IRF IRFI540NPBF

PD - 94833
IRFI540NPbF
HEXFET® Power MOSFET
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Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS …
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
D
VDSS = 100V
RDS(on) = 0.052Ω
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
ID = 20A
S
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚†
Avalanche Current†
Repetitive Avalanche Current
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
20
14
110
54
0.36
±20
300
16
5.4
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
2.8
65
°C/W
11/13/03
IRFI540NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
g fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.2
39
44
33
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
1400
330
170
12
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA†
0.052
Ω
VGS = 10V, ID = 11A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 16A†
25
VDS = 100V, V GS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
94
ID = 16A
15
nC
VDS = 80V
43
VGS = 10V, See Fig. 6 and 13 „†
–––
VDD = 50V
–––
ID = 16A
ns
–––
RG = 5.1Ω
–––
RD = 3.0Ω, See Fig. 10 „†
Between lead,
–––
6mm (0.25in.)
nH
from package
–––
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5†
–––
ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
20
–––
–––
110
–––
–––
–––
–––
170
1.1
1.3
250
1.6
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V „
TJ = 25°C, IF = 16A
di/dt = 100A/µs „†
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ VDD = 25V, starting TJ = 25°C, L = 2.0mH
… t=60s, ƒ=60Hz
ƒ ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
† Uses IRF540N data and test conditions
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS = 16A. (See Figure 12)
TJ ≤ 175°C
D
G
S
IRFI540NPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
10
4.5V
20µs PULSE WIDTH
TC = 25°C
1
0.1
1
10
A
100
100
0.1
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 175°C
10
V DS = 50V
20µs PULSE WIDTH
7
8
9
10
100
A
Fig 2. Typical Output Characteristics
3.0
6
1
VDS , Drain-to-Source Voltage (V)
1000
5
20µs PULSE WIDTH
TC = 175°C
1
Fig 1. Typical Output Characteristics
1
4.5V
10
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
I D = 27A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI540NPbF
2400
V GS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
I D = 16A
V DS = 80V
V DS = 50V
V DS = 20V
16
1600
12
Coss
1200
800
Crss
400
0
1
10
100
A
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
A
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
8
100
TJ = 175°C
100
10µs
100µs
10
1ms
TJ = 25°C
VGS = 0V
10
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
100
A
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFI540NPbF
V GS
ID , Drain Current (A)
RD
VDS
20
RG
15
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRFI540NPbF
D.U.T.
RG
+
-
VDD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
700
TOP
600
BOTTOM
ID
6.6A
11A
16A
500
400
300
200
100
0
VDD = 25V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
A
175
IRFI540NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFI540NPbF
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
E XAMP L E :
T H IS IS AN IR F I840G
WIT H AS S E MB L Y
L OT COD E 3432
AS S E MB L E D ON WW 24 1999
IN T H E AS S E MB L Y L IN E "K "
Note: "P" in assembly line
position indicates "Lead-Free"
IN T E R N AT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E
P AR T N U MB E R
IR F I840G
924K
34
32
DAT E CODE
YE AR 9 = 1999
WE E K 24
L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03