INFINEON IPI041N12N3G

IPI041N12N3 G
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
IPB038N12N3 G
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
V DS
120
V
R DS(on),max (TO-263)
3.8
mΩ
ID
120
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
PG-TO263-3
PG-TO262-3
PG-TO220-3
Marking
038N12N
041N12N
041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
120
T C=100 °C
120
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
480
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
900
mJ
Gate source voltage 4)
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 2.2
55/175/56
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2009-07-16
IPI041N12N3 G
IPP041N12N3 G
Parameter
IPB038N12N3 G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.5
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
120
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=270 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A
-
3.5
4.1
mΩ
V GS=10 V, I D=100 A,
TO263
-
3.2
3.8
-
1.4
-
Ω
83
165
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=100 A
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A.
3)
See figure 3
4)
Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-07-16
IPI041N12N3 G
IPP041N12N3 G
Parameter
IPB038N12N3 G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
10400
13800 pF
-
1320
1760
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
61
-
Turn-on delay time
t d(on)
-
35
-
Rise time
tr
-
52.0
-
Turn-off delay time
t d(off)
-
70
-
Fall time
tf
-
21
-
Gate to source charge
Q gs
-
52
-
Gate to drain charge
Q gd
-
37
-
Switching charge
Q sw
-
58
-
Gate charge total
Qg
-
158
211
Gate plateau voltage
V plateau
-
5.0
-
Output charge
Q oss
-
182
243
nC
-
-
120
A
-
-
480
-
0.9
1.2
-
123
-
356
V GS=0 V, V DS=60 V,
f =1 MHz
V DD=60 V, V GS=10 V,
I D=100 A, R G=1.6 Ω
ns
Gate Charge Characteristics 6)
V DD=60.1 V,
I D=100 A,
V GS=0 to 10 V
V DD=60.1 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
6)
Rev. 2.2
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=60 V, I F=I S,
di F/dt =100 A/µs
V
ns
-
nC
See figure 16 for gate charge parameter definition
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2009-07-16
IPI041N12N3 G
IPP041N12N3 G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
350
140
300
120
250
100
200
80
I D [A]
P tot [W]
1 Power dissipation
IPB038N12N3 G
150
60
100
40
50
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
200
T C [°C]
100
limited by on-state
resistance
1 µs
100 µs
0.5
10 µs
10 ms
102
1 ms
10-1
I D [A]
10
1
0.01
-2
single pulse
10-3
-1
10
0
10
1
10
2
10
3
V DS [V]
Rev. 2.2
0.05
0.02
10
100
10
0.1
Z thJC [K/W]
DC
0.2
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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2009-07-16
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
10
7V
4.5 V
9
10 V
320
6.5 V
8
6V
I D [A]
R DS(on) [mΩ]
240
5.5 V
160
7
5V
6
5.5 V
5
6V
4
80
10 V
5V
3
4.5 V
0
2
0
1
2
3
4
5
0
50
V DS [V]
100
150
100
150
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
300
200
250
160
200
g fs [S]
I D [A]
120
150
80
100
175 °C
25 °C
40
50
0
0
0
2
4
6
8
Rev. 2.2
0
50
I D [A]
V GS [V]
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2009-07-16
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
10
4
3.5
8
2700 µA
270 µA
2.5
6
V GS(th) [V]
R DS(on) [mΩ]
3
98 %
typ
4
2
1.5
1
2
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
104
175 °C
102
Coss
25 °C, 98%
10
I F [A]
C [pF]
175 °C, 98%
25 °C
Ciss
3
Crss
101
102
101
100
0
20
40
60
80
100
V DS [V]
Rev. 2.2
0
0.5
1
1.5
2
V SD [V]
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IPI041N12N3 G
IPP041N12N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start)
parameter: V DD
1000
IPB038N12N3 G
10
96 V
8
60 V
24 V
100
25 °C
V GS [V]
I AS [A]
6
100 °C
4
150 °C
10
2
1
0
1
10
100
1000
0
50
100
150
200
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
140
V GS
135
Qg
130
V BR(DSS) [V]
125
120
V g s(th)
115
110
Q g(th)
105
Q sw
Q gs
100
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.2
page 7
2009-07-16
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
PG-TO220-3: Outline
Rev. 2.2
page 8
2009-07-16
IPI041N12N3 G
IPP041N12N3 G
Rev. 2.2
page 9
IPB038N12N3 G
2009-07-16
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
PG-TO-263 (D²-Pak)
Rev. 2.2
page 10
2009-07-16
IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 2.2
page 11
2009-07-16