KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • • • • • • High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control TO-220 1 1.Base NPN Silicon Darlington Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol BVCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Value Units 300 350 400 V V V VCEV Collector-Emitter Voltage : KSE5740 : KSE5741 : KSE5742 600 700 800 V V V V VEBO Emitter-Base Voltage 8 IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) 16 A IB Base Current (DC) 2.5 A IBP *Base Current (Pulse) 5 A PC Collector Dissipation 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Test Condition IC = 50mA, IB=0 ICEV Collector Cut-off Current VCEV=Rate Value, VBE(OFF)=1.5V IEBO Emitter Cut-off Current VEB = 8V, IC= 0 hFE DC Current Gain VCE =5V, IC = 0.5A VCE =5V, IC = 4A VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Min. Typ. Max. 300 350 400 Units V V V 1 mA 75 mA IC =4A, IB = 0.2A IC =8A, IB= 0.4A 2 3 V V Base-Emitter Saturation Voltage IC =4A, IB = 0.2A IC =8A, IB = 0.4A 2.5 3.5 V V VF Diode Forward Voltage IF =5A tD Delay Time VCC = 250V, IC(pk) = 6A IB1 = IB2 = 0.25A tP = 25µs Duty Cycle≤1% tR Rise Time tS Storage Time tF Fall Time tSV Voltage Storage Time tC Cross-over Time IC(pk) = 6A, VCE(pk) = 250V IB1= 0.06A, VBE (off) = 5V 50 200 100 400 2.5 V 0.04 µs 0.5 µs 8 µs 2 µs 4 µs 2 µs * PW=5ms, Duty Cycle=10% ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE5740/5741/5742 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN V CE = 5V 100 10 0.1 1 10 IC = 20 IB V BE(sat) 1 V CE(sat) 0.1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 VCC = 250V IC = 20IB IB1 = IB2 tSTG,tF[µs],TURN OFF TIME VCC = 250V IC = 20IB IB1 = IB2 tR,tD[µs],TURN ON TIME 10 IC[A], COLLECTOR CURRENT tR 1 tD 0.1 0.01 0.1 1 tSTG 1 tF 0.1 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Turn On Time Figure 4. Turn Off Time 100 20 DC IC[A], COLLECTOR CURRENT 10 s 0µ 10 s µ 10 IC[A], COLLECTOR CURRENT VBE(off)= -5V 1m s 5m s 1 0.1 16 12 8 4 E5740 E5741 E5742 E5740 E5741 E5742 0 0.01 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 0 100 200 300 400 500 VCE[V],COLLECTOR EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area Rev. A1, June 2001 KSE5740/5741/5742 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 1. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE5740/5741/5742 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3