PD - 94107 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF644N IRF644NS IRF644NL l HEXFET® Power MOSFET D RDS(on) = 240mΩ G Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 250V ID = 14A S TO-220AB IRF644N D2Pak IRF644NS TO-262 IRF644NL The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 14 9.9 56 150 1.0 ± 20 180 8.4 15 7.9 -55 to + 175 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) 1 3/15/01 IRF644N/644NS/644NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 250 ––– ––– 2.0 8.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.33 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 21 30 17 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 1060 140 38 V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 240 mΩ VGS = 10V, ID = 8.4A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 8.4A 25 VDS = 250V, VGS = 0V µA 250 VDS = 200V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 54 ID = 8.4A 9.2 nC VDS = 200V 26 VGS = 10V, See Fig. 6 and 13 ––– VDD = 125V ––– ID = 8.4A ns ––– RG = 6.2Ω ––– VGS = 10V, See Fig. 10 D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 ––– ––– showing the A G integral reverse 56 ––– ––– S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V ––– 165 250 ns TJ = 25°C, IF = 14A ––– 1.0 1.6 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance RθJC RθCS RθJA RθJA 2 Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)** ––– 0.50 ––– ––– 1.0 ––– 62 40 Units °C/W www.irf.com IRF644N/644NS/644NL 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 4.5V 1 10 4.5V 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.5 TJ = 175 ° C TJ = 25 ° C 10 V DS = 50V 20µs PULSE WIDTH 6 8 10 11 13 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 4 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1 1 15 ID = 14A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF644N/644NS/644NL VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd Ciss 1000 Coss 100 Crss VGS , Gate-to-Source Voltage (V) 20 10000 10 ID = 8.4A 16 12 8 4 0 1 10 0 100 24 36 48 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 12 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 0.4 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 TJ = 175 ° C 10 0.8 1.1 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 V DS = 200V V DS = 125V V DS = 50V 10 100µsec 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 10msec 0.1 1.5 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF644N/644NS/644NL 15 RD VDS VGS ID , Drain Current (A) 12 D.U.T. RG + -VDD 9 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 1 5V L VD S D R IV E R D .U .T RG + - VD D IA S 20V 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A EAS , Single Pulse Avalanche Energy (mJ) IRF644N/644NS/644NL 300 ID 3.4A 5.9A BOTTOM 8.4A TOP 240 180 120 60 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF644N/644NS/644NL Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF644N/644NS/644NL Package Outline TO-220AB Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A - -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) 0 .3 6 (.01 4) 3X M B A M 0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE 8 PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK www.irf.com IRF644N/644NS/644NL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E www.irf.com A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 9 IRF644N/644NS/644NL TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com IRF644N/644NS/644NL D2Pak Tape & Reel Information TRR 1.60 (.0 63) 1.50 (.0 59) 4.10 (.16 1) 3.90 (.15 3) F E E D D IR E C TION 1 .85 (.073) 1 .6 0 (.06 3 ) 1 .5 0 (.05 9 ) 1 1 .6 0 (.4 57 ) 1 1 .4 0 (.4 49 ) 1 .65 (.065) 0.36 8 (.01 4 5 ) 0.34 2 (.01 3 5 ) 1 5.42 ( .6 09 ) 1 5.22 ( .6 01 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 10 .9 0 (.4 2 9 ) 10 .7 0 (.4 2 1 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 1 6 .1 0 (.6 3 4) 1 5 .9 0 (.6 2 6) F E ED D IR E C TIO N 27 .40 (1 .079 ) 23 .90 (.9 41) 13 .50 ( .53 2) 12 .80 ( .50 4) 4 330.00 (14.173) MAX. 60 .00 (2.362) M IN . NO T ES : 1. C O M FO R M S TO E IA -4 18. 2. C O N TR O LL IN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U TE R E D G E . 30 .40 (1 .19 7) M AX . 26.40 (1.039) 24.40 (.961) 4 3 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 5.0µH RG = 25Ω, IAS = 8.4A. (See Figure 12) ISD ≤ 8.4A, di/dt ≤ 378A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . This is only applied to TO-220AB package. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint & soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the (IRF644N) automotive [Q101] & (IRF644NS/L) industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 www.irf.com 11