LESHAN RADIO COMPANY, LTD. N-CHANNEL MOSFET 600V - 13 Ω - 0.8A General features Type L1N60A L1N60A VDSS RDS(on) ID Pw 600V <15Ω 0.3A 3W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ New high voltage benchmark Description TO-92 Internal schematic diagram The L1N60A is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time,low gate charge,low on-state restance. Applications ■ Switching application ) 1/9 LESHAN RADIO COMPANY, LTD. L1N60A Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-92 VDS Drain-Source Voltage (V GS = 0) 600 V VDGR Drain-Gate Voltage (RGS = 20KΩ) 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at T C = 25°C 0.3 A ID Drain Current (continuous) at T C=100°C 0.189 A 1.2 A 3 W Derating Factor 0.25 W/°C Gate source ESD(HBM-C=100pF, R=1.5KΩ) 800 V Peak Diode Recovery voltage slope 4.5 V/ns -55 to 150 °C IDM(1) Drain Current (pulsed) PTOT Total Dissipation at T C = 25°C VESD(G-D) dv/dt(2) TJ Tstg Operating Junction Temperature Storage Temperature 1. Pulse width limited by safe operating area 2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS Table 2. Thermal resistance Value Symbol Parameter Unit TO-92 Rthj-case Rthj-a Rthj-lead Tl Thermal resistance junction-case Max -- °C/W Thermal resistance junction-ambient Max 120 °C/W Thermal resistance junction-lead Max 40 °C/W Maximum lead temperature for soldering purpose 260 °C 1. When mounted on 1 inch² FR-4 board, 2 Oz Cu Table 3. Symbol Avalanche data Parameter Value Unit IAR Avalanche Curent, Repetitive or Noy-Repetitive (pulse width limited by Tj Max) 0.8 A EAS Single pulse avalanche Energy (starting Tj=25°C, Id=Iar, Vdd=50V) 60 mJ 2/9 LESHAN RADIO COMPANY, LTD. L1N60A Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test Condictions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current VGS = ±20V (VDS = 0) ID = 1mA, VGS= 0 Typ. VDS= V GS, ID = 50µA RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 0.4A 3 Unit V 1 50 µA µA ±10 µA 3.75 4..5 V 13 15 Ω Typ. Max. Unit VDS = MaxRating @125°C Gate Threshold Voltage Max. 600 VDS = Max Rating, VGS(th) Table 5. Min. Dynamic Symbol Parameter gfs (1) Forward Transconductance VDS =15V, ID = 0.4A 0.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, V GS=0 94 17.6 2.8 pF pF pF VGS=0, V DS =0V to 480V 11 pF VDD=480V, ID = 0.8A 4.9 1 2.7 Ciss Coss Crss Coss eq(2). Equivalent Output Capacitance Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Condictions VGS =10V (see Figure 11) Min. 6.9 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS inceases from 0 to 80% VDSS 3/9 LESHAN RADIO COMPANY, LTD. L1N60A Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Condictions Min. Typ. Max. 5.5 5 13 28 VDD =300 V, ID= 0.4A, RG=4.7Ω, VGS=10V (see Figure 19) Unit ns ns ns ns Source drain diode Max Unit Source-drain Current 0.8 A ISDM(1) Source-drain Current (pulsed) 2.4 A VSD(2) Forward on Voltage ISD=0.8A, VGS=0 1.6 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs, VDD =20V, Tj=25°C Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs, VDD =20V, Tj=150°C ISD trr Qrr IRRM trr Qrr IRRM Parameter Test Condictions Min ISD=0.8A, ISD=0.8A, Typ. 135 216 3.2 ns nC A 140 224 3.2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-source Braekdown Voltage Test Condictions Igs=±1mA (Open Drain) Min. 30 Typ. Max. Unit V 4/9 LESHAN RADIO COMPANY, LTD. L1N60A Electrical characteristics (curves) Figure 1. Safe operating area for TO-92 Figure 3. Output characterisics Figure 2. Thermal impedance for TO-92 Figure 4. Transfer characteristics 5/9 LESHAN RADIO COMPANY, LTD. L1N60A Figure 5. Transconductance Figure 7. Gate charge vs gate-source voltage Figure 6. Static drain-source on resistance Figure 8. Capacitance variations 6/9 LESHAN RADIO COMPANY, LTD. L1N60A Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Figure 13. Maximum avalanche energy vs temperature Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature Figure 14. Max Id Current vs Tc 7/9 LESHAN RADIO COMPANY, LTD. L1N60A Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 8/9 LESHAN RADIO COMPANY, LTD. L1N60A TO-92 MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. TYP 4.95 0.170 TYP. 0.194 MAX. 0.020 b 0.36 0.51 0.014 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 5° 5° 9/9