KSC5025 KSC5025 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 15 A ICP Collector Current (Pulse) 25 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 4 A 100 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 2A L = 500µH, Clamped 500 V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A 15 8 50 VCE(sat) Collector-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 1.2A tON Turn On Time tSTG Storage Time tF Fall Time VCC = 200V IC = 5IB1 = -2. 5I B2 = 7A RL = 28.6Ω 160 pF 18 MHz 0.5 µs 3 µs 0.3 µs hFE Classificntion Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5025 Typical Characteristics 16 1000 VCE = 5V IB = 1.4A 12 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 14 IB = 1.2A IB = 1A IB = 800mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA 10 8 6 4 IB = 100mA 2 100 10 IB = 50mA IB = 20mA 0 0 2 4 6 8 10 1 0.01 12 0.1 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 16 VCE = 5V IC = 5 IB 14 1 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) 0.1 VCE(sat) 12 10 8 6 4 2 0.01 0.01 0.1 1 10 0 0.0 100 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10 IC=5.IB 50µs tON tF 0.1 IC(max) 10 s 1 10 m s 0µ 10 IC[A], COLLECTOR CURRENT IC(max).(Pulse) s 1m tON, tSTG, tF [µs], TIME tSTG DC 1 0.1 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2002 Fairchild Semiconductor Corporation 100 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B1, December 2002 KSC5025 Typical Characteristics (Continued) 140 100 120 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -2A L = 100µH 10 1 0.1 100 80 60 40 20 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B1, December 2002 KSC5025 Package Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 3.50 ±0.20 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 16.50 ±0.30 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1