KSC5021F KSC5021F High Voltage and High Reliability • High Speed Switching : tF = 0.1µs(Typ.) • Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 500 V V CEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A 10 A ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 2 A 40 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 BVCEO BVEBO VCEX (sus) Typ. Max. Units V Collector-Emitter Sustaining Voltage IC = 5mA, IB = 0 500 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V Collector-Emitter Sustaining Voltage IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped 500 V V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V 15 8 50 Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 80 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.6A 15 MHz tON Turn On Time tSTG Storage Time tF Fall Time VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50Ω 0.5 µs 3 µs 0.3 µs hFE Classification Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5021F Typical Characteristics 1000 5 4 IB = 600mA VCE = 5V IB = 400mA IB = 1A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 800mA IB = 1.2A IB = 200mA 3 IB = 100mA 2 IB = 50mA 100 10 1 IB = 20mA IB = 0 0 0 2 4 6 8 1 0.01 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 Figure 2. DC current Gain 10 10 IC = 5 IB tON, tSTG, tF [µs], TIME tSTG VBE(sat) 1 0.1 1 tF tON 0.1 VCE(sat) 0.01 0.01 0.1 1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 100 6 VCE = 5V IC[A], COLLECTOR CURRENT 1 0 0.0 s 2 0µ 50 3 IC(max) s 1m 4 50µs ICP(max) 10 s m 10 IC[A], COLLECTOR CURRENT 5 DC 1 0.1 0.01 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.2 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B1, December 2002 KSC5021F Typical Characteristics (Continued) 60 100 50 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -1A L = 200µH 10 1 0.1 40 30 20 10 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B1, December 2002 KSC5021F Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1