Power
Low Power
Speed in nanoseconds
709089 512K (64K x 8-Bit) Synchronous Dual-Port RAM
3242 drw 20A
NOTE:
1. Industrial temperature range is available.
For specific speeds, packages and powers contact your sales office.
Ordering Information for Flow-through Devices
Old Flow-through Part
New Combined Part
70908S/L20
709089S/L9
70908S/L25
709089S/L12
70908S/L30
709089S/L15
3242 tbl 12
Preliminary Datasheet:
"PRELIMINARY' datasheets contain descriptions for products that are in early release.
6.42
16
IDT709089S/L
High-Speed 64K x 8 Synchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Datasheet Document History
1/12/99:
6/7/99:
11/10/99:
12/22/99:
1/12/00:
2/18/00:
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Added additional notes to pin configurations
Page 15 Added Depth and Width Expansion note
Changed drawing format
Page 4 Deleted note 6 for Table II
Replaced IDT logo
Page 1 Removed "Separate upper-byte..." line
Combined Pipelined 709089 family and Flow-through 70908 family offerings into one data sheet
Changed ±200mV in waveform notes to 0mV
Added corrresponding part chart with ordering information
Pages 8 and 9 Changed ±220mV waveform notes to 0mV
Page 9 Changed "Operation" in heading to "Pipelined Output", fixed drawing 08
Removed PGA pin
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17
6.42
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