SAMSUNG K4N26323AE-GC20

128M GDDR2 SDRAM
K4N26323AE-GC
128Mbit GDDR2 SDRAM
1M x 32Bit x 4 Banks
GDDR2 SDRAM
with Differential Data Strobe and DLL
Revision 1.7
January 2003
Samsung Electronics reserves the right to change products or specification without notice.
- 1 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Revision History
Revision 1.7 (January 23, 2003)
- Changed the device name from GDDR-II to GDDR2
Revision 1.6 (December 18, 2002)
- Typo corrected
Revision 1.5 (December 4, 2002)
- Typo corrected
Revision 1.4 (November 12, 2002)
- Changed the device name from DDR-II to GDDR-II
- Typo corrected
Revision 1.3 (November 8, 2002)
- Typo corrected
Revision 1.2 (November 5, 2002)
- Typo corrected
- Changed the Icc6 from 3mA to 7mA
Revision 1.1 (October 30, 2002)
- Typo corrected
Revision 1.0 (September 30, 2002)
- Changed tCK(max) from 4.5ns to 4.0ns
Revision 0.7 (September 12, 2002)
- Added IBIS curve in the spec
- Defined DC spec
- Typo corrected
- Defined Burst Write with AP (AL=0) Table.
- Defined On-die Termination Status of 2Banks System Table.
- Changed CIN1,CIN2,CIN3,Cout and CiN4 from 3.5pF to 3.0pF
- Removed CL(Cas Latency) 8 from the spec
- Changed VDD form 2.5V + 5% to 2.5V + 0.1V
- Changed speed bin from 500/400/333MHz to 500/450/400MHz
- Changed EMRS table
Revision 0.6 (February 28, 2002)
- Changed WL(write latency) from RL(read latency) -1 to AL(additive latency) +1
- Changed tIH/tSS during EMRS from 5ns to 0.5tCK
- Changed tRCDWR
- Changed package ball location of CK, /CK, CKE
- 2 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Revision 0.5 (January 2002)
- Eliminated DLLEN pin
- Power-up sequence
Revision 0.4 (January 2002)
- Changed EMRS Table
- Changed Self-Refresh exit mode
- Changed On-die Termination Control
- Changed OCD Control method
- Power-up sequence
Revision 0.3 (December 2001)
- Noted the ball names changed from DDR-1 and exchanged DQS and /DQS ball location.
- Added On-die termination control
- Changed OCD align mode entry / exit timing
- Added target value of Data & DQS input/output capacitance(DQ0~DQ31)
- Added Table for auto precharge control
- Typo corrected.
Revision 0.2 (November 2001)
- Data Strobe Scheme is changed from DQS separation of Read DQS, Write DQS to Differential and Bi-directional DQS
- OCD adjustment
- Controlled DQ is changed from DQ0, WDQS2 to DQ23, DQS2 and /DQS2
Revision 0.1 (October 2001)
- Data Strobe Scheme is changed from Bi-directional DQS to DQS separation to Read DQS, Write DQS
- Package Ball layout is changed for mirror package.
- OCD adjustment
Controlled DQ is changed from DQ0, DQS0 to DQ23, WDQS2
- Added DM descriptions
- 1bank, 2bank system
- Added System Selection mode in EMRS table.
Revision 0.0 (August 2001)
- 3 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
1M x 32Bit x 4 Banks GDDR2 Synchronous DRAM
with Differential Data Strobe
FEATURES
• 2.5V + 0.1V power supply for device operation
• Differential Data Strobes for Data-in, Date out ;
• 1.8V + 0.1V power supply for I/O interface
- 4 DQS and /DQS(one differential strobe per byte)
• On-Die Termination for all inputs except CKE,ZQ
- Single Data Strobes by EMRS.
• Output Driver Strength adjustment by EMRS
• Edge aligned data & data strobe output
• SSTL_18 compatible inputs/outputs
• Center aligned data & data strobe input
• 4 banks operation
• DM for write masking only
• MRS cycle with address key programs
• Auto & Self refresh
• 32ms refresh period (4K cycle)
- CAS latency : 5, 6, 7 (clock)
- Burst length : 4 only
(16ms is under consideration)
- Burst type : sequential only
• 144 Ball FBGA
• Additive latency (AL): 0,1(clock)
• Maximum clock frequency up to 500MHz
• Read latency(RL) : CL+AL
• Maximum data rate up to 1Gbps/pin
• Write latency(WL) : AL+1
• DLL for Address, CMD and outputs
ORDERING INFORMATION
Part NO.
Max Freq.
Max Data Rate
K4N26323AE-GC20
500MHz
1000Mbps/pin
K4N26323AE-GC22
450MHz
900Mbps/pin
K4N26323AE-GC25
400MHz
800Mbps/pin
Interface
Package
SSTL_18
144 Ball FBGA
GENERAL DESCRIPTION
FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM
The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words
by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory
system applications.
- 4 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
PIN CONFIGURATION
Normal Package (Top View)
2
3
4
5
6
7
8
9
10
11
12
13
B
DQS0
/DQS0
VSSQ
DQ3
DQ2
DQ0
DQ31
DQ29
DQ28
VSSQ
/DQS3
DQS3
C
DQ4
DM0
VDDQ
VDDQ
DQ1
VDDQ
VDDQ
DQ30
VDDQ
VDDQ
DM3
DQ27
D
DQ6
DQ5
VSSQ
VSSQ
VSSQ
VDD
VDD
VSSQ
VSSQ
VSSQ
DQ26
DQ25
E
DQ7
VDDQ
VDD
VSS
VSSQ
VSS
VSS
VSSQ
VSS
VDD
VDDQ
DQ24
F
DQ17
DQ16
VDDQ
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
VDDQ
DQ15
DQ14
G
DQ19
DQ18
VDDQ
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
VDDQ
DQ13
DQ12
H
DQS2
/DQS2
NC
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
NC
/DQS1
DQS1
J
DQ20
DM2
VDDQ
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
VDDQ
DM1
DQ11
K
DQ21
DQ22
VDDQ
VSSQ
VSS
VSS
VSS
VSS
VSSQ
VDDQ
DQ9
DQ10
L
DQ23
A3
VDD
VSS
RFU2
VDD
VDD
RFU1
VSS
VDD
A4
DQ8
M
VREF
A2
A10
/RAS
NC
CKE
NC
ZQ
/CS
A9
A5
VREF
N
A0
A1
A11
BA0
/CAS
CK
/CK
/WE
BA1
A8/AP
A6
A7
NOTE :
1. RFU1 is reserved for A12
2. RFU2 is reserved for BA2
3. (M,13) VREF for CMD and ADDRESS
4. (M,2) VREF for Data input
- 5 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
PIN CONFIGURATION
Mirror Package (Top View)
2
3
4
5
6
7
8
9
10
11
12
13
B
DQS3
/DQS3
VSSQ
DQ28
DQ29
DQ31
DQ0
DQ2
DQ3
VSSQ
/DQS0
DQS0
C
DQ27
DM3
VDDQ
VDDQ
DQ30
VDDQ
VDDQ
DQ1
VDDQ
VDDQ
DM0
DQ4
D
DQ25
DQ26
VSSQ
VSSQ
VSSQ
VDD
VDD
VSSQ
VSSQ
VSSQ
DQ5
DQ6
E
DQ24
VDDQ
VDD
VSS
VSSQ
VSS
VSS
VSSQ
VSS
VDD
VDDQ
DQ7
F
DQ14
DQ15
VDDQ
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
VDDQ
DQ16
DQ17
G
DQ12
DQ13
VDDQ
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
VDDQ
DQ18
DQ19
H
DQS1
/DQS1
NC
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
NC
/DQS2
DQS2
J
DQ11
DM1
VDDQ
VSSQ
NC,
VSS
NC,
VSS
NC,
VSS
NC,
VSS
VSSQ
VDDQ
DM2
DQ20
K
DQ10
DQ9
VDDQ
VSSQ
VSS
VSS
VSS
VSS
VSSQ
VDDQ
DQ22
DQ21
L
DQ8
A4
VDD
VSS
RFU1
VDD
VDD
RFU2
VSS
VDD
A3
DQ23
M
VREF
A5
A9
/CS
ZQ
NC
CKE
NC
/RAS
A10
A2
VREF
N
A7
A6
A8/AP
BA1
/WE
/CK
CK
/CAS
BA0
A11
A1
A0
* Under consideration
- 6 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
INPUT/OUTPUT FUNCTIONAL DESCRIPTION
Symbol
Type
Function
Input
Clock: CK and CK are differential clock inputs. CMD, ADD inputs are sampled on the crossing of the positive
edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both directions of crossing).
CKE
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers
and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle),
or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self
refresh entry. CKE is asynchronous for self refresh exit. CKE must be maintained high throughout read and write
accesses. Input buffers, excluding CK, CK and CKE are disabled during power-down. Input buffers, excluding
CKE, are disabled during self refresh.
CS
Input
Chip Select: All commands are masked when CS is registered HIGH. CS provides for external bank selection on
systems with multiple banks. CS is considered part of the command code.
RAS,
CAS,
WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM0
~DM3
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH
coincident with that input data during a Write access. DM is sampled on both edges of clock. Although DM pins
are input only, the DM loading matches the DQ and DQS loading.
BA0,
BA1
Input
Bank Address Inputs: BA0 and BA1 define to which bank an Active, Read, Write or Precharge command is
being applied. BA0 also determines if the mode register or extended mode register is to be accessed during a
MRS or EMRS cycle.
Input
Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit
for Read/Write commands to select one location out of the memory array in the respective bank. A8 is sampled
during a Precharge command to determine whether the Precharge applies to one bank (A8 LOW) or all banks (A8
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide
the op-code during Mode Register Set commands.
CK, CK
A0 A11
DQ
Input/ Data Input/ Output: Bi-directional data bus.
Output
Data Strobe: output with read data, input with write data for source synchronous operation.Edge-aligned with
read data, centered in write data.
DQS0~
DQS3
DQS0~
DQS3
Input/
Output
NC/
RFU
DQS Scheme
Differential DQS per byte
DQS0, DQS0
DQS0 for DQ0-DQ7
DQS1, DQS1
DQS1 for DQ8-DQ15
DQS2, DQS2
DQS2 for DQ16-DQ23
DQS3, DQS3
DQS3 for DQ24-DQ31
No Connect: No internal electrical connection is present.
VDDQ
Supply DQ Power Supply: 1.8V ± 0.1V
VSSQ
Supply DQ Ground
VDD
Supply Power Supply: 2.5V ± 0.1V
VSS
Supply Ground
VREF
Supply Reference voltage: half Vddq ,
2 Pins : (M,2) for Data input , (M,13) for CMD and ADDRESS
ZQ
input
Resistor connection pin for On-die termination.
The value of Resistor = 2 X (target value (Rterm) of termination resistance of DQ pin of each chip)
- 7 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
BLOCK DIAGRAM (1Mbit x 32I/O x 4 Bank)
DQS , DQS
Input Buffer
CK, CK
32
Input DLL
Input Buffer
I/O Control
Data Input Register
Serial to parallel
Bank Select
LWE
LDMi
128
1M x 32
32
Output Buffer
1M x 32
128
4-bit prefetch
Sense AMP
Row Decoder
Refresh Counter
Row Buffer
ADDR
Address Register
iCK
1M x 32
x32
DQi
1M x 32
Column Decoder
Col. Buffer
LCBR
LRAS
Latency & Burst Length
LRAS LCBR
Strobe
Gen.
Programming Register
LCKE
Output
DLL
DQS, DQS
LWE
LCAS
LWCBR
CK,CK
LDMi
Timing Register
iCK
CKE
CS
RAS
CAS
WE
DMi
* iCK : internal clock
- 8 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
FUNTIONAL DESCRIPTION
Simplified State Diagram
Power
Applied
Power
On
DLL
Enable
Self
Refresh
Precharge
PREALL
REFS
REFSX
MRS
EMRS
MRS
Auto
Refresh
REFA
Idle
CKEL
CKEH
Active
Power
Down
ACT
Precharge
Power
Down
CKEH
CKEL
Row
Active
Read
Write
Write A
Write
Write
Read A
Read
Read
Read A
Write A
Read
A
PRE
Write
A
PRE
PRE
PRE
Read
A
Precharge
PREALL
Automatic Sequence
Command Sequence
PREALL = Precharge All Banks
MRS = Mode Register Set
EMRS = Extended Mode Register Set
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
REFA = Auto Refresh
CKEL = Enter Power Down
CKEH = Exit Power Down
ACT = Active
Write A = Write with Autoprecharge
Read A = Read with Autoprecharge
PRE = Precharge
- 9 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Power-Up Sequence
GDDR2 SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
1. Power Up Sequence
- Apply Power and Keep CKE at low state. (All other inputs may be undefined)
- Apply VDD before VDDQ.
- Apply VDDQ before VREF.
- Start low frequency clock(100MHz) and maintain stable condition for minimum 200us.
- The minimum of 200us after stable power and clock (CK, /CK), apply NOP and take CKE to be high.
- Issue precharge command for all banks of the device ( tS/tH =0.5tCK).
- Issue EMRS command to initialize DRAM with DLL OFF and On-die Termination OFF( tS/tH=0.5tCK) .
BA1 BA0 A11
0
1
0
A10
A9
A8
X
A7
A6
X
A5
0
A4
X
A3
A2
0
0
A1
Address Bus
A0
Extended Mode
Register
X
- Issue EMRS command to control DLL and decide on-die termination state.
Within 100 clocks after issuing EMRS command for DLL on, stable high frequency clock should be supplied to DRAM.
BA1 BA0 A11
0
1
0
A10
A9
A8
V
A7
A6
V
A5
1
A4
V
A3
A2
V
V
A1
Address Bus
A0
Extended Mode
Register
V
(V=Valid value)
- The additional 1ms clock cycles are required to lock the DLL and determine value of on-die termination after issuing
EMRS command or supplying stable clock from a controller.
Apply NOP during Locking DLL to protect invalid command.
- Issue precharge command for all banks of the device.
- Issue EMRS command
- Issue at least 10 or more Auto refresh command to update the value of on-die termination.
- Issue a MRS command to initialize the mode register.
- Issue any command.
Power up & Initialization Sequence
CKE
200 us
< 100tCK
1ms
CK,CK
low freq. (> 100Mhz)
stable high freq.
tRP
tMRD
tRFC
4 Clock min.
tRFC
~
CMD
tRP
NOP
Precharge
all banks
NOP
EMRS1
NOP
EMRS2
NOP
Precharge
all banks
EMRS 1st Auto
Refresh
10th Auto
Refresh
MRS
Any
Command
* Minimum setup/hold time tIS, tIHmin = 0.5tCK at the Low frequency without DLL
* Within 100 tCK after issuing EMRS2, PLL(DLL) of controller should be enabled.
* During changing clock frequency, the changing rate should be smaller than 100ps/30tCK
- 10 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
MODE REGISTER SET(MRS)
The mode register stores the data for controlling the various operating modes of GDDR2 SDRAM. It programs CAS
latency, addressing mode, test mode and various vendor specific options to make GDDR2 SDRAM useful for variety of different applications. The default value of the mode register is not defined, therefore the mode register must be written after
EMRS setting for proper operation. The mode register is written by asserting low on CS, RAS, CAS and WE (The GDDR2
SDRAM should be in active mode with CKE already high prior to writing into the mode register). The state of address pins
A0 ~ A11 and BA0, BA1 in the same cycle as CS, RAS, CAS and WE going low is written in the mode register. Minimum
four clock cycles are requested to complete the write operation in the mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state.
The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2, addressing
mode uses A3, CAS latency (read latency from column address) uses A4 ~ A6. A7 is used for test mode. A9 ~ A11 are
used for tWR. Refer to the table for specific codes for various addressing modes and CAS latencies.
BA1
BA0
0
0
A11
A10
A9
tWR
A8
A7
0
TM
A6
A5
A4
A3
CAS Latency
A2
BT
A1
A0
Burst Length
Address Bus
Mode Register
*
Burst Length
Test Mode
A7
BA0
mode
An ~ A0
0
Normal
0
MRS
1
Test
1
EMRS
A2
A1
A0
0
1
0
Burst Length
4
Burst Type
0
tWR
*1
A3
Burst Type
0
Sequential
CAS Latency
A11
A10
MRS Select
A6
A5
A4
Latency
0
0
A9
0
Reserved
0
0
0
Reserved
0
0
1
Reserved
0
0
1
Reserved
0
1
0
3
0
1
0
Reserved
0
1
1
4
0
1
1
Reserved
1
0
0
5
1
0
0
Reserved
1
0
1
Reserved
1
0
1
5
1
1
0
Reserved
1
1
0
6
1
1
1
Reserved
1
1
1
7
*1. BL 4, Sequential Only
- 11 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
EXTENDED MODE REGISTER SET(EMRS)
The extended mode register stores the data output driver strength and on-die termination options. The
extended mode register is written by asserting low on CS, RAS, CAS, WE and high on BA0(The GDDR2
SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register). The state of address pins A0 ~ A11 and BA0 in the same cycle as CS, RAS, CAS and WE going low are
written in the extended mode register. Four clock cycles are required to complete the write operation in the
extended mode register. 8 kinds of the output driver strength are supported by EMRS (A9, A8, A7) code. The
mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. "High" on BA0 is used for EMRS. Refer to the table for specific
codes.
BA1
BA0
0
1
A11
0
A10
ODT.R
A9
A8
A7
Output driver strength
A6
A5
A4
A3
DLL
DQS
A.L
ODT control
DLL *1
BA0
An ~ A0
0
MRS
1
EMRS
A6
DLL
0
DLLOFF
1
DLLON
DQS*2
A10
mode
0
ON
1
OFF
A9
A8
A7
Ron[ohm]
0
0
0
60
0
0
1
55
0
1
0
50
0
1
1
45
1
0
0
40
1
0
1
35
1
1
0
30
1
1
1
25
Address Bus
A0
ODT option
Extended
Mode Register
On-die Termination option
for CMD & ADDR*1
A1
A0
Value
0
0
OFF
0
1
X1
DQS
1
0
X2
Differential
1
1
X4
1
Single
Additive Latency
Output Driver Strength Option
A1
0
A5
ODT of DQs @ RD
A2
A4
Latency
0
0
1
1
OFF : On-die Termination of CMD
and ADDR pins on DRAM is off
X1 : On-die Termination value of
CMD and ADD pins are same as
the value of DQ
X2 : 2 times of the value of DQ
X4 : 4 times of the value of DQ
On-Die Termination Mode *1
A3
A2
0
0
ODT OFF
Value
0
1
ODT Cal. ON
1
0
Rterm=60
1
1
Rterm=120
*1. DLL control,ODT control,and ODT option command should be issued at low frequency clock(<100Mhz) with tIS/tIH=0.5tCK
*2. When single DQS is selected, 4 /DQS pins should be connected to VREF.
- 12 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
DQS
500MHz
450MHZ
Differential DQS
400MHz
Differential DQS
Single DQS
Differential DQS
* To support existing DDR-I user , single DQS is supported under 400MHz by EMRS option, When single DQS is
selected, 4 /DQS pins should be connected to VREF.
Differntial DQS Timing (CL5, BL4)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
13
14
15
16
17
18
19
20
CK, CK
CMD
WRITE
READ
DQS
DQS
DQ
Dout0 Dout1 Dout2 Dout3
Din0 Din1 Din2 Din3
Single DQS Timing (CL5, BL4)
0
1
2
3
4
5
6
7
8
9
10
11
12
CK, CK
CMD
WRITE
READ
DQS
DQS
DQ
Vref Level
Dout0 Dout1 Dout2 Dout3
Din0 Din1 Din2 Din3
- 13 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Bank Activate Command
The Bank Activate command is issued by holding CAS and WE high with CS and RAS low at the rising edge of the clock.
The bank addresses BA0 and BA1 are used to select the desired bank. The row address A0 through A11 is used to determine which row to activate in the selected bank. The Bank Activate command must be applied before any Read or Write
operation can be executed. Immediately after the bank active command, the GDDR2 SDRAM can accept a read or write
command on the following clock cycle. If a R/W command is issued to a bank that has not satisfied the tRCDmin specification, then additive latency must be programmed into the device to delay when the R/W command is internally issued to
the device. The additive latency value must be chosen to assure tRCDmin is satisfied.
Additive latencies of (0,1) are supported. Once a bank has been activated it must be precharged before another Bank
Activate command can be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP,
respectively. The minimum time interval between successive Bank Activate commands to the same bank is determined
by the RAS cycle time of the device (tRC), which is equal to tRAS + tRP. The minimum time interval between Bank Activate commands, Bank 0,1, 2, 3 (in any order), is the Bank to Bank delay time (tRRD).
Bank Activate Command Cycle : CL=7, tRCD=9, AL=1, tRP=8, tRRD=5, tCCD=2, tRAS=19
0
1
2
3
4
5
8
Bank B
Activate
Post CAS
Read A
9
13
14
15
16
17
18
19
24
27
Bank A
Precharge
Bank B
Precharge
Bank A
Activate
CK, CK
tRRD = 5
CMD
Bank A
Activate
Post CAS
Read B
Additive Latency
tRP = 8
Additive Latency
tRCD = 9
DQS
tRAS = 19
CAS Latency
Dout0 Dout1 Dou2 Dout3
DQ
internal Read
Command Start
(Bank A)
internal Read
Command Start
(Bank B)
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting RAS high, CS and
CAS low at the clock’s rising edge. The WE must also be defined at this time to determine whether the access cycle is a
read operation (WE high) or a write operation (WE low).
A new burst access must not interrupt the previous 4 bit burst operation. The minimum CAS to CAS delay is defined by
tCCD, and is a minimum of 2 clocks for read or write cycles.
Write Latency
The Write Latency(WL) is always defined as AL(Additive Latency)+1 where Read Latency is defined as the sum of additive latency plus CAS latency (RL=AL+CL).
- 14 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Posted CAS
Posted CAS operation is supported to make command and data bus efficient for sustainable bandwidths in GDDR2
SDRAM. In this operation, the GDDR2 SDRAM allows a CAS read or write command to be issued tRCDmin or 1 tCK earlier than tRCDmin after the RAS bank activate command. The command is held for the time of the Additive Latency (AL)
before it is issued inside the device. The Read Latency (RL) is controlled by the sum of AL and the CAS latency (CL).
Therefore if a user chooses to issue a R/W command before the tRCDmin, then AL (greater than 0) must be written into
the EMRS.
Examples of posted CAS operation
Example 1
Read followed by a write to the same bank
[AL = 1, tRCD = 9, CL = 7, RL = (AL + CL) = 8, WL = (AL + 1) = 2]
0
7
8
13
14
15
16
17
18
19
20
21
22
23
21
22
CK, CK
CMD
Active
A-Bank
Write
A-Bank
Read
A-Bank
tRL
DQS
tWL
Dout0 Dout1
DQ
Dou2 Dout3
Din0
Din1
Din2
Din3
tHZ
tHZ > 1 tCK
Example 2
Read followed by a write to the same bank
[AL = 0, tRCD = 9, CL = 7, RL = (AL + CL) = 7, WL = (AL + 1) = 1]
0
1
8
9
14
15
16
17
18
19
20
CK, CK
CMD
Active
A-Bank
Read
A-Bank
Write
A-Bank
RL
DQS
tRCD
tWL
Dout0 Dout1 Dout2 Dout3
DQ
- 15 -
Din0
Din1
Din2
Din3
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Read Command
The Burst Read command is initiated by having CS and CAS low while holding RAS and WE high at the rising edge of the
clock. The address inputs determine the starting column address for the burst. The delay from the start of the command to
when the data from the first cell appears on the outputs is equal to the value of the read latency (RL). The data strobe output (DQS) is driven low 1 clock before valid data (DQ) is driven onto the data bus. The first bit of the burst is synchronized
with the rising edge of the data strobe (DQS). Each subsequent data-out appears on the DQ pin in phase with the DQS
signal in a source synchronous manner. The RL is equal to an additive latency (AL) plus CAS latency (CL). The CL is
defined by the Mode Register Set (MRS), similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the
Extended Mode Register Set (EMRS).
Burst Read Operation: RL = 8 (AL = 1, CL = 7)
0
1
2
7
8
9
10
11
12
13
Posted CAS
READ A
NOP
Post CAS
Read A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK, CK
CMD
DQS
tDQSCK
AL =1
CL = 7
RL = 8
DQs
DOUTA0 DOUTA1 DOUTA2 DOUTA3 DOUTA4 DOUTA5 DOUTA6 DOUTA7
internal Read
Command Start
(Bank A)
Burst Read Operation: RL = 7 (AL = 0 and CL = 7)
0
1
2
Posted CAS
READ A
NOP
Post CAS
Read A
7
8
9
10
11
12
13
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK, CK
CMD
NOP
DQS
tDQSCK
CL = 7
RL = 7
DQs
DOUTA0 DOUTA1 DOUTA2 DOUTA3 DOUTA4 DOUTA5 DOUTA6 DOUTA7
internal Read
Command Start
(Bank A)
- 16 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Read followed by Burst Write : AL = 1, CL = 7, RL = 8, WL = (AL+1) = 2
0
1
6
7
8
9
10
Post CAS
READ A
NOP
NOP
NOP
NOP
NOP
11
12
13
NOP
NOP
NOP
CK, CK
CMD
Post CAS
Write A
DQS
RL =8
tHZ
DQ’s
DOUTA0
DOUTA1
DOUTA2
DINA0
DOUTA3
DINA1
DINA2
DINA3
WL = 2
tHZ > 1 tCK
Seamless Burst Read Operation: CL = 7, AL = 1, RL = 8
0
1
2
NOP
Post CAS
READ A4
7
8
9
10
11
NOP
NOP
NOP
NOP
NOP
CK, CK
CMD
Post CAS
READ A0
NOP
DQS
AL = 1
CL =7
RL = 8
DQ’s
DOUTA0
DOUTA1
DOUTA2
DOUTA3
DOUTA4
DOUTA5
DOUTA6
The seamless burst read operation is supported by enabling a read command at every other clock. This operation is
allowed regardless of same or different banks as long as the banks are activated.
- 17 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Write Operation
The Burst Write command is initiated by having CS, CAS and WE low while holding RAS high at the rising edge of the
clock. The address inputs determine the starting column address. Write latency (WL) is defined by an Additive
Latency(AL) plus one and is equal to (AL + 1). The first data bit of the burst cycle must be applied to the DQ pins at the
first rising edge of the clock and at the first falling edge of the clock. The tDQSS specification must be satisfied for write
cycles. The subsequent burst bit data are issued on successive edges of the clock until the burst length of 4 is completed. When the burst has finished, any additional data supplied to the DQ pins will be ignored. The DQ Signal is
ignored after the burst write operation is complete. The time from the completion of the burst write to bank precharge is
the write recovery time (tWR).
Burst Write Operation : AL= 1, CL = 7, WL = 2, tWR = 5
0
1
2
3
4
NOP
NOP
NOP
5
6
9
CK, CK
Posted CAS
WRITE A
CMD
NOP
NOP
NOP
Precharge
DQS
WL =2
DQ
DINA0 DINA1 DINA2
DINA3
tWR = 5
Burst Write followed by Burst Read : RL = 7 (AL=0, CL=7), WL = 1, tCDLR = 4
1
0
2
3
7
14
15
16
NOP
NOP
NOP
CK, CK
Write to Read Latency = WL + 2 + t CDLR =7
CMD
Post CAS
WRITE A
NOP
NOP
NOP
NOP
Post CAS
READ A
NOP
NOP
DQS
CL = 7
tWL = 1
> = tCDLR
DQ
DINA0 DINA1 DINA2 DINA3
DOUTA0 DOUTA1 DOUTA2 DOUTA3
The minimum number of clock from the burst write command to the burst read command is WL+2+a write-toread-turn-around-time(tCDLR).
- 18 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Seamless Burst Write Operation : AL = 1, CL = 7, WL = AL + 1 = 2
0
1
2
3
7
8
9
10
11
Post CAS
WRITE A
NOP
Post CAS
WRITE B
NOP
NOP
NOP
NOP
NOP
NOP
DINA0
DINA2
CK, CK
CMD
DQS
WL = 2
DQ’s
DINA1
DINA3
DINB0
DINB1
DINB2
DINB3
The seamless burst write operation is supported by enabling a write command every other clock.
This operation is allowed regardless of same or different banks as long as the banks are activated
- 19 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is
triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can
be used to precharge each bank independently or all banks simultaneously. Three address bits A8, BA0 and BA1 are
used to define which bank to precharge when the command is issued.
Bank Selection for Precharge by Address Bits
A8
BA1
BA0
Precharged Bank(s)
LOW
LOW
LOW
Bank 0 only
LOW
LOW
HIGH
Bank 1 only
LOW
HIGH
LOW
Bank 2 only
LOW
HIGH
HIGH
Bank 3 only
HIGH
DON’T CARE
DON’T CARE
All Banks 0 ~ 3
Burst Read Operation Followed by Precharge
For the earliest possible precharge, the precharge command may be issued on the rising edge which is CAS latency
(CL) clock cycles before the end of the read burst. A new bank active (command) may be issued to the same bank after
the RAS precharge time (tRP). A precharge command cannot be issued until tRAS is satisfied.
Burst Read Operation Followed by Precharge: RL = 7 (AL=0, CL=7), tRP= 8
0
2
3
4
5
6
7
Post CAS
READ A
Precharge
NOP
NOP
NOP
NOP
NOP
8
9
10
11
CK, CK
CMD
NOP
NOP
Bank A
Active
NOP
DQS
> = tRP
CL =7
DQ
DOUTA0 DOUTA1 DOUTA2
- 20 -
DOUTA3
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Read Operation Followed by Precharge: RL = 8 (AL=1, CL=7, tRP =8)
0
3
Posted CAS
READ A
Precharge A
7
8
9
10
11
12
13
CK, CK
CMD
NOP
NOP
NOP
Bank A
Activate
NOP
NOP
NOP
DQS
> = tRP
RL = 8
DQ’s
DOUTA0 DOUTA1 DOUTA2 DOUTA3
Burst Write followed by Precharge
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the Precharge Command
can be issued. This delay is known as a write recovery time (tWR) referenced from the completion of the burst write to the
precharge command. No Precharge command should be issued prior to the tWR delay, as GDDR2 SDRAM does not support any burst interrupt operation.
Burst Write followed by Precharge: AL = 1, CL = 7, WL = AL + 1 = 2, tWR = 5
0
1
2
3
4
5
6
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
9
CK, CK
CMD
NOP
NOP
Precharge A
DQS
WL = 2
DQ’s
tWR = 5
DINA0
DINA1
DINA2
DINA3
- 21 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
DM FUNCTION
The DDR SDRAM has a Data mask function that can be used in conjunction with data Write cycle only, not Read cycle.
When the Data Mask is activated (DM high) during write operation the write data is masked immediately (DM to Data-mask
Latency is zero).
DM must be issued at the rising edge or the falling edge of Data Strobe instead of a clock edge.
0
1
2
3
4
5
6
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
9
CK, CK
CMD
NOP
NOP
Precharge A
DQS
tWR = 5
WL = 2
DQ’s
DINA0
DINA1
DINA2
DINA3
DM
masked by DM=H
Auto-Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the Precharge
Command or the auto-precharge function. When a Read or a Write Command is given to the GDDR2 SDRAM, the CAS
timing accepts one extra address, column address A8, to allow the active bank to automatically begin precharge at the
earliest possible moment during the burst read or write cycle. If A8 is low when the READ or WRITE Command is
issued, then normal Read or Write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A8 is high when the Read or Write Command is issued, then the auto-precharge function is engaged.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon CAS latency) thus improving system performance for random data access. The RAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge command may be issued with any read or write command.
Auto-precharge also be implemented during Write commands. The precharge operation engaged by the Auto precharge
command will not begin until the last data of the burst write sequence is properly stored in the memory array.
- 22 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Read with Auto Precharge
If A8 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The GDDR2
SDRAM starts an Auto Precharge operation on the rising edge which is (AL + BL/2)cycles later from the read with Auto
Precharge command, when tRAS(min) is satisfied. If tRAS(min) is not satisfied at the edge, the start point of Auto Precharge operation will be delayed until tRAS(min) is satisfied. A new bank active command may be issued to the same
bank if the following two conditions are satisfied simultaneously.
(1) The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
When the Read with Auto-Precharge command is issued, new command (Read, Read with Auto Precharge or precharge) of same bank can be asserted tCCD=2 clock cycles later.
Burst Read with Auto Precharge Followed by Same Bank Activation :
RL = 8 (AL = 1, CL = 7, internal tRP = 8)
0
3
7
8
9
10
11
12
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
CK, CK
CMD
A8 = 1
Post CAS
READ A
NOP
NOP
NOP
Auto Precharge Begins
DQS
> = tRP
RL = 8
DQ’s
DOUTA0 DOUTA1 DOUTA2 DOUTA3
Burst Read with Auto Precharge (AL=0)
For same bank
For different bank
Asserted
command
1
2
3
4
1
2
3
4
READ
Illegal
Legal
Illegal
Illegal
Illegal
Legal
Legal
Legal
READ with Auto Precharge
Illegal
Legal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Active
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Precharge
Illegal
Legal
Illegal
Illegal
Legal
Legal
Legal
Legal
*When AL(Additive Latency) is 1, a precharge command for same bank can be issued at 3th cycle only and others are same with
AL=0.
- 23 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Write with Auto-Precharge
If A8 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The GDDR2 SDRAM
automatically begins precharge operation after the completion of the burst write plus write recovery time (tWR).
Interruption of the Write with Auto-Precharge function is prohibited. Active command of same bank can be issued
WL+tWR+tRP+BL/2 cycles later from the Write with Auto-Precharge command. The bank undergoing Auto-Precharge
from the completion of the write burst may be reactivated if the following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto-Precharge : AL = 0, WL = 1, tWR = 5, tRP=8(for the same bank)
1
0
2
3
4
NOP
NOP
7
8
9
16
CK, CK
A8 = 1
CMD
Post CAS
WRITE A
NOP
NOP
NOP
NOP
Bank A
Active
NOP
Auto Precharge Begins
DQS
> = tWR
WL=1
DQs
DINA0
DINA1
DINA2
> = tRP
DINA3
Burst Write with Auto-Precharge (AL=0)
For same bank
For different bank
Asserted
command
1~7
8
9 ~ 15
16
1
2~6
7
WRITE
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
WRITE with Auto Precharge
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
READ
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
READ with Auto Precharge
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Active
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Precharge
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
All Bank Precharge
Illegal
Legal
Legal
Legal
-
*When AL(Additive Latency) is 1, a active command for same bank can be issued from 17th cycle , a READ or READ with Auto Precharge command for different bank can be issued from 8th cycle and others are same with AL=0.
* All Bank Precharge command can be issued from 8th cycle.
- 24 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Automatic Refresh Command (CAS Before RAS Refresh)
When CS, RAS and CAS are held low and WE high at the rising edge of the clock, the chip enters the Automatic Refresh
mode (CBR). All banks of the GDDR2 SDRAM must be precharged and idle for a minimum of the Precharge time (tRP)
before the Auto Refresh Command (CBR) can be applied. An address counter, internal to the device, supplies the bank
address during the refresh cycle. No control of the external address bus is required once this cycle has started.
When the refresh cycle has completed, all banks of the GDDR2 SDRAM will be in the precharged (idle) state. A delay
between the Auto Refresh Command (CBR) and the next Activate Command or subsequent Auto Refresh Command
must be greater than or equal to the Auto Refresh cycle time (tRFC).
CK, CK
High
CKE
CMD
> = tRFC
> = tRP
Precharge
NOP
Bank
Activate
CBR
NOP
NOP
Self Refresh Command
The GDDR2 SDRAM device has a built-in timer to accommodate Self Refresh operation. The Self Refresh Command is defined by
having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock. Once the Self Refresh Command is registered,
CKE must be held low to keep the device in Self Refresh mode and NOP command should be issued or CS should be held high to
ensure stable self refresh operation for next four cycles after the Self Refresh Command. When the GDDR2 SDRAM has entered Self
Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self Refresh
Operation to save power. The user may halt the external clock while the device is in Self Refresh mode, however, the clock must be
restarted before the device can exit Self Refresh operation. After CKE is brought high, an internal timer is started to insure CKE is
held high for approximately 10ns before registering the Self Refresh exit command. The purpose of this circuit is to filter out noise
glitches on the CKE input which may cause the GDDR2 SDRAM to erroneously exit Self Refresh operation. Once the Self Refresh
exit command is registered, a delay equal or longer than the tXSA (>20000 tck) must be satisfied before any command can be issued
to the device. CKE must remain high for the entire Self Refresh exit period (tXSA > 20000tCK) and commands must be gated off with
CS held high. Alternatively, NOP commands may be registered on each positive clock edge during the Self Refresh exit interval. (See
Figure.)
CK, CK
tXSA (> 20000tCK)
CKE
> = 4clk
CMD
Self Refresh
NOP
NOP
ANY
Command
*After self refresh entry, NOP or chip deselect command should be issued during more than 4 cycles
and chip deselet command should be issued for tXSA after self refresh exit.
- 25 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Power-Down
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs when all
banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in
any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers,
excluding CK, CK and CKE. During 4 cycles after power down mode issued, NOP should be issued or CS must be held
high. In Power Down mode, CKE Low and a stable clock signal must be maintained at the inputs of the GDDR2
SDRAM, and all other input signals are “Don’t Care” except first 4 cycles after power down mode issued. Power-down
duration is limited by the refresh requirements of the device.
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or CS hold high). A
valid, executable command may be applied four clock cycles later.
Power Down
CK, CK
tIS
CKE
CMD
tIS
4tck
VALID
NOP*1
NOP
No column
access in
progress
NOP
NOP
NOP
NOP
VALID
Exit
power down
mode
Enter Power Down mode
( Read or Write operation
must not be in progress)
Don’t Care
*1. NOP or CS held high should be issued more than 4 cycles.
*CL + 2tCK after read or CL after last data in, a power-down command can be issued.
Burst Interruption
Interruption of a burst read or write cycle is prohibited.
No Operation Command
The No Operation Command should be used in cases when the GDDR2 SDRAM is in an idle or a wait state. The purpose of the No Operation Command is to prevent the GDDR2 SDRAM from registering any unwanted commands
between operations. A No Operation Command is registered when CS is low with RAS, CAS, and WE held high at the
rising edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as
a burst read or write cycle. The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high at the rising edge of the clock, the RAS, CAS, and WE signals become don’t
cares.
- 26 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
On-Die Termination
All pins except ZQ, CKE Pins adopt on-die termination to improve signal integrity of channel. The On-Die Termination
should be controlled by EMRS command at low frequency clock (<100Mhz). The On-Die Termination control command
should be issued before issuing DLLON command by EMRS or simultaneously to guarantee stable channel condition of
/CK and CK pins. If A3, A2 = 0, 0, the On-Die Termination of all pins will be deactivated. If A3, A2 = 0, 1, the On-Die
Termination will be self-calibrated by detecting the external Resistor on ZQ pin. If A3, A2 = 1, 0, the value of the On-Die
Termination of CK, /CK, 32 DQ’s, 4 DM’s, 4 /DQS’s and 4DQS pins will be the fixed value, 60ohm. If A3, A2 = 1, 1, the
value of the On-Die Termination of CK, /CK, 32 DQ’s, 4 DM’s, 4 /DQS’s and 4DQS pins will be the fixed value,120ohm.
If A3, A2 = 0, 1 is issued by EMRS, the value of the on-die termination of each pin is determined by monitoring the
value of a external resistor which is connected between ZQ pin and VSSQ, and updated every CBR refresh cycle to
compensate variation of voltage and temperature.
The value of On-Die Termination of CMD and ADD (/RAS, /CAS, /WE, /CS, BA0, BA1 and A0 ~ A11) pins of each
DRAM depend on EMRS code (A1, A0). If A1, A0 = 0, 0 , the On-die Termination of CMD and ADD pins will be deactivated. If A1, A0 = 0, 1, the value of the On-die Termination of CMD and ADD pins will be same value as the value of
DQ pins. If A1, A0 = 1, 0, the value of the On-Die Termination of CMD and ADD pins will be two times of the value of
DQ pins. If A1, A0 = 1, 1, the value of the On-Die Termination of CMD and ADD pins will be four times of the value of
DQ pins.
The On-Die Termination for one bank system with self-calibration code (A3, A2 = 0, 1)
The value of external resistor (Rref) at external one bank system is 2 times of target termination value of DQ’s on channel (Rterm). Then the value of On-Die Termination of CK, /CK, 32 DQ’s, 4 DM’s, 4 /DQS’s and 4DQS pins is half value
of the external resistor. The value of On-Die Termination of CMD and ADD ( /RAS, /CAS, /WE, /CS, BA0, BA1 and A0
~ A11) pins of each DRAM depend on EMRS code (A2, A0).
The following figure shows the typical external one bank system having on-die termination.
Block Diagram of 1 Bank System
Front Side DRAMs
CK,/CK
ADD
/RAS,/CAS,/WE,/CS
DM’s, DQ’S,
DQS’s,/DQS’s
CK,/CK
CK,/CK
ZQ
ADD
Rref=2 X Rterm
/RAS,/CAS,/WE,/CS
DM’s, DQ’S,
DQS’s,/DQS’s
CK,/CK
VSSQ
ZQ
ADD
2XRterm
Controller
/RAS,/CAS,/WE,/CS
DM’s, DQ’S,
DQS’s,/DQS’s
CK,/CK
/CS
/RAS,/CAS,/WE
DM’s, DQ’S,
DQS’s,/DQS’s
CK,/CK
VSSQ
DM’s, DQ’S,
DQS’s,/DQS’s
CK,/CK
ZQ
ADD
2XRterm
/RAS,/CAS,/WE,/CS
DM’s, DQ’S,
DQS’s,/DQS’s
CK,/CK
VSSQ
ZQ
ADD
2XRterm
/RAS,/CAS,/WE,/CS
DM’s, DQ’S,
DQS’s,/DQS’s
DM’s, DQ’S,
DQS’s,/DQS’s
- 27 -
VSSQ
Where Rterm is the termination value on charnnel
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
The On-die Termination on/off status on DRAM is in accompany with DRAM operation mode.
Power consumption by On-die termination can be reduced by issuing power down mode.
On-Die Termination (ODT) Status
of 1 Bank System
Mode
Pin
ODT of DRAM
Self_refresh
All
OFF
CK, /CK
ON
Other pins
OFF
All
ON
Power Down
Active
All banks idle
A10=1
READ
A10=0
CK, /CK, ADD’s, CMD
ON
DQ’s, DQS’s, /DQS’s, DM’s
ON
CK, /CK, ADD’s, CMD, DM,s
ON
DQ’s, DQS’s, /DQS’s
OFF
CK, /CK, ADD’s, CMD, DM,s
ON
DQ’s, DQS’s, /DQS’s
ON
* A10 in EMRS code is used for On-Die Termination of DQ’s off when Read data comes out
- 28 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
The On-die Termination for external two bank system with self-calibration code (A3, A2 = 0, 1)
The external resistor (Rref) is equal to 2X the number of shared DRAM’s on one channel X target termination value of DQ
channel. The following figure is represented the typical two bank system having on-die termination. 4 DRAM’s share one
channel for CMD and ADD pins and 2 DRAM’s share one channel for DQ’s and CLK pins. The external resistor (Rref) is 4
times of target termination value on channel. The On-die Termination value of CK, /CK, 32 DQ’s, 4 DM’s, 4 /DQS’s and
4DQS pins on channel is half value of the external resistor (Rref).
Block Diagram of 2 Banks System
Front Side DRAM’s
CK, /CK
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
ADD
/RAS, /CAS, /WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
ZQ
4 X Rterm
CK, /CK
CK, /CK
Controller
Back Side DRAM’s
CK, /CK
CK, /CK
CK, /CK
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
DM’s, DQ’s,
DQS’s, /DQS’s
ZQ
4 X Rterm
CK, /CK
CK, /CK
/CS
DM’s, DQ’s,
DQS’s, /DQS’s
ZQ
4 X Rterm
CK, /CK
CK, /CK
DM’s, DQ’s,
DQS’s, /DQS’s
ZQ
4 X Rterm
ZQ
4 X Rterm
VSSQ
ZQ
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
CK, /CK
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
Rref = 4 X Rterm
VSSQ
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
CK, /CK
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
/RAS, /CAS, /WE, /CS
ZQ
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
4 X Rterm
VSSQ
ZQ
ADD
/RAS, /CAS,
/WE, /CS
DM’s, DQ’s,
DQS’s, /DQS’s
4 X Rterm
VSSQ
Self-refresh and power down mode in two bank system should be issued for all DRAM’s at the same time to keep suitable On-die termination condition on channel.
.
Mode
DRAM
Pin
M1
Self_refresh
Self_refresh
All
Self_refresh
Other States
All
Power down
Power down
Power down
Remarks
M2
M1
M2
OFF
OFF
*1
Illegal
CK,/CK
ON
ON
Other pins
OFF
OFF
Other States
*1
Illegal
CK, /CK, ADD’s, CMD
ON
ON
DQ’s, DQS’s, /DQS’s, DM’s
ON
ON
CK, /CK, ADD’s, CMD
ON
ON
DQ’s, DQS’s, /DQS’s, DM’s
ON
OFF
CK, /CK, ADD’s, CMD
ON
ON
DQ’s, DQS’s, /DQS’s, DM’s
ON
ON
CK, /CK, ADD’s, CMD
ON
ON
DQ’s, DQS’s, /DQS’s, DM’s
ON
OFF
Active
All Banks idle
A10=1
Read
A10=0
A10=1
Active
Read
CK, /CK, ADD’s, CMD
ON
ON
DQ’s, DQS’s, /DQS’s, DM’s
ON
ON
A10=0
1. With these case, the system couldn’t have suitable Rterm.
Because the On-Die termination value on channel is two times than the target value.
- 29 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
4. Command Truth Table.
CKE
Function
CS
RAS
CAS
WE
DM
X
L
L
L
L
X
BA0 = 0 and MRS OP Code
1
H
X
L
L
L
L
X
BA0 = 1 and EMRS OP Code
1
Auto (CBR) Refresh
H
H
L
L
L
H
X
X
X
X
X
1
Entry Self Refresh
H
L
L
L
L
H
X
X
X
X
X
1
L
H
H
X
X
X
X
X
X
X
X
1
L
H
L
H
H
H
X
X
X
X
X
Single Bank Precharge
H
X
L
L
H
L
X
BA
X
L
X
1,2
Precharge all Banks
H
X
L
L
H
L
X
X
X
H
X
1
Bank Activate
H
X
L
L
H
H
X
BA
Write
H
X
L
H
L
L
X
BA
Write with Auto Precharge
H
X
L
H
L
L
X
Read
H
X
L
H
L
H
Read with Auto-Precharge
H
X
L
H
L
DM
H
X
X
X
H
X
L
H
X
H
Previous
Cycle
Current
Cycle
Mode Register Set
H
Extended Mode Register Set
BA0/BA1
A11 - A9
A8
A7 - A0
Notes
Exit Self Refresh
Row Address
1,2
X
L
Column
1,2,3,
BA
X
H
Column
1,2,3,
X
BA
X
L
Column
1,2,3
H
X
BA
X
H
Column
1,2,3
X
X
DM
X
X
X
X
6
H
H
H
X
X
X
X
X
1
H
X
X
X
X
X
X
X
X
1
L
H
X
X
X
X
X
X
X
X
1,4,5
H
L
L
H
H
H
X
X
X
X
X
L
H
H
X
X
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
X
X
No Operation
Power Down Mode Entry
1,4,5
Power Down Mode Exit
All of the GDDR2 SDRAM operations are defined by states of CS, WE, RAS, and CAS at the positive rising edge of the clock.
Bank Select (BA0,1), determine which bank is to be operated upon.
Burst read or write cycle may not be terminated.
The Power Down Mode does not perform any refresh operations, therefore the device can’t remain in this mode longer than the Refresh period
(tREF) of the device. Four clock delay is required for mode entry and exit.
5. If CS is low, then when CKE returns high, no command is registered into the chip for one clock cycle.
6. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
1.
2.
3.
4.
(V=Valid, X=Don’t Care, H=Logic High, L=Logic Low)
- 30 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
5. Clock Enable (CKE) Truth Table
CKE
Current State
Self Refresh
Power Down
All Banks Idle
Any State other
than listed
above
Command
Action
Notes
Previous
Cycle
Current
Cycle
CS
RAS
CAS
WE
BA1, BA0,
A11 - A0
H
X
X
X
X
X
X
L
H
H
X
X
X
X
Exit Self Refresh with Device Deselect
2
L
H
L
H
H
H
X
Exit Self Refresh with No Operation
2
L
H
L
ILLEGAL
2
L
L
X
X
X
X
X
Maintain Self Refresh
H
X
X
X
X
X
X
INVALID
1
L
H
H
X
X
X
X
Power Down mode exit, all banks idle
2
L
H
L
H
H
H
X
Exit Power Down mode with No Operation
2
L
H
L
ILLEGAL
2
L
L
X
X
X
X
H
H
H
X
X
X
H
H
L
H
L
H
H
L
L
H
L
L
L
L
H
H
X
X
H
L
X
L
H
L
L
Command
Address
Command
Address
Command
X
X
X
Address
X
Command except selfrefresh command
INVALID
1
Maintain Power Down Mode
Device Deselect
3
Refer to the Current State Truth Table
3
Power Down
X
ILLEGAL
H
X
Entry Self Refresh
X
X
X
Refer to operations in the Current State
Truth Table
X
X
X
X
Power Down
X
X
X
X
X
Power Down
X
X
X
X
X
Power Down
4
5
1. For the given Current State CKE must be low in the previous cycle.
2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. The minimum setup time for CKE (tCES) must be
satisfied before any command other than self refresh exit.
3. The inputs (BA1, BA0, A11 - A0) depend on the command that is issued. See the Current State Truth Table for more information.
4. The Auto Refresh, Self Refresh Mode, and the Mode Register Set modes can only be entered from the all banks idle state.
5. Must be a legal command as defined in the Current State Truth Table.
- 31 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDD
-1.0 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDDQ
-0.5 ~ 3.6
V
Storage temperature
Voltage on any pin relative to Vss
TSTG
-55 ~ +150
°C
Power dissipation
PD
4.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
POWER & DC OPERATING CONDITIONS(SSTL_18 In/Out)
Recommended operating conditions (Voltage referenced to VSS=0V, Tj=0 to 100°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Device Supply voltage
VDD
2.4
2.5
2.6
V
1
Output Supply voltage
VDDQ
1.7
1.8
1.9
V
1
Reference voltage
VREF
0.49*VDDQ
-
0.51*VDDQ
V
2
DC Input logic high voltage
VIH (DC)
VREF+0.125
-
VDDQ+0.30
V
4
DC Input logic low voltage
VIL (DC)
-0.30
-
VREF-0.125
V
5
AC Input logic high voltage
VIH(AC)
VREF+0.25
-
-
V
AC Input logic low voltage
VIL(AC)
-
-
VREF-0.25
V
Output logic high voltage
VOH
Vtt+0.4
-
-
V
6
Output logic low voltage
VOL
-
-
Vtt-0.4
V
6
Input leakage current
IIL
-5
-
5
uA
7
Output leakage current
IOL
-5
-
5
uA
7
Note : 1. Under all conditions VDDQ must be less than or equal to VDD.
2. VREF is expected to equal 0.50*VDDQ of the transmitting device and to track variations in the DC level of the same. Peak to
peak noise on the VREF may not exceed + 2% of the DC value. Thus, from 0.50*VDDQ, VREF is allowed + 25mV for DC error
and an additional + 25mV for AC noise.
3. Vtt of the transmitting device must track VREF of the receiving device.
4. VIH(max.)= VDDQ +1.5V for a pulse and it which can not be greater than 1/3 of the cycle rate.
5. VIL(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
6. Output logic high voltage and low voltage is depend on channel condition.(Ract , Ron)
7. For any pin under test input of 0V < VIN < VDD is acceptable. For all other pins that are not under test VIN=0V
- 32 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, Tj=0 to 100°C)
Version
Parameter
Symbol
Test Condition
Unit Note
-20
-22
-25
Operating Current
(One Bank Active)
ICC1
Burst Lenth=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
590
540
500
mA
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
110
100
95
mA
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
230
210
190
mA
Active Standby Current
power-down mode
ICC3P
CKE ≤ VIL(max), tCC= tCC(min)
110
100
95
mA
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
510
470
430
mA
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
1200
1100
990
mA
Refresh Current
ICC5
tRC≥ tRFC
370
350
330
mA
Self Refresh Current
ICC6
CKE ≤ 0.2V
Operating Current
(4Bank interleaving)
ICC7
Burst Lenth=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
7
1400
1
2
mA
1300
1180
mA
Note : 1. Measured with outputs open & On-Die termination off.
2. Refresh period is 16ms.
AC INPUT OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS=0V, VDD=2.5V ± 0.1V, VDDQ=1.8V ± 0.1V, Tj=0 to 100 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage; DQ
VIH
VREF+0.25
-
-
V
1
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.25
V
2
Clock Input Differential Voltage ; CK and CK
VID
0.5
-
VDDQ+0.6
V
3
Clock Input Crossing Point Voltage ; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
4
Note : 1. VIH(Max) = 4.2V. The overshoot voltage duration is < 3ns at VDD.
VIH level should be met at the pin of DRAM when ODT=ON.
2. VIL(Min) = -1.5V. The undershoot voltage duration is < 3ns at VSS.
VIL level should be met at the pin of DRAM when ODT=ON.
3. VID is the magnitude of the difference between the input level on CK and the input level on CK
4. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
VDDQ
DRAM
ODT of DRAM
Controller
Input level should be measured
at this point
- 33 -
VSSQ
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
AC OPERATING TEST CONDITIONS (VDD=2.5V±0.1V, Tj= 0 to 100 °C)
Parameter
Value
Unit
Input reference voltage for CK(for single)
0.50*VDDQ
V
CK and CK signal maximum peak swing
1.5
V
CK signal minimum slew rate
1.0
V/ns
VREF+0.25/VREF-0.25
V
VREF
V
Output timing measurement reference level
1/2 VDDQ
V
Output load condition
See Fig.1
Input Levels(VIH/VIL)
Input timing measurement reference level
Output
Z0=60Ω
Note
VREF
=0.5*VDDQ
CLOAD=10pF
(Fig. 1) Output Load Circuit
CAPACITANCE (VDD=2.5V, TA= 25°C, f=1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance ( CK, CK )
CIN1
3.0
5
pF
Input capacitance (A0~A10, BA0~BA1)
CIN2
3.0
5
pF
Input capacitance
( CKE, CS, RAS,CAS, WE )
CIN3
3.0
5
pF
Data & DQS input/output capacitance(DQ0~DQ31)
COUT
3.0
5
pF
Input capacitance(DM0 ~ DM3)
CIN4
3.0
5
pF
- 34 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
AC CHARACTERISTICS
Parameter
CL=7
CL=6
CL=5
CK cycle time
-20 (GF1000)
Min
Max
2.0
4.0
0.45
0.55
0.45
0.55
-0.35
0.35
-0.225
0.225
0.85
1.15
0.35
0.65
0.45
0.55
0.45
0.55
0.5
0.5
-
Symbol
tCK
CK high width
CK low width
DQS out access time from CK
Data strobe edge to Dout edge
Read preamble
Read postamble
DQS in/out high level
DQS in/out low level
Address and Control input setup
Address and Control input hold
Write command to first DQS
latching transition
Write preamble setup time
Write postamble
Write preamble
DQ_in and DM setup time to DQS
DQ_in and DM hold time to DQS
Clock half period
Data output hold time from DQS
Jitter over 1-6 clock cycles of CK
Cycle to Cycle duty cycle error
Rise and fall times of CK
tCH
tCL
tDQSCK
tDQSQ
tRPRE
tRPST
tDQSH
tDQSL
tIS
tIH
-22 (GF900)
Min
Max
2.22
4.0
0.45
0.55
0.45
0.55
-0.45
0.45
-0.25
0.25
0.88
1.12
0.38
0.62
0.45
0.55
0.45
0.55
0.55
0.55
-
tDQSS
WL - 0.15
WL + 0.15
tWPRES
tWPST
tWPRE
tDS
tDH
tHP
tQH
tJ *1
tDC,ERR
tR, tF
0
0.4
0.35
0.25
0.25
tCL/H min
tHP-0.225
-
0.6
50
50
400
-25 (GF800)
Min
Max
2.5
4.0
0.45
0.55
0.45
0.55
-0.45
0.45
-0.28
0.28
0.9
1.1
0.4
0.6
0.45
0.55
0.45
0.55
0.6
0.6
-
Unit
ns
ns
ns
tCK
tCK
ns
ns
tCK
tCK
tCK
tCK
ns
ns
WL - 0.15 WL + 0.15 WL - 0.15 WL + 0.15
tCK
0
0.4
0.35
0.27
0.27
tCL/H min
tHP-0.25
-
ps
tCK
tCK
ns
ns
ns
ns
ps
ps
ps
0.6
55
55
450
0
0.4
0.35
0.3
0.3
tCL/H min
tHP-0.28
-
0.6
65
65
500
1. The cycle to cycle jitter and 2~6 cycle short term jitter.
Simplified Timing @ BL=4, CL=7, AL=0
0
1
2
6
7
8
9
10
11
12
CK, CK
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
Post CAS
NOP
Write A
NOP
DQS
RL = 7
DQ’s
DOUT A0 DOUT A1 DOUT A2 DOUT A3
DIN A0
DIN A1
DIN A2
DIN A3
WL = 1
WDQS
- 35 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Note 1 :
- The JEDEC DDR-II specification currently defines the output data valid window(tDV) as the time period when the data
strobe and all data associated with that data strobe are coincidentally valid.
- The previously used definition of tDV(=0.35tCK) artificially penalizes system timing budgets by assuming the worst case
output valid window even then the clock duty cycle applied to the device is better than 45/55%
- A new AC timing term, tQH which stands for data output hold time from DQS is defined to account for clock duty cycle
variation and replaces tDV
- tQHmin = tHP-X where
. tHP=Minimum half clock period for any given cycle and is defined by clock high or clock low time(tCH,tCL)
. X=A frequency dependent timing allowance account for tDQSQmax
tQH Timing (CL7, BL4)
tHP
0
1
6
7
8
9
CK, CK
CS
DQS
tDQSQ(max)
tQH
tDQSQ(max)
Da0
DQ
COMMAND
Da1
Da2
Da3
READA
- 36 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
AC CHARACTERISTICS (I)
Parameter
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery +
Precharge
Exit self refresh to any command
Power down exit time
Refresh interval time
Symbol
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tWR
tCDLR
tCCD
tMRD
tDAL
tXSA
tPDEX
tREF
-20 (GF1000)
Min
Max
22
27
15
100K
8
5
7
5
5
4
2
4
-
-22 (GF900)
Min
Max
21
25
14
100K
8
5
7
5
5
4
2
4
-
-25 (GF800)
Min
Max
18
22
12
100K
7
4
6
4
4
4
2
4
-
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
12
-
12
-
10
-
tCK
20000
4tCK+tIS
7.8
-
20000
4tCK+tIS
7.8
-
20000
4tCK+tIS
7.8
-
tCK
ns
us
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
- 37 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
PACKAGE DIMENSIONS (FBGA)
A1 INDEX MARK
13.0
13.0
<Top View>
0.8x11=8.8
A1 INDEX MARK
0.10 Max
0.8
B
C
D
E
F
G
H
J
K
L
M
N
0.40
0.8x11=8.8
0.45 ± 0.05
0.8
13 12 11 10 9 8 7 6 5 4 3 2
0.25 ± 0.05
0.40
1.40 Max
<Bottom View>
Unit : mm
- 38 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
IBIS: I/V Characteristics for Input and Output Buffers
The termination resistor of the controller must be set to a appropriate value to satisfy output voltage level if the ODT of DRAM is on.
30 ohm Driver @ ODT OFF
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 30 ohm@ODT OFF variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines the of the V-I curve of Figure a.
35
Maximum
30
Iout(mA)
25
Typical
20
15
Minimum
10
5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 30 ohm@ODT OFF variation pullup current from minimum to maximum process, temperature and voltage will lie within the
outer bounding lines of the V-I curve of Figrue b.
0
-5
Iout(mA)
-10
-15
Minumum
-20
Typical
-25
-30
Maximum
-35
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 30 ohm@ODT OFF variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 30 ohm@ODT OFF variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to
source voltages from 0 to VDDQ/2
- 39 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
4.4
3.0
6.3
-3.6
-2.5
-4.9
Minimum
Maximum
0.2
8.1
5.5
11.8
-6.9
-4.6
-9.3
0.3
11.2
7.6
16.4
-9.7
-6.6
-13.3
0.4
13.8
9.3
20.4
-12.2
-8.2
-17.0
0.5
15.9
10.6
23.5
-14.3
-9.6
-20.1
0.6
17.4
11.5
25.9
-16.1
-10.7
-22.7
0.7
18.4
12.1
27.5
-17.4
-11.6
-24.6
0.8
19.0
12.4
28.4
-18.4
-12.3
-26.0
0.9
19.4
12.6
29.0
-19.1
-12.8
-27.1
1.0
19.7
12.8
29.3
-19.7
-13.2
-28.0
1.1
19.8
12.9
29.5
-20.3
-13.6
-28.7
1.2
20.0
13.0
29.7
-20.7
-13.9
-29.3
1.3
20.1
13.1
29.9
-21.1
-14.2
-29.8
1.4
20.2
13.1
30.0
-21.5
-14.5
-30.3
1.5
20.2
13.2
30.1
-21.8
-14.7
-30.7
1.6
20.3
13.2
30.2
-22.1
-14.9
-31.1
1.7
20.4
13.3
30.3
-22.4
-15.1
-31.4
1.8
20.4
13.3
30.3
-22.6
-15.3
-31.8
1.9
20.5
13.5
30.4
-22.9
-15.5
-32.1
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 40 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
30 ohm Driver @ ODT 60 ohm Fix.
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 30 ohm@ODT 60 ohm Fix variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of Figure a.
60
Maximum
50
Iout(mA)
40
Typical
30
Minimum
20
10
0
-10
-20
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 30 ohm@ODT 60 ohm Fix variation pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
20
10
Iout(mA)
0
-10
-20
-30
Minumum
-40
Typical
-50
Maximum
-60
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 30 ohm@ODT 60 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 30 ohm@ODT 60 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain
to source voltages from 0 to VDDQ/2
- 41 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
Minimum
Maximum
0.0
-14.4
-11.5
-17.1
14.9
11.9
18.0
0.1
-8.5
-7.1
-9.0
9.7
8.1
11.4
0.2
-3.2
-3.3
-1.8
4.8
4.6
5.1
0.3
1.6
0.2
4.7
0.4
1.3
-0.8
0.4
5.8
3.3
10.4
-3.7
-1.7
-6.2
0.5
9.5
5.9
15.4
-7.4
-4.4
-11.2
0.6
12.7
8.2
19.7
-10.8
-6.9
-15.6
0.7
15.3
10.2
23.1
-13.7
-9.2
-19.4
0.8
17.5
11.9
25.9
-16.4
-11.2
-22.6
0.9
19.6
13.5
28.3
-18.8
-13.2
-25.6
1.0
21.5
15.1
30.5
-21.0
-15.0
-28.3
1.1
23.3
16.6
32.6
-23.2
-16.8
-30.9
1.2
25.1
18.1
34.7
-25.3
-18.5
-33.4
1.3
26.8
19.6
36.7
-27.3
-20.2
-35.8
1.4
28.6
21.0
38.7
-29.4
-21.8
-38.1
1.5
30.3
22.4
40.7
-31.3
-23.5
-40.4
1.6
32.0
23.9
42.7
-33.3
-25.1
-42.7
1.7
33.7
25.3
44.6
-35.2
-26.6
-44.9
1.8
35.4
26.7
46.6
-37.1
-28.2
-47.1
1.9
37.1
28.1
48.5
-39.0
-29.8
-49.3
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 42 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
30 ohm Driver @ODT 120 ohm Fix.
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 30 ohm@ODT 120 ohm Fix variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of Figure a.
50
Maximum
Iout(mA)
40
Typical
30
Minimum
20
10
0
-10
0
0.2
0.4
0.6
0.8
1
1.2
Figure a : Pulldown Charateristics
1.4
1.6
1.8
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 30 ohm@ODT 120 ohm Fix variation pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
10
0
Iout(mA)
-10
-20
Minumum
-30
Typical
-40
Maximum
-50
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 30 ohm@ODT 120 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7,
for device drain to source voltage from 0 to VDDQ/2
6. The 30 ohm@ODT 120 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device
drain to source voltages from 0 to VDDQ/2
- 43 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
Minimum
Maximum
0.0
-7.2
-5.8
-8.6
7.6
6.1
9.1
0.1
-2.1
-2.1
-1.4
3.1
2.9
3.4
0.2
2.5
1.1
5.0
-0.9
0.1
-2.0
0.3
6.4
3.9
10.6
-4.6
-2.5
-6.9
0.4
9.8
6.3
15.4
-7.9
-4.9
-11.5
0.5
12.7
8.3
19.5
-10.8
-6.9
-15.5
0.6
15.1
9.9
22.8
-13.4
-8.8
-19.1
0.7
16.9
11.2
25.3
-15.5
-10.3
-21.9
0.8
18.3
12.2
27.2
-17.3
-11.7
-24.3
0.9
19.5
13.1
28.7
-18.9
-12.9
-26.3
1.0
20.6
14.0
30.0
-20.4
-14.1
-28.1
1.1
21.6
14.8
31.2
-21.7
-15.2
-29.7
1.2
22.6
15.6
32.3
-23.0
-16.2
-31.3
1.3
23.5
16.4
33.4
-24.2
-17.2
-32.7
1.4
24.5
17.1
34.5
-25.4
-18.1
-34.2
1.5
25.4
17.9
35.5
-26.6
-19.1
-35.5
1.6
26.3
18.6
36.5
-27.7
-20.0
-36.9
1.7
27.1
19.4
37.6
-28.8
-20.9
-38.2
1.8
28.0
20.1
38.6
-29.9
-21.8
-39.5
1.9
28.9
20.9
39.6
-31.0
-22.7
-40.7
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 44 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
45 ohm @ ODT OFF
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 45 ohm@ ODT OFF variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines the of the V-I curve of Figure a.
35
Maximum
30
Iout(mA)
25
Typical
20
Minimum
15
10
5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 45 ohm@ODT OFF variation in driver pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
0
-5
Iout(mA)
-10
-15
Minumum
-20
Typical
-25
-30
Maximum
-35
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 45 ohm@ODT OFF variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 45 ohm@ODT OFF variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to
source voltages from 0 to VDDQ/2
- 45 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
2.8
1.9
4.0
-2.2
-1.5
-3.0
Minimum
Maximum
0.2
5.2
3.5
7.5
-4.2
-2.8
-5.7
0.3
7.2
4.9
10.5
-6.0
-4.0
-8.2
0.4
8.8
5.9
13.0
-7.5
-5.0
-10.4
0.5
10.1
6.8
15.0
-8.8
-5.9
-12.3
0.6
11.1
7.3
16.5
-9.8
-6.6
-13.9
0.7
11.7
7.7
17.5
-10.6
-7.1
-15.1
0.8
12.1
7.9
18.1
-11.2
-7.5
-15.9
0.9
12.4
8.0
18.4
-11.7
-7.8
-16.6
1.0
12.5
8.1
18.7
-12.1
-8.1
-17.1
1.1
12.6
8.2
18.8
-12.4
-8.3
-17.5
1.2
12.7
8.3
18.9
-12.7
-8.5
-17.9
1.3
12.8
8.3
19.0
-12.9
-8.7
-18.2
1.4
12.8
8.4
19.1
-13.1
-8.8
-18.5
1.5
12.9
8.4
19.2
-13.3
-9.0
-18.8
1.6
12.9
8.4
19.2
-13.5
-9.1
-19.0
1.7
13.0
8.5
19.3
-13.7
-9.2
-19.2
1.8
13.0
8.5
19.3
-13.8
-9.4
-19.4
1.9
13.1
8.6
19.4
-14.0
-9.5
-19.6
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 46 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
45 ohm Driver @ODT 120 ohm Fix.
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 45 ohm@ODT 120 ohm Fix variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of Figure a.
35
30
Maximum
Iout(mA)
25
20
Typical
15
Minimum
10
5
0
-5
-10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 45 ohm@ODT 120 ohm Fix variation pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
10
5
0
Iout(mA)
-5
-10
-15
-20
Minumum
-25
Typical
-30
Maximum
-35
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 45 ohm@ODT 120 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7,
for device drain to source voltage from 0 to VDDQ/2
6. The 45 ohm@ODT 120 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device
drain to source voltages from 0 to VDDQ/2
- 47 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
Minimum
Maximum
0.0
-7.3
-5.8
-8.6
7.6
6.1
9.2
0.1
-3.7
-3.2
-3.7
4.6
3.9
5.3
0.2
-0.5
-0.9
0.7
1.8
1.9
1.6
0.3
2.4
1.2
4.6
-0.8
0.0
-1.8
0.4
4.8
2.9
8.0
-3.2
-1.7
-4.9
0.5
7.0
4.4
11.0
-5.3
-3.2
-7.8
0.6
8.8
5.7
13.5
-7.1
-4.6
-10.3
0.7
10.2
6.8
15.4
-8.8
-5.8
-12.4
0.8
11.4
7.7
16.9
-10.2
-7.0
-14.2
0.9
12.5
8.6
18.2
-11.5
-8.0
-15.8
1.0
13.5
9.4
19.3
-12.7
-9.0
-17.3
1.1
14.4
10.7
20.5
-13.9
-9.9
-18.6
1.2
15.4
10.9
21.5
-15.0
-10.8
-19.9
1.3
16.3
11.6
22.6
-16.0
-11.7
-21.2
1.4
17.1
12.4
23.6
-17.1
-12.5
-22.4
1.5
18.0
13.1
24.6
-18.1
-13.4
-23.7
1.6
18.9
13.8
25.6
-19.1
-14.2
-24.8
1.7
19.8
14.6
26.6
-20.1
-15.0
-16.0
1.8
20.6
15.3
27.6
-21.1
-15.8
-27.2
1.9
21.5
16.0
28.6
-22.1
-16.7
-28.3
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 48 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
60 ohm @ODT OFF
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 60 ohm@ODT OFF variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines the of the V-I curve of Figure a.
16
Maximum
14
Iout(mA)
12
10
Typical
8
6
Minimum
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 60 ohm@ODT OFF variation in drive pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
0
-2
Iout(mA)
-4
-6
Minumum
-8
-10
Typical
-12
-14
Maximum
-16
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 60 ohm@ODT OFF variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 60 ohm@ODT OFF variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to
source voltages from 0 to VDDQ/2
- 49 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
2.0
1.4
2.9
-1.6
-1.1
-2.2
0.2
3.7
2.5
5.4
-3.1
-2.1
-4.2
0.3
5.1
3.5
7.5
-4.4
-2.9
-6.0
0.4
6.3
4.2
9.3
-5.5
-3.7
-7.6
Minimum
Maximum
0.5
7.3
4.8
10.7
-6.4
-4.3
-9.0
0.6
7.9
5.2
11.8
-7.2
-4.8
-10.1
0.7
8.4
5.5
12.5
-7.7
-5.2
-11.0
0.8
8.7
5.7
12.9
-8.2
-5.5
-11.6
0.9
8.8
5.8
13.2
-8.5
-5.7
-12.1
1.0
8.9
5.8
13.3
-8.8
-5.9
-12.4
1.1
9.0
5.9
13.4
-9.0
-6.0
-12.7
1.2
9.1
5.9
13.5
-9.2
-6.2
-13.0
1.3
9.1
5.9
13.6
-9.4
-6.3
-13.2
1.4
9.2
6.0
13.6
-9.5
-6.4
-13.5
1.5
9.2
6.0
13.7
-9.7
-6.5
-13.6
1.6
9.2
6.0
13.7
-9.8
-6.6
-13.8
1.7
9.3
6.0
13.8
-9.9
-6.7
-14.0
1.8
9.3
6.1
13.8
-10.1
-6.8
-14.1
1.9
9.3
6.2
13.8
-10.2
-6.9
-14.3
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 50 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
60 ohm Driver @ODT 120 ohm Fix.
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
Iout(mA)
2. The 60 ohm@ODT 120 ohm fix variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of Figure a.
25
Maximum
20
Typical
15
Minimum
10
5
0
-5
-10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 60 ohm@ODT 120 ohm fix variation in drive pullup current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve of Figrue b.
10
5
Iout(mA)
0
-5
-10
-15
Minumum
-20
Typical
Maximum
-25
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Vout(V)
Figure b : PulluP Charateristics
5. The 60 ohm@ODT 120 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7,
for device drain to source voltage from 0 to VDDQ/2
6. The 60 ohm@ODT 120 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device
drain to source voltages from 0 to VDDQ/2
- 51 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical
Minimum
Maximum
Typical
Minimum
Maximum
0.0
-7.3
-5.8
-8.7
7.6
6.1
9.2
0.1
-4.5
-3.7
-4.9
5.2
4.3
6.1
0.2
-2.0
-1.9
-1.4
2.9
2.7
3.2
0.3
0.3
-0.2
1.6
0.8
1.1
0.5
0.4
2.3
1.2
4.3
-1.1
-0.3
-2.1
0.5
4.1
2.5
6.7
-2.9
-1.6
-4.4
0.6
5.6
3.6
8.7
-4.5
-2.8
-6.5
0.7
6.9
4.6
10.4
-5.9
-3.9
-8.3
0.8
8.0
5.5
11.7
-7.1
-4.9
-9.9
0.9
9.0
6.3
12.9
-8.3
-5.9
-11.3
-12.6
1.0
9.9
7.0
14.0
-9.4
-6.8
1.1
10.8
7.8
15.1
-10.5
-7.6
-13.9
1.2
11.7
8.5
16.1
-11.5
-8.5
-15.1
1.3
12.6
9.3
17.1
-12.5
-9.3
-16.3
1.4
13.5
10.0
18.1
-13.5
-10.1
-17.4
1.5
14.2
10.7
19.1
-14.5
-10.9
-18.5
1.6
15.2
11.4
20.1
-15.5
-11.7
-19.7
1.7
16.1
12.1
21.1
-16.4
-12.5
-20.8
1.8
16.9
12.8
22.1
-17.4
-13.3
-21.0
1.9
17.8
13.6
23.1
-18.3
-14.1
-23.0
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 52 -
Rev. 1.7 (Jan. 2003)