The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 October 2001. INCH-POUND MIL-PRF-19500/455D 31 July 2001 SUPERSEDING MIL-PRF-19500/455C 25 January 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, AND 2N5667S, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-66), figure 2 (TO-5), figure 3 (surface mount), and figure 4 (JANHC, JANKC). 1.3 Maximum ratings. Type 2N5664 2N5665 2N5666, S, U3 2N5667, S (1) (2) (3) (4) PT TA = +25°C PT TC = +100°C VCBO VCEO VEBO IC IB Tstg and Top W W V dc V dc V dc A dc A dc °C 250 400 250 400 200 300 200 300 6 6 6 6 5 5 5 5 1 1 1 1 -65 to +200 -65 to +200 -65 to +200 -65 to +200 2.5 2.5 1.2 1.2 (1) (1) (3) (3) 30 30 15 15 (2) (2) (4) (4) Derate linearly 14.3 mW/°C for TA > +25°C. Derate linearly 300 mW/°C for TC > +100°C . Derate linearly 6.9 mW/°C for TA > +25°C. Derate linearly 150 mW/°C for TC > +100°C . Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/455D 1.4 Primary electrical characteristics at TA = +25°C. hFE VCE = 5 V IC = 1 A Limits 2N5665 2N5667, S Min Max 2N5664 2N5666, S, U3 25 75 |hfe| VBE(sat) VCE = 5 V IC = 3 A IC = 0.5 A dc dc (1) f = 10 MHz 40 120 2.0 7.0 VCE(sat) IC = 3 A dc (1) IC ton =1A dc Pulse response toff IC = 1 A dc 2N5664 2N5666, S, U3 2N5665 2N5667, S V dc V dc µs µs µs 1.2 0.4 0.25 1.5 2.0 (1) IB = 0.3 A dc for 2N5664, 2N5666, 2N5666S, 2N5666U3; IB = 0.6 A dc for 2N5665, 2N5667, 2N5667S. Type RθJC °C/W (max) 2N5664, 2N5665 2N5666, 2N5667 2N5666S, 2N5667S, 2N5666U3 3.3 6.7 6.7 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/455D Dimensions Ltr Inches Min CD Max Millimeters Min .620 Max 15.75 3 CD1 .470 .500 11.94 12.70 CH .250 .340 6.35 8.64 3 8.89 6 HR .350 HR1 .115 .145 2.92 3.68 HT .050 .075 1.27 1.91 3 1.27 3 HT1 .050 LD .028 .034 .711 .863 5, 9 LL .360 .500 9.14 12.70 5, 9 1.27 4 7 L1 .050 MHD .142 .152 3.62 3.86 MHS .958 .962 24.33 24.43 NOTES: 1. Dimensions are in inches. PS .190 .210 4.83 2. Metric equivalents are given for general information only. PS1 .093 .107 2.36 3. Body contour is optional within zone defined by LD and CD. S1 .570 .590 14.48 4. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. The collector shall be electrically connected to the case. 9. LD applies between L1 and LL. Diameter is uncontrolled in L1. FIGURE 1. Physical dimensions of transistor types 2N5664 and 2N5665. 3 Notes 5.33 4 2.72 4 14.99 MIL-PRF-19500/455D Dimensions Ltr Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC LD .1414 Nom .016 LL .021 3.59 Nom 0.41 0.53 Notes 6 3 See notes 13 and 14 L1 .050 L2 .250 LU .016 P .100 1.27 6.35 .019 0.41 10 10 0.48 2.54 Q 4 5 6 NOTES: 1. Dimensions are in inches. r .007 0.18 2. Metric equivalents are given for general information only. TL .029 .045 0.74 1.14 3. Measured in the zone beyond .250 inches (6.35 mm) from the seating plane. TW 0.28 .034 0.71 0.86 4. Measured in the zone .050 inches (1.27 mm) and .250 inches (6.35 mm) from the seating plane. 5. Variations on dimension CD in this zone shall not exceed .010 inches (0.25 mm). 6. Outline in this zone is not controlled. 7. When measured in a gauging plane .054 inches +.001, -.000 (1.37 mm +.03, -.00 ) below the seating plane of the transistor, maximum diameter leads shall be within .007 inches (.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 8. The collector shall be electrically connected to the case. 9. Measured from the maximum diameter of the actual device. 10. All three leads 11. Diameter of leads in this zone is not controlled. 12. Lead 1 - Emitter; lead 2 - Base, lead 3 - Collector. 13. For transistor types 2N5666 and 2N5667, LL is 1.500 inches (38.1 mm) minimum and 1.75 inches (44.45 mm) maximum. 14. For transistor types 2N5666S and 2N5667S, LL is .500 inches (12.7 mm) minimum and .75 inches (19.05 mm) maximum. FIGURE 2. Physical dimensions of transistor types 2N5666, 2N5666S, 2N5667 and 2N5667S. 4 MIL-PRF-19500/455D SCHEMATIC 1 2 3 Symbol Dimensions Inches BL BW CH LH LW1 LW2 LL1 LL2 LS1 LS2 Q1 Q2 Min .395 .291 .1085 .010 .281 .090 .220 .115 Millimeters Max .405 .301 .1205 .020 .291 .100 .230 .125 Min 10.04 7.40 2.76 0.25 7.14 2.29 5.59 2.93 .150 BSC .075 BSC Max 10.28 7.64 3.06 0.51 7.41 2.54 5.84 3.17 3.81 BSC 1.91 BSC .030 .030 0.762 0.762 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimensions and tolerances shall be in accordance with ANSI Y14.5M-1982. 4. Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter. FIGURE 3. Physical dimensions, surface mount (2N5666U3 version). 5 MIL-PRF-19500/455D 1. 2. 3. 4. Chip size: Chip thickness: Top metal: Back metal: 5. Backside: 6. Bonding pad: 120 x 120 mils ± 2 mils 10 ± 1.5 mils nominal Aluminum 30,000Å minimum, 33,000Å nominal A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅmin.15kÅ/5kÅ/10kÅ/10kÅ nom. B. Gold 2,500 minimum, 3,000Å nominal Collector B = 52 x 12 mils, E = 84 x 12 mils. FIGURE 4. JANHC and JANKC (A-version) die dimensions. 6 MIL-PRF-19500/455D 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-66), figure 2 (TO-5), figure 3 (surface mount), and figure 4 (JANHC, JANKC) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 7 MIL-PRF-19500/455D 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 9 ICES1 and hFE2 ICES1 11 ∆ICES1 and hFE2; ∆ICES1 = 100 percent of initial value or 10 nA dc, whichever is greater; ∆hFE2 = ± 15 percent. ICES1 and hFE2; ∆ICES1 = 100 percent of initial value or 20 nA dc, whichever is greater. 12 See 4.3.1 See 4.3.1 13 Subgroup 2 of table I herein; ∆ICES1 = +100 percent of initial value or 10 nA dc, whichever is greater. ∆hFE2 = ±15 percent. Subgroup 2 of table I herein; ∆ICES1 = +100 percent of initial value or 20 nA dc, whichever is greater. ∆hFE2 = ± 25 percent. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = + 187.5 ± 12.5°C, VCE = 100 V dc, TA ≤ + 100°C. Burn-in duration for lot acceptance for the JANKC level follows JANS requirements. Burn-in duration for lot acceptance for the JANHC level follows JANTX requirements. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100 percent probed to insure the assembled chips will meet the requirements of group A, subgroup 2. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 and table I herein. End-point electrical measurements shall be in accordance with group A, subgroup 2. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2. Delta measurements shall be in accordance with the steps in table II herein as specified in the notes for table II. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 30 V dc minimum, PT = 1.2 W (TO-5),. PT = 2.5 W (TO-66) minimum, TA = +25°C ± 3°C; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on devices shall be permitted. B5 1027 See 4.5.4 herein. B6 3131 See 4.5.2 herein. 8 MIL-PRF-19500/455D 4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1027 TJ = +187.5°C ± 12.5°C, VCE = 100 ± 5 V dc; TA = ≤ +100°C. B5 3131 See 4.5.2 herein. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2. Delta measurements shall be in accordance with the steps in table II herein as specified in the notes for table II. Subgroup C2 Method Condition 2036 Terminal strength (tension) 2N5664 and 2N5665 only: Test condition A, weight = 3 pounds, application time = 15 seconds. Terminal strength (lead fatigue) 2N5666, 2N5666S, 2N5667 and 2N5667S only: Test condition E (Not applicable to 2N5666U3). C6 1027 2N5664, 2N5666, 2N5666S, 2N5666U3: TC = +100 °C; PT = 30 W; VCE = 30 V dc. 2N5665, 2N5667 and 2N5667S, TA = +25°C; PT = 1.2 W; VCE = 40 V. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application: (1) 2N5664 and 2N5665, 0.833 A dc. (2) 2N5666, 2N5666S, 2N5666U3, 2N5667 and 2N5667S, 0.41 A dc. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature measuring point shall be the case. d. Reference temperature measuring point shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RθJC: 2N5664 and 2N5665 shall be 3.3°C/W; 2N5666, 2N5666S, 2N5666U3, 2N5667 and 2N5667S shall be 6.7°C/W. 9 MIL-PRF-19500/455D 4.5.3 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted at a case temperature (TC) of +25°C. 4.5.4 Group B accelerated life test. This test shall be conducted using one of the three options listed herein (a, b, or c) with the following conditions applying to all options: VCB = 30 V dc, 96 hours minimum, TJ = +275°C. a. TA = +150°C, maximum. b. PT = 2.5 W (TO-66); PT = 1.2 W (TO-5, U3 suffix), TA = +112°C or PT adjusted to give a lot average of TJ = +275°C. c. TA = +25°C +3 °C with PT adjusted to give a lot average of TJ = +275°C. 10 MIL-PRF-19500/455D TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Breakdown voltage collector to emitter 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S 3011 Bias condition B; IC = 10 mA dc, pulsed (see 4.5.1), R1 = 100 Ω Breakdown voltage emitter to base 3026 Bias condition D, IE = 10 µA dc, pulsed (see 4.5.1) Collector to emitter cutoff current 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S 3041 Bias condition C Collector to base cutoff current 2N5664, 2N5666, 2N5666S 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S 2N5665, 2N5667, 2N5667S 3036 Forward-current transfer ratio 3076 V(BR)CER V(BR)EBO 6 V dc 0.2 µA dc 0.1 1.0 0.1 1.0 µA dc mA dc µA dc mA dc VCE = 200 V dc VCE = 300 V dc Bias condition D VCB = 200 V dc VCB = 250 V dc VCB = 300 V dc VCE = 400 V dc ICBO VCE = 2 V dc, IC = 0.5 A dc pulsed (see 4.5.1) hFE1 40 25 3076 VCE = 5 V dc, IC = 1.0 A dc pulsed (see 4.5.1) hFE2 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Forward-current transfer ratio V dc V dc ICES1 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Forward-current transfer ratio 250 400 40 25 3076 VCE = 5 V dc, IC = 3.0 A dc pulsed (see 4.5.1) 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S hFE3 15 10 See footnotes at end of table. 11 120 75 MIL-PRF-19500/455D TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 5 A dc, pulsed (see 4.5.1) Collector-emitter saturation voltage 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S 3071 IC = 3.0 A dc, Collector-emitter saturation voltage 3071 Base-emitter saturation voltage 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S 3066 Base-emitter saturation voltage 3066 hFE4 5 VCE(sat)1 0.4 V dc IC = 5 A dc, IB = 1 A dc, pulsed (see 4.5.1) VCE(sat)2 3/ 1.0 V dc Test condition A, IC = 3.0 A dc, VBE(sat)1 3/ 1.2 V dc VBE(sat)2 1.5 V dc ICES2 100 µA dc IB = 0.3 A dc, pulsed (see 4.5.1) IB = 0.6 A dc, pulsed (see 4.5.1) IB = 0.3 A dc, pulsed (see 4.5.1) IB = 0.6 A dc, pulsed (see 4.5.1) Test condition A, IC = 5 A dc, IB = 1 A dc, pulsed (see 4.5.1) Subgroup 3 High-temperature operation: Collector to emitter cutoff current 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S TA = + 150°C 3041 VCE = 200 V dc VCE = 300 V dc Low-temperature operation Forward-current transfer ratio 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Bias condition C TA = -55°C 3076 VCE = 5 V dc, IC = 1.0 A dc, pulsed (see 4.5.1) hFE5 15 10 See footnotes at end of table. 12 MIL-PRF-19500/455D TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Method Symbol Conditions Limits Min Max 2.0 7.0 Unit Subgroup 4 Magnitude of common-emitter, small-signal short-circuit, forward-current, transfer ratio 3306 VCE = 5 V dc, IC = 0.5 A dc f = 10 MHz | hfe | Open-circuit output capacitance 3236 VCB = 10 V dc, 100 kHz ≤ f ≤ 1 MHz Cobo 120 pF 3251 Test condition A; IC = 1.0 A dc, VCC = 100 V dc See figure 5 See figure 6 ton 0.25 µs 3251 Test condition A; IC = 1.0 A dc, VCC = 100 V dc See figure 5 See figure 6 toff 1.5 2.0 µs µs Pulse response Turn-on time 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Turn-off time 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Subgroup 5 Safe operating area (continuous dc) (for types 2N5664 and 2N5665 only) Test #1 2N5664 and 2N5665 3051 TC = + 100°C, t ≥ 1 s, 1 cycle; tr + tf = 10 µs (see figure 7) VCE = 6 V dc, IC = 5 A dc Test #2 2N5664 and 2N5665 VCE = 40 V dc, IC = 0.75 A dc Test #3 2N5664 VCE = 200 V dc, IC = 43 mA dc Test #4 2N5665 VCE = 300 V dc, IC = 21 mA dc See footnotes at end of table. 13 MIL-PRF-19500/455D TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Method Conditions Symbol Limits Min Subgroup 5 - Continued Safe operating area (continuous dc) (for types 2N5666, 2N5666S, 2N5667, and 2N5667S 3051 TC = + 100°C, t ≥ 1 s, 1 cycle; tr + tf = 10 µs (see figure 8) Test #1 2N5666, 2N5666S, 2N5667, and 2N5667S VCE = 3.0 V dc, IC = 5 A dc Test #2 2N5666, 2N5666S, 2N5667, and 2N5667S VCE = 37.5 V dc, IC = 0.4 A dc Test #3 2N5666 and 2N5666S VCE = 200 V dc, IC = 27 mA dc Test #4 2N5667 and 2N5667S VCE = 300 V dc, IC = 14 mA dc Safe operating area (switching) 3053 Load condition B (clamped inductive load) (see figure 9); TC = + 100°C, tr + tf ≤ 10 µs, duty cycle ≤ 2 percent; tp = 4 ms; RS = 0.5 Ω, RBB1 = 50 Ω, VBB1 = 50 V dc RBB2 = 50 Ω, VBB2 = -4 V dc IC = 5 A dc, VCC = 50 V dc RL ≤ 2.5 Ω, L = 40 mH (Triad C48U or equivalent) 2N5664 2N5666 and 2N5666S Clamp voltage = 200 +0, -5 V dc 2N5665 2N5667 and 2N5667S Clamp voltage = 300 +0, -5 V dc End-point electrical measurements See table I, group A, subgroup 2 herein Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500 2/ Electrical characteristics for 2N5666U3 are identical to 2N5666 unless otherwise noted. 3/ Measured at less than 0.125 inch (3.175 mm) from case. 14 Max Unit MIL-PRF-19500/455D TABLE II. Groups B and C delta measurements. 1/ 2/ 3/ Steps Inspection 4/ MIL-STD-750 Method 1. 2. 1/ 2/ 3/ 4/ 5/ Collector to emitter cutoff current 3041 Conditions Base condition C 2N5664 2N5666, 2N5666S, 2N5666U3 VCE = 200 V dc 2N5665 2N5667, 2N5667S VCE = 300 V dc Forward-current transfer ratio 3076 Symbol VCE = 5 V dc, IC = 1.0 A dc pulsed (see 4.5.1) Limits Min Unit Max ∆ICES1 100 percent of initial value or 20 nA dc, whichever is greater. ∆hFE2 5/ ± 25 percent change from initial reading. The delta measurements for table VIa (JANS) of MIL-PRF-19500 are after subgroups 4 and 5, and consist of steps 1 and 2 of table II herein. The delta measurements for table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows: Subgroups 3 and 6, see table II herein, steps 1 and 2. The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table II herein, steps 1 and 2. See MIL-PRF-19500 for sampling plan. Measured at less than .125 inch (3.175 mm) from case. 15 MIL-PRF-19500/455D NOTES: 1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 15 ns, tf ≤ 15 ns, Zout = 50 ohm, PW = 10 µs, duty cycle ≤ 2 percent. 2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns, Zin ≥ 10 M Ω, Cin ≤ 11.5 pF. 3. Resistors shall be noninductive types. 4. The dc power supplies may require additional bypassing in order to minimize ringing. 5. The input pulse voltages and supply voltages (-4 V dc and + 100 V dc) are nominal and shall be adjusted to obtain IB1 = - IB2 = 30 mA and IC = 1 A. 6. An equivalent circuit may be used. 7. 0.02 µF capacitor may be removed during voltage adjustments. FIGURE 5. Pulse response test circuit for types 2N5664, 2N5666, 2N5666S, and 2N5666U3. 16 MIL-PRF-19500/455D NOTES: 1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 15 ns, tf ≤ 15 ns, Zout = 50 ohm, PW = 10 µs, duty cycle ≤ 2 percent. 2. Output waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns, Zin ≥ 10 MΩ, Cin ≤ 11.5 pF. 3. Resistors shall be noninductive types. 4. The dc power supplies may require additional bypassing in order to minimize ringing. 5. The input pulse voltages and supply voltages (-4 V dc and + 100 V dc) are nominal and shall be adjusted to obtain IB1 = - IB2 = 50 mA and IC = 1 A. 6. An equivalent circuit may be used. 7. 0.02 µF capacitor may be removed during voltage adjustments. FIGURE 6. Pulse response test circuit for types 2N5665, 2N5667 and 2N5667S. 17 MIL-PRF-19500/455D FIGURE 7. Maximum safe operating graph (continuous dc) for types 2N5664 and 2N5665. 18 MIL-PRF-19500/455D NOTE: Electrical characteristics for "S" and "U3" suffix devices are identical to their corresponding devices without the suffix. FIGURE 8. Maximum safe operating graph (continuous dc) for types 2N5666, 2N5666S, 2N5666U3, 2N5667, and 2N5667S. 19 MIL-PRF-19500/455D NOTE: Electrical characteristics for "S" and "U3" suffix devices are identical to their corresponding devices without the suffix. FIGURE 9. Safe operating area for switching between saturation and cutoff (clamped inductive load). 20 MIL-PRF-19500/455D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. The acquisition requirements are as specified in MIL-PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N5664) will be identified on the QML. Die ordering information (1) PIN Manufacturer 43611 2N5664 2N5665 2N5666 2N5667 JANHCA2N5664 JANHCA2N5665 JANHCA2N5666 JANHCA2N5667 (1) For JANKC level, replace JANHC with JANKC. 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - NW Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2445) Review activities: Army - AR, MI Navy - AS, MC Air Force - 19 21 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/455D 2. DOCUMENT DATE (YYMMDD) 31 July 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, AND 2N5667S, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact:Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99