www.fairchildsemi.com KA1L0880B/KA1M0880B Fairchild Power Switch(FPS) Features Description • • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. Precision fixed operating frequency KA1L0880B(50KHz),KA1M0880B(67KHz) Pulse by pulse over current limiting Over load protection Over voltage protection (Min. 23V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Latch up mode Soft start TO-3P-5L 1 1. DRAIN 2. GND 3. VCC 4. FB 5. S/S Internal Block Diagram #3 VCC 32V 5V Vref Internal bias #1 DRAIN SFET Good logic #5 Soft Start OSC 5V S R − #4 FB 5µA 1mA 2.5R 1R 9V 0.1V − + 25V L.E.B + + 7.5V − Q S Thermal S/D R Q #2 GND Power on reset OVER VOLTAGE S/D Rev.1.0.2 ©2001 Fairchild Semiconductor Corporation KA1L0880B/KA1M0880B Absolute Maximum Ratings Parameter Maximum Drain voltage (1) Drain-Gate voltage (RGS=1MΩ) Gate-source (GND) voltage Drain current pulsed (2) Single pulsed avalanche energy Avalanche (3) current (4) Symbol Value Unit VD,Max 800 V VDGR 800 V VGS ±30 V IDM 32.0 ADC EAS 810 mJ IAS 15 A Continuous drain current (TC=25°C) ID 8.0 ADC Continuous drain current (TC=100°C) ID 5.6 ADC VCC,MAX 30 V VFB −0.3 to VSD V Maximum Supply voltage Input voltage range Total power dissipation Operating ambient temperature Storage temperature PD 190 W Derating 1.54 W/°C TA −25 to +85 °C TSTG −55 to +150 °C Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, VDD=50V, RG=25Ω, starting Tj=25°C 4. L=13µH, starting Tj=25°C 2 KA1L0880B/KA1M0880B Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain source breakdown voltage Symbol Condition Min. Typ. Max. Unit BVDSS VGS=0V, ID=50µA 800 - - V VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Zero gate voltage drain current IDSS RDS(ON) VGS=10V, ID=5.0A - 1.2 1.5 Ω Forward transconductance (note) gfs VDS=15V, ID=5.0A 1.5 2.5 - S Input capacitance Ciss - 2460 - - 210 - - 64 - Static drain source on resistance (note) Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time tr td(off) Fall time tf Total gate charge (gate-source+gate-drain) Qg Gate source charge Qgs Gate drain (Miller) charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=8.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=8.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) - - 90 - 95 200 - 150 450 - 60 150 - - 150 - 20 - - 70 - pF nS nC Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 1 S = ---R 3 KA1L0880B/KA1M0880B Electrical Characteristics (CONTROL part) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Start threshold voltage VSTART - 14 15 16 V Stop threshold voltage VSTOP After turn on 9 10 11 V KA1L0880B 45 50 55 KA1M0880B 61 67 73 - ±5 ±10 % 74 77 80 % UVLO SECTION OSCILLATOR SECTION Initial accuracy FOSC Frequency change with temperature (2) ∆F/∆T Maximum duty cycle Dmax −25°C ≤ Ta ≤ +85°C kHz FEEDBACK SECTION Feedback source current IFB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Feedback voltage VSD - 6.9 7.5 8.1 V Idelay Ta=25°C, 5V ≤ Vfb ≤ VSD 4.0 5.0 6.0 µA Shutdown delay current SOFT START SECTION Soft Start Voltage VSS VFB =2V 4.7 5.0 5.3 V Soft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mA Vref Ta=25°C 4.80 5.00 5.20 V −25°C ≤ Ta ≤ +85°C - 0.3 0.6 mV/°C Max. inductor current 4.40 5.00 5.60 A REFERENCE SECTION Output voltage (1) Temperature Stability (1)(2) Vref/∆T CURRENT LIMIT (SELF-PROTECTION) SECTION Peak Current Limit IOVER PROTECTION SECTION Thermal shutdown temperature (Tj) (1) Over voltage protection voltage TSD - 140 160 - °C VOVP - 23 25 28 V TOTAL DEVICE SECTION Start Up current ISTART VCC=14V 0.1 0.3 0.45 mA Operating supply current (control part only) IOP Ta=25°C 6 12 18 mA VCC zener voltage VZ ICC=20mA 30 32.5 35 V Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 KA1L0880B/KA1M0880B Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25°C) Fig.2 Feedback Source Current Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 Temperature [°C] Figure 1. Operating Frequency Fig.3 Operating Current 1.2 1.15 1.1 1.05 IIop OP 1 0.95 0.9 0.85 0.8 -25 100 125 150 Fig.4 Max Inductor Current 1.1 1.05 IIpeak over 1 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 3. Operating Supply Current Figure 4. Peak Current Limit Fig.5 Start up Current Fig.6 Start Threshold Voltage 1.15 1.3 1.1 IIstart ST 1.1 1.05 Vth(H) Vstart 1 0.9 0.95 0.7 0.5 -25 75 Figure 2. Feedback Source Current Temperature [°C] 1.5 50 Temperature [°C] 0.9 0 25 50 75 100 125 150 Temperature [°C] Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 6. Start Threshold Voltage 5 KA1L0880B/KA1M0880B Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.7 Stop Threshold Voltage 1.15 Fig.8 Maximum Duty Cycle 1.15 1.1 1.1 1.05 1.05 Vth(L) 1 Vstop Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 0.85 -25 0 Temperature [°C] Figure 7. Stop Threshold Voltage 50 75 100 125 150 Figure 8. Maximum Duty Cycle Fig.10 Shutdown Feedback Voltage Fig.9 Vcc Zener Voltage 1.15 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 Temperature [°C] 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 25 Temperature [°C] Figure 9. VCC Zener Voltage Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Temperature [°C] Figure 11. Shutdown Delay Current 6 25 Temperature [°C] 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 12. Over Voltage Protection KA1L0880B/KA1M0880B Typical Performance Characteristics (Continued) (These characteristic grahps are normalized at Ta=25°C) Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on Resistance 1.15 2.5 1.1 1.05 2 Vss 1 0.95 1.5 ( Rdson )1 0.9 0.5 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 13. Soft Start Voltage 0 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 14. Static Drain Source on Resistance 7 KA1L0880B/KA1M0880B Package Dimensions TO-3P-5L 8 KA1L0880B/KA1M0880B Package Dimensions TO-3P-5L (Forming) 9 KA1L0880B/KA1M0880B Ordering Information Product Number KA1L0880B-TU KA1L0880B-YDTU KA1M0880B-TU KA1M0880B-YDTU Package TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Rating Fosc 800V, 8A 50kHz 800V, 8A 67kHz TU : Non Forming Type YDTU : Forming type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 10/17/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation