24C32 / 24C64 Features ¡Wide Voltage Operation ¡1 MHz (5V), 400 kHz (1.8V, 2.5V, 2.7V) Compatibility ¡Write Protect Pin for Hardware Data Protection ¡32-byte Page (32K, 64K) Write Modes ¡Partial Page Writes Allowed ¡Self-timed Write Cycle (5 ms max) ¡High-reliability - VCC = 1.8V to 5.5V ¡Operating Ambient Temperature: -40。C to +85。C ¡Internally Organized: - 24C32, 4096 X 8 (32K bits) - 24C64, 8192 X 8 (64K bits) - Endurance: 1 Million Write Cycles ¡Two-wire Serial Interface ¡Schmitt Trigger, Filtered Inputs for Noise Suppression ¡Bidirectional Data Transfer Protocol - Data Retention: 100 Years ¡8-lead PDIP, 8-lead SOP and 8-lead TSSOP Packages ¡Die Sales: Wafer Form, Waffle Pack General Description The 24C32/ 24C64 provides 32,768/65,536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 4096/8192 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The 24C32/ 24C64 is available in space-saving 8-lead PDIP, 8-lead SOP, and 8-lead TSSOP packages and is accessed via a two-wire serial interface. Pin Configuration 8-lead PDIP 8-lead SOP 8-lead TSSOP A0 1 8 V CC A0 1 8 VCC A0 1 8 VCC A1 2 7 WP A1 2 7 WP A1 2 7 WP A2 3 6 SCL A2 3 6 SCL A2 3 6 SCL GND 4 5 SDA GND 4 5 SDA GND 4 5 SDA Pin Descriptions ¡Table 1: Pin Configuration Pin Designation Type Name and Functions A0 - A2 I Address Inputs SDA I/O & Open-drain Serial Data SCL I Serial Clock Input WP I Write Protect GND P Ground VCC P Power Supply BEIJING ESTEK ELECTRONICS CO.,LTD 1 E 24C32 / 24C64 Block Diagram VCC GND WP SCL START STOP LOGIC SDA EN SERIAL CONTROL LOGIC HIGH VOLTAGE PUMP/TIMING LOAD COMP DATA RECOVERY DEVICE ADDRESS COMPARATOR INC A1 DATA WORD ADDRESS COUNTER A2 Y DECODER DIN X DECODER LOAD A0 EEPROM SERIAL MUX DOUT/ACKNOWLEDGE DOUT BEIJING ESTEK ELECTRONICS CO.,LTD 2 24C32 / 24C64 Pin Descriptions DEVICE/PAGE ADDRESSES (A2, A1 and A0): The A2, A1 and A0 pins are device address inputs that are hard wired for the 24C32/ 24C64. Eight 32K/64K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is open-drain driven and may be wire-ORed with any number of other open-drain or open- collector devices. SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. WRITE PROTECT (WP): The 24C32/ 24C64 has a Write Protect pin that provides hardware data protection. The Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is connected to V CC , the write protection feature is enabled and operates as shown in the following Table 2. ¡Table 2: Write Protect WP Pin Status At VCC At GND Part of the Array Protected 24C32 24C64 Full (32K) Array Full (64K) Array Normal Read / Write Operations Memory Organization 24C32, 32K SERIAL EEPROM: Internally organized with 128 pages of 32 bytes each, the 32K requires an 12-bit data word address for random word addressing. 24C64, 64K SERIAL EEPROM: Internally organized with 256 pages of 32 bytes each, the 64K requires a 13-bit data word address for random word address BEIJING ESTEK ELECTRONICS CO.,LTD 3 24C32 / 24C64 Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (see to Figure 1 on page 4). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see to Figure 2 on page 4). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 2 on page 4). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a "0" to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: The 24C32/ 24C64 features a low-power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire part can be reset by following these steps: 1. Clock up to 9 cycles. 2. Look for SDA high in each cycle while SCL is high. 3. Create a start condition. ¡Figure 1: Data Validity SDA SCL DATA STABLE DATA STABLE DATA CHANGE ¡Figure 2: Start and Stop Definition SDA SCL START STOP BEIJING ESTEK ELECTRONICS CO.,LTD 4 24C32 / 24C64 ¡Figure 3: Output Acknowledge 1 SCL 8 9 DATA IN DATA OUT START ACKNOWLEDGE Device Addressing The 32K and 64K EEPROM devices all require an 8-bit device address word following a start condition to enable the chip for a read or write operation (see to Figure 4 on page 7). The device address word consists of a mandatory "1", "0" sequence for the first four most significant bits as shown. This is common to all the Serial EEPROM devices. The next 3 bits are the A2, A1 and A0 device address bits for the 32K/64K EEPROM. These 3 bits must compare to their corresponding hardwired input pins. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a "0". If a compare is not made, the chip will return to a standby state. BEIJING ESTEK ELECTRONICS CO.,LTD 5 EE 24C32 / 24C64 Write Operations BYTE WRITE: A write operation requires two 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a "0" and then clock in the first 8bit data word. Following receipt of the 8-bit data word, the EEPROM will output a "0" and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (see Figure 5 on page 7). PAGE WRITE: The 32K/64K EEPROM is capable of an 32-byte page write. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to 31 (32K, 64K) more data words. The EEPROM will respond with a "0" after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 6 on page 7). The data word address lower five (32K, 64K) bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 32 (32K, 64K) data words are transmitted to the EEPROM, the data word address will "roll over" and previous data will be overwritten. ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a "0", allowing the read or write sequence to continue. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to "1". There are three read operations: current address read, random address read and sequential read. CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address "roll over" during read is from the last byte of the last memory page to the first byte of the first page. The address "roll over" during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to "1" is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input "0" but does generate a following stop condition (see Figure 7 on page 8). BEIJING ESTEK ELECTRONICS CO.,LTD 6 24C32 / 24C64 E Read Operations RANDOM READ: A random read requires a "dummy" byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 8 on page 8). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will "roll over" and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a "0" but does generate a following stop condition (see Figure 9 on page 8). ¡Figure 4: Device Address 32K/64K 1 0 1 0 A2 A1 A0 MSB R/W LSB ¡Figure 5: Byte Write W S R T I A DEVICE T R ADDRESS E T FIRST WORD SECOND WORD ADDRESS ADDRESS S T O P DATA SDA LINE M S B L R AM S / CS BWK B L AM SCS B KB LA SC BK A C K ¡Figure 6: Page Write S T A R DEVICE T ADDRESS W R I T E FIRST WORD SECOND WORD ADDRESS ADDRESS DATA( n ) S T O P DATA( n+x ) DATA( n+1 ) SDA LINE M S B L R AM S / CS BWK B L AM SCS B KB L S B A C K A C K A C K A C K BEIJING ESTEK ELECTRONICS CO.,LTD 7 24C32 / 24C64 ¡Figure 7: Current Address Read S T A R DEVICE T ADDRESS R E A D S T O P DATA SDA LINE M S B N O L RA S/C BWK A C K ¡Figure 8: Random Read W S R T I A R DEVICE T 1st, 2nd WORD T ADDRESS E ADDRESS(n) S T A R DEVICE T ADDRESS R E A D S T O P DATA( n ) SDA LINE M S B A M C S K B L RA S/C BWK N O LRA S /C BWK A C K DUMMY WRITE ¡Figure 9: Sequential Read R E DEVICE A ADDRESS D DATA( n+1 ) DATA( n ) S T O P DATA( n+x ) DATA( n+2 ) SDA LINE RA /C WK A C K A C K A C K N O A C K BEIJING ESTEK ELECTRONICS CO.,LTD 8 24C32 / 24C64 Electrical Characteristics ¡Absolute Maximum Stress Ratings ¡Comments Stresses above those listed under "Absolute Maximum Ratings" DC Supply Voltage . . . . . . . . . . . . . . . . .-0.3V to +6.5V may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any Input / Output Voltage . . . . . . . .GND-0.3V to VCC+0.3V other conditions above those indicated in the operational sections Operating Ambient Temperature . . . . . -40。C to +85。C of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may Storage Temperature . . . . . . . . . . . . -65。C to +150。C affect device reliability. DC Electrical Characteristics = -40 。C to +85 。C, VCC = +1.8V to +5.5V (unless otherwise noted) ¡Applicable over recommended operating range from: T A Symbol Min. Typ. Max. Unit Supply Voltage Parameter VCC 1.8 - 5.5 V Condition Supply Current VCC = 5.0V ICC1 - 0.4 1.0 mA READ at 100 kHz Supply Current VCC = 5.0V ICC2 - 2.0 3.0 mA WRITE at 100 kHz Standby Current ISB - - 1.0 A VIN = VCC or GND Input Leakage Current ILI - - 3.0 A VIN = VCC or GND Output Leakage Current ILO - 0.05 3.0 A VOUT = VCC or GND Input Low Level VIL -0.6 - VCC X 0.3 V Input High Level VIH VCC X 0.7 - VCC + 0.5 V Output Low Level VCC =5.0V VOL3 - - 0.4 V IOL = 3.0 mA Output Low Level VCC =3.0V VOL2 - - 0.4 V IOL = 2.1 mA Output Low Level VCC =1.8V VOL1 - - 0.2 V IOL = 0.15 mA Pin Capacitance ¡Applicable over recommended operating range from T A Parameter = 25 。C, f = 1.0 MHz, VCC = +1.8V Symbol Min. Typ. Input/Output Capacitance (SDA) CI/O - - Max. 8 Unit pF VI/O = 0V Condition Input Capacitance (A0, A1, A2, SCL) CIN - - 6 pF VIN = 0V BEIJING ESTEK ELECTRONICS CO.,LTD 9 24C32 / 24C64 AC Electrical Characteristics ¡Applicable over recommended operating range from T A = -40。C to +85。C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted) Parameter Symbol 1.8-volt 5.0-volt Min. Typ. Max. Min. Typ. Max. Units Clock Frequency, SCL fSCL - - 400 - - 1000 kHz Clock Pulse Width Low tLOW 1.2 - - 0.6 - - s Clock Pulse Width High tHIGH 0.6 - - 0.4 - - s Noise Suppression Time tI - - 50 - - 40 s Clock Low to Data Out Valid tAA 0.05 - 0.9 0.05 - 0.55 s Time the bus must be free before a new transmission can start tBUF 1.2 - - 0.5 - - s tHD.STA 0.6 - - 0.25 - - s Start Setup Time tSU.STA 0.6 - - 0.25 - - s Data In Hold Time tHD.DAT 0 - - 0 - - s Data In Setup Time tSU.DAT 100 - - 100 - - ns Inputs Rise Time(1) tR - - 0.3 - - 0.3 s Start Hold Time Inputs Fall Time(1) Stop Setup Time Data Out Hold Time Write Cycle Time 。 5.0V, 25 C, Byte Mode tF - - 300 - - 100 ns tSU.STO 0.6 - - 0.25 - - s tDH 50 - - 50 - - ns tWR - - 5 - - 5 ms Endurance 1M - - - - - Write Cycles Note 1. This parameter is characterized and is not 100% tested. 2. AC measurement conditions: RL (connects to VCC): 1.3 k (2.5V, 5V), 10 k (1.8V) Input pulse voltages: 0.3 VCC to 0.7 VCC Input rise and fall time: 50 ns Input and output timing reference voltages: 0.5 VCC The value of RL should be concerned according to the actual loading on the user's system. BEIJING ESTEK ELECTRONICS CO.,LTD 10 24C32 / 24C64 Bus Timing ¡Figure 10: SCL: Serial Clock, SDA: Serial Data I/O tHIGH tF tLOW tR tLOW SCL tSU.STA tHD.STA tHD.DAT tSU.DAT tSU.STO SDA_IN tAA tDH tBUF SDA_OUT Write Cycle Timing ¡Figure 11: SCL: Serial Clock, SDA: Serial Data I/O SCL SDA 8th BIT ACK tWR(1) STOP CONDITION START CONDITION Note 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. BEIJING ESTEK ELECTRONICS CO.,LTD 11 24C32 / 24C64 Ordering Information Code Number Part Number 1.Prefix K 24 XXX X 1 2 3 4 4.Design Option 2.Series Name 24: Two-wire (I2C) Interface 3.EEPROM Density C32=32K bits C64=64K bits o= X X X X 5 6 7 8 6. Temperature Range 。 。 。 。 I = Ind Temp(-40 C-85 C) 。 。 C = Com Temp(0 C-70 C) (Blank) 5.Package Type D = DIP - E = Exp Temp(-40 C-125 C) - X 9 8.Plating Technology Blank = Standard SnPb plating G = ECOPACK(RoHS compliant) 9.Operating Voltage 7.Pack Type S=2.7~5.5 R = TSSOP T = Tube A=1.8~5.5 W = Wafer/die R = Tape & Reel S = SOP Product Datasheet Change Notice Datasheet Revision History Version Content Date 1.0 Datasheet Mar., 2007 BEIJING ESTEK ELECTRONICS CO.,LTD 12