SAMSUNG K4W2G1646C

Apr. 2010
Graphic Memory
Product Guide
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
Apr. 2010
Product Guide
Graphic Memory
1. GRAPHIC MEMORY ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
12
13 14
K 4 X XX XX X X X - X X XX
Speed
SAMSUNG Memory
Temperature & Power
DRAM
Package Type
Product
Density & Refresh
Revision
Interface (VDD, VDDQ)
Organization
Bank
1. SAMSUNG Memory
2. DRAM
3. Product
N:
W:
J :
G:
gDDR2 SDRAM
gDDR3 SDRAM
GDDR3 SGRAM
GDDR5 SGRAM
10. Revision
M:
B :
D:
F :
H:
Q:
gDDR3
E : 100FBGA(Halogen Free & Lead Free)
H : 96FBGA(Halogen Free & Lead Free)
GDDR3
B : 136FBGA(Lead Free)
H : 136FBGA(Halogen Free & Lead Free)
GDDR5
H : 170FBGA(Halogen Free & Lead Free)
12. Temperature & Power(VDD)
16 : x16
32 : x32
8. Bank
C : Commercial Normal
J : Commercial High
L : Commercial Low
13~14. Speed
1A1)
112)
12
14
15
16
18
19
20
22
25
3 : 4Banks
4 : 8Banks
9. Interface ( VDD, VDDQ)
Q
5
6
F
K
:
:
:
:
:
SSTL_2 (1.8V, 1.8V)
SSTL_2 (1.8V,1.8V,LP)
SSTL_15 (1.5V,1.5V)
POD_15 (1.5V,1.5V)
POD_18 (1.8V,1.8V)
: 2nd Gen.
: 4th Gen.
: 6th Gen.
: 8th Gen.
: 10th Gen.
: 26th Gen.
gDDR2
H : 84FBGA(Halogen Free & Lead Free)
B : 84FBGA(Halogen Free & Lead Free & Flip Chip)
: 512M, 8K/64ms
: 512M, 8K/32ms
:
1G, 8K/32ms
:
1G, 8K/64ms
:
2G, 8K/64ms
:
4G, 8K/64ms
6~7. Organization
A
C
E
G
I
Z
11. Package Type
4~5. Density & Refresh
51
52
10
1G
2G
4G
1st Gen.
3rd Gen.
5th Gen.
7th Gen.
9th Gen.
17th Gen.
:
:
:
:
:
:
:
:
:
:
:
0.935ns (2.1Gbps)
1.07ns (1.8Gbps)
1.25ns (1.6Gbps)
1.4ns (1.4Gbps)
1.5ns (1.3Gbps)
1.6ns (1.2Gbps)
1.8ns (1.1Gbps)
1.875ns (1.06Gbps)
2.0ns (1.0Gbps)
2.2ns (0.9Gbps)
2.5ns (0.8Gbps)
28
03
04
05
5C
06
6A
07
7A
08
09
:
:
:
:
:
:
:
:
:
:
:
0.28ns
0.33ns
0.40ns
0.50ns
0.56ns
0.62ns
0.66ns
0.71ns
0.77ns
0.8ns
0.9ns
(7.0Gbps)
(6.0Gbps)
(5.0Gbps)
(4.0Gbps)
(3.6Gbps)
(3.2Gbps)
(3.0Gbps)
(2.8Gbps)
(2.6Gbps)
(2.4Gbps)
(2.2Gbps)
NOTE :
1)Graphic high speed binning was unified to EDP binning(2000Mbps→2133Mbps)
2)Graphic high speed binning was unified to EDP binning(1800Mbps→1866Mbps)
-2-
Apr. 2010
Product Guide
Graphic Memory
2. GRAPHIC MEMORY COMPONENT PRODUCT GUIDES
Product
Density
Banks
Part Num.
PKG & Speed
K4N51163QG
HC20/25
512Mb Z-die
K4N51163QZ
HC20/25
1Gb E-die
K4N1G164QE
HC20/25
1Gb F-die
K4N1G164QF
BC20/25
1Gb E-die
K4W1G1646E
HC1A/11
12/15
512Mb G-die
4Banks
gDDR2
SDRAM
Interf.
Ref.
Voltage(V)
SSTL_18 8K/64ms
1.8V ± 0.1V
HC12/15
128Mx16 SSTL_15 8K/64ms 1.5V ± 0.075V
2Gb C-die
K4W2G1646C
HC1A/11
12/15
128Mx16
K4J52324KI
HC7A/08
1A/12/14
16Mx32
8Banks
PKG Type
Status
Halogen-Free
& Lead-Free
Mass
Production
Halogen-Free,
Lead-Free
& Flip-Chip
CS
May. ’10
64Mx16
8Banks K4W2G1646B
512Mb I-die
84ball
FBGA
64Mx16
2Gb B-die
GDDR3
SGRAM
PKG.
32Mx16
8Banks
gDDR3
SDRAM
Org.
96ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
CS
May. ’10
Pseudo
Open_
Drain
1.8V ± 0.1V
8K/32ms
136ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
Mass
Production
1Gb E-die
K4J10324KE
HC7A/08
1A/12/14
1Gb E-die
8Banks K4G10325FE
HC04/05
5C
32Mx32 POD_15 8K/32ms 1.5V ± 0.045V
170ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
TBD
64Mx32 POD_15 16K/32ms 1.5V ± 0.045V
170ball
FBGA
Halogen-Free
& Lead-Free
CS
May. ’10
GDDR5
SGRAM
2Gb C-die 16Banks K4G20325FC
32Mx32
-3-
1.8V ± 0.1V