PD - 9.1611A
IRFI1310N
PRELIMINARY
HEXFET® Power MOSFET
Advanced Process Technology
Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
D
l
VDSS = 100V
RDS(on) = 0.036Ω
G
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
ID = 24A
S
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
Units
24
17
140
56
0.37
± 20
420
22
5.6
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
2.7
65
°C/W
3/16/98
IRFI1310N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
56
45
40
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
1900
450
230
12
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.036
Ω
VGS = 10V, ID = 13A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 22A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
120
ID = 22A
15
nC VDS = 80V
58
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 22A
ns
–––
RG = 3.6Ω
–––
RD = 2.9Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
24
––– –––
showing the
A
G
integral reverse
––– ––– 140
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 13A, VGS = 0V
––– 180 270
ns
TJ = 25°C, IF = 22A
––– 1.2 1.8
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.0mH
t=60s, ƒ=60Hz
RG = 25Ω, IAS = 22A. (See Figure 12)
ISD ≤ 22A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRF1310N data and test conditions
IRFI1310N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
10
4.5V
20us PULSE WIDTH
TJ = 25 oC
1
0.1
1
10
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 o C
TJ = 175 o C
10
6.0
7.0
8.0
9.0
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
3.0
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
1000
5.0
20us PULSE WIDTH
TJ = 175 o C
1
0.1
Fig 1. Typical Output Characteristics
100
4.5V
10
VDS , Drain-to-Source Voltage (V)
1
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10.0
ID = 36A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (o C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI1310N
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2500
Ciss
2000
1500
Coss
1000
Crss
500
ID = 22A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
20
40
60
80
100
120
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
I D , Drain Current (A)
C, Capacitance (pF)
3000
20
VGS , Gate-to-Source Voltage (V)
3500
10us
100
10
100us
10
1ms
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1.6
10ms
TC = 25 o C
TJ = 175 o C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1000
IRFI1310N
25
RD
VDS
VGS
I D , Drain Current (A)
20
D.U.T.
RG
+
-VDD
15
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
P DM
0.02
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRFI1310N
1 5V
L
VD S
D R IV E R
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
1000
TOP
800
BOTTOM
600
400
200
0
25
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
175
Starting TJ , Junction Temperature o( C)
V (B R )D S S
tp
ID
9.0A
16A
22A
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFI1310N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFI1310N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
ø
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
-A3.70 (.145)
3.20 (.126)
16.00 (.630)
15.80 (.622)
2.80 (.110)
2.60 (.102)
LE A D A S S IG N ME N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
7.10 (.280)
6.70 (.263)
1.15 (.045)
M IN .
NOTES:
1 D IME N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982
1
2
3
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
A
1.40 (.055)
3X
1.05 (.042)
0.90 (.035)
3X 0.70 (.028)
0.25 (.010)
2.54 (.100)
2X
3X
M
A M
B
0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
D
B
M IN IM U M C R E E P A G E
D IS TA N C E B E TW E E N
A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X AEMXPALMEP: L ETH
1 0F1I8
0 40G
: IST HIS
IS AISN AIR
N F IR
W ITH
A S SAESMS BE LMYB L Y
W ITH
L O TL OCTO DCEO D9EB 1EM4 0 1
A
IN TE R N A T IO N A L
IN T E R N A T IO N A L
R E C TIF IE R
IRIRFF1I8
0 1400 G
R E C T IF IE R
LOGO
9
246
LOGO
9 BE 40 1 192M45
A SASSESM
B LBYL Y
EM
L OL TO T C O
DD
EE
CO
P A R T N U M B E RA
PART NUMBER
D A TE C O D E
(YDYAW
T EW )C O D E
Y(Y
Y Y=W YWE)A R
Y == YE
RK
WYW
W EA E
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
3/98