Data Sheet No.PD60210_C IR3311(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown Reverse battery protection Rds(on) 12mΩ Vcc.op. 6 to 28V Current ratio Ishutdown Description The IR 3311(S) is a Fully Protected 4 terminal high side switch. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified Vih threshold, the output power MOSFET is turned-on. When Vcc - Vin is lower than the specified Vil threshold, the output MOSFET is turned-off. A sense current proportional to the current in the power Mosfet is sourced to the Ifb pin. Over-current shutdown occurs when Vifb - Vin > 4.5 V. The current shutdown threshold is adjusted by selecting the proper RIfb. Either over-current and over-temperature latches off the switch. The device is reset by pulling the input pin high. Other integrated protections ( ESD, reverse battery, active clamp ) make the IR3311(S) very rugged and suitable for the automotive environment. 5300 6A to 58A Active clamp 35V Load Dump 40V Package 5 Lead TO220 IR3311 5 Lead D2Pak (SMD220) IR3311S Typical Connection VCC IN IR 3311 Ifb Battery OUT 10 k LOAD RIfb on off System Ground Power Ground www.irf.com 1 IR3311(S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Vcc lead. (TAmbient = 25oC unless otherwise specified). Symbol Parameter Min. Max. Vcc - Vin max Vcc-VIfb max Vcc - Vout max. Maximum input voltage Maximum Ifb voltage Maximum output voltage -16 -0.3 -0.3 50 50 30 Units Ids cont. Ids1 cont Ids pulsed ESD 1 ESD 2 Pd TJ max. Diode max. permanent current (Rth = 60 °C/W) (1) Diode max. permanent current (Rth = 5 °C/W) (1) Diode max. pulsed current (1) Electrostatic discharge (human body model) C=100pF, R=1500Ω, Electrostatic discharge (machine model)C=200pF, R=0Ω, L=10µH Power dissipation ( Rth = 60 °C/W ) Max. storage and junction temperature — — — — — — -40 2.8 30 100 4 0.5 2 150 Min RIfb Ifb max Minimum resistor on the Ifb pin Max. Ifb current 0.3 -20 — +20 kΩ mA Typ. Max. Units 60 — — V A kV W °C Thermal Characteristics Symbol Rth Rth Rth Rth 1 2 1 2 Rth 3 Parameter Thermal resistance junction to Ambient - TO220 Thermal resistance junction to case - TO220 Thermal resistance with standard footprint - SMD220 Thermal resistance with 1" square footprint - SMD220 Thermal resistance junction to case - SMD220 0.7 60 35 0.7 — — — °C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Vcc -Vin Vcc -VIfb Vcc Iout Iout 85°C amb. RIfb Pulse min. Fmax Continuous input voltage Continuous Ifb pin voltage Supply to power ground voltage Continuous output current ( Rth/amb < 5 °C/W, Tj = 125°C) Continuous output current ( Rth/amb < 60 °C/W, Tj = 125°C) Ifb resistor to program Isd and scale (2 & 3) Minimum turn-on pulse width Maximum operating frequency Fmax Prot. Maximum frequency with protections activated Min. Max. Units 6 0.3 6 28 28 28 V — — 0.5 1 18 5 3.5 — — — 500 200 A kΩ ms Hz 1) Limited by junction temperature. Pulsed current is also limited by wiring 2) <500 Ohm or shorting Ifb to gnd may damage the part with Isd around 90A 3) >5000 Ohm or leaving Ifb open will shutdown the part. No current will flow in the load. 2 WWW.IRF.COM IR3311(S) Protection Characteristics Tj = 25oC (unless otherwise specified), RIfb = 500 to 5kOhm. Symbol Parameter VIfb -Vin @ Isd Over-current shutdown threshold Tsd Treset OV Isdf Isd_1k Min.Pulse WAIT Over-temp. shutdown threshold Protection reset time Over voltage shutdown (not latched) Fixed over current shutdown Adjustable over current shutdown 1K Minimum pulse width (no WAIT state) WAIT function timer Rev.Rdson Rds(on) reverse battery protection Min. Typ. Max. Units Test Conditions 4 — — — 58 18 200 0.5 4.5 5.4 165 50 36 70 24 500 1.2 — 300 — 90 31 1200 3.5 µS V A A µs ms 6 10 18 mΩ V °C see Fig. 7 see Fig. 7 VIfb<Vin RIfb=1k see Fig. 6 see Figs. 6 and 7 Vcc-Vin=-12V, Iload=10A Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. Iq Total quiescent current (Iout +Ifb) — 22 Max. Units Test Conditions 50 µA Iin Vih Vil Vhys Iout qs Input current High level input threshold voltage (4) Low level input threshold voltage (4) Input hysterisis = Vih-Vil Output quiescent current 1.5 — 3.5 0.4 — 4 5 4 1 9 6 mA 5.5 — 1.5 15 Rds1 on Rds2 on Rds3 on Vclamp1 Vclamp2 Vsd Vaval. ON state resistance (5) ON state resistance (5) ON state resistance (5) Vcc to Vout active clamp voltage Vcc to Vout active clamp voltage Body diode forward voltage Vcc to Vout avalanche voltage 5 5 10 30 — — 40 9 9.5 17 35 36 0.85 43 12 17 23 — 40 1 50 Vcc-Vin=0, Vcc- Vout=12V Vcc-VIfb=12V Vcc-Vin=14V V µA mΩ V Vcc-Vin=0; Vcc-VIfb=0; Vcc-Vout=12V Iout=30A, Vcc-Vin=14V Iout=17A, Vcc -Vin=6V Iout=30A, Tj = 150oC Iout = 10mA Iout=30A,Vcc-VIfb<20V Iout=5A Iout=100mA,Vcc-Vfb> 35V Switching Electrical Characteristics Vcc = 14V, Resistive Load = 0.4Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Tr1 Tr2 E on Td off Tf Eoff Turn-on delay time to Vcc-Vout= 0.9 Vcc Rise time to Vcc-Vout=5V Rise time to Vcc -Vout = 0.1Vcc Turn ON energy Turn-off delay to Vcc -Vout = 0.1Vcc Fall time to Vcc-Vout = 0.9 Vcc Turn OFF energy Min. 2 0.4 10 — 6 3 — Typ. Max. Units Test Conditions 9 1.6 30 1.5 25 10 1 20 5 100 3 80 30 2 µs see figure 2 mJ µs see figure 3 mJ 4) Input thresholds are measured directly between the input pin and the tab. Any parasitic resistance in common between the load current path and the input signal path can significantly affect the thresholds. 5) Rds(on) is measured between the Tab and the Out pin, 5mm away from the package. WWW.IRF.COM 3 IR3311(S) Current Sense Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Ratio 4,500 5,300 6,300 — -5 -0.9 — 0 0 0 +5 0.9 15 % A µs I load / IIfb current ratio Ratio_TC Iload/Ifb variation over temperature offset Load current diagnostic offset Trst Ifb response time (low signal) Tj = 25oC ,Rfb = 500Ω, I = 50A Tj = -40 T0 +150oC I = 2A 90% of the I load step Functional Block Diagram VCC active clamp disconnection charge pump driver On/Off fast turn-off 4mA 70V 33V 70V + - 33V 36V 33V Q Reset latch Set Wait 43V timer 1.5 ms timer 4V 300 us - - Min. pulse + + 80Ω I out > 60 A Tj > 165 °C IN 4 reverse battery protection Ifb OUT WWW.IRF.COM IR3311(S) Lead Assignments 3 (Vcc) 3 (Vcc) 1 - In 2 - Ifb 3 - Vcc (tab) 4 - NC 5 - Out 12345 12345 5 Lead - D2PAK (SMD220) 5 Lead - TO220 IR3311 IR3311S Part Number Vcc-Vin Vcc-Vin Vcc-Vin max Vcc-Vin1 max Vcc-Vin (op) Vih Vil Vhys Vcc-Vout Vcc-Vout max Vcc Vclamp1 Vclamp2 In IR3311 Iin Iin max Iin1,2 Iin(on) VIfb Ifb Out Iout Iout max -Ids cont. -Ids pulsed Iout 85°C Isd Iq Ifb Figure 1 - Voltages and currents definitions WWW.IRF.COM Vcc 90% Vcc-Vout DV/dt(on) 5V 10 % Td on Tr1 Tr2 Figure 2 - Switching time definitions (turn-on) 5 IR3311(S) Vcc Vcc-Vin Vin 90% Ids Vcc-Vout DV/dt(off) T clamp Vcc Vds clamp 10 % Td off Tf Vout Vcc-Vclamp ( see Design tip to evaluate power dissipation ) Figure 3 - Switching time definitions (turn-off) Vin Figure 4 - Active clamp waveforms clamp Vcc-Vin 12V 0V I Load 38 us (typ.) T minpulse Iout T minpulse Wait Ifb 0V Precise measurement Figure 6 - Minimum pulse & WAIT function Figure 5 - Current sense precision: Accurate measurement only when the power Mosfet is fully ON 6 WWW.IRF.COM IR3311(S) Vcc-Vin 12V 0V Iout t < T reset t > T reset t > T reset t < T reset OI shutdown Isd wait wait Tj OT shutdown Tjsd Figure 7 - Protection Timing Diagrams All curves are typical characteristics. Operation in hatched areas is not recommended. Tj=250C, RIfb=500 Ohm, Vcc=14V (unless otherwise specified). 16 10 14 8 12 10 6 8 4 6 4 2 2 0 0 0 10 20 30 40 50 60 Figure 8 - Icc (mA) vs Vcc-Vin (V) WWW.IRF.COM 70 0 5 10 15 20 25 30 Figure 9- Rdson (mΩ) vs Vcc-Vin (V) 7 IR3311(S) 6 200% 180% 5 160% 140% 4 120% 3 100% 80% 2 60% 40% Vifb-Vin Vih 1 20% Vil 0% -50 -25 0 25 50 75 100 125 150 0 -50 Figure 10 -Normalized Rdson (%) vs Tj (oC) -25 0 25 50 Isd min 3s isd typ Isd max 3s 8 Max. specified 7 100 125 150 Figure 11 - Vih, Vil & Vifb -Vin (V) vs Tj (oC) 100 9 75 6 5 4 10 Typical value 3 2 1 0 0 15 30 45 60 Figure 12 - Error (+/-A) vs Iload (A) 8 1 100 1000 10000 Figure 13 - Isd (A) vs RIfb (Ohm) WWW.IRF.COM IR3311(S) 100 5°C/W 15°C/W 35°C/W 1'' f oot 60°C/W s td f ooprint 50 45 40 35 30 25 10 20 15 10 single pulse 10 Hz rth=60°C/W dT=25°C 100Hz rth=60°C/W dT=25°C 1kHz rth=60°C/W dT=25°C 5 0 -50 0 50 100 150 200 1 0.001 Figure 14 - Max. DC current (A) vs Temp. (°C) 100 0.01 0.1 1 10 Figure 15 - Max. I (A) vs inductance (mH) 100 60°C/W free air 5°C/W Current path capability should be above those 10 10 Loaad Characteristic should be above those curves 1 T=25°C free air/ std. footprint T=100°C free air/ std. footprint 0.1 1 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 16 - I out (A) vs Protection resp. Time (s) WWW.IRF.COM 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 17 - Rth (oC/W) vs Time (s) 9 IR3311(S) Case Outline - TO220 (5 lead) IRGB 01-3042 01 10 WWW.IRF.COM IR3311(S) Case Outline 5 Lead - D2PAK (SMD220) WWW.IRF.COM 11 IR3311(S) Tape & Reel 5 Lead - D2PAK (SMD220) 01-3071 00 / 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q100] market. 10/21/2003 12 WWW.IRF.COM