KSC2258/2258A KSC2258/2258A High Voltage General Amplifier TV Video Output Amplifier • High BVCEO TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSC2258 : KSC2258A 250 300 V V : KSC2258 : KSC2258A 250 300 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 100 mA ICP Collector Current (Pulse) 150 mA PC Collector Dissipation (TC=25°C) TJ TSTG 4 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVEBO Parameter Emitter-Base Breakdown Voltage Test Condition IE = 0.1mA, IC = 0 ICER Collector Cut-off Current VCE = 250V, RBE = 100KΩ hFE1 hFE2 DC Current Gain VCE = 20V, IC = 40mA VCE = 50V, IC = 5mA VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA 1.2 V VBE(on) Base-Emitter On Voltage VCE = -20V, IC = 40mA 1.2 V fT Current Gain Bandwidth Product VCE = 10V, IC = 10mA 100 Cob Output Capacitance VCB = 50V, f = 1MHz 3 ©2000 Fairchild Semiconductor International Min. 6 Typ. Max. Units V 100 µA 40 30 MHz 4.5 pF Rev. A, February 2000 KSC2258/2258A Typical Characteristics 100 1000 IC[mA], COLLECTOR CURRENT 80 60 IB =0.4mA 40 IB=0.2mA 20 VCE = 10V hFE, DC CURRENT GAIN IB =1.8mA IB=1.6mA IB =1.4mA IB =1.2mA IB=1.0mA IB=0.8mA IB =0.6mA IB=2.0mA 100 10 1 0.1 0 0 2 4 6 8 10 1 10 100 IC [mA], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain IC = 10 IB f = 1 MHz 10 COB(pF), CAPACITANCE VCE(sat) [V], SATURATION VOLTAGE 10 1 V CE(sat) 0.1 0.01 1 1 10 100 1000 1 10 VCB [V], COLLECTOR BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 5 1000 VCB = 10 V PD[W], POWER DISSIPATION fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 100 10 4 3 2 1 0 1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 200 225 250 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSC2258/2258A Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E