LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.25Inch) LDD215/62-XX/S1 DATA SHEET DOC. NO : QW0905- LDD215/62-XX/S1 REV. : B DATE : 07- Dec. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD215/62-XX/S1 Page 1/7 Package Dimensions LDD215/62-XX/S1 LIGITEK 10.4 (0.409") 10 9 7 8 3.6 (0.142") 0.9 (0.035") 6 A F B1 C1 G E B2 6.4 (0.252") 12.4 (0.488") 0.8 C2 D 1 2 3 4 5 1.0 8.0 3.0±0.5 2.0x4=8.0 (0.315") 2.5±0.5 5.0±0.5 PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD215/62-XX/S1 Page 2/7 Internal Circuit Diagram LDD2152-XX/S1 9 B1 C1 A B2 C2 D E 10 1 6 7 4 3 2 F G 8 5 LDD2162-XX/S1 9 B1 C1 A B2 C2 D E 10 1 7 6 4 3 2 F G 8 5 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LDD215/62-XX/S1 Electrical Connection PIN NO.1 LDD2152-XX/S1 PIN NO.1 LDD2162-XX/S1 1 Anode C1 1 Cathode C1 2 Anode E 2 Cathode E 3 Anode D 3 Cathode D 4 Anode C2 4 Cathode C2 5 Anode G 5 Cathode G 6 Anode B2 6 Cathode B2 7 Anode A 7 Cathode A 8 Anode F 8 Cathode F 9 Common Cathode 9 Common Anode 10 Anode B1 10 Cathode B1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LDD215/62-XX/S1 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LDD2152-XX/S1 GaP LDD2162-XX/S1 Electrical λP (nm) 565 Green 30 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 2.6 0.05 0.08 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD215/62-XX/S1 Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD215/62-XX/S1 Page 6/7 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LDD215/62-XX/S1 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11