www.fairchildsemi.com KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Fairchild Power Switch(FPS) Features Description • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. Precision fixed operating frequency (100/67/50KHz) Pulse by pulse current limiting Over current protection Over voltage protection (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto-restart mode TO-220F-4L 8-DIP TO220-5L 1 1 1. GND 2. Drain 3. Vcc 4. FB 1.6.7.8. Drain 2. GND 3. Vcc 4. FB 5. NC 1 1. Drain 2. GND 3. Vcc 4. FB 5. S/S Internal Block Diagram VCC 32V 5V Vref Internal bias DRAIN SFET Good logic Soft Start uA OSC 5V S R − FB 5µA 1mA 2.5R 1R 9V 0.1V − + 27V L.E.B + + 7.5V − Q S Thermal S/D R GND Q Power on reset OVER VOLTAGE S/D Rev.1.0.2 ©2001 Fairchild Semiconductor Corporation KA5X02XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VD,MAX 650 V VDGR 650 V VGS ±30 V IDM 8.0 ADC ID 2.0 ADC KA5x0265xRx Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation ID 1.3 ADC EAS 68 mJ VCC,MAX 30 V VFB −0.3 to VSD V PD 42 W Derating 0.33 W/°C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA −25 to +85 °C TSTG −55 to +150 °C VD,MAX 800 V VDGR 800 V VGS ±30 V Storage Temperature Range. KA5x0280R Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage (1) IDM 8.0 ADC Continuous Drain Current (TC=25°C) ID 2.0 ADC Continuous Drain Current (TC=100°C) ID 1.3 ADC EAS 90 mJ VCC,MAX 30 V VFB −0.3 to VSD V PD 35 W Derating 0.28 W/°C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA −25 to +85 °C TSTG −55 to +150 °C Drain Current Pulsed Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Storage Temperature Range. (2) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=51mH, starting Tj=25°C 2 KA5X02XX-SERIES Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit BVDSS VGS=0V, ID=50µA 650 - - V KA5x0265xRx Drain-source breakdown voltage VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA RDS(ON) VGS=10V, ID=0.5A - 5.0 6.0 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 550 - VGS=0V, VDS=25V, f=1MHz - 38 - - 17 - - 20 - - 15 - - 55 - - 25 - - - 35 - 3 - - 12 - Zero gate voltage drain current Static drain-source on resistance (note) Forward transconductance IDSS (note) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time tr Turn off delay time td(off) Fall time tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) pF nS nC KA5x0280R Drain-source breakdown voltage BVDSS 800 - - V VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA RDS(ON) VGS=10V, ID=0.5A - 5.6 7.0 Ω gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 250 - - 52 - - 25 - - 21 - - 28 - - 77 - - 24 - - - 60 - 15 - - 20 - Zero gate voltage drain current Static drain-source on resistance (note) Forward transconductance IDSS (note) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time tr td(off) Fall time tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, ID=50µA VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) pF nS nC Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 1S = --R 3 KA5X02XX-SERIES Electrical Characteristics (CONTROL part) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V Initial accuracy FOSC KA5H0265xRx KA5H0280R 90 100 110 kHz Initial accuracy FOSC KA5M0265xRx KA5M0280R 61 67 73 kHz FOSC KA5L0265R 45 50 55 kHz ∆F/∆T −25°C ≤ Ta ≤ +85°C - ±5 ±10 % Maximum duty cycle Dmax KA5H0265xRx KA5H0280R 62 67 72 % Maximum duty cycle Dmax KA5M0265xRx KA5M0280R KA5L0265R 72 77 82 % OSCILLATOR SECTION Initial accuracy Frequency change with temperature (2) FEEDBACK SECTION Feedback source current IFB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown feedback voltage VSD Vfb ≤ 6.5V 6.9 7.5 8.1 V 4 5 6 µA 4.7 5.0 5.3 V 0.8 1.0 1.2 mA 4.80 5.00 5.20 V - 0.3 0.6 mV/°C Shutdown delay current Idelay Ta=25°C, 5V ≤ Vfb ≤ VSD SOFT START SECTION Soft Start Voltage VSS Soft Start Current ISS KA5H0265RC REFERENCE SECTION Output voltage (1) Vref Temperature Stability (1)(2) Vref/∆T Ta=25°C −25°C ≤ Ta ≤ +85°C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER KA5x02659RN 0.79 0.9 1.01 A Peak Current Limit IOVER KA5x0265Rx KA5x0280R 1.05 1.2 1.34 A VOVP VCC ≥ 24V 25 27 29 V 140 160 - °C PROTECTION SECTION Over voltage protection Thermal shutdown temperature (Tj) (1) TSD - TOTAL DEVICE SECTION Start Up Current Operating supply current (control part only) ISTART VCC=14V - 100 170 µA IOPR VCC ≤ 28 - 7 12 mA Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 KA5X02XX-SERIES Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25°C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Fig.2 Feedback Source Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 Temperature [°C] Figure 1. Operating Frequency Fig.3 Operating Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 100 125 150 1.1 Fig.4 Max Inductor Current 1.05 IIpeak over 1 0.95 0.9 0.85 0 25 50 75 100 125 150 Figure 3. Operating Supply Current 0.8 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 4. Peak Current Limit Fig.5 Start up Current Fig.6 Start Threshold Voltage 1.15 1.1 1.3 1.05 1.1 Istart Vstart 1 0.9 0.95 0.7 0.5 -25 75 Figure 2. Feedback Source Current Temperature [°C] 1.5 50 Temperature [°C] 0.9 0 25 50 75 100 125 150 Temperature [°C] Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 6. Start Threshold Voltage 5 KA5X02XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°°C) Fig.7 Stop Threshold Voltage 1.15 Fig.8 Maximum Duty Cycle 1.15 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 0.85 -25 0 Temperature [°C] Figure 7. Stop Threshold Voltage 50 75 100 125 150 Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage Fig.10 Shutdown Feedback Voltage 1.15 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 Temperature [°C] Figure 9. VCC Zener Voltage 25 50 75 100 125 150 Temperature [°C] Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Temperature [°C] Figure 11. Shutdown Delay Current 6 25 Temperature [°C] 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 12. Over Voltage Protection KA5X02XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°°C) Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on Resistance 1.15 2.5 1.1 2 1.05 1 1.5 0.95 Rdson ( )1 0.9 0.5 Vss 0.85 -25 0 25 50 75 100 125 Temperature [°C] Figure13. Soft Start Voltage 150 0 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 14. Static Drain-Source on Resistance 7 KA5X02XX-SERIES Package Dimensions TO-220F-4L 8 KA5X02XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) 9 KA5X02XX-SERIES Package Dimensions (Continued) 8-DIP 10 KA5X02XX-SERIES Package Dimensions (Continued) TO-220-5L 11 KA5X02XX-SERIES Package Dimensions (Continued) TO-220-5L(Forming) 12 KA5X02XX-SERIES Ordering Information Product Number KA5H0265RC-TU Package TO-220-5L KA5H0265RC-YDTU TO-220-5L(Forming) KA5M0265R-TU KA5M0265R-YDTU KA5L0265R-TU KA5L0265R-YDTU Product Number KA5H0280R-TU KA5H0280R-YDTU KA5M0280R-TU TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L Marking Code BVDSS FOSC RDS(on) 5H0265RC 650V 100kHz 5Ω 5M0265R 650V 67kHz 5Ω 5L0265R 650V 50kHz 5Ω Marking Code BVDSS FOSC RDS(on) 5H0280R 800V 100kHz 5.6Ω 5M0280R 800V 67kHz 5.6Ω KA5M0280R-YDTU TO-220F-4L(Forming) Product Number Package Marking Code BVDSS FOSC RDS(on) KA5H02659RN 8-DIP 5H02659R 650V 100kHz 5Ω KA5M02659RN 8-DIP 5M02659R 650V 67kHz 5Ω TU : Non Forming Type YDTU : Forming Type 13 KA5X02XX-SERIES DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 11/23/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation