KSC5803D KSC5803D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor(85KHz) TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor 50Ω typ. E Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 IC Collector Current (DC) 12 V A ICP Collector Current (Pulse) 24 A PC Collector Dissipation (TC=25°C) 70 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 1400V, VBE=0 Min. Typ. Max. 1 Units mA ICBO Collector Cut-off Current VCB= 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 50 250 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1A VCE = 5V, IC = 8A 15 7 40 10 VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 2A 3 VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 2A 1.5 V tSTG Storage Time 4 µs tF Fall Time VCC = 200V, IC = 7A IB1 = 1.4A, IB2 = - 2.8A RL = 28.6Ω 0.3 µs VF Damper Diode Turn On Voltage IF = 8A 2 V V Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC ©2001 Fairchild Semiconductor Corporation Item Thermal Resistance, Junction to Case Max 1.79 Unit °C/W Rev. A1, June 2001 KSC5803D Typical Characteristics 100 10 8 6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE=5V IB = 1A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A 4 IB = 0.1A 10 2 IB = 0 1 0.1 0 0 2 4 6 8 10 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 12 VCE=5V IC[A], COLLECTOR CURRENT VCE(sat)[mV], SATURATION VOLTAGE 10 1 IC = 5IB IC = 3IB 0.1 0.01 0.1 1 10 8 6 4 2 0 0.0 10 Figure 3. Collector-Emitter Saturation Voltage 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Figure 4. Base-Emitter On Voltage 10 RESISTIVE LOAD VCC = 200V IC = 7A IB1 = 1.4A 10 0m s DC 1 s m 10 tF s µs 0µ 10 10 1 10 s 1m IC[A], COLLECTOR CURRENT 100 tSTG 0.1 0.2 VBE[V], BASE EMITTER VOLTAGE IC[A], COLLECTOR CURRENT tSTG[µs], STORAGE TIME tF[µs], FALL TIME 10 0.1 SINGLE PULSE TC = 25℃ 0.01 0.1 1 - IB2[A], BASE CURRENT Figure 5. Switching Time ©2001 Fairchild Semiconductor Corporation 10 1 10 100 1000 2000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, June 2001 KSC5803D Typical Characteristics (Continued) 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC[℃], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5803D Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3