FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value 200 Units V 140 V 6 V Collector Current (DC) 10 A IB Base Current (DC) 1.5 A PC Collector Dissipation (TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=5mA, IE=0 Min. 200 140 BVCEO Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 ICBO Collector Cut-off Current VCB=200V, IE=0 IEBO Emitter Cut-off Current * DC hFE Typ. Max. V 6 V VEB=6V, IC=0 Current Gain VCE=4V, IC=3A Units V 50 10 µA 10 µA 180 VCE(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A Cob Output Capacitance VCB=10V, f=1MHz 250 0.5 pF V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz * Pulse Test : PW=20µs hFE Classification Classification R O Y hFE 50 ~ 100 70 ~ 140 90 ~ 180 ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 FJA4310 Typical Characteristics IB = 300mA 10 IB = 250mA 1000 IB = 200mA IB = 400mA VCE = 4 V 9 8 7 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT IB = 150mA IB = 100mA 6 5 IB = 50mA 4 3 o Ta = 25 C o Ta = 125 C 100 o Ta = - 25 C 2 IB = 20mA 1 10 0.1 0 0 1 2 3 4 1 10 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterstic Figure 2. DC current Gain 3.0 1 VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC = 10 IB 2.5 2.0 1.5 1.0 0.5 IC= - 10A IC= - 5A 0.0 0.0 0.4 0.8 1.2 1.6 o Ta = 125 C 0.1 o Ta = 25 C o Ta = - 25 C 0.01 0.01 2.0 0.1 1 10 IC [A], COLLECTOR CURRENT IB [A], BASE CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage 10 8 6 o 4 2 t=10ms IC (Pulse) IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT VCE = 4 V Ta = 25 C o Ta = 125 C 10 IC (DC) t=100ms 1 o TC = 25 C Single Pulse o Ta = - 25 C 0.1 0 0.0 0.5 1.0 VBE [V], Base-Emitter On VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.5 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Bias Safe Operating Area Rev. B, June 2002 FJA4310 Typical Characteristics (Continued) PC[W], COLLECTOR POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 FJA4310 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H7