KSC5020 KSC5020 High Voltage, High Quality • High Speed Switching : tF=0.1µs • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A A ICP Collector Current (Pulse) 6 IB Base Current (DC) 1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 Typ. Max. BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped 500 V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A 15 8 Units V 50 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V Cob Output Capacitance VCB = 10V, f = 1MHz 50 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.3A 18 MHz VCC = 200V IC=5IB1 = -2.5IB2=2A RL = 100Ω tON Turn On Time tSTG Storage Time tF Fall Time 0.5 µs 3 µs 0.3 µs hFE Classification Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5020 Typical Characteristics 1000 4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 500mA 3 IB = 400mA IB = 300mA IB = 200mA 2 IB = 100mA IB = 50mA 1 100 10 IB = 20mA IB = 0 0 0 2 4 6 8 1 0.01 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCC= 200V IC= 5IB1= -2.5IB2 IC = 5 IB tON, tSTG, tF [µs], TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 0.1 1 tSTG 1 tON tF 0.1 0.01 0.1 10 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Turn On, Storage and Fall Time vs. Collector Current 4 100 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.6 50µs ICP(max) IC(max) P= C 4 0W 1 s 2 10 0µ 10 IC[A], COLLECTOR CURRENT 3 s 1m s m 10 IC[A], COLLECTOR CURRENT VCE = 5V DC 0.1 0.01 1E-3 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Bias Safe Operating Area Rev. B1, December 2002 KSC5020 Typical Characteristics (Continued) 50 IB2 = -0.6A L = 200µH PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 10 1 0.1 40 30 20 10 0 0.01 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B1, December 2002 KSC5020 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1