SAMSUNG K9F4G08U0D

Product Selection Guide
Samsung Semiconductor, Inc.
Memory & Storage
2H 2010
Samsung Semiconductor, Inc.
Samsung offers the industry’s broadest memory portfolio and has maintained its
leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
products are found in computers—from ultra-mobile portables to powerful servers—
and in a wide range of handheld devices such as smartphones and MP3 players.
Samsung also delivers the industry’s widest line of storage products. These include
optical and hard disk drives as well as flash storage, such as the all-flash Solid State
Drive and a range of embedded and removable flash storage products.
Markets
DRAM
SRAM
FLASH
Mobile/Wireless
Notebook PCs
Desktop
PCs/Workstations
Servers
Networking/
Communications
Consumer
Electronics
www.samsung.com/us/business/components
ASIC
LOGIC
TFT/LCD ODD/HDD
DRAM
FLASH
Pages 14-16
FLASH
www.samsung.com/semi/flash
• SLC Flash
• MLC Flash
• SD and microSD Cards
• Flash Ordering Information
HIGH SPEED SRAM
Pages 17-20
SR AM
www.samsung.com/semi/sram
• Asychronous
• Synchronous
• NtRAM™
• Late-Write R-R SRAM
• DDR / II / II+ SRAM
• QDR / II / II+ SRAM
MULTI-CHIP PACKAGE
Pages 21-22
• NOR & UtRAM
• NOR & DRAM
Fusion Memory
MCP
www.samsung.com/semi/mcp
• NAND & DRAM
• OneNAND & DRAM
• Flex-OneNAND & DRAM
• OneNAND & DRAM & OneDRAM
• moviNAND & NAND & DRAM
Pages 23
FU SION
www.samsung.com/semi/fusion
• moviNAND™
• OneDRAM™
STORAGE
HaManufacturers
repsr• Flash
SSD
Solid
State
Drives
www.samsungssd.com
Optical
Disk Drives
• SATA SSD
www.samsungodd.com
Hard Drive
• External DVD
www.samsung.com/hdd
• Internal DVD
• Internal COMBO
DRAM
• Graphics DDR SDRAM
• DRAM Ordering Information
Pages 24-27
•Optical
InternalDisc
CD
www.samsungodd.com
STOR A GE
www.samsung.com/semi/dram
• DDR3 SDRAM
• DDR2 SDRAM
• DDR SDRAM
• SDRAM
• Mobile SDRAM
• RDRAM
Pages 4-13
DDR3 SDRAM REGISTERED MODULES
Density
Voltage
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Ranks
Production
1GB
1.5V
128Mx72
M393B2873FH0-C(F8/H9/K0*)(04/05)
1Gb (128M x8) * 9
Lead Free & Halogen Free
1066/1333
1
Now
2GB
1.5V
256Mx72
M393B5673FH0-C(F8/H9/K0*)(04/05)
1Gb (128M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M393B5670FH0-C(F8/H9/K0*)(04/05)
1Gb (256M x4) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M393B5173FH0-CF8(04/05)
1Gb (128M x8) * 36
Lead Free & Halogen Free
1066/1333
4
Now
M393B5170FH0-C(F8/H9/K0*)(04/05)
1Gb (256M x4) * 36
Lead Free & Halogen Free
1066/1333
2
Now
M393B5273CH0-C(F8/H9/K0*)(04/05) 2Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M393B5270CH0-C(F8/H9/K0*)(04/05) 2Gb (512M x4) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M393B1K73CH0-CF8(04/05)
4GB
1.5V
512Mx72
2Gb (256M x8) * 36
Lead Free & Halogen Free
1066/1333
4
Now
M393B1K70CH0-C(F8/H9/K0*)(04/05) 2Gb (512M x4) * 36
Lead Free & Halogen Free
1066/1333
2
Now
2Gx72
M393B2K70CM0-CF8(04/05)
4Gb DDP (1024M x4) * 36
Lead Free & Halogen Free
1066/1333
4
Now
4Gx72
M393B4G70AM0-CF8(04/05)
8Gb DDP (2048M x4) * 36
Lead Free & Halogen Free
1066/1333
4
Now
128Mx72
M393B2873FH0-Y(F8/H9/K0*)(04/05)
1Gb (128M x8) * 9
Lead Free & Halogen Free
1066/1333
1
Now
M393B5673FH0-Y(F8/H9/K0*)(04/05)
1Gb (128M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M393B5670FH0-Y(F8/H9/K0*)(04/05)
1Gb (256M x4) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M393B5173FH0-YF8(04/05)
1Gb (128M x8) * 36
Lead Free & Halogen Free
1066/1333
4
Now
M393B5170FH0-Y(F8/H9/K0*)(04/05)
1Gb (256M x4) * 36
Lead Free & Halogen Free
1066/1333
2
Now
M393B5273CH0-Y(F8/H9/K0*)(04/05)
2Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M393B5270CH0-Y(F8/H9/K0*)(04/05)
2Gb (512M x4) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M393B1K73CH0-YF8(04/05)
2Gb (256M x8) * 36
Lead Free & Halogen Free
1066/1333
4
Now
M393B1K70CH0-Y(F8/H9/K0*)(04/05)
2Gb (512M x4) * 36
Lead Free & Halogen Free
1066/1333
2
Now
M393B2K70CM0-YF8(04/05)
4Gb DDP (1024M x4) * 36
Lead Free & Halogen Free
1066/1333
4
Now
M393B4G70AM0-YF8(04/05)
8Gb DDP (2048M x4) * 36
Lead Free & Halogen Free
1066/1333
4
Now
8GB
1.5V
1Gx72
16GB
1.5V
32GB
1.5V
1GB
1.35V
2GB
4GB
1.35V
1.35V
256Mx72
512Mx72
8GB
1.35V
1Gx72
16GB
1.35V
2Gx72
32GB
1.35V
4Gx72
Notes:
F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
4
DDR3 SDRAM
04 = IDT B0 register
05 = Inphi C0 register
* K0 (1600Mbps) available in ES only
2H 2010
www.samsung.com/semi/dram
Density
Voltage
Organization
1GB
1.5V
128Mx72
2GB
4GB
8GB
1.5V
1.5V
1.5V
256Mx72
512Mx72
1Gx72
Part Number
Composition
Compliance
Speed (Mbps)
Ranks Production
M392B2873FH0-C(F8/H9)(04/05)
1Gb (128M x8) * 9
Lead Free & Halogen Free
1066/1333
1
Now
M392B5673FH0-C(F8/H9)(04/05)
1Gb (128M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B5670FH0-C(F8/H9)(04/05)
1Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M392B5170FM0-C(F8/H9)(04/05)
2Gb DDP (512M x4) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B5273CH0-C(F8/H9)(04/05)
2Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B5270CH0-C(F8/H9)(04/05)
2Gb (512M x4) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M392B1K73CM0-CF8(04/05)
4Gb DDP (512M x8) * 18
Lead Free & Halogen Free
1066/1333
4
Now
M392B1K70CM0-C(F8/H9)(04/05)
4Gb DDP (1024M x4) * 18
Lead Free & Halogen Free
1066/1333
2
Now
16GB
1.5V
2Gx72
M392B2G70AM0-C(F8/H9)(04/05)
8Gb DDP (2048M x4) * 18
Lead Free & Halogen Free
1066/1333
2
Now
1GB
1.35V
128Mx72
M392B2873FH0-Y(F8/H9)(04/05)
1Gb (128M x8) * 9
Lead Free & Halogen Free
1066/1333
1
Now
2GB
1.35V
256Mx72
4GB
1.35V
512Mx72
8GB
1.35V
1Gx72
16GB
1.35V
2Gx72
Notes:
F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
M392B5673FH0-Y(F8/H9)(04/05)
1Gb (128M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B5670FH0-Y(F8/H9)(04/05)
1Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M392B5170FM0-Y(F8/H9)(04/05)
2Gb DDP (512M x4) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B5273CH0-Y(F8/H9)(04/05)
2Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B5270CH0-Y(F8/H9)(04/05)
2Gb (512M x4) * 18
Lead Free & Halogen Free
1066/1333
1
Now
M392B1K73CM0-YF8(04/05)
4Gb DDP (512M x8) * 18
Lead Free & Halogen Free
1066/1333
4
Now
M392B1K70CM0-Y(F8/H9)(04/05)
4Gb DDP (1024M x4) * 18
Lead Free & Halogen Free
1066/1333
2
Now
M392B2G70AM0-Y(F8/H9)(04/05)
8Gb DDP (2048M x4) * 18
Lead Free & Halogen Free
1066/1333
2
Now
04 = IDT B0 register
05 = Inphi C0 register
DDR3 SDRAM UNBUFFERED MODULES
Density
Voltage
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Ranks Production
1GB
1.5V
128Mx64
M378B2873FH0-C(F8/H9/K0*)
1Gb (128M x8) * 8
Lead Free & Halogen Free
1066/1333/1600
1
2GB
1.5V
256Mx64
Now
M378B5673FH0-C(F8/H9/K0*)
1Gb (128M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
M378B5773FH0-C(F8/H9/K0*)
2Gb (256M x8) * 8
Lead Free & Halogen Free
1066/1333/1600
1
Now
4GB
1.5V
512Mx64
M378B5273CH0-C(F8/H9/K0*)
2Gb (256M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
8GB
1.5V
1024Mx64
M378B1G73AH0-C(F8/H9/K0*)
4Gb (512M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density
Voltage
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Ranks Production
1GB
1.5V
128Mx72
M391B2873FH0-C(F8/H9/K0*)
1Gb (128M x8) * 9
Lead Free & Halogen Free
1066/1333/1600
1
2GB
1.5V
256Mx72
Now
M391B5673FH0-C(F8/H9/K0*)
1Gb (128M x8) * 18
Lead Free & Halogen Free
1066/1333/1600
2
Now
M391B5773FH0-C(F8/H9/K0*)
2Gb (256M x8) * 9
Lead Free & Halogen Free
1066/1333/1600
1
Now
4GB
1.5V
512Mx72
M391B5273CH0-C(F8/H9/K0*)
2Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333/1600
2
Now
8GB
1.5V
1024Mx72
M391B1G73AH0-C(F8/H9/K0*)
4Gb (512M x8) * 18
Lead Free & Halogen Free
1066/1333/1600
2
Now
1GB
1.35V
128Mx72
M391B2873FH0-Y(F8/H9/K0*)
1Gb (128M x8) * 9
Lead Free & Halogen Free
1066/1333/1600
1
Now
M391B5673FH0-Y(F8/H9/K0*)
1Gb (128M x8) * 18
Lead Free & Halogen Free
1066/1333/1600
2
Now
2GB
1.35V
256Mx72
M391B5773FH0-Y(F8/H9/K0*)
2Gb (256M x8) * 9
Lead Free & Halogen Free
1066/1333/1600
1
Now
4GB
1.35V
512Mx72
M391B5273CH0-Y(F8/H9/K0*)
2Gb (256M x8) * 18
Lead Free & Halogen Free
1066/1333/1600
2
Now
8GB
1.35V
1024Mx72
M391B1G73AH0-Y(F8/H9/K0*)
4Gb (512M x8) * 18
Lead Free & Halogen Free
1066/1333/1600
2
Now
Notes:
F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
* K0 (1600Mbps) available in ES only
www.samsung.com/semi/dram
2H 2010
DDR3 SDRAM
5
DRAM
DDR3 SDRAM VLP REGISTERED MODULES
DDR3 SDRAM SODIMM MODULES
Density
Voltage
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Ranks Production
1GB
1.5V
128Mx64
M471B2873FHS-C(F8/H9/K0*)
1Gb (128M x8) * 8
Lead Free & Halogen Free
1066/1333/1600
1
2GB
1.5V
256Mx64
Now
M471B5673FH0-C(F8/H9/K0*)
1Gb (128M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
M471B5773FHS-C(F8/H9/K0*)
2Gb (256M x8) * 8
Lead Free & Halogen Free
1066/1333/1600
1
Now
4GB
1.5V
512Mx64
M471B5273CH0-C(F8/H9/K0*)
2Gb (256M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
8GB
1.5V
1024Mx64
M471B1G73AH0-C(F8/H9/K0*)
4Gb (512M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
1GB
1.35V
128Mx64
M471B2873FHS-Y(F8/H9/K0*)
1Gb (128M x8) * 8
Lead Free & Halogen Free
1066/1333/1600
1
Now
M471B5673FH0-Y(F8/H9/K0*)
1Gb (128M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
2GB
1.35V
256Mx64
M471B5773FHS-Y(F8/H9/K0*)
2Gb (256M x8) * 8
Lead Free & Halogen Free
1066/1333/1600
1
Now
4GB
1.35V
512Mx64
M471B5273CH0-Y(F8/H9/K0*)
2Gb (256M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
8GB
1.35V
1024Mx64
M471B1G73AH0-Y(F8/H9/K0*)
4Gb (512M x8) * 16
Lead Free & Halogen Free
1066/1333/1600
2
Now
Notes:
F7 = DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
K0 = DDR3-1600 (11-11-11)
* K0 (1600Mbps) available in ES only
DDR3 SDRAM COMPONENTS
Density
Voltage
1Gb
1.5V
2Gb
1.5V
Organization
Part Number
# Pins-Package
Compliance
Speed (Mbps)
Dimensions Production
256M x4
K4B1G0446F-HC(F8/H9)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333
7.5x11mm
Now
128M x8
K4B1G0846F-HC(F8/H9/K0*)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333/1600
7.5x11mm
Now
512M x4
K4B2G0446C-HC(F8/H9)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333
7.5x11mm
Now
256M x8
K4B2G0846C-HC(F8/H9/K0*)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333/1600
7.5x11mm
Now
128M x16
K4B2G1646C-HC(F8/H9/K0*/MA*/NB*) 96 Ball -FBGA
Lead Free & Halogen Free
1066/1333/1600
7.5x13.3mm Now
256M x4
K4B1G0446F-HC(F8/H9)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333
7.5x11mm
Now
128M x8
K4B1G0846F-HC(F8/H9/K0*)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333/1600
7.5x11mm
Now
512M x4
K4B2G0446C-HC(F8/H9)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333
7.5x11mm
Now
256M x8
K4B2G0846C-HC(F8/H9/K0*)
78 Ball -FBGA
Lead Free & Halogen Free
1066/1333/1600
7.5x11mm
Now
1Gb
1.35V
2Gb
1.35V
Notes:
F7 = DDR3-800 (6-6-6)
MA = DDR3-1866 (13-13-13)
F8 = DDR3-1066 (7-7-7)
NB = DDR3-2133 (14-14-14)
H9 = DDR3-1333 (9-9-9)
* K0, MA, and NB are available in ES only
K0 = DDR3-1600 (11-11-11)
DDR2 SDRAM REGISTERED MODULES
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Register
Rank
Production
1GB
128Mx72
M393T2863FBA-C(E6/F7)
(128M x8)*9
Lead free
667/800
Y
1
Now
2GB
256Mx72
M393T5660FBA-C(E6/F7)
(256M x4)*18
Lead free
667/800
Y
1
Now
M393T5663FBA-C(E6/E7)
(128M x8)*18
Lead free
667/800
Y
2
Now
M393T5160FBA-C(E6/F7)
(256M x4)*36
Lead free
667/800
Y
2
Now
Compliance
Speed (Mbps)
Register
Rank
Production
Lead free
667
Y
1
4GB
512Mx72
Notes:
E6=PC2-5300 (DDR2-667 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
E7=PC2-6400 (DDR2-800 @ CL=5)
Voltage = 1.8V
DDR2 SDRAM VLP REGISTERED MODULES
Density
Organization
Part Number
Composition
2GB
256Mx72
M392T5660FBA-CE6
(256M x4)*18
6
DDR3 & DDR2 SDRAM
2H 2010
www.samsung.com/semi/dram
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Voltage
Rank
Production
2GB
256Mx72
M395T5663FB4-CE68
(128M x8)*18
Lead free
667
1.8V
2
Now
512Mx72
M395T5160FB4-CE68
(256M x4)*36
Lead free
667
1.8V
2
Now
512Mx72
M395T5163FB4-CE68
(128M x8)*36
Lead free
667
1.8V
4
Now
4GB
Notes:
DRAM
DDR2 SDRAM FULLY BUFFERED MODULES
E6 = PC2-5300 (DDR2-667 @ CL=5)
AMB = IDT L4
Voltage = 1.8V (AMB Voltage = 1.5V)
DDR2 SDRAM UNBUFFERED MODULES
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Rank
Production
1GB
128Mx64
M378T2863FBS-C(E6/F7/E7)
(128M x8)*8
Lead free
667/800
1
Now
2GB
256Mx64
M378T5663FB3-C(E6/F7/E7)
(128M x8)*16
Lead free
667/800
2
Now
Notes:
E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
DDR2 SDRAM UNBUFFERED MODULES (ECC)
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Rank
Production
1GB
128Mx72
M391T2863FB3-C(E6/F7)
(128Mx8)*9
Lead free
667/800
1
Now
2GB
256Mx64
M391T5663FB3-C(E6/F7)
(128Mx8)*18
Lead free
667/800
2
Now
Notes:
E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
DDR2 SDRAM SODIMM MODULES
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Rank
Production
1GB
128Mx64
M470T2863FB3-C(E6/F7/E7)
(64Mx16)*8
Lead free
667/800
2
Now
2GB
256Mx64
M470T5663FB3-C(E6/F7/E7)
(128M x8)*8
Lead free
667/800
2
Now
Notes:
E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
DDR2 SDRAM COMPONENTS
Density
Organization
Part Number
# Pins-Package
Dimensions
Package
Speed (Mbps)
Production
256Mb
16Mx16
K4T56163QN-HC(E6/F7/E7/F8)
84-FBGA
7.5x12.5mm
Lead free & Halogen free
667/800/1066
Now
128M x4
K4T51043QI-HC(E6/F7/E7)
60-FBGA
7.5x9.5mm
Lead free & Halogen free
667/800
Now
64M x8
K4T51083QI-HC(E6/F7/E7/F8)
60-FBGA
7.5x9.5mm
Lead free & Halogen free
667/800/1066
Now
32M x16
K4T51163QI-HC(E6/F7/E7/F8)
84-FBGA
7.5x12.5mm
Lead free & Halogen free
667/800/1066
Now
128M x4
K4T51043QJ-HC(E6/F7/E7)
60-FBGA
7.5x9.5mm
Lead free & Halogen free
667/800
Q3
64M x8
K4T51083QJ-HC(E6/F7/E7/F8)
60-FBGA
7.5x9.5mm
Lead free & Halogen free
667/800/1066
Q3
32M x16
K4T51163QJ-HC(E6/F7/E7/F8)
84-FBGA
7.5x12.5mm
Lead free & Halogen free
667/800/1066
Q3
256M x4
K4T1G044QF-BC(E6/F7/E7)
68-FBGA
7.5x9.5mm
Lead free & Halogen free
667/800
Now
128M x8
K4T1G084QF-BC(E6/F7/E7/F8)
68-FBGA
7.5x9.5mm
Lead free & Halogen free
667/800/1066
Now
64M x16
K4T1G164QF-BC(E6/F7/E7/F8)
84-FBGA
7.5x12.5mm
Lead free & Halogen free
667/800/1066
Now
512Mb
1Gb
Notes:
E6=DDR2-667 (5-5-5)
F7=DDR2-800 (6-6-6)
E7=DDR2-800 (5-5-5)
F8=DDR2-1066 (7-7-7)
Voltage = 1.8V
www.samsung.com/semi/dram
2H 2010
DDR2 SDRAM
7
DDR SDRAM 1U REGISTERED MODULES
Density
Organization
Part Number
Composition
Speed (Mbps)
1GB
128Mx72
M312L2920GH3-CB3
(128Mx4)*18
333/400
2GB
256Mx72
M312L5720GH3-CB3
(128Mx4)*36
333/400
Notes:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
Type: 184-pin
DDR DRAM SODIMM MODULES
Density
Organization
Part Number
Composition
Speed (Mbps)
512MB
64Mx64
M470L6524GL0-CB300
(32M x 16)*8
333
Notes:
B0 = DDR266 (133MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
B3 = DDR333 (166MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
Organization
Part Number
# Pins - Package
Speed (Mbps)
64Mx4
K4H560438N-LCB3/B0
66-TSOP
266/333
32Mx8
K4H560838N-LCCC/B3
66-TSOP
333/400
16Mx16
K4H561638N-LCCC/B3
66-TSOP
333/400
K4H510438G-LCB3/B0
66-TSOP
266/333
K4H510438G-HCCC/B3
60-FBGA
333/400
K4H510838G-LCCC/B3
66-TSOP
333/400
K4H510838G-HCCC/B3
60-FBGA
333/400
DDR SDRAM COMPONENTS
Density
256Mb
128Mx4
512Mb
64Mx8
32Mx16
K4H511638G-LCCC/B3
66-TSOP
333/400
128Mb
8Mx16
K4H281638O-LCCC
66-TSOP
400
Notes:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
8
DDR
2H 2010
www.samsung.com/semi/dram
Density
64Mb
128Mb
256Mb
512Mb
Notes:
Organization
Part Number
# Pins - Package
Speed (Mbps)
Refresh
Remarks
8Mx8
K4S640832N-LC75000
54-TSOP
133
4K
EOL with no replacement
4Mx16
K4S641632N-LC(L)(75/60)000
54-TSOP
133/166
4K
EOL with no replacement
16Mx8
K4S280832O-LC(L)75000
54-TSOP
133
4K
8Mx16
K4S281632O-LC(L)(75/60)000
54-TSOP
133/166
4K
64Mx4
K4S560432N-LC(L)75000
54-TSOP
133
8K
32Mx8
K4S560832N-LC(L)75000
54-TSOP
133
8K
16Mx16
K4S561632N-LC(L)(75/60)000
54-TSOP
133/166
8K
128Mx4
K4S510432D-UC(L)(75)000
54-TSOP
133
8K
EOL with no replacement
64Mx8
K4S510832D-UC(L)(75)000
54-TSOP
133
8K
EOL with no replacement
32Mx16
K4S511632D-UC(L)(75)000
54-TSOP
133
8K
EOL with no replacement
L = Commercial Temp., Low Power
For Industrial Temperature, check with SSI Marketing
Banks: 4
DRAM
SDRAM COMPONENTS
All products are Lead Free
Voltage: 3.3V
Speed: PC133 (133MHz CL=3/PC100 CL2)
RDRAM COMPONENTS
Density
Organization
Part Number
Speed (Mbps)
# Pins-Package
Refresh
Note
288M
x18
K4R881869I-DCT9000
1066
92-FBGA
16K/32ms
EOL in Aug'10
Notes:
All products are lead free
GRAPHICS DRAM COMPONENTS
Type
Density
Organization
Part Number
Package
VDD/VDDQ
Speed Bin (MHz)
GDDR5
1Gb
32Mx32
K4G10325FE-HC(1)
170-FBGA
1.5/1.5V
1800/2000/2500
1Gb
32Mx32
GDDR3
GDDR2
Status
K4J10324KE-HC(1)
136-FBGA
1.8V/1.8V
700/800/1000/1200
K4J52324QH-HC(1)
136-FBGA
1.8/1.8V
700/800
EOL Mar '10
K4J52324QH-HJ(1)
136-FBGA
1.9/1.9V
1000
EOL Mar '10
512Mb
16Mx32
K4J52324QH-HJ(1)
136-FBGA
2.05/2.05V
1200
EOL Mar '10
1Gb
64Mx16
K4N1G164QE-HC(1)
84-FBGA
1.8/1.8V
400/500
EOL Mar '10
512Mb
32Mx16
K4N51163QG-HC(1)
84-FBGA
1.8/1.8V
400/500
EOL Mar '10
K4D263238K-VC(1)
144-FBGA
2.5/2.5V
200/250
CuSmpl Oct '09
K4D263238K-UC(1)
100-TQFP
2.5/2.5V
200/250
K4D261638K-LC(1)
66-TSOPII
2.5/2.5V
200/250
4Mx32
GDDR1
128Mb
Notes:
Package:
(1) Speeds (clock cycle - speed bin):
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA (Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA (Lead Free)
H: FBGA (Halogen Free & Lead Free)
E: 100 FBGA (Halogen Free & Lead Free)
04: 0.4ns (2500MHz)
05: 0.5ns (2000MHz)
5C: 0.555 (1800MHz)
07: 0.71ns (1400MHz)
08: 0.83ns (1200MHz)
09: 0.90ns (1100MHz)
8Mx16
www.samsung.com/semi/dram
2H 2010
1A: 1ns (1000MHz)
11: 1.1ns (900MHz)
12: 1.25ns (800MHz)
14: 1.429ns (700MHz)
16: 1.667ns (600MHz)
20: 2.0ns (500MHz)
EOL Sep '10
22: 2.2ns (450MHz)
25: 2.5ns (400MHz)
2A: 2.86ns (350MHz)
33: 3.3ns (300MHz)
40: 4.0ns (240MHz)
50: 5.0ns (200MHz)
SDRAM, RDRAM & Graphics DRAM Components
9
Mobile-SDR/DDR
Density
Type
MSDR
256Mb
MDDR
MSDR
512Mb
MDDR
1Gb
2Gb
4Gb
MDDR
MDDR
MDDR
Organization
Part Number
Package
Power
Production
16Mx16
K4M56163PN-BG(1)
54-FBGA
1.8V
Now
8Mx32
K4M56323PN-HG(1)
90-FBGA
1.8V
Now
16Mx16
K4X56163PN-FG(1)
60-FBGA
1.8V
Now
8Mx32
K4X56323PN-8G(1)
90-FBGA
1.8V
Now
32Mx16
K4M51163PI-BG(1)
54-FBGA
1.8V
Now
16Mx32
K4M51323PI-HG(1)
90-FBGA
1.8V
Now
32Mx16
K4X51163PI-FG(1)
60-FBGA
1.8V
Now
16Mx32
K4X51323PI-8G(1)
90-FBGA
1.8V
Now
64Mx16
K4X1G163PE-FG(1)
60-FBGA
1.8V
Now
32Mx32
K4X1G323PE-8G(1)
90-FBGA
1.8V
Now
64Mx16
K4X1G163PF-FG(1)
60-FBGA
1.8V
MP Q1'11
32Mx32
K4X1G323PF-8G(1)
90-FBGA
1.8V
MP Q1'11
128Mx16
K4X2G163PC-FG(1)
60-FBGA
1.8V
Now
64Mx32
K4X2G323PC-8G(1)
90-FBGA
1.8V
Now
x32 (2CS, 2CKE)
K4X4G303PB-AG(1)
168-FBGA, 12x12 PoP, DDP
1.8V
Now
x32 (2CS, 2CKE)
K4X4G303PB-AG(1)
168-FBGA, 12x12 PoP, DDP
1.8V
Now
x32 (2CS, 2CKE)
K4X4G303PB-7G(1)
240-FBGA, 14x14 PoP, DDP
1.8V
Now
LPDDR2
Density
Type
Organization
Part Number
Package
Power
Production
512Mb
LPDDR2
1CH x32
K4P51323EI-AG(1)
168-FBGA, 12x12 PoP
1.8V
Now
1Gb
LPDDR2
1CH x32
K4P1G324EE-AG(1)
168-FBGA, 12x12 PoP
1.2V
Now
1CH x32
K4P2G324EC-AG(1)
168-FBGA, 12x12 PoP
1.2V
Now
K3PE3E300M-XG(1)
216-FBGA, 12x12 PoP
1.2V
Now
K3PE3E300A-XG(1)
240-FBGA, 14x14 PoP
1.2V
Now
K4P4G304EC-AG(1)
168-FBGA, 12x12 PoP, DDP
1.2V
Now
K3PE4E400M-XG(1)
216-FBGA, 12x12 PoP, DDP
1.2V
Now
K3PE4E400M-XG(1)
216-FBGA, 12x12 PoP, DDP
1.2V
Now
K3PE4E400A-XG(1)
240-FBGA, 14x14 PoP, DDP
1.2V
Now
2Gb
LPDDR2
2CH x32/ch
1CH x32
4Gb
Notes:
LPDDR2
2CH x32/ch
(1) Speed:
All products offered at Extended, Low, i-TCSR & PASR & DS (Temp, Power)
Mobile-SDR
60: 166MHz, CL3
75: 133MHz, CL3
Mobile-DDR
D8: 200MHz, CL3
C6: 166MHz, CL3
LPDDR2
C0: 667Mbps
C1: 800Mbps
10
Mobile SDR/DDR & LPDDR2
2H 2010
www.samsung.com/semi/dram
1
2
3
4
5
6
7
8
9
10
11
K
4
T
XX
XX
X
X
X
X
X
XX
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
Number of Internal Banks
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
1. Memory (K)
2. DRAM: 4
3. DRAM Type
B: DDR3 SDRAM
D: GDDR SDRAM
G: GDDR5 SDRAM
H: DDR SDRAM
J: GDDR3 SDRAM
M: Mobile SDRAM
N: SDDR2 SDRAM
S: SDRAM
T: DDR SDRAM
U: GDDR4 SDRAM
V: Mobile DDR SDRAM Power Efficient Address
W: SDDR3 SDRAM
X: Mobile DDR SDRAM
Y: XDR DRAM
Z: Value Added DRAM
4. Density
10: 1G, 8K/32ms
16: 16M, 4K/64ms
26: 128M, 4K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
68: 768M, 8K/64ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
5. Bit Organization
02: x2
04: x4
06: x4 Stack (Flexframe)
07: x8 Stack (Flexframe)
www.samsung.com/semi/dram
DRAM
COMPONENT DRAM ORDERING INFORMATION
08: x8
15: x16 (2CS)
16: x16
26: x4 Stack (JEDEC Standard)
27: x8 Stack (JEDEC Standard)
30: x32 (2CS, 2CKE)
31: x32 (2CS)
32: x32
6. # of Internal Banks
2: 2 Banks
3: 4 Banks
4: 8 Banks
5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V
4: LVTTL, 2.5V, 2.5V
5: SSTL-2 1.8V, 1.8V
6: SSTL-15 1.5V, 1.5V
8: SSTL-2, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
F: POD-15 (1.5V,1.5V)
H: SSTL_2 DLL, 3.3V, 2.5V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL-2 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
U: DRSL, 1.8V, 1.2V
8. Revision
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
M: 1st Generation
N: 14th Generation
Q: 17th Generation
2H 2010
9. Package Type
DDR SDRAM
L: TSOP II (Lead-free & Halogen-free)
H: FBGA (Lead-free & Halogen-free)
F: FBGA for 64Mb DDR (Lead-free & Halogen-free)
6: sTSOP II (Lead-free & Halogen-free)
T: TSOP II
N: sTSOP II
G: FBGA
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
Z: FBGA (Lead-free)
DDR2 SDRAM
Z: FBGA (Lead-free)
J: FBGA DDP (Lead-free)
Q: FBGA QDP (Lead-free)
H: FBGA (Lead-free & Halogen-free)
M: FBGA DDP (Lead-free & Halogen-free)
E: FBGA QDP (Lead-free & Halogen-free)
T: FBGA DSP (Lead-free & Halogen-free, Thin)
DDR3 SDRAM
Z: FBGA (Lead-free)
H: FBGA (Halogen-free & Lead-free)
Graphics Memory
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA(Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA(Lead Free)
H: FBGA(Hologen Free & Lead Free)
E: 100 FBGA(Hologen Free & Lead Free)
SDRAM
L TSOP II (Lead-free & Halogen-free)
N: STSOP II
T: TSOP II
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
DRAM Ordering Information
11
COMPONENT DRAM ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
K
4
T
XX
XX
X
X
X
X
X
XX
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
Number of Internal Banks
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
XDR DRAM
J: BOC(LF) P: BOC
Mobile DRAM
Leaded / Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X /Z: 54balls BOC Mono
J /V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
10. Temp & Power - COMMON
(Temp, Power)
C: Commercial, Normal (0’C – 95’C) & Normal
Power
C: (Mobile Only) Commercial (-25 ~ 70’C), Normal
Power
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
12
DRAM Ordering Information
DDR2 SDRAM
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
tRP=4)
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
DDR3 SDRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
tRP=8)
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
2H 2010
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
75: 7.5ns PC133 (133MHz CL=3)
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
Note: All of Lead-free or Halogen-free product are in
compliance with RoHS
www.samsung.com/semi/dram
1
2
3
4
5
6
7
8
9
10
11
12
13
M
X
XX
T
XX
X
X
X
X
X
X
XX
X
AMB Vendor
Speed
Temp & Power
PCB Revision
Package
Component Revision
SAMSUNG Memory
DIMM
Data bits
DRAM Component Type
Depth
Number of Banks
Bit Organization
1. Memory Module: M
2. DIMM Type
3: DIMM
4: SODIMM
3. Data bits
12: x72 184pin Low Profile Registered DIMM
63: x63 PC100 / PC133 μSODIMM with SPD for
144pin
64: x64 PC100 / PC133 SODIMM with SPD for
144pin (Intel/JEDEC)
66: x64 Unbuffered DIMM with SPD for
144pin/168pin (Intel/JEDEC)
68: x64 184pin Unbuffered DIMM
70: x64 200pin Unbuffered SODIMM
71: x64 204pin Unbuffered SODIMM
74: x72 /ECC Unbuffered DIMM with SPD for
168pin (Intel/JEDEC)
77: x72 /ECC PLL + Register DIMM with SPD for
168pin (Intel PC100)
78: x64 240pin Unbuffered DIMM
81: x72 184pin ECC unbuffered DIMM
83: x72 184pin Registered DIMM
90: x72 /ECC PLL + Register DIMM
91: x72 240pin ECC unbuffered DIMM
92: x72 240pin VLP Registered DIMM
93: x72 240pin Registered DIMM
95: x72 240pin Fully Buffered DIMM with SPD for
168pin (JEDEC PC133)
4. DRAM Component Type
B: DDR3 SDRAM (1.5V VDD)
L: DDR SDRAM (2.5V VDD)
S: SDRAM
T: DDR2 SDRAM (1.8V VDD)
5. Depth
09: 8M (for 128Mb/512Mb)
17: 16M (for 128Mb/512Mb)
16: 16M
28: 128M
29: 128M (for 128Mb/512Mb)
32: 32M
33: 32M (for 128Mb/512Mb)
51: 512M
52: 512M (for 512Mb/2Gb)
56: 256M
57: 256M (for 512Mb/2Gb)
59: 256M (for 128Mb/512Mb)
64: 64M
65: 64M (for 128Mb/512Mb)
1G: 1G
1K: 1G (for 2Gb)
6. # of Banks in Comp. & Interface
1: 4K/64mxRef., 4Banks & SSTL-2
2 : 8K/ 64ms Ref., 4Banks & SSTL-2
2: 4K/ 64ms Ref., 4Banks & LVTTL (SDR Only)
5: 8K/ 64ms Ref., 4Banks & LVTTL (SDR Only)
5: 4Banks & SSTL-1.8V
6: 8Banks & SSTL-1.8V
7. Bit Organization
0: x 4
3: x 8
4: x16
6: x 4 Stack (JEDEC Standard)
7: x 8 Stack (JEDEC Standard)
8: x 4 Stack
9: x 8 Stack
8. Component Revision
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
M: 1st Gen.
Q: 17th Gen.
www.samsung.com/semi/dram
DRAM
Module DRAM Ordering Information
2H 2010
9. Package
E: FBGA QDP (Lead-free & Halogen-free)
G: FBGA
H: FBGA (Lead-free & Halogen-free)
J: FBGA DDP (Lead-free)
M: FBGA DDP (Lead-free & Halogen-free)
N: sTSOP
Q: FBGA QDP (Lead-free)
T: TSOP II (400mil)
U: TSOP II (Lead-Free)
V: sTSOP II (Lead-Free)
Z: FBGA(Lead-free)
10. PCB Revision
0: Mother PCB
1: 1st Rev
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
A: Parity DIMM
S: Reduced PCB
U: Low Profile DIMM
11. Temp & Power
C: Commercial Temp. (0°C ~ 95°C) & Normal
Power
L: Commercial Temp. (0°C ~ 95°C) & Low Power
12. Speed
CC: (200MHz @ CL=3, tRCD=3, tRP=3)
D5: (266MHz @ CL=4, tRCD=4, tRP=4)
E6: (333MHz @ CL=5, tRCD=5, tRP=5)
F7: (400MHz @ CL=6, tRCD=6, tRP=6)
E7: (400MHz @ CL=5, tRCD=5, tRP=5)
F8: (533MHz @ CL=7, tRCD=7, tRP=7)
G8: (533MHz @ CL=8, tRCD=8, tRP=8)
H9: (667MHz @ CL=9, tRCD=9, tRP=9)
K0: (800MHz @ CL=10, tRCD=10, tRP=10)
7A: (133MHz CL=3/PC100 CL2)
13. AMB Vendor for FBDIMM
0, 5: Intel
1, 6, 8: IDT
9: Montage
Note: All of Lead-free or Halogen-free product are in
compliance with RoHS
DRAM Ordering Information
13
SLC Flash
MOQ
Family
Density
16Gb Mono
32Gb DDP
16Gb Based
64Gb QDP
128Gb ODP
64Gb DSP
32Gb QDP
8Gb Based
16Gb DDP
8Gb Mono
16Gb QDP
8Gb DDP
4Gb Based
4Gb Mono
2Gb Based
2Gb Mono
1Gb Based
1Gb Mono
512Mb Based
256Mb Based
512Mb Mono
256Mb Mono
Part Number
Package Type
SLC Flash
Vol(V)
Tray
T/R
-xxxx0xx
-xxx0Txx
Status
K9FAG08U0M-HCB0
BGA
X8
3.3
960
1000
E/S
K9FAG08S0M-HCB0
BGA
X8
1.8
960
1000
E/S
K9KBG08U1M-HCB0
BGA
X8
3.3
960
1000
E/S
K9KBG08S1M-HCB0
BGA
X8
1.8
960
1000
E/S
K9WCG08U5M-HCB0
BGA
X8
3.3
960
1000
E/S
K9WCG08S5M-HCB0
BGA
X8
1.8
960
1000
E/S
K9QDG08U5M-HCB0
BGA
X8
3.3
960
1000
E/S
K9QDG08S5M-HCB0
BGA
X8
1.8
960
1000
E/S
K9NCG08U5M-PCK0
TSOP1
x8
3.3
960
1000
M/P
K9WBG08U1M-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9WBG08U1M-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9KAG08U0M-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9KAG08U0M-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9F8G08U0M-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9F8G08U0M-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9WAG08U1D-SCB0
TSOP1 HF&LF
x8
3.3
960
1000
C/S
K9WAG08U1D-SIB0
TSOP1 HF&LF
x8
3.3
960
1000
C/S
K9WAG08U1B-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9WAG08U1B-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9WAG08U1B-KIB0
ULGA HF & LF
x8
3.3
960
2000
M/P
K9K8G08U0D-SCB0
TSOP1 HF&LF
X8
3.3
960
1000
C/S
K9K8G08U0D-SIB0
TSOP1 HF&LF
x8
3.3
960
1000
C/S
K9K8G08U0B-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9K8G08U0B-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9K8G08U1B-KIB0
ULGA HF & LF
x8
3.3
960
2000
M/P
K9F4G08U0D-SCB0
TSOP1 HF & LF
x8
3.3
960
1000
C/S
K9F4G08U0D-SIB0
TSOP1 HF& LF
X8
3.3
960
1000
C/S
K9F4G08U0B-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9F4G08U0B-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9F4G08U0B-KIB0
ULGA HF & LF
x8
3.3
960
2000
M/P
K9F2G08U0C-SCB0
TSOP-LF/HF
x8
3.3
960
1000
C/S
K9F2G08U0C-SIB0
TSOP-LF/HF
x8
3.3
960
1000
C/S
K9F2G08U0B-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9F2G08U0B-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9F1G08U0D-SCB0
TSOP-LF/HF
x8
3.3
960
1000
C/S
K9F1G08U0D-SIB0
TSOP-LF/HF
x8
3.3
960
1000
C/S
K9F1G08U0C-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9F1G08U0C-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9F1208U0C-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9F1208U0C-PIB0
TSOP1
x8
3.3
960
1000
M/P
K9F1208R0C-JIB0
63 FBGA(8.5x13)
x8
1.8
1120
-
M/P
K9F1208U0C-JIB0
63 FBGA(8.5x13)
x8
3.3
1120
-
M/P
K9F5608U0D-PCB0
TSOP1
x8
3.3
960
1000
M/P
K9F5608U0D-PIB0
TSOP1
x8
3.3
1000
1000
M/P
K9F5608R0D-JIB0
63 FBGA(9x11)
x8
1.8
1280
2000
M/P
K9F5608U0D-JIB0
63 FBGA(9x11)
x8
3.3
1280
2000
M/P
Please contact your local Samsung sales representative for latest product offerings.
14
Org.
Note: All parts are lead free
2H 2010
www.samsung.com/semi/flash
MLC Flash
Family
32Gb Based
2bit
16Gb Based
8Gb Based
3bit
32Gb Based
Density
Technology
Part Number
Org.
Vol(V)
Tray
T/R
-xxxx0xx
-xxx0Txx
32Gb Mono
27nm
K9HDG08U1A-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
64Gb DDP
27nm
K9LCG08U0A-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
128Gb QDP
27nm
K9GBG08U0A-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
16Gb Mono
32nm
K9GAG08U0E-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
Comments
32Gb DDP
32nm
K9LBG08U0E-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
64Gb QDP
32nm
K9HCG08U1E-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
8Gb Mono
32nm
K9G8G08U0C-SCB0
TSOP - Lead free & Halogen free
x8
3.3
960
1000
32Gb mono
32nm
K9CDG08U5A-MCB0001
LGA - Lead free & Halogen free
x8
3.3
840
-
Moving to
2xnm Q3'10
64Gb DDP
32nm
K9BCG08U1A-MCB0001
LGA - Lead free & Halogen free
x8
3.3
840
-
Moving to
2xnm Q3'10
128Gb QDP
32nm
K9ABG08U0A-MCB0001
LGA - Lead free & Halogen free
x8
3.3
840
-
Moving to
2xnm Q3'10
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
SD and MicroSD FLASH CARDS
Application
Density
Controller
2GB
SD Card
4GB
Contact your local Samsung rep for availability and ordering information
8GB
16GB
2GB
4GB
MicroSD Card
8GB
Contact your local Samsung rep for availability and ordering information
16GB
32GB
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
Solid State Drives (SSD)
Interface
SATA II (Native)
SATA II (Native)
Size
2.5"
mSATA
Connector
Thin SATA
mSATA
Controller
Comp.
MAX
16Gb
TMDDR Controller
32Gb Toggle-Mode DDR NAND
MAX
16Gb
Capacity
Part Number
64GB
MZ5PA064HMCD-0A000
128GB
MZ5PA128HMCD-0A000
256GB
MZ5PA256HMDR-0A000
512GB
Contact Sales
32GB
MZMPA032HMCD-00000
64GB
MZMPA064HMDR-00000
128GB
MZMPA128HMFU-00000
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
www.samsung.com/semi/flash
2H 2010
MLC Flash, SD/MicroSD Flash Cards & SSD
15
FLASH
Type
MOQ
Package
Type
FLASH Product Ordering Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
K
9
X
X
X
X
X
X
X
X
-
X
X
X
X
Pre-Program Version
Customer Bad Block
Temp
Package
--Generation
Mode
SAMSUNG Memory
NAND Flash
Small Classification
Density
Density
Organization
Organization
Vcc
1. Memory (K)
2. NAND Flash : 9
3. Small Classification
(SLC : Single Level Cell, MLC : Multi Level Cell)
7 : SLC moviNAND
8 : MLC moviNAND
F : SLC Normal
G : MLC Normal
H : MLC QDP
K : SLC DDP
L : MLC DDP
M : MLC DSP
N : SLC DSP
P : MLC 8 Die Stack
Q : SLC 8 Die Stack
S : SLC Single SM
T : SLC SINGLE (S/B)
U : 2 Stack MSP
W : SLC 4 Die Stack
4~5. Density
12 : 512M
56 : 256M
1G : 1G
2G : 2G
4G : 4G
8G : 8G
AG : 16G BG :
32G CG : 64G
DG : 128G
EG : 256G
LG : 24G
NG : 96G
ZG : 48G
00 : NONE
6~7. Organization
00 : NONE
08 : x8
16 : x16
16
Flash Ordering Information
8. Vcc
13. Temp
A : 1.65V~3.6V B : 2.7V (2.5V~2.9V)
C : 5.0V (4.5V~5.5V)
D : 2.65V (2.4V~2.9V)
E : 2.3V~3.6V R : 1.8V (1.65V~1.95V)
Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V
U : 2.7V~3.6V V : 3.3V (3.0V~3.6V)
W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE
9. Mode
0 : Normal
1 : Dual nCE & Dual R/nB
3 : Tri /CE & Tri R/B
4 : Quad nCE & Single R/nB
5 : Quad nCE & Quad R/nB
9 : 1st block OTP
A : Mask Option 1
L : Low grade
C : Commercial I : Industrial
0 : NONE (Containing Wafer, CHIP, BIZ, Exception
handling code)
14. Customer Bad Block
B : Include Bad Block
D : Daisychain Sample
L : 1~5 Bad Block
N : ini. 0 blk, add. 10 blk
S : All Good Block
0 : NONE (Containing Wafer, CHIP, BIZ, Exception
handling code)
15. Pre-Program Version
0 : None
Serial (1~9, A~Z)
10. Generation
M : 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
11. “ ----”
12. Package
A : COB
B : FBGA (Halogen-Free, Lead-Free)
C : CHIP BIZ D : 63-TBGA
F : WSOP (Lead-Free) G : FBGA
H : TBGA (Lead-Free)
I : ULGA (Lead-Free) (12*17)
J : FBGA (Lead-Free)
L : ULGA (Lead-Free) (14*18)
M : TLGA N : TLGA2
P : TSOP1 (Lead-Free)
Q : TSOP2 (Lead-Free)
S : TSOP1 (Halogen-Free, Lead-Free)
T : TSOP2 U : COB (MMC)
V : WSOP W : Wafer
Y : TSOP1 Z : WELP (Lead-Free)
2H 2010
www.samsung.com/semi/flash
Type
Density
72Mb
36Mb
18Mb
NtRAM
8Mb
4Mb
Organization
Part
Number
Package
Operating
Mode
Vdd
(V)
Access Time
tCD (ns)
Speed
tCYC (MHz)
I/O Voltage
(V)
Production
Status
2Mx36
K7N643645M
100-TQFP, 165FBGA
SPB
2.5
2.6, 3.5
250, 167
2.5
Mass Production
4Mx18
K7N641845M
100-TQFP, 165FBGA
SPB
2.5
2.6, 3.5
250, 167
2.5
Mass Production
1Mx36
K7N323635C
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
2Mx18
K7N321835C
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
1Mx36
K7M323635C
100-TQFP
FT
3.3, 2.5
7.5
118
3.3, 2.5
Mass Production
2Mx18
K7M321835C
100-TQFP
FT
3.3, 2.5
7.5
118
3.3, 2.5
Mass Production
1Mx18
K7N161831B
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
512Kx36
K7N163631B
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
1Mx18
K7M161835B
100-TQFP
FT (SB)
3.3
6.5
133
3.3, 2.5
Mass Production
512Kx36
K7M163635B
100-TQFP
FT (SB)
3.3
6.5
133
3.3, 2.5
Mass Production
256Kx36
K7N803601B
100-TQFP
SPB
3.3
3.5
167
3.3,2.5
Not for new designs
512Kx18
K7N801801B
100-TQFP
SPB
3.3
3.5
167
3.3,2.5
Not for new designs
256Kx36
K7N803609B
100-TQFP
SPB
3.3
2.6
250
3.3,2.5
Not for new designs
512Kx18
K7N801809B
100-TQFP
SPB
3.3
2.6
250
3.3,2.5
Not for new designs
256Kx36
K7N803645B
100-TQFP
SPB
2.5
3.5
167
2.5
Not for new designs
512Kx18
K7N801845B
100-TQFP
SPB
2.5
3.5
167
2.5
Not for new designs
256Kx36
K7N803649B
100-TQFP
SPB
2.5
2.6
250
2.5
Not for new designs
512Kx18
K7N801849B
100-TQFP
SPB
2.5
2.6
250
2.5
Not for new designs
512Kx18
K7M801825B
100-TQFP
FT
3.3
6.5
133
3.3, 2.5
Not for new designs
256Kx36
K7M803625B
100-TQFP
FT
3.3
6.5
133
3.3, 2.5
Not for new designs
128Kx36
K7N403609B
100-TQFP
SPB
3.3
3
200
3.3,2.5
Not for new designs
256Kx18
K7N401809B
100-TQFP
SPB
3.3
3
200
3.3,2.5
Not for new designs
256Kx18
K7B401825B
100-TQFP
SB
3.3
6.5
133
3.3, 2.5
Not for new designs
SPB and FT
4Mb
NOTES:
All TQFP products are lead free
NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz
NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns
Late-Write RR SRAM
Density
32Mb
8Mb
Organization
Part Number
Package
Operating
Mode
Vdd (V)
Access Time
tCD (ns)
Speed tCYC
(MHz)
I/O Voltage (V)
Production Status
1Mx36
K7P323674C
119-BGA
SP
1.8 / 2.5V
1.6, 2.0
300,250
1.5 (Max 1.8)
Mass Production
2Mx18
K7P321874C
119-BGA
SP
1.8 / 2.5V
1.6, 2.0
300,250
1.5 (Max 1.8)
Mass Production
256Kx36
K7P803611B
119-BGA
SP
3.3
1.6
300
1.5 (Max.2.0)
Mass Production
512Kx18
K7P801811B
119-BGA
SP
3.3
1.6
300
1.5 (Max.2.0)
Mass Production
256Kx36
K7P803666B
119-BGA
SP
2.5
2
250
1.5 (Max.2.0)
Mass Production
512Kx18
K7P801866B
119-BGA
SP
2.5
2
250
1.5 (Max.2.0)
Mass Production
www.samsung.com/semi/flash
2H 2010
NtRAM & Late Write RR SRAM
17
SR AM
NtRAM
DDR SYNCHRONOUS SRAM
Type
Density
16Mb
DDR
8Mb
Organization
Part
Number
Package
Vdd
(V)
Access Time
tCD (ns)
Cycle Time
(MHz)
I/O Voltage
(V)
Production
Status
512Kx36
K7D163674B
153-BGA
1.8~2.5
2.3
330, 300
1.5~1.9
Mass Production
1Mx18
K7D161874B
153-BGA
1.8~2.5
2.3
330, 300
1.5~1.9
Mass Production
256Kx36
K7D803671B
153-BGA
2.5
1.7/1.9/2.1
333, 330, 250
1.5 (Max 2.0)
Not for new designs
512Kx18
K7D801871B
153-BGA
2.5
1.7/1.9/2.1
333, 330, 250
1.5 (Max 2.0)
Not for new designs
K7I641882M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
4Mx18
K7I641884M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7J641882M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
72Mb
2Mx36
2Mx18
DDR
II CIO/
SIO
36Mb
1Mx36
1Mx18
18Mb
512Kx36
K7I643682M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
K7I643684M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7J643682M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
K7I321882C
165-FBGA
1.8
0.45
300,250
1.5,1.8
Mass Production
CIO-2B
K7I321884C
165-FBGA
1.8
0.45
300,250
1.5,1.8
Mass Production
CIO-4B
K7J321882C
165-FBGA
1.8
0.45
300,250
1.5,1.8
Mass Production
SIO-2B
K7I323682C
165-FBGA
1.8
0.45
300,250
1.5,1.8
Mass Production
CIO-2B
K7I323684C
165-FBGA
1.8
0.45
300,250
1.5,1.8
Mass Production
CIO-4B
K7J323682C
165-FBGA
1.8
0.45
300,250
1.5,1.8
Mass Production
SIO-2B
K7I161882B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
K7I161884B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7J161882B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
K7J163682B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
K7I163682B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
K7I163684B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7K3218T2C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K3218U2C
165-FBGA
1.8
0.45
400, 334
2.5
Mass Production
DDRII + CIO-2B,
2.5 clocks latancy
K7K3236T2C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K3236U2C
165-FBGA
1.8
0.45
400, 334
2.5
Mass Production
DDRII + CIO-2B,
2.5 clocks latancy
K7K1618T2C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K1618U2C
165-FBGA
1.8
0.45
400, 334
2.5
Mass Production
DDRII + CIO-2B,
2.5 clocks latancy
K7K1636T2C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K1636U2C
165-FBGA
1.8
0.45
400, 334
2.5
Mass Production
DDRII + CIO-2B,
2.5 clocks latancy
2Mx18
36Mb
1Mx36
DDR II+
CIO
1Mx18
18Mb
512Kx36
NOTES:
Comments
2B = Burst of 2
4B = Burst of 4
SIO = Separate I/O
CIO = Common I/O
For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
18
DDR I / II / II+
2H 2010
www.samsung.com/semi/sram
Type
Density
Organization
1Mx18
QDR I
18Mb
512Kx36
8Mx9
72Mb
4Mx18
2Mx36
4Mx9
QDR II
36Mb
2Mx18
1Mx36
2Mx9
18Mb
1Mx18
Part
Number
Package
Vdd
(V)
Access Time
tCD (ns)
Cycle Time
I/O Voltage
(V)
Production
Status
Comments
K7Q161862B
165-FBGA
1.8v / 2.5v
2.5
167
1.5,1.8
Mass Production
QDR I - 2B
K7Q161864B
165-FBGA
1.8v / 2.5v
2.5
167
1.5,1.8
Mass Production
QDR I - 4B
K7Q163662B
165-FBGA
1.8v / 2.5v
2.5
167
1.5,1.8
Mass Production
QDR I - 2B
K7Q163664B
165-FBGA
1.8v / 2.5v
2.5
167
1.5,1.8
Mass Production
QDR I - 4B
K7R640982M
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II-2B
K7R641882M
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II-2B
K7R641884M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II-4B
K7R643682M
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II-2B
K7R643684M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II-4B
K7R320982C
165-FBGA
1.8
0.45
167, 250, 200
1.5,1.8
Mass Production
QDR II-2B
K7R321882C
165-FBGA
1.8
0.45
167, 250, 200
1.5,1.8
Mass Production
QDR II-2B
K7R321884C
165-FBGA
1.8
0.45
200, 300, 250
1.5,1.8
Mass Production
QDR II-4B
K7R323682C
165-FBGA
1.8
0.45
300, 250, 200
1.5,1.8
Mass Production
QDR II-2B
K7R323684C
165-FBGA
1.8
0.45
200, 300, 250
1.5,1.8
Mass Production
QDR II-4B
K7R160982B
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II - 2B
K7R161882B
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II - 2B
K7R161884B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II - 4B
K7R163682B
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II - 2B
K7R163684B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II - 4B
K7S3236T4C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
QDR II +
4B, 2 clocks
latancy
K7S3236U4C
165-FBGA
1.8
0.45
400, 334
2.5
Mass Production
QDR II + 4B,
2.5 clocks
latancy
K7S3218T4C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
QDR II +
4B, 2 clocks
latancy
K7S3218U4C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
QDR II + 4B,
2.5 clocks
latancy
1Mx18
K7S1618T4C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
QDR II +
4B, 2 clocks
latancy
512Kx36
K7S1636U4C
165-FBGA
1.8
0.45
400, 333
1.5
Mass Production
QDR II + 4B,
2.5 clocks
latancy
512Kx36
1Mx36
36Mb
QDR II+
2Mx18
18Mb
NOTES:
For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4
For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit
For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended
For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed
www.samsung.com/semi/sram
2H 2010
QDR I / II / II+
19
SR AM
QDR SYNCHRONOUS SRAM
Synchronous SRAM Ordering Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
K
7
X
X
X
X
X
X
X
X
-
X
X
X
X
X
Packaging Type
Speed
Speed
Temp, Power
Package
--Generation
Vcc, Interface, Mode
SAMSUNG Memory
Sync SRAM
Small Classification
Density
Density
Organization
Organization
Vcc, Interface, Mode
1. Memory (K)
2. Sync SRAM: 7
3. Small Classification
A: Sync Pipelined Burst
B: Sync Burst
D: Double Data Rate
I: Double Data Rate II, Common I/O
J: Double Data Rate, Separate I/O
K: Double Data II+, Common I/O
M: Sync Burst + NtRAM
N: Sync Pipelined Burst + NtRAM
P: Sync Pipe
Q: Quad Data Rate I
R: Quad Data Rate II
S: Quad Data Rate II+
4~5. Density
80: 8M
40: 4M 64: 72M 16: 18M
32: 36M
09: x9
32: x32
8~9. Vcc, Interface, Mode
00: 3.3V,LVTTL,2E1D WIDE
01: 3.3V,LVTTL,2E2D WIDE
08: 3.3V,LVTTL,2E2D Hi SPEED
09: 3.3V,LVTTL,Hi SPEED
11: 3.3V,HSTL,R-R
12: 3.3V,HSTL,R-L
14: 3.3V,HSTL,R-R Fixed ZQ
22: 3.3V,LVTTL,R-R
23: 3.3V,LVTTL,R-L
25: 3.3V,LVTTL,SB-FT WIDE
30: 1.8/2.5/3.3V,LVTTL,2E1D
31: 1.8/2.5/3.3V,LVTTL,2E2D
35: 1.8/2.5/3.3V,LVTTL,SB-FT
44: 2.5V,LVTTL,2E1D
45: 2.5V,LVTTL,2E2D
20
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
11. “--”
6~7. Organization
08: x8 18: x18 36: x36 49: 2.5V,LVTTL,Hi SPEED
52: 2.5V,1.5/1.8V,HSTL,Burst2
54: 2.5V,1.5/1.8V,HSTL,Burst4
62: 2.5V/1.8V,HSTL,Burst2
64: 2.5V/1.8V,HSTL,Burst4
66: 2.5V,HSTL,R-R
74: 1.8V,2.5V,HSTL,All
82: 1.8V,HSTL,Burst2
84: 1.8V,HSTL,Burst4
88: 1.8V,HSTL,R-R
T2: 1.8V,2Clock Latency,Burst2
T4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
SRAM Ordering Information
WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
Sync Burst,Sync Burst + NtRAM
< Mode is R-L > (Clock Accesss Time)
65: 6.5ns
70: 7ns
75: 7.5ns
80: 8ns
85: 8.5ns
Other Small Classification (Clock Cycle Time)
10: 100MHz 11: 117MHz
13: 133MHz 14: 138MHz
16: 166MHz
20: 200MHz
25: 250MHz
26: 250MHz(1.75ns) 27: 275MHz
30: 300MHz 33: 333MHz
35: 350MHz
37: 375MHz
40: 400MHz(t-CYCLE) 42: 425MHz
45: 450MHz
50: 500MHz (except Sync Pipe)
16. Packing Type (16 digit)
12. Package
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
E: FBGA (LF)
Q: (L)QPF
P: (L)QFP(LF)
C: CHIP BIZ W: WAFER
13. Temp, Power
COMMON (Temp,Power)
0: NONE,NONE (Containing of error
handling code)
C: Commercial,Normal
E: Extended,Normal
I: Industrial,Normal
2H 2010
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL (In Mask ROM, divided
into TRAY, AMMO packing separately)
Type Component
Component
(Mask ROM)
Module
Packing Type New Marking
TAPE & REEL T
Other (Tray, Tube, Jar) 0 (Number)
Stack S
TRAY Y
AMMO PACKING A
MODULE TAPE & REEL P
MODULE Other Packing M
www.samsung.com/semi/sram
MCP: NAND/DRAM
Memory
NAND Density
1Gb
NAND & DRAM
2Gb
4Gb
DRAM Density (Org.)
Voltages (NAND-DRAM)
MCP Package
PoP Package
256Mb (x16,x32)
3.0V/1.8V - 1.8V
107/137FBGA
152FBGA
512Mb (x16,x32)
2.7V/1.8V - 1.8V
107/137FBGA
119/152FBGA
1Gb (x32)
1.8V - 1.8V
137FBGA
-
512Mb (x16,x32)
1.8V - 1.8V
107/137FBGA
119/152FBGA
1Gb (x16,x32)
1.8V - 1.8V
107/137FBGA
152/160/168FBGA
1Gb (x32)
2.7V - 1.8V
137FBGA
-
DRAM Density (Org.)
Voltages (NAND-DRAM)
MCP Package
PoP Package
256Mb (x32)
3.3V/1.8V - 1.8V
188FBGA
152FBGA
512Mb (x16,x32)
1.8V - 1.8V
167/202FBGA
152FBGA
MCP: OneNAND/DRAM
Memory
OneNAND Density
512Mb
1Gb
OneNAND & DRAM
2Gb
4Gb
512Mb (x16,x32)
1.8V - 1.8V
167/202FBGA
168FBGA
1Gb (x32)
1.8V - 1.8V
-
168FBGA
512Mb (x16,x32)
1.8V - 1.8V
-
152/160/168FBGA
1Gb (x16,x32)
1.8V - 1.8V
167/202FBGA
152/160/168FBGA
2Gb (x32)
1.8V - 1.8V
-
152/168FBGA
1Gb (x16)
1.8V - 1.8V
202FBGA
-
MCP: Flex-OneNAND/DRAM
Memory
Flex-OneNAND Density
DRAM Density (Org.)
Voltages (NAND-DRAM)
MCP Package
PoP Package
Flex-OneNAND
& DRAM
8Gb
2Gb (x32)
1.8V - 1.8V
202FBGA
-
MCP Package
PoP Package
Memory
Flex-OneNAND Density
DRAM Density (Org.)
Voltages (NAND-DRAM)
OneNAND & DRAM
& OneDRAM
2Gb
1Gb (x16)
1.8V - 1.8V
www.samsung.com/semi/mcp
2H 2010
MCP
MCP: OneNAND/DRAM/OneNAND
216FBGA
MCP
21
MCP: moviNAND/NAND/DRAM
Memory
movi & NAND Density
512Mb
moviNAND &
NAND & DRAM
1Gb
2Gb
4Gb
DRAM Density (Org.)
Voltages (NAND-DRAM)
MCP Package
256Mb(x16,x32)
2.7V/1.8V - 1.8V
107/137FBGA
512Mb (x16,x32)
2.7V/1.8V - 1.8V
107/137FBGA
256Mb (x16,x32)
3.0V/1.8V - 1.8V
107/137FBGA
512Mb (x16,x32)
2.7V/1.8V - 1.8V
107/137FBGA
1Gb (x32)
1.8V - 1.8V
137FBGA
512Mb (x16,x32)
1.8V - 1.8V
107/137FBGA
1Gb (x16,x32)
1.8V - 1.8V
107/137FBGA
1Gb (x32)
2.7V - 1.8V
137FBGA
UtRAM Density (Org.)
Voltages (NOR-UtRAM)
MCP Package
Remark
MCP: NOR/UtRAM
Memory
NOR Density
512Mb
NOR & UtRAM
256Mb
128Mb
128Mb
1.8V - 1.8V
107FBGA
128Mb
1.8V - 1.8V
107FBGA
1.8V - 1.8V
56FBGA
64Mb
1.8V - 1.8V
84/88FBGA
32Mb
1.8V - 1.8V
84/88FBGA
DRAM Density (Org.)
Voltages (NOR-DRAM)
Package
128Mb (x16)
1.8V - 1.8V
103FBGA
256Mb (x16)
1.8V - 1.8V
103FBGA
Remark
MCP: NOR/DRAM
Memory
NOR Density
NOR & DRAM
512Mb
Remark
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
22
MCP
2H 2010
www.samsung.com/semi/mcp
moviNAND™
moviNAND combines high-density MLC NAND Flash with an MMC controller in a single chip that has an MMC interface. moviNAND delivers dense, cost-effectice storage for embedded applications.
Density
Package Type
Org.
Vol (V)
Remarks
2GB
FBGA
x8
1.8/3.3
MMC 4.3 & MMC 4.4
4GB
FBGA
x8
1.8/3.3
8GB
FBGA
x8
1.8/3.3
16GB
FBGA
x8
1.8/3.3
32GB
FBGA
x8
1.8/3.3
64GB
FBGA
x8
1.8/3.3
Contact your local Samsung rep for availability and
ordering information.
Please contact your local Samsung sales representative for the latest product offerings.
Note: All parts are lead free
OneDRAM™
OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications.
Density
Part Number
Package Type
KJA51Z23PC-AAO
216FBGA (14x14)
512Mb
KJA51Y23PC-AAO
152FBGA (14x14)
Vol (V)
Temp.
Speed
1.8V
extended
133MHz
1.8V
extended
166MHz
A-port: x16 (SDR/DDR)
B-port: x16 (SDR/DDR)
A-port: x16 (SDR/DDR)
B-port: x16 (SDR/DDR)
A-port: x32SDR
KJA1GW25PD-EAO
B-port: x32DDR"
A-port: x16DDR
KJA1GZ45PD-EAO
1Gb
Org.
240FBGA (14x14)
KJA1GZ45PD-EAO
B-port: x32DDR"
A-port: x16DDR
B-port: x16DDR"
A-port: x16SDR
KJA1GY25PD-EAO
B-port: x32DDR"
FU SION
Please contact your local Samsung sales representative for the latest product offerings.
Note: All parts are lead free
www.samsung.com/semi/fusion
2H 2010
Fusion Memory
23
3.5" Hard Disk Drives
Family
F1DT
F2EG
F3
F3EG
F4
24
Capacity (GB)
RPM
Interface
Buffer
Sector
Model
80
7200
SATA 3.0 Gbps
8
512
HD083GJ
80
7200
SATA 3.0 Gbps
16
512
HD084GJ
160
7200
SATA 3.0 Gbps
8
512
HD161GJ
160
7200
SATA 3.0 Gbps
16
512
HD162GJ
250
7200
SATA 3.0 Gbps
8
512
HD251HJ
250
7200
SATA 3.0 Gbps
16
512
HD252HJ
320
7200
SATA 3.0 Gbps
8
512
HD321HJ
320
7200
SATA 3.0 Gbps
16
512
HD322HJ
500
7200
SATA 3.0 Gbps
8
512
HD501IJ
500
7200
SATA 3.0 Gbps
16
512
HD502IJ
640
7200
SATA 3.0 Gbps
16
512
HD642JJ
750
7200
SATA-2
16
512
HD752LJ
750
7200
SATA 3.0 Gbps
32
512
HD753LJ
1 TB
7200
SATA 3.0 Gbps
16
512
HD102UJ
1 TB
7200
SATA 3.0 Gbps
32
512
HD103UJ
500
5400
SATA 3.0 Gbps
16
512
HD502HI
1 TB
5400
SATA 3.0 Gbps
32
512
HD103SI
1.5 TB
5400
SATA 3.0 Gbps
32
512
HD154UI
160
7200
SATA 3.0 Gbps
8
512
HD164GJ
250
7200
SATA 3.0 Gbps
8
512
HD254GJ
320
7200
SATA 3.0 Gbps
8
512
HD324HJ
160
7200
SATA 3.0 Gbps
16
512
HD163GJ
250
7200
SATA 3.0 Gbps
16
512
HD253GJ
320
7200
SATA 3.0 Gbps
16
512
HD323HJ
500
7200
SATA 3.0 Gbps
16
512
HD502HJ
750
7200
SATA 3.0 Gbps
32
512
HD754JJ
1TB
7200
SATA 3.0 Gbps
32
512
HD103SJ
250
-
SATA 3.0 Gbps
16
512
HD253GI
320
-
SATA 3.0 Gbps
16
512
HD324HI
500
-
SATA 3.0 Gbps
16
512
HD503HI
750
-
SATA 3.0 Gbps
32
512
HD754JI
1TB
-
SATA 3.0 Gbps
32
512
HD105SI
1.5 TB
-
SATA 3.0 Gbps
32
512
HD153WI
2 TB
-
SATA 3.0 Gbps
32
512
HD203WI
160
7200
SATA 3.0 Gbps
8
512
HD165GJ
160
7200
SATA 3.0 Gbps
16
512
HD166GJ
250
7200
SATA 3.0 Gbps
8
512
HD255GJ
250
7200
SATA 3.0 Gbps
16
512
HD255GJ
320
7200
SATA 3.0 Gbps
16
512
HD323HJ
Hard Disk Drives
2H 2010
www.samsung.com/semi/hdd
3.5" Enterprise RAID Drives
Family
F1R
F3R
Capacity (GB)
RPM
Interface
Buffer
Sector
Model
250
7200
SATA 3.0 Gbps
16
512
HE252HJ
320
7200
SATA 3.0 Gbps
16
512
HE322HJ
500
7200
SATA 3.0 Gbps
16
512
HE502IJ
640
7200
SATA 3.0 Gbps
16
512
HE642JJ
750
7200
SATA 3.0 Gbps
32
512
HE753LJ
1 TB
7200
SATA 3.0 Gbps
32
512
HE103UJ
250
7200
SATA 3.0 Gbps
16
512
HE253GJ
500
7200
SATA 3.0 Gbps
16
512
HE502HJ
750
7200
SATA 3.0 Gbps
32
512
HE754JJ
1 TB
7200
SATA 3.0 Gbps
32
512
HE103SJ
Capacity (GB)
RPM
Interface
Buffer
Sector
Model
160
5400
SATA 3.0 Gbps
8
512
HM161GI
250
5400
SATA 3.0 Gbps
8
512
HM251HI
320
5400
SATA 3.0 Gbps
8
512
HM321HI
500
5400
SATA 3.0 Gbps
8
512
HM501JI
640
5400
SATA 3.0 Gbps
8
512
HM641JI
120
5400
SATA 3.0 Gbps
8
512
HM120JI
160
5400
SATA 3.0 Gbps
8
512
HM161JI
250
5400
SATA 3.0 Gbps
8
512
HM250II
320
5400
SATA 3.0 Gbps
8
512
HM320HI
400
5400
SATA 3.0 Gbps
8
512
HM400HI
500
5400
SATA 3.0 Gbps
8
512
HM500GI
250
7200
SATA 3.0 Gbps
16
512
HM250HJ
320
7200
SATA 3.0 Gbps
16
512
HM320HJ
500
7200
SATA 3.0 Gbps
16
512
HM500JJ
640
7200
SATA 3.0 Gbps
16
512
HM640JJ
750
5400
SATA 3.0 Gbps
8
512
HM750LI
1 TB
5400
SATA 3.0 Gbps
8
512
HM100UI
2.5" Hard Disk Drives
Family
M7E
M7
MP4
STOR A GE
MT2
www.samsung.com/hdd
2H 2010
Hard Disk Drives
25
BD-COMBO
Interface
Speed
Type
Loading
BD ROM READ 8X
H/H
Tray
BD ROM READ 12X
H/H
Tray
Lightscribe
Medel
X
TS-HB33A / SH-B083A
O
TS-HB33L / SH-B083L
X
TS-HB43A / SH-B123A
O
TS-HB43L / SH-B123L
TS-LB23A / SN-B043A
SATA
X
BD-ROM READ 4X
Slim
TS-LB23B
TS-LB23D
Tray
O
TS-LB23L / SN-B043L
TS-LB23P
Slot
O
TS-TB23L
DVD-W
Interface
Speed
Type
Loading
Lightscribe
Medel
DVD Write 22X
H/H
Tray
X
TS-H653G
SATA
DVD Write 20X
H/H
Tray
X
TS-H653H
DVD Write 20X
H/H
Tray
X
TS-H653J
DVD Write 22X
H/H
Tray
X
TS-H662A / SH-S222A
PATA
SATA
PATA
SATA
DVD Write 22X
H/H
Tray
X
TS-H663C / SH-S223C
DVD Write 24X
H/H
Tray
X
TS-H663D / SH-S243D
DVD Write 22X
H/H
Tray
O
TS-H653R
DVD Write 16X
H/H
Tray
O
TS-H653T
DVD Write 22X
H/H
Tray
O
TS-H662L / SH-S222L
DVD Write 22X
H/H
Tray
O
TS-H663L / SH-S223L
DVD Write 24X
H/H
Tray
O
TS-H663N / SH-S243N
TS-L633B / SN-S083B
X
Tray
TS-L633N / SN-S083N
O
TS-L633R / SN-S083R
X
TS-T633C / SN-T083C
DVD Write 8X
TS-L633Y
Slot
Tray
O
X
Ultra Slim
Slot
26
Optical Disk Drives
TS-L633F / SN-S083F
TS-L633J
Slim
SATA
TS-L633C / SH-S083C
2H 2010
X
TS-T633P
TS-U633F
TS-U633J / SU-S083J
TS-D633A
TS-D633C
www.samsung.com/hdd
DVD-W Slim External
Interface
USB 2.0
Speed
DVD Write 8X
Type
Loading
Lightscribe
Medel
Slim
Tray
X
SE-S084C
Ultra Slim
Tray
X
SE-S084D
Slim
Tray
X
SE-S084F
Slot
O
SE-T084P
DVD-ROM
Interface
SATA
Speed
Type
Loading
Lightscribe
Medel
DVD 16X
H/H
Tray
X
TS-H353C / SH-D163J
DVD 8X
Slim
Tray
X
DVD 8X
Utra Slim
Tray
X
TS-L333B
TS-L333D
TS-U333A
DVD-W Loader
Speed
Type
Loading
Lightscribe
Medel
DVD 8X
H/H
Tray
X
TS-P632F
STOR A GE
Interface
PATA
www.samsungodd.com
2H 2010
Optical Disk Drives
27
Memory
System LSI
DRAM
Flash
SRAM
MCP
Fusion
ASICs
APs
Display Drivers
Imaging ICs
Foundry
Storage
Solid State Drives
Hard Drives
Optical Disc Drives
LCD Panels
TV
Monitors
Notebook PC
Mobile
Samsung Semiconductor, Inc.
3655 North First Street
San Jose, CA 95134-1713
www.samsung.com/us/business/components
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of
publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences
resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products
or product specifications with the intent to improve function or design at any time and without notice and is not
required to update this documentation to reflect such changes. This publication does not convey to a purchaser of
semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes
no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does
Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any
and all liability, including without limitation any consequential or incidental damages.
Copyright 2010. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co.,
Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates,
figures, diagrams and tables are subject to change at any time, without notice.
BR-10-ALL-001 Printed 07/10