INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 July, 2002. MIL-PRF-19500/350G 2 April 2002 SUPERSEDING MIL-PRF-19500/350F 18 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N3867, 2N3867S, 2N3868, AND 2N3868S JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistor. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO- 5, TO-39) for encapsulated devices, figures 2 and 3 for unencapsulated devices. * 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C. Types 2N3867, S 2N3868, S PT 1/ TA = +25°C PT 2/ TC = +25°C VCBO VCEO VEBO IC TSTG and TOP RθJC W W A dc °C °C/W 10 10 V dc min 40 60 V dc 1.0 1.0 V dc min 40 60 4.0 4.0 3.0 3.0 -65 to +200 -65 to +200 17.5 17.5 1/ Derate linearly 5.71 mW/°C for TA > +25°C. 2/ Derate linearly 5.71 mW/°C for TC > +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/350G 1.4 Primary electrical characteristics. hFE IC = 1.5 A dc VCE = 2 V dc IC = 3.0 A dc VCE = 5 V dc Cobo IE = 0 |hfe| IC = 100 mA dc VCB = 10 V dc 100 kHz ≤ f ≤ 1 MHz VCE = 5 V dc f = 20 MHz IC = 1.5 A dc IB = 150 mA dc IB = 150 mA dc ton 2N3867 2N3868 2N3867 2N3868 2N3867S 2N3868S 2N3867S 2N3968S Min Max 40 200 30 150 20 pF 20 120 VCE(sat)2 IC = 1.5 A dc toff ns max ns max 3 12 100 600 V dc 0.75 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/350G TO-5, 39 Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.12 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP 1, 2, 10, 12, 13, 14 Note 6 7 8,9 8,9 8,9 8,9 7 5 3,4 3 10 7 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39), dimension LL = .5 inches (12.70 mm) min. and .750 inches (19.05 mm) max FIGURE 1. Physical dimensions (similar to TO-5, T0-39). 3 MIL-PRF-19500/350G A version NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Unless otherwise specified, tolerance is ±.005 inch (0.13 mm). 4. The physical characteristics of the die are: Thickness: .008 inch (0.20 mm) minimum, .012 inch (0.30 mm) maximum. Top metal: Aluminum 25,000 Å nominal. Back metal: Gold 2,500 Å minimum, 3,000 Å nominal. Back side: Collector; Bonding pad: B = .045 inch (1.14 mm) x .008 inch (0.20 mm). E = .039 inch (0.99 mm) x .008 inch (0.20 mm). FIGURE 2. JANHCA and JANKCA die dimensions. 4 MIL-PRF-19500/350G B Version 1. 2. 3. 4. Chip size.............…040 x .040 inch ± .001 inch Chip thickness....…010 ± .0015 inch Top metal....….......Aluminum 15,000Å minimum, 18,000Å nominal Back metal...…..…A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min.,15kÅ/5kÅ/10kÅ/10kÅ nom. B. Gold 2,500Å minimum, 3,000Å nominal C. Eutectic Mount - No Gold 5. Backside...............Collector 6. Bonding pad..….....B = .006 x .008 inch, E = .006 x .004 inch FIGURE 3. JANHCB and JANKCB die dimensions. 5 MIL-PRF-19500/350G 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2 and 3 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4) and tables I, II, and III. 6 MIL-PRF-19500/350G 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II, the tests specified in table II herein it shall be performed by the first inspection lot processed to this revision to maintain qualification. * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV) and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 7 Hermetic seal (optional) (1) 9 ICBO2 and hFE4 Not applicable 10 24 hours minimum 24 hours minimum 11 ICEX1; hFE2; ∆ICEX1 100 percent of initial value or 200 nA dc, whichever is greater; ∆hFE2 = ± 15 percent of initial value. ICEX1; hFE2 12 See 4.3.2 240 hours minimum See 4.3.2 80 hours minimum 13 Subgroup 2 and 3 of table I herein; ∆ICEX1 100 percent of initial value or 200 nA dc, whichever is greater; ∆hFE2 = ± 15 percent of initial value. Subgroup 2 of table I herein; ∆ICEX1 100 percent of initial value or 200 nA dc, whichever is greater; ∆hFE2 = ± 15 percent of initial value. (1) Hermetic seal test shall be performed in screen 7. * 4.3.1. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2. Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc, TA = room ambient as defined in 4.5 of MIL-STD-750. Power shall be applied to the device to achieve a junction temperature, TJ = +135° C minimum and a minimum power dissipation = 75 percent of max PT as defined in 1.3. 7 MIL-PRF-19500/350G 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in VIa (JANS) and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein. 4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500. Subgroup Method * B4 1037 * B5 1027 Condition VCB = 10 V dc; 2,000 cycles. (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. B6 3131 RθJC = 17.5°C/W, see 4.5.2. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc. n = 45, C = 0. Power shall be applied to the device to achieve TJ ≥ +150°C and power dissipation of PD ≥ 75 percent of the rated PT (see 1.3). 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), TA = +200°C. n = 22, c = 0, t = 340 hours. Step 8 MIL-PRF-19500/350G 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Method Condition C2 2036 Test condition E. C6 1026 1,000 hours at VCB = 10 V dc; TJ = +150°C min. Power shall be applied to the device to achieve TJ ≥ +150°C and a power dissipation of PD ≥ 75 percent of the rated PT (see 1.3). Subgroup 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Method Condition C2 2036 Test condition E. C5 3131 RθJC (see 4.5.2). Subgroup C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) and delta measurements shall be in accordance with the applicable steps of table I, subgroup 2; except ZθJX need not be performed, and table III herein. 9 MIL-PRF-19500/350G 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following conditions shall apply: a. Collector current magnitude shall be 500 mA dc. b. Collector emitter voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be +25°C ≤ TR ≤ +35°C. The chosen reference temperature shall be recorded before the test is started. d. Maximum limit shall be RθJA = 175°C/W. e. Maximum limit shall be RθJC = 17.5°C/W. 10 MIL-PRF-19500/350G TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to 3/ 4/ 5/ solvent 1022 n = 15 devices, c = 0 Temperature cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 5/ 1071 n = 22 devices, c = 0 Fine leak Gross leak Electrical measurements 4/ Group A, subgroup 2 Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs, n = 11 wires, c = 0. Decap internal visual (design verification) 2075 N = 4 devices, c = 0. Subgroup 2 Collector to base cutoff current 3036 ICBO1 100 µA dc IEBO1 100 µA dc VCB = 40 V dc VCB = 60 V dc 2N3867, 2N3867S 2N3868, 2N3868S Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc Breakdown voltage, collector to emitter 3061 Bias condition D; IC = 20 mA dc; pulsed (see 4.5.1) V(BR)CEO 40 60 2N3867, 2N3867S 2N3868, 2N3868S Collector to emitter cutoff current 2N3867, 2N3867S 2N3868, 2N3868S 3041 Bias condition A; VEB = 2.0 V dc ICEX1 VCE = 40 V dc, VCE = 60 V dc See footnotes at end of table. 11 V dc V dc 1.0 µA dc MIL-PRF-19500/350G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 1.0 V dc, IC = 500 mA dc, pulsed (see 4.5.1) hFE1 50 35 2N3867, 2N3867S 2N3868, 2N3868S Forward-current transfer ratio 3076 VCE = 2.0 V dc, IC = 1.5 A dc, pulsed (see 4.5.1) hFE2 2N3867, 2N3867 S 2N3868, 2N3868S Forward-current transfer ratio 40 30 3076 VCE = 3.0 V dc, IC = 2.5 A dc, pulsed (see 4.5.1) 200 150 hFE3 25 20 2N3867, 2N3867S 2N3868, 2N3868S Forward-current transfer ratio 3076 VCE = 5.0 V dc, IC = 3.0 A dc, pulsed (see 4.5.1) Collector to emitter voltage (saturated) 3071 IC = 500 mA dc; IB = 50 mA dc, pulsed (see 4.5.1) VCE(sat)1 0.5 V dc Collector to emitter voltage (saturated) 3071 IC = 1.5 A dc; IB = 150 mA dc; pulsed (see 4.5.1) VCE(sat)2 0.75 V dc Collector to emitter voltage (saturated) 3071 IC = 2.5 A dc; IB = 250 mA dc; pulsed (see 4.5.1) VCE(sat)3 1.5 V dc Base emitter voltage (saturated) 3066 Test condition A; IC = 500 mA dc; VBE(sat)1 1.0 V dc Base emitter voltage (saturated) 3066 Test condition A; IC = 1.5 A dc; IB = 150 mA dc; pulsed (see 4.5.1) VBE(sat)2 1.4 V dc Base emitter voltage (saturated) 3066 Test condition A; IC = 2.5 A dc; IB = 250 mA dc;pulsed (see 4.5.1) VBE(sat)3 2.0 V dc hFE4 20 IB = 50 mA dc; pulsed (see 4.5.1) See footnotes at end of table. 12 0.9 MIL-PRF-19500/350G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 3 High temperature operation: Collector to emitter cutoff current TA = +150°C 3041 2N3867, 2N3867S 2N3868, 2N3868S VCE = 40 V dc VCE = 60 V dc Low temperature operation: TA = -55°C Forward-current transfer ratio 3076 200 ICEX2 µA dc Bias condition A, VEB = 2.0 V dc VCE = 1.0 V dc, IC = 500 mA dc, pulsed (see 4.5.1) hFE5 2N3867, 2N3867S 2N3868, 2N3868S 25 17 Subgroup 4 3 12 Magnitude of commonemitter small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 5 V dc, IC = 100 mA dc, f = 20 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cobo 120 pF Input capacitance (output open-circuited) 3240 VEB = 3.0 V dc, IC = 0, 100 kHz ≤ f ≤ 1 MHz Cibo 800 pF 3251 Test condition A td 35 ns Subgroup 5 Pulse response Delay time VCC = -30 V dc, VEB = 0 , IC = 1.5 A dc, IB1 = 150 mA dc, See figure 4 See footnotes at end of table. 13 MIL-PRF-19500/350G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 5 - Continued Pulse response 3251 Test condition A Rise time VCC = -30 V dc, VEB = 0 V dc, IC = 1.5 A dc, IB1 = 150 mA dc, See figure 4 tr 65 ns Storage time VCC = -30 V dc, VEB = 0 V dc, IC = 1.5 A dc, IB1 = IB2 = 150 mA dc, See figure 5 ts 500 ns Fall time VCC = -30 V dc, VEB = 0 V dc, IC = 1.5 A dc, IB1 = IB2 = 150 mA dc, See figure 5 tf 100 ns Subgroup 6 SOA (continuous dc) Test 1 3051 TC = +25°C, 1 cycle, t = 1.0 s, (see figure 6) VCE = 3.33 V dc, IC = 3 A dc Test 2 2N3867, 2N3867S VCE = 40 V dc, IC = 160 mA dc 2N3868, 2N3868S VCE = 60 V dc, IC = 80 mA dc Electrical measurements See table III, steps 1, and 2. 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 14 MIL-PRF-19500/350G TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method * Qualification Conditions Subgroup 1 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles 45 devices c=0 Fine leak Gross leak Electrical measurements * See group A, subgroup 2 herein. Subgroup 2 Intermittent life 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles, forced air cooling allowed on cooling cycle only. 45 devices c=0 See group A, subgroup 2 herein. Subgroups 3, 4, 5, 6, and 7 Not applicable * Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V dc. Condition B for devices < 400 V dc. 15 45 devices c=0 MIL-PRF-19500/350G TABLE III. Delta requirements. Step Inspection MIL-STD-750 Method 1 Collector-base cutoff current 3041 2N3867, 2N3867S 2N3868, 2N3868S 2 Forward current transfer ratio Symbol Limit Conditions Bias condition D ∆ICEX1 1/ 100 percent of initial value or 200 nA dc, whichever is greater. ∆hFE2 1/ 15 percent change from initial reading. VCE = 40 V dc VCE = 60 V dc 3076 VCE = 2 V dc; IC = 1.5 A dc; pulsed see 4.5.1 1/ Devices which exceed the group A limits for this test shall not be accepted. 16 Unit MIL-PRF-19500/350G FIGURE 4. Equivalent circuit for measuring delay and rise times. FIGURE 5. Equivalent circuit for measuring storage and fall times. 17 MIL-PRF-19500/350G FIGURE 6. Maximum SOA graph (continuous dc). 18 MIL-PRF-19500/350G 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example, JANHCA2N3867) will be identified on the QPL. JANC ordering information Manufacturers PIN 2N3867 2N3868 33178 JANHCA2N3867, JANKCA2N3867 JANHCA2N3868, JANKCA2N3868 43611 JANHCB2N3867, JANKCB2N3867 JANHCB2N3868, JANKCB2N3868 * 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. 19 MIL-PRF-19500/350G Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2569) Review activities: Army - AR, AV, MI, SM Navy - AS, MC Air Force - 19, 71, 99 20 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/350G 2. DOCUMENT DATE 2 April 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N3867, 2N3867S, 2N3868, AND 2N3868S, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First Middle Initial) c. ADDRESS (Include Zip Code) 8. PREPARING ACTIVITY a. NAME Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99