Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview Package Dimensions The LC36256AL, AML are fully asynchronous silicon gate CMOS static RAMs with an 32768 words × 8 bits configuration. unit: mm 3012A - DIP28 [LC36256AL] This series have CE chip enable pin for device select/nonselect control and an OE output enable pin for output control, and features high speed as well as low power dissipation. For these reasons, the series is especially suited for use in systems requiring high speed, low power, and battery backup, and it is easy to expand memory capacity. Features • Access time 70 ns (max.) : LC36256AL-70, LC36256AML-70 85 ns (max.) : LC36256AL-85, LC36256AML-85 100 ns (max.) : LC36256AL-10, LC36256AML-10 120 ns (max.) : LC36256AL-12, LC36256AML-12 • Low current dissipation During standby 2 µA (max.) / Ta = 25°C 5 µA (max.) / Ta = 0 to +40°C 25 µA (max.) / Ta = 0 to +70°C SANYO: DIP28 unit : mm 3187 - SOP28D [LC36256AML] During data retention 1 µA (max.) / Ta = 25°C 2 µA (max.) / Ta = 0 to +40°C 10 µA (max.) / Ta = 0 to +70°C During operation (DC) 10 mA (max.) • • • • • • Single 5 V power supply: 5 V ±10% Data retention power supply voltage: 2.0 to 5.5 V No clock required (Fully static memory) All input/output levels are TTL compatible Common input/output pins, with three output states Packages DIP 28 -pin (600 mil) plastic package : LC36256AL SOP 28-pin (450 mil) plastic package : LC36256AML SANYO: SOP28D SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN 22896HA (OT)/21593JN (OT) No. 4163-1/7 LC36256AL, AML-70/85/10/12 Pin Assignment Block Diagram Pin Functions A0 to A14 Address input WE Read/write control input OE Output enable input CE Chip enable input I/O1 to I/O8 Data input/output VCC, GND Power supply pins Functions Mode CE OE WE I/O Supply current Read cycle L L H Data output ICCA Write cycle L X L Data input ICCA Output disable L H H High impedance ICCA Nonselect H X X High impedance ICCS X : H or L No. 4163-2/7 LC36256AL, AML-70/85/10/12 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Maximum supply voltage VCC max Input pin voltage Conditions Ratings Unit 7.0 V VIN –0.5* to VCC+0.5 V I/O pin voltage VI/O –0.5* to VCC+0.5 V Allowable power dissipation Pd max LC36256AL 1.0 W LC36256AML 0.7 W Operating temperature range Topr 0 to +70 °C Storage temperature range Tstg –55 to +150 °C max Unit * –3.0 V when pulse width is less than 50 ns DC Recommended Operating Ranges at Ta = 0 to +70°C Parameter Symbol min Power supply voltage VCC 4.5* Input high level voltage VIH Input low level voltage VIL typ 5.0 5.5 V 2.2* VCC+0.3 V –0.3* +0.8 V * –3.0 V when pulse width is less than 50 ns DC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ±10% Parameter Symbol Conditions min typ* max Unit Input leakage current ILI VIN = 0 to VCC –0.5 +0.5 µA I/O leakage current ILO VCE = VIH or VOE = VIH, VI/O = 0 to VCC –0.5 +0.5 µA Output high level voltage VOH IOH = –1.0mA Output low level voltage VOL IOL = 2.1mA Operating supply current (DC) ICCA1 VCE ≤ 0.2V, VIN ≤ 0.2V or VIN ≥ VCC–0.2V ICCA2 VCE = VIL, II/O=0mA 2.4 min cycle Average operating supply current Standby supply current ICCA3 Duty = 100% I I/O = 0mA ICCS1 VCE ≥VCC-0.2V Access time VCE = VIH 0.4 V 1 5 mA 3 10 mA 70ns 30 50 85ns 25 50 100ns 23 50 120ns 20 50 0 to +70°C 25 0 to +40°C 5 25°C ICCS2 V 0.5 2 0.4 2 mA µA mA * Reference values at VCC = 5 V, Ta = 25°C No. 4163-3/7 LC36256AL, AML-70/85/10/12 Input/Output Capacitance at Ta = 25°C, f = 1 MHz Parameter Input/output capacitance Input capacitance Note: Symbol CI/O CIN Conditions VI/O = 0V VIN = 0V min typ max 8 6 Unit pF pF These parameters were obtained through sampling, and not full-lot measurement. AC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ±10% AC testing conditions Input pulse voltage level : 0.8 V, 2.2 V Input rise and fall time : 5 ns Input - output timing level : 1.5 V Output load : 1 TTL gate + CL = 100 pF (85 ns/100 ns/120 ns) 1 TTL gate + CL = 30 pF (70 ns) (including scope and jig capacitance) Read Cycle Parameter Read cycle time Address access time CE access time OE access time Output hold time CE output enable time OE output enable time OE output disable time OE output disable time Symbol tRC tAA tCA tOA tOH tCOE tOOE tCOD tOOD 20 10 5 0 0 LC36256AL, AML -85 max min 100 85 85 45 20 10 5 30 0 30 0 min 85 75 0 50 75 0 0 30 0 10 0 LC36256AL, AML -85 max min 100 80 0 60 80 0 0 35 0 10 25 0 -70 min 70 max min 85 70 70 35 20 10 5 0 0 30 30 -10 -12 max min 120 100 100 50 30 30 Unit max 120 120 60 20 10 5 0 0 30 30 ns ns ns ns ns ns ns ns ns Write Cycle Parameter Write cycle time Address valid to end of write Address setup time Write pulse width CE setup time Write recovery time (WE) Write recovery time (CE) Data setup time Data hold time WE output enable time WE output disable time -70 tWC tAW tAS tWP tCW tWR tWR1 tDS tDH tWOE tWOD min 70 65 0 50 65 0 0 30 0 10 0 max 25 -10 -12 max 25 min 120 100 0 70 100 0 0 40 0 10 0 Unit max 25 ns ns ns ns ns ns ns ns ns ns ns No. 4163-4/7 LC36256AL, AML-70/85/10/12 Timing Chart • Read Cycle (1): CE = OE = VIL, WE = VIH • Read Cycle (2): WE = VIH • Write Cycle (1): WE Control Note (6) No. 4163-5/7 LC36256AL, AML-70/85/10/12 • Write Cycle (2): CE Control Note (6) Notes (1) tCOD, tOOD, and tWOD are defined as the time at which the outputs becomes the high impedance state and are not referred to output voltage levels. (2) An external antiphase signal must not be applied when DOUT is in the output state. (3) tWP is the time interval that CE and WE are low-level and is defined as the interval from the falling of WE to the rising of CE or WE whichever is earlier. (4) tCW is the time interval that CE and WE are low-level and is defined as the time from the falling of CE to the rising of CE or WE whichever is earlier. (5) DOUT goes to the high-impedance state when either OE is high-level, CE is high-level, or WE is low-level. (6) When OE is high-level during the write cycle, DOUT goes to the high-impedance state. Data Retention Characteristics at Ta = 0 to +70°C Parameter Data retention supply voltage Symbol VDR ICCDR1 Data retention supply current ICCDR2 CE setup time tCDR CE hold time tR * Reference values at VCC = 5V, Ta = 25°C Conditions min VCE ≥ VCC–0.2V VCC = 3.0V, VCE ≥ 2.8V typ* 2.0 max 5.5 0 to +70°C 10 0 to +40°C 2 25°C 0.25 1 0.5 25 Unit V µA VCC = 2.0 to 5.5V, VCE ≥ VCC–0.2V µA 0 ns tRC** ns ** tRC = Read Cycle time Data Retention Waveform No. 4163-6/7 LC36256AL, AML-70/85/10/12 ■ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. ■ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ➀ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ➁ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. ■ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 1996. Specifications and information herein are subject to change without notice. PS No. 4163-7/7