IRF IRKL500-08

Bulletin I27401 rev. A 09/97
IRK.500.. SERIES
SUPER MAGN-A-pak TM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
500 A
High current capability
3000 V RMS isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters
IRK.500..
Units
I T(AV) or I F(AV)
500
A
82
°C
@ TC
I T(RMS)
@ TC
I TSM or IFSM @ 50Hz
I 2t
785
A
82
°C
17.8
KA
@ 60Hz
18.7
KA
@ 50Hz
1591
KA 2s
@ 60Hz
1452
KA 2s
15910
KA2√s
800 to 1600
V
I 2√t
VDRM/V RRM range
T STG
range
- 40 to 150
°C
TJ
range
- 40 to 130
°C
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1
IRK.500.. Series
Bulletin I27401 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
VRRM/VDRM, maximum repetitive
peak reverse voltage
V
VRSM , maximum nonrepetitive peak rev. voltage
V
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
IRK.500..
IRRM/IDRM max.
@ T J = TJ max.
mA
100
On-state Conduction
Parameter
IRK.500..
Units Conditions
IT(AV)
Maximum average on-state current
500
A
IF(AV)
@ Case temperature
82
°C
IT(RMS)
Maximum RMS on-state current
785
A
ITSM
Maximum peak, one-cycle,
17.8
KA
t = 10ms
No voltage
IFSM
non-repetitive surge current
18.7
t = 8.3ms
reapplied
15.0
t = 10ms
100% VRRM
15.7
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = TJ max.
t = 8.3ms
reapplied
1125
t = 10ms
100% VRRM
1027
t = 8.3ms
reapplied
I2 t
Maximum I2t for fusing
1591
KA 2s
1452
I2 √t
Maximum I2√t for fusing
15910
VT(TO)1 Low level value of threshold voltage
0.85
VT(TO)2 High level value of threshold voltage
0.93
180° conduction, half sine wave
180° conduction, half sine wave @ TC = 82°C
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x π x I T(AV) < I < π x IT(AV) ), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
(16.7% x π x I T(AV) < I < π x IT(AV) ), TJ = TJ max.
rt1
Low level value of on-state slope resistance
0.36
rt2
High level value of on-state slope resistance
0.32
VTM
Maximum on-state or forward
1.50
V
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
VFM
voltage drop
IH
Maximum holding current
500
mA
TJ = 25°C, anode supply 12V resistive load
IL
Typical latching current
(I > π x IT(AV)), TJ = TJ max.
1000
Switching
Parameter
di/dt
Maximum rate of rise of turned-on
IRK.500..
Units Conditions
1000
A/µs
TJ = TJ max., ITM = 400A, VDRM applied
current
td
Typical delay time
2.0
µs
t
Typical turn-off time
200
µs
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
q
ITM = 750A, TJ = T J max, di/dt = -60A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
2
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Blocking
Parameter
dv/dt
IRK.500..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 130°C., linear to VD = 80% VDRM
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
3000
V
100
mA
t=1s
TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
IRK.500..
Units Conditions
PGM
Maximum peak gate power
10
W
PG(AV)
Maximum peak average gate power
2.0
W
TJ = TJ max., tp < 5ms
TJ = TJ max., f = 50Hz, d% = 50
+ IGM
Maximum peak positive gate current
3.0
A
TJ = TJ max., tp < 5ms
V
+ V GM
Maximum peak positive gate voltage
20
- VGM
Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
200
mA
TJ = 25°C Vak 12V
VGT
DC gate voltage required to trigger
3.0
V
TJ = 25°C Vak 12V
IGD
DC gate current not to trigger
10
mA
VGD
DC gate voltage not to trigger
0.25
V
TJ = TJ max.
Thermal and Mechanical Specifications
Parameter
IRK.500..
TJ
Max. junction operating temperature range
- 40 to 130
T stg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
Units Conditions
°C
0.065
K/W
0.02
K/W
6-8
Nm
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10% SMAP to heatsink
wt
Approximate weight
busbar to SMAP
Case style
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12 - 15
1500
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
g
SUPER MAGN-A-pak
See outline table
3
IRK.500.. Series
Bulletin I27401 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
IRK
T
500
1
2
3
-
16
4
1
-
Module type
2
-
Circuit configuration (See Circuit Configurations Table)
3
-
Current rating
4
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
1
1
~
+
2
3 -
~
~
+
+
2
2
3 -
3 -
4(K1) 7(K2)
4(K1)
7(K2)
5(G1) 6(G2)
5(G1)
6(G2)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Outline Table
130
IRK.500.. Series
R thJC (DC) = 0.065 K/W
120
110
Conduction Angle
100
90
30°
80
60°
90°
120°
70
180°
60
0
100
200
300
400
500
600
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
All dimensions in millimeters (inches)
130
IRK.500.. Series
R thJC (DC) = 0.065 K/W
120
110
100
Conduction Period
90
80
30°
70
60°
90°
120°
180°
DC
60
0
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.500.. Series
180°
120°
90°
60°
30°
600
500
400
RMS Limit
300
Conduction Angle
200
IRK.500.. Series
Per Junction
T J= 130°C
100
0
0
100
200
300
400
500
Maximum Average On-state Power Loss (W)
700
1000
DC
180°
120°
90°
60°
30°
900
800
700
600
500
400 RMS Limit
Conduction Period
300
IRK.500.. Series
Per Junction
T J = 130°C
200
100
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
16000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 130°C
15000
14000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
13000
12000
11000
10000
9000
IRK.500.. Series
Per Junction
8000
7000
1
10
18000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I27401 rev. A 09/97
16000
14000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 130°C
No Voltage Reapplied
Rated VRRMReapplied
12000
10000
8000
IRK.500.. Series
Per Junction
6000
0.01
100
0.1
Fig. 6 - Maximum Non-Repetitive Surge Current
09
SA
=
W
K/
W
K/
h
Rt
0.
750
700
180°
650
120°
0.
16
90°
600
K
/W
60°
550
0.
2
30°
K
500 Conduction Angle
/W
450
400
0 .3
K/W
350
0.4
300
K/W
250
0.6
K
/W
200
150
IRK.500.. Series
100
Per Module
TJ = 130°C
50
0
0 100 200 300 400 500 600 700 800
0
20
12
0.
07
0.
W
K/
-D
ta
el
R
Maximum Total On-state Power Loss (W)
Fig. 5 - Maximum Non-Repetitive Surge Current
Total RMS Output Current (A)
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Puls es (N)
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
6
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
0.
02
K/
W
0.12
0.0
8
2 x IRK.500.. Series
Single Phase Bridge
Connected
T = 130°C
500
R
1000
lta
e
0.0
5K
/W
-D
1500
W
K/
K/
W
01
0.
2000
=
0.
03
A
180°
(Sine)
180°
(Rect)
2500
hS
Rt
Maximum Total Power Loss (W)
3000
K/W
K/W
0.2 K
/W
J
0
0
200
400
600
800
0
1000
Total Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
R
4000
120°
(Rect)
3500
SA
th
Maximum Total Power Loss (W)
4500
0.
0
3000
2
0.
03
2500
2000
=
0.
01
K/
W
K/
W
K/
W
-D
elt
a
R
0 .0
5K
1500
3 x IRK.500.. Series
Three Phase Bridge
Connected
T J = 130°C
1000
500
/W
0.0
8 K/
W
0.2 K/W
0
0
250
500
750
1000
1250 1500
0
Total Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
Transient Thermal Impedance Z thJC (K/W)
Instantaneous On-state Current (A)
10000
T J= 25°C
1000
T J= 130°C
IRK.500.. Series
Per Junction
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.1
IRK.500.. Series
Per Junction
0.01
Steady State Value:
R thJC = 0.065 K/W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 10 - On-state Voltage Drop Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
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IRK.500.. Series
Bulletin I27401 rev. A 09/97
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(1)
(2)
(3)
(4)
PGM = 10W,
PGM = 20W,
PGM = 40W,
PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
VGD
IGD
0.1
0.001
0.01
Tj=-40 °C
1
Tj=25 °C
Tj=130 °C
Instantaneous Gate Voltage (V)
100
(1)
IRK.500.. Series
0.1
(2)
(3) (4)
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
8
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