PD - 95336A IRF7910PbF HEXFET® Power MOSFET Applications l l l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications Power Management for Netcom, Computing and Portable Applications Lead-Free Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 12V 15mΩ @VGS = 4.5V 10A 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 SO-8 Top View Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 12 ± 12 10 7.9 79 2.0 1.3 16 -55 to + 150 V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units ––– ––– 42 62.5 °C/W Notes through are on page 8 www.irf.com 1 07/21/08 IRF7910PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 12 ––– ––– ––– 0.6 ––– ––– ––– ––– Typ. ––– 0.01 11.5 20 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 15 VGS = 4.5V, ID = 8.0A mΩ 50 VGS = 2.8V, ID = 5.0A 2.0 V VDS = VGS, ID = 250µA 100 VDS = 9.6V, VGS = 0V µA 250 VDS = 9.6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 18 ––– ––– S VDS = 6.0V, ID = 8.0A ––– 17 26 ID = 8.0A ––– 4.4 ––– nC VDS = 6.0V ––– 5.2 ––– VGS = 4.5V ––– 16 ––– VGS = 0V, VDS = 10V ––– 9.4 ––– VDD = 6.0V ––– 22 ––– ID = 8.0A ns ––– 16 ––– RG = 1.8Ω ––– 6.3 ––– VGS = 4.5V ––– 1730 ––– VGS = 0V ––– 1340 ––– VDS = 6.0V ––– 330 ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units ––– ––– 100 8.0 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 1.8 ––– ––– 79 ––– ––– ––– ––– ––– ––– 0.85 0.70 50 60 51 60 1.3 ––– 75 90 77 90 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V TJ = 125°C, IS = 8.0A, VGS = 0V TJ = 25°C, IF = 8.0A, VR =12V di/dt = 100A/µs TJ = 125°C, IF = 8.0A, VR =12V di/dt = 100A/µs www.irf.com IRF7910PbF 1000 10 VGS 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V TOP 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 1000 VGS 1 1.5V 0.1 20µs PULSE WIDTH Tj = 25°C 100 10 1.5V 1 20µs PULSE WIDTH Tj = 150°C 0.1 0.01 0.1 1 0.1 10 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 T J = 150°C 10 TJ = 25°C VDS = 10V 20µs PULSE WIDTH 1.0 2.0 3.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 4.0 I D = 10A 1.5 (Normalized) R DS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) 100 1 10 1.0 0.5 V GS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7910PbF 10000 12 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED C, Capacitance (pF) Crss = Cgd Coss = Cds + Cgd Ciss Coss 1000 Crss ID= 8.0A 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 13 0 100 1 10 0 100 10 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100.0 T J = 150°C 10 1 0.1 0.5 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec VGS = 0V 0.0 40 100 T J = 25°C 1.0 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10.0 20 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 9.6V VDS= 6.0V 10 2.0 1msec Tc = 25°C Tj = 150°C Single Pulse 0 10msec 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7910PbF 10.0 VDS VGS 8.0 D.U.T. RG ID , Drain Current (A) RD + -V DD 6.0 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 (Z thJA) D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 J = P DM x Z thJA 1 +T A 10 100 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.0145 RDS(on) , Drain-to -Source On Resistance ( Ω) RDS (on) , Drain-to-Source On Resistance ( Ω) IRF7910PbF 0.0140 0.0135 VGS = 4.5V 0.0130 0.0125 0.0120 0 20 40 60 80 0.020 0.018 0.015 ID = 8.0A 0.013 0.010 2.5 100 3.5 4.5 5.5 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS 50KΩ 12V .2µF QGS .3µF D.U.T. + V - DS QGD 250 ID VG TOP VGS 3mA Charge 200 ID EAS , Single Pulse Avalanche Energy (mJ) IG Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A BOTTOM 3.6A 6.4A 8.0A 150 100 50 0 25 50 75 100 Starting T , Junction Temperature J 125 150 ( °C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7910PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;F ;/ & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(<:: 3 ',6*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRF7910PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 3.2mH RG = 25Ω, IAS = 8.0A. Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t<10 sec Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2008 8 www.irf.com