Data Sheet No. PD 96952A IRIS-W6754 INTEGRATED SWITCHER Features • 6-pin SIP type full molded package, optimum IC for low-height SMPS, distance between high and low voltage pins is 1.8 mm with pin elimination. Package Outline • Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (100uA max) •Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. • Built-in constant voltage drive circuit • Built-in step drive circuit • Built-in low frequency PWM mode (≒22 kHz) • UVLO Burst Standby TO-220 Fullpack (7 Lead modified) • Two operational modes by auto switching functions according to load For middle~heavy load operation : QR mode For light~middle load operation : 1 Bottom Skip mode Key Specifications • Various kinds of protection functions MOSFET RDS(ON) Pout(W) Pulse-by-Pulse Overcurrent Protection (OCP) T ype VDSS(V) MAX AC input(V) Note 1 Overvoltage Protection with Latch mode (OVP) 230 15% 160 ± Overload Protection with Latch mode (OLP) IRIS-W6754 650 85 to 264 100 The maximum limit of on-time 0.96Ω Description IRIS-W6754 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Typical Connection Diagram IRIS-W6754 O CP / BD FB SS / O LP Vcc S/ G ND D Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to 140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that of the above. www.irf.com IRIS-W6754 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition IDpeak Drain Current * 1 IDMAX EAS Vcc VSSOLP IFB VFB VOCPBD P D1 P D2 TF Top Tstg Tch Terminal s Max. Ratings 1-3 15 Units A Note Single Pulse Maximum switching current *2 1-3 15 A Ta=-20~+125℃ Single pulse avalanche energy *3 1-3 292 mJ Single Pulse VDD=99V,L=20mH ILpeak=5.1A Input voltage for control part SS/OLP pin voltage 4-3 5-3 35 -0.5 ~ 6.0 V V FB pin inflow current 6- 3 10 mA FB pin voltage 6- 3 -0.5 ~ 9.0 V O.C.P/F.B pin voltage 7- 3 V Power dissipation of MOSFET *4 1-3 -1.5 ~ 5.0 28.0 1.1 Power dissipation for control part (MIC) Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature W 4-3 0.8 W - -20 ~ +115 ℃ - -20 ~ +115 -40 ~ +125 150 ℃ ℃ ℃ within the limits of IFB With infinite heatsink Without heatsink Specified by Vcc x Icc Refer to recommended operating temperature *1 Refer to MOS FET A.S.O. curve *2 Maximum switching current The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET. *3 Refer to MOS FET Tch-EAS curve *4 Refer to MOS FET Ta-PD1 curve www.irf.com IRIS-W6754 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Ratings Symbol Definition Terminals MIN TYP MAX Units Note Power Supply Start-up Operation VCC(ON) Operation Start Voltage 4-3 16.3 18.2 19.9 V Vcc=0→19.9V VCC(OFF) Operation Stop Voltage 4-3 8.8 9.7 10.6 V Vcc=19.9→8.8 V ICC(ON) Circuit Current in Operation 4-3 - - 6 mA - ICC(OFF) Circuit Current in Non-Operation 4-3 - - 100 µA Vcc=15V Oscillation Frequency 1-3 19 22 25 kHz - VSSOLP(SS) Soft Start Operation Stop Voltage 5-3 1.1 1.2 1.4 V - ISSOLP(SS) Soft Start Operation Charging Current 5-3 -710 -550 -390 µA - fosc Normal Operation VOCPBD(BS1) Bottom-Skip Operation Threshold Voltage1 7-3 -0.72 -0.665 -0.605 V - VOCPBD(BS2) Bottom-Skip Operation Threshold Voltage2 7-3 -0.485 -0.435 -0.385 V - VOCPBD(LIM) Overcurrent Detection Threshold Voltage 7-3 -0.995 -0.94 -0.895 V - OCP/BD Pin Outflow Current 7-3 -250 -100 -40 µA - VOCPBD(TH1) Quasi-Resonant Operation Threshold Voltage 1 7-3 0.28 0.4 0.52 V - VOCPBD(TH2) Quasi-Resonant Operation Threshold Voltage 2 7-3 0.67 0.8 0.93 V - FB Pin Threshold Voltage 6-3 1.32 1.45 1.58 V - FB Pin Inflow Current (Normal Operation) 6-3 600 1000 1400 µA - IOCPBD VFB(OFF) IFB(ON) www.irf.com IRIS-W6754 Electrical Characteristics (for Control IC), Contd. Stand-by Operation VCC(S) Stand-by Operation Start Voltage 4-3 10.3 11.1 12.1 V Vcc=0→12.2V VCC(SK) Stand-by Operation Start Voltage Interval 4-3 1.1 1.35 1.65 V - ICC(S) Stand-by Non-Operation Circuit Current 4-3 - 20 56 µA Vcc=10.2V IFB(S) FB Pin Inflow Current (Stand-by) 6-3 - 4 14 µA Vcc=10.2V VFB(S) Stand-by Operation FB Pin Threshold Voltage 6-3 0.55 1.1 1.5 V Vcc=12.2V Minimum ON Time 1-3 0.5 0.8 1.1 µSec - Maximum ON Time 1-3 27.5 32.5 39 µSec - VSSOLP(OLP) OLP Operation Threshold Voltage 5-3 4 4.9 5.8 V - ISSOLP(OLP) OLP Operation Charging Current 5-3 -16 -11 -6 µA - OVP Operation Voltage 4-3 25.5 27.7 29.9 V Vcc=0→29.9V 4-3 -- 45 140 µA 4-3 6 7.2 8.5 V TON(MIN) Protection Operation TON(MAX) VCC(OVP) ICC(H) VCC(La.OFF) Latch Circuit Holding Current *5 Latch Circuit Release Voltage *5 Vcc=29.9→ VCC(OFF)-0.3V Vcc=29.9→6V *5 The latch circuit means a circuit operated O.V.P and O.L.P. *6 The current ratings are based on those of the IC , and plus(+) represents sink and minas(-) represents source. www.irf.com IRIS-W6754 Electrical characteristics for MOSFET (Ta=25 deg C) Ratings Symbol Definition Terminals VDSS Drain-to-Source breakdown voltage IDSS Note TYP MAX 1-3 650 - - V ID=300µA Drain leakage current 1-3 - - 300 µA VDS=650V RDS(ON) On-resistance 1-3 - - 0.96 Ω ID=1.9A tf Switching time 1-3 - - 400 nSec - θch-F Thermal resistance - - - 1.6 ℃/W Between channel and internal frame IRIS-W6754 MOS FET A.S.O. curve IRIS-W6754 A.S.O. temperature derating coefficient curve Ta=25ºC Single Pulse 100 100 Drain current limit by ON resistance 80 Drain Current ID[A] A.S.O. temperature derating coefficient[%] Units MIN 60 40 10 0.1ms 1ms 1 20 0 0.1 0 20 40 60 80 100 Internal frame temperature TF℃] [ 120 10 100 1000 Drain-to-Source Voltage VDS[V] www.irf.com IRIS-W6754 IRIS-W6754 MOSFET Ta-PD1 Curve 30 IRIS-W6754 Avalanche energy derating curve 100 PD1=28[W] EAS temperature derating coefficient [%] 20 With infinite heatsink 15 10 Without heatsink 5 80 60 40 20 PD1=1.1[W] 0 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[℃] 25 50 75 100 Channel temperature Tch [ 125 150 ℃] IRIS-W6754 Transient thermal resistance curve 10 Transient thermal resistance θch-c [℃/W] Power dissipation PD1[W] 25 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m Time ｔ[sec] www.irf.com IRIS-W6754 Block Diagram ４ VCC ＋ Reg& Iconst － Start Stop Burst OVP R １ Delay Q Burst Control D DRIVE Reg Protection latch S S/GND FB R Q S Q S R OSC MaxON ＋ － OLP BSD FB ６ － ＋ OCP － ＋ BD Bottom Selector Soft Start ＋ － ３ ＋ － Counter OCP/BD SS/OLP ７ ５ Pin Designation Pin Assignments Pin No. Symbols Descriptions Functions 1 D Drain pin MOSFET drain 3 S/GND Source /Ground pin MOSFET Source / Ground 4 VCC Power supply pin Input of power supply for control circuit 5 SS/OLP Delay at Overload /Soft Start set up Pin Overload Protection and Soft Start Operation Time set up 6 FB Feedback pin Constant Voltage Control Signal Input, Burst(intermittent) mode Oscillation Control 7 OCP/BD Overcurrent Protection Input / Bottom Detection Pin Overcurrent Detection Signal Input /Bottom Detection Signal Input IRIS D S/GND Vcc SS/OLP FB OCP/BD 1 3 4 5 6 7 www.irf.com IRIS-W6754 Case Outline 10.0±0.2 0.5 4.2±0.2 φ3.2 IRIS ±0.1 16.9±0.3 7.9±0.2 2.8±0.2 4 ±0.2 gate burr a b 5 ±0.5 6-0.74±0.15 +0.2 (5.4) R-end 1) -R (2 6-0.65-0.1 10.4±0.5 2.8 2.6±0.1 Weight : Approx. 2.3g Dimensions in mm DWG.No. TG3A-2103 +0.2 0.45-0.1 6xP1.27±0.15=7.62±0.15 a Type Number W6754 b Lot Number 1st letter The last digit of year 2nd letter Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter Day Arabic Numerals 5th letter : Registration Symbol 5.08±0.6 0.5 1 2 3 4 5 6 7 0.5 0.5 0.5 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com