VISHAY LL4151-GS08

LL4151
VISHAY
Vishay Semiconductors
Fast Switching Diode
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the device 1N4151
Applications
Extreme fast switches
94 9371
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 30 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
LL4151
Type differentiation
VRRM = 75 V
Ordering code
Remarks
LL4151-GS18 or LL4151-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward current
Average forward current
VR = 0
Power dissipation
Symbol
Value
Unit
VRRM
75
V
VR
50
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
PV
500
mW
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Document Number 85559
Rev. 1.6, 06-Apr-04
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
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LL4151
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 50 V
IR
VR = 50 V, Tj = 150 °C
Min
Typ.
Max
0.88
1
V
50
nA
50
µA
IR
Unit
IR = 5 µA, tp/T = 0.01, tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0, f = 1MHz, VHF = 50 mV
CD
2
pF
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA
trr
4
ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2
ns
Breakdown voltage
75
V
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
3.0
Scattering Limit
C D - Diode Capacitance ( pF )
I R - Reverse Currentı ( µA )
100
10
1
0.1
V R = 50 V
0.01
0
40
80
120
160
f = 1 MHz
Tj = 25°C
2.0
1.5
1.0
0.5
0
200
Tj - Junction Temperature ( ° C )
94 9151
2.5
0.1
94 9153
Fig. 1 Reverse Current vs. Junction Temperature
1
100
10
V R - Reverse Voltage ( V )
Fig. 3 Diode Capacitance vs. Reverse Voltage
I F - Forward Current ( mA )
1000
Tj = 100 ° C
100
10
Tj = 25 ° C
1
0.1
0
0.4
94 9152
0.8
1.2
1.6
2.0
V F - Forward Voltage ( V )
Fig. 2 Forward Current vs. Forward Voltage
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Document Number 85559
Rev. 1.6, 06-Apr-04
LL4151
VISHAY
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.5 ± 0.1
(0.06 ± 0.004)
Cathode indification
3.5 ± 0.2 (0.14 ± 0.008)
0.47 max.
(0.02)
Mounting Pad Layout
2.50 (0.098) max
Glass case
Mini Melf / SOD 80
JEDEC DO 213 AA
2 (0.079) min
1.25 (0.049) min
technical drawings
according to DIN
specifications
5 (0.197) ref
96 12070
Document Number 85559
Rev. 1.6, 06-Apr-04
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LL4151
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85559
Rev. 1.6, 06-Apr-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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