KEC KIC7SZ14FU

KIC7SZ14FU
SEMICONDUCTOR
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
TECHNICAL DATA
SCHMITT INVERTER
FEATURES
・High output drive : ±24mA(min.) @VCC=3V.
・High Speed : tpd=3.7ns(typ.) @VCC=5V, 50pF.
B
・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V.
B1
・High Latch-Up Immunity : Higher than or equal to ±500mA.
1
DIM
A
A1
B
5
A
2
C
: Higher than or equal to ±2000V(MIL)
A1
C
・High ESD : Higher than or equal to ±200V(JEITA)
3
・Power down protection is provided on all inputs and outputs.
4
D
B1
C
D
G
H
H
T
T
MILLIMETERS
_ 0.20
2.00 +
_ 0.1
1.3 +
_ 0.1
2.1 +
_ 0.1
1.25 +
0.65
0.2+0.10/-0.05
0-0.1
_ 0.1
0.9 +
0.15+0.1/-0.05
G
MAXIMUM RATINGS (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage Range
VCC
-0.5~6
V
DC Input Voltage
VIN
-0.5~6
V
DC Output Voltage
VOUT
-0.5~6
V
Input Diode Current
IIK
-20
mA
Output Diode Current
IOK
-20
mA
DC Output Current
IOUT
±50
mA
DC VCC/ground Current
ICC
±50
mA
Power Dissipation
PD
200
mW
Storage Temperature Range
Tstg
-65～150
℃
Lead Temperature (10s)
TL
260
℃
USV
MARKING
Type Name
T F
PIN CONNECTION(TOP VIEW)
2002. 4. 22
Revision No : 0
NC
1
IN A
2
GND
3
5
V CC
4
OUT Y
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KIC7SZ14FU
Logic Diagram
OUT Y
IN A
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
Supply Voltage
VCC
Input Voltage
VIN
RATING
1.65~5.5
1.5~5.5
Topr
Operating Temperature
V
(Note1)
0~5.5
VOUT
Output Voltage
UNIT
V
0~5.5
(Note2)
0~VCC
(Note3)
V
-40~85
℃
Note1 : Data retention only.
Note2 : VCC=0V.
Note3 : High or low state
ELECTRICAL CHARACTERISTICS
DC Characteristics
CHARACTERISTIC
Positive Threshold
Voltage
Negative Threshold
Voltage
Hysteresis Voltage
2002. 4. 22
SYMBOL
VP
VN
VH
Revision No : 0
TEST CONDITION
-
-
-
Ta=25℃
Ta=-40~85℃
VCC(V)
MIN.
TYP.
MAX.
MIN.
MAX.
1.65
0.6
1.0
1.4
0.65
1.4
1.8
0.7
1.1
1.5
0.7
1.5
2.3
1.0
1.4
1.8
1.0
1.8
3.0
1.3
1.75
2.2
1.3
2.2
4.5
1.9
2.45
3.1
1.9
3.1
5.5
2.2
2.9
3.6
2.2
3.6
1.65
0.2
0.5
0.8
0.2
0.8
1.8
0.25
0.55
0.9
0.25
0.9
2.3
0.40
0.75
1.15
0.40
1.15
3.0
0.6
1.0
1.5
0.6
1.5
4.5
1.0
1.43
2.0
1.0
2.0
5.5
1.2
1.70
2.4
1.2
2.4
1.65
0.1
0.48
0.9
0.1
1.0
1.8
0.15
0.54
1.0
0.15
1.0
2.3
0.25
0.65
1.1
0.25
1.1
3.0
0.4
0.77
1.2
0.4
1.2
4.5
0.6
1.01
1.5
0.6
1.5
5.5
0.7
1.18
1.7
0.7
1.7
UNIT
V
V
V
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KIC7SZ14FU
CHARACTERISTIC
TEST CONDITION
SYMBOL
Ta=25℃
VCC(V)
MIN.
TYP.
MAX.
MIN.
MAX.
1.65
1.55
1.65
-
1.55
-
1.8
1.7
1.8
-
1.7
-
2.3
2.2
2.3
-
2.2
-
3.0
2.9
3.0
-
2.9
-
4.5
4.4
4.5
-
4.4
-
IOH=-4mA
1.65
1.29
1.52
-
1.29
-
IOH=-8mA
2.3
1.9
2.15
-
1.9
-
IOH=-16mA
3.0
2.4
2.8
-
2.4
-
IOH=-24mA
3.0
2.3
2.68
-
2.3
-
IOH=-32mA
4.5
3.8
4.2
-
3.8
-
1.65
-
0
0.1
-
0.1
1.8
-
0
0.1
-
0.1
2.3
-
0
0.1
-
0.1
3.0
-
0
0.1
-
0.1
4.5
-
0
0.1
-
0.1
IOL=4mA
1.65
-
0.08
0.24
-
0.24
IOL=8mA
2.3
-
0.1
0.3
-
0.3
IOL=16mA
3.0
-
0.15
0.4
-
0.4
IOL=24mA
3.0
-
0.22
0.55
-
0.55
IOL=32mA
4.5
-
0.22
0.55
-
0.55
IOH=-100μA
High-Level
Output Voltage
VOH
VIN=VIL
IOL=100μA
VOL
VIN=VIH
Ta=-40~85℃
UNIT
V
V
Input Leakage Current
IIN
VIN=5.5V or GND
0~5.5
-
-
±1
-
±10
μA
Power OFF
Leakage Current
IOFF
VIN or VOUT=5.5V
0.0
-
-
1
-
10
μA
Quiescent Supply Current
ICC
VIN=5.5V or GND
1.65~5.5
-
-
1
-
10
μA
AC Characteristics (unless otherwise specified, Input : tr=tf=3ns)
CHARACTERISTIC
Propagation delay time
TEST CONDITION
SYMBOL
tPLH
tPHL
CL=15pF, RL=1MΩ
CL=50pF, RL=500Ω
Input Capacitance
CIN
-
Ta=25℃
Ta=-40~85℃
VCC(V)
MIN.
TYP.
MAX.
MIN.
MAX.
1.65
2.0
9.1
15.0
2.0
15.6
1.8
2.0
7.6
12.5
2.0
13
2.5±0.2
1.0
5.0
9.0
1.0
9.5
3.3±0.3
1.0
3.7
6.3
1.0
6.5
5.0±0.5
0.5
3.1
5.2
0.5
5.5
3.3±0.3
1.5
4.4
7.2
1.5
7.5
5.0±0.5
0.5
3.7
5.9
0.8
6.2
-
-
-
-
-
Power Dissipation
CPD
(Note4)
Capacitance
Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption
without load. Average operating current can be obtained by the equation : ICC(opr)=CPD・VCC・fIN+ICC
2002. 4. 22
Revision No : 0
UNIT
ns
ns
pF
pF
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