IXFA7N100P IXFP7N100P Polar TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 7A ≤ 1.9Ω Ω TO-263 AA (IXFA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 7 A IDM TC = 25°C, Pulse Width Limited by TJM 18 A IA TC = 25°C 7 A EAS TC = 25°C 300 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.5 3.0 g g (TO-220) G S D (Tab) TO-220AB (IXFP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ±30V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS= 0V 15 μA 1.0 mA RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 z z V 6.0 V Applications z z z 1.9 Ω z z © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99924A(10/09) IXFA7N100P IXFP7N100P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS= 20V, ID = 0.5 • ID25, Note 1 3.6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 6.0 S 1.8 Ω 2590 pF 158 pF 26 pF 25 ns 49 ns 42 ns 44 ns 47 nC 21 nC 21 RthJC RthCS TO-220 TO-263 (IXFA) Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. nC A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 0.42 °C/W c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 °C/W D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 7 A Repetitive, pulse width limited by TJM 28 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 3.5A, -di/dt = 100A/μs 300 ns μC A 0.4 4.0 VR = 100V TO-220 (IXFP) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA7N100P IXFP7N100P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 7 14 VGS = 10V 8V 6 5 10 7V ID - Amperes ID - Amperes VGS = 10V 8V 12 4 3 2 8 7V 6 4 6V 1 6V 2 5V 5V 0 0 0 2 4 6 8 10 12 14 0 5 10 15 25 30 35 Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 7 3.0 VGS = 10V 8V 5 7V 4 3 VGS = 10V 2.6 R DS(on) - Normalized 6 ID - Amperes 20 VDS - Volts VDS - Volts 6V 2.2 I D = 7A 1.8 I D = 3.5A 1.4 1.0 2 1 0.6 5V 0.2 0 0 3 6 9 12 15 18 21 24 -50 27 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 8.0 VGS = 10V 2.4 7.0 TJ = 125ºC 6.0 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 5.0 4.0 3.0 1.4 2.0 1.2 TJ = 25ºC 1.0 1.0 0.8 0.0 0 2 4 6 8 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 10 12 14 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA7N100P IXFP7N100P Fig. 7. Input Admittance Fig. 8. Transconductance 14 14 12 12 TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 25ºC 10 g f s - Siemens ID - Amperes 10 8 6 8 125ºC 6 4 4 2 2 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 Fig. 10. Gate Charge 30 16 VDS = 500V 14 I D = 3.5A 25 I G = 10mA 12 20 VGS - Volts IS - Amperes 8 ID - Amperes 15 8 6 TJ = 125ºC 10 10 4 TJ = 25ºC 5 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 10 VSD - Volts 20 30 40 50 60 70 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 10,000 f = 1 MHz 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_7N100P(56)9-16-08