Photocoupler K5640 • K5641 DIMENSION These Photocouplers cosist of two Gallium Arsenide Infrared Emitting (Unit : mm) Diodes and a Silicon NPN PhotoDarlington transistor in a 6-pin package. FEATURES • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.500% (at IF=A1mA, VCE=2V) • Electrical Isolation Voltage : AC5000Vrms • Without Base Connection : K5640 • With Base Connection : K5641 • UL Recognized File No. E107486 PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4 1 2 3 6 5 4 1 2 3 K5640 APPLICATIONS • Interface between two circuits of different potential • Telephone Line Receiver • Automatic Vending Machine • Power Supply Regulators MAXIMUM RATINGS Parameter (Ta=25℃ ) Symbol Forward Current Input K5641 Peak Forward Current *1 Rating Unit IF ±60 mA IFP ±1 A PD 150 mW TJ 125 ℃ Collector-Emitter Breakdown Voltage BVCEO 35 V Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage** BVCBO 35 V IC 50 mA PC 150 mW Viso AC5000 Vrms Storage Temperature Tstg -55~+125 ℃ Operating Temperature Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Power Dissipation Junction Temperature Output Collector Current Collector Power Dissipation Input to Output Isolation Voltage Lead Soldering Temperature *2 *3 Total Power Dissipation ** Except for K5640 *1. Input current with 100ms pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 Photocoupler K5640 • K5641 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol VF IF= Capacitance CT V=0, f=1MHz 10mA - 1.15 1.30 V - 30 - pF 35 - - V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage ** BVCBO IC=0.1mA 35 - - V - 100 nA Collector Dark Current Capacitance Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled Condition Forward Voltage (Ta=25℃ , unless otherwise noted) Min. Unit. Typ. Max. Input-Output Capacitance ICEO IF=0, VCE=10V - CCE VCE=0, f=1MHz CTR IF= ±1mA, VCE=2V VCE(SAT) IF= ±1mA, IC=2mA V=0, f=1MHz CIO 10 - pF 500 - % - 0.85 1.0 V - 1 - pF 11 RH=40~60%, V=500V - 10 - Ω Rise Time tr VCE=10V, RL=100 - 100 - ㎲ Fall Time tf IC=2mA - 100 - ㎲ Input-Output Isolation Resistance RIO ** Except for K5640 *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K5640 • K5641 Forward Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature 250 Collector Power Dissipation PC (mW) 50 30 20 10 0 20 40 80 60 100 Forward Current IF (mA) 200 40 0 -20 150 100 50 0 -20 0 20 40 60 80 Ambient TemperatureTa (℃) Ambient Temperature Ta (℃) Collector Current vs. Collector-Emitter Voltage Dark Current vs. Ambient Temperature I F =2.5mA 30 I F =2mA I F =1.5mA P C (max.) 20 I F =1mA 10 I F =0.5mA 0 2 4 6 8 10 Collector-Emitter Voltage VCE (V) Ta=70℃ 80 60 Ta=-55℃ 20 0 0.4 0.001 0 VCE =10V 20 40 R VCC VO Test Circuit Input Output 10% tr 80 tf Waveform 3/3 60 2.0 Ta =25℃ V CE =2V 50 40 30 20 10 0 100 Ambient Temperature Ta (℃) RL 90% 60 1.6 Collector Current vs. Forward Current VCE =24V 0.01 1.2 0.8 Forward Voltage VF (V) 1 0.1 Ta=25℃ 40 100 Switching Time Test Circuit V IN 100 ~ Dark Current ICEO (uA ) I F =3mA 40 120 100 10 Ta=25℃ Collector Current IC (mA) 140 Collector Current IC (mA) Forward current IF (mA) 60 Forward Current vs. Forward Voltage 1 3 5 7 9 Forward Current IF (mA) 11