IRF IRF630N

PD - 94005A
IRF630N
IRF630NS
IRF630NL
Advanced Process Technology
Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
l
HEXFET® Power MOSFET
l
D
RDS(on) = 0.30Ω
G
Fifth Generation HEXFET ® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for lowprofile application.
VDSS = 200V
ID = 9.3A
S
TO-220AB
IRF630N
D2Pak
IRF630NS
TO-262
IRF630NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
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Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew„
Max.
9.3
6.5
37
82
0.5
±20
94
9.3
8.2
8.1
-55 to +175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
1
10/11/00
IRF630N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
200
–––
–––
2.0
4.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.9
14
27
15
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.30
Ω
VGS = 10V, ID = 5.4A ƒ
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 5.4A ƒ
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
35
ID = 5.4A
6.5
nC VDS = 160V
17
VGS = 10V ƒ
–––
VDD = 100V
–––
ID = 5.4A
ns
–––
RG = 13Ω
–––
RD = 18Ω ƒ
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
575 –––
VGS = 0V
89 –––
VDS = 25V
25 –––
pF
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 9.3
showing the
A
G
integral reverse
––– ––– 37
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 5.4A, VGS = 0V ƒ
––– 117 176
ns
TJ = 25°C, IF = 5.4A
––– 542 813
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
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Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)…
–––
0.50
–––
–––
1.83
–––
62
40
Units
°C/W
2
IRF630N/S/L
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
1
4.5V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
4.5V
1
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
5.0
10
100
Fig 2. Typical Output Characteristics
100
0.1
4.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 175°C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
3.5
ID = 9.3A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF630N/S/L
1200
VGS , Gate-to-Source Voltage (V)
Crss = Cgd
Coss = Cds + Cgd
1000
C, Capacitance(pF)
16
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
800
Ciss
600
Coss
400
Crss
200
V DS= 160V
V DS= 100V
V DS= 40V
12
8
4
0
0
1
10
100
0
1000
5
10
15
20
25
30
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
ID = 5.4A
100
10
TJ = 175 ° C
TJ = 25 ° C
1
10us
10
100us
1ms
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.2
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4
IRF630N/S/L
RD
VDS
12
12
VGS
D.U.T.
RG
+
V
DD
ID , Drain Current (A)
ID , Drain Current (A)
9
-
9
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
6
Fig 10a. Switching Time Test Circuit
VDS
3
3
0
90%
0
25
25
50
50
75
100
125
150
125
° C)
TC 75
, Case100
Temperature
(150
TC , Case Temperature ( ° C)
175
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRF630N/S/L
200
ID
2.2A
3.8A
BOTTOM 5.4A
TOP
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
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ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
IRF630N/S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF630N/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .87 (.11 3 )
2 .62 (.10 3 )
10.5 4 (.4 15 )
10.2 9 (.4 05 )
-B-
3 .78 (.14 9 )
3 .54 (.13 9 )
4 .69 (.1 85 )
4 .20 (.1 65 )
-A -
1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
6.4 7 (.255 )
6.1 0 (.240 )
4
15 .24 (.6 00 )
14 .84 (.5 84 )
1.1 5 (.0 45)
M IN
1
2
L E A D A S S IG N M E NT S
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN
3
14 .09 (.5 55 )
13 .47 (.5 30 )
4 .0 6 (.16 0 )
3 .5 5 (.14 0 )
3X
1.4 0 (.0 55 )
3X
1.1 5 (.0 45 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .3 6 (.0 1 4)
3X
M
B A M
0.5 5 (.0 22)
0.4 6 (.0 18)
2 .92 (.11 5 )
2 .64 (.10 4 )
2 .5 4 (.1 00)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 .
3 O UTL IN E C O NF O R M S TO J E DE C O UT L IN E TO -22 0 A B .
2 C O N TR O L LING D IM E N S IO N : INC H
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y
L O T C O D E 9 B 1M
A
IN T E R N A T IO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
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PART NUMBER
IR F 1 0 10
9 24 6
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
8
IRF630N/S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.4 9 (.610)
14.7 3 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.8 9 (.350)
REF.
1.39 (.055)
1.14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.450)
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
D2Pak Part Marking Information
IN TE R N A T IO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
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A
PART NUMBER
F530S
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
9
IRF630N/S/L
TO-262 Package Outline
TO-262 Part Marking Information
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10
IRF630N/S/L
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C T IO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1.6 0 (.06 3 )
1.5 0 (.05 9 )
1 1.60 (.4 57 )
1 1.40 (.4 49 )
0.3 68 (.014 5 )
0.3 42 (.013 5 )
2 4.30 (.95 7)
2 3.90 (.94 1)
1 5.42 (.6 09 )
1 5.22 (.6 01 )
TR L
10.90 (.42 9)
10.70 (.42 1)
1.75 (.069 )
1.25 (.049 )
4.7 2 (.1 36 )
4.5 2 (.1 78 )
16 .1 0 (.63 4 )
15 .9 0 (.62 6 )
F E E D D IR E C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
M A X.
Notes:
60.00 (2.362)
M IN .
NOTES :
1. C O M F O R M S T O EIA -418.
2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 6.5mH
26.40 (1.03 9)
24.40 (.961 )
3
30.40 (1.197)
M AX.
4
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ This is only applied to TO-220AB package.
RG = 25Ω, IAS = 5.4A.
… This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
† ISD ≤ 5.4A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
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11