NSC LM2648MTD

LM2648
Two-Phase, Synchronous Step-Down 3-Channel
Switching Regulator Controller
General Description
Features
The LM2648 consists of two current mode and two voltage
mode synchronous buck regulator controllers providing 3
outputs at a switching frequency of 300kHz.
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Each pair of switching regulator controllers operate 180˚ out
of phase. This feature reduces the input ripple RMS current,
thereby significantly reducing the required input capacitance.
The two current mode regulator outputs operate as a dualphase, single output regulator for high current applications.
Current-mode feedback control on Channel 3 assures superior line and load regulation and wide loop bandwidth assures excellent response to fast load transients. Channels 1
and 2 employ voltage-mode feedback control.
The LM2648 features analog soft-start circuitry that is independent of the output load and output capacitance. This
makes the soft-start behavior more predictable than traditional soft-start circuits. Sequential startup is built in and
requires a single capacitor to set the timing.
The LM2648 has over-voltage protection and under-voltage
protection for all outputs. Two additional comparator inputs
(analog and logic level) are provided to shut down the IC for
any user defined protection. The FAULT_DELAY pin allows
delayed shut off time for the IC during an under-voltage or
PROT-IN2 fault. The LM2648 also features an adjustable
UVLO feature.
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Four synchronous buck regulators
Channel 3: Two-phase, current mode controller
4.5V to 18V input range
Built in sequential startup
Channels 1 and 2: Independent, 180˚ out of phase
voltage mode controllers
Single soft start for channels 1 and 2
Adjustable cycle-by-cycle current limit for each channel
Adjustable reference current
Adjustable input under-voltage lockout
Output over-voltage latch protection
Output under-voltage protection with delay
Two comparator inputs for user defined protection - one
with delay
Thermal shutdown
Self-discharge of output capacitors when the regulator is
off
TSSOP package
Applications
n Embedded Computer Systems
n Interactive Games
n Set-top Boxes/Home Gateways
Block Diagram
20059690
© 2004 National Semiconductor Corporation
DS200596
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LM2648 Two-Phase, Synchronous Step-Down 3-Channel Switching Regulator Controller
December 2004
LM2648
Connection Diagram
TOP VIEW
20059602
56-Lead TSSOP (MTD)
Order Number LM2648MTD
See NS Package Number MTD56
COMP1 (Pin 5): Compensation pin for Channel 1. This is the
output of the internal error amplifier. The compensation network should be connected between this pin and the feedback pin, FB1 (PIN 6).
FB1 (Pin 6): Feedback input for channel 1. Connect to Vout
through a voltage divider to set the channel 1 output voltage.
TEST (Pin 7): Connect to SGND.
COMP3 (Pin 8): Compensation pin for Channel 3. This is the
output of the internal transconductance amplifier. The compensation network should be connected between this pin
and SGND.
FB3 (Pin 9): Feedback input for channel 3. Connect to Vout
through a voltage divider to set the Channel 3 output voltage.
NC (Pin 10): All NC pins should be connected to SGND.
RILIM (Pin 11): Connect a resistor from this pin to SGND to
set the internal ILIM reference current.
ON/UVLO (Pin 12): This is a dual function pin providing
thresholds for user adjustable UVLO and device shutdown.
Pin Descriptions
SW1 (Pin 1): Switch-node connection for Channel 1, which
is connected to the source of the top MOSFET of Channel 1.
It serves as the negative supply rail for the top-side gate
drive, HDRV1.
RSNS1 (Pin 2): The negative (-) Kelvin sense for the internal
current limit comparator of Channel 1. Connect this pin to the
low side of the current sense resistor that is placed between
VIN and the drain of the top MOSFET. Always use a separate trace to connect this pin.
ILIM1 (Pin 3): Current limit threshold setting for Channel 1. It
sinks a variable current adjusted by RILIM (Pin11), which is
converted to a voltage through a resistor connected from this
pin to the top of the current sense resistor. The voltage
across the resistor is compared with the voltage across the
external current sense resistor to determine if an overcurrent condition has occurred on Channel 1.
NC (Pin 4): All NC pins should be connected to SGND.
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2
LDRV2 (Pin 32): Low-side gate-drive output for Channel 2.
PGND2 (Pin 33): The power ground connection for channel
2. Connect to the ground rail of the system.
ILIM3b (Pin 34): Current limit threshold setting for Channel
3b. See ILIM1 (Pin 3).
(Continued)
Thresholds are 1.2V and 1.9V typical for shutdown and
UVLO respectively. Connect to Vin through a voltage divider
to set the external UVLO threshold.
VLIN5 (Pin 13): The output of the internal 5V LDO regulator
derived from VIN. It supplies the internal bias for the chip and
supplies the bootstrap circuitry for gate drive. Bypass this pin
to signal ground with a minimum of 4.7uF capacitor. VLIN5
should not be used as an external voltage supply.
KS3b (Pin 35): The positive (+) Kelvin sense for the internal
current sense amplifier of Channel 3b. Use a separate trace
to connect this pin to the current sense point. It should be
connected to VIN as close as possible to the node of the
current sense resistor.
RSNS3b (Pin 36): The negative (-) Kelvin sense for the
internal current sense amplifier of Channel 3b. See RSNS1
(Pin 2).
SW3b (Pin 37): Switch-node connection for Channel 3b.
See SW1 (Pin1).
HDRV3b (Pin 38): Top-side gate-drive output for Channel
3b. See HDRV2 (Pin 29).
NC (Pin 14): All NC pins should be connected to SGND.
SGND (Pin 15): The ground connection for the signal-level
circuitry. It should be connected to the ground rail of the
system.
NC (Pin 16): All NC pins should be connected to SGND.
SS1/2 (Pin 17): This pin is the soft start control for channels
1 and 2. Connect a capacitor from this pin to SGND to
control the ramp rate of the output voltage during startup.
CBOOT3b (Pin 39): Bootstrap capacitor connection. It
serves as the positive supply rail for the Channel 3b top-side
gate drive. See CBOOT2 (Pin 30).
VDD3b (Pin 40): The supply rail for the Channel 3b low-side
gate drive. Tie all VDDx pins together.
LDRV3b (Pin 41): Low-side gate-drive output for Channel
3b.
PGND3 (Pin 42): The power ground connection for channel
3. Connect to the ground rail of the system.
VIN (Pin 43): The power input pin for the chip. Connect to
the positive (+) input rail of the system. Bypass to PGND with
a 1uF capacitor.
LDRV3a (Pin 44): Low-side gate-drive output for Channel
3a.
VDD3a (Pin 45): The supply rail for the Channel 3a low-side
gate drive. Tie all VDDx pins together.
CBOOT3a (Pin 46): Bootstrap capacitor connection. It
serves as the positive supply rail for the Channel 3a top-side
gate drive. See CBOOT2 (Pin 30).
HDRV3a (Pin 47): Top-side gate-drive output for Channel
3a. See HDRV2 (Pin 29).
SW3a (Pin 48): Switch-node connection for Channel 3a.
See SW1 (Pin1).
SS3 (Pin 18): The soft start pin for channel 3. See Pin 17
(SS1/2).
TD12-3 (Pin 19): Sequential start timing pin. A capacitor
from this pin to ground sets the delay time between channel
1 and 2 and channel 3 entering softstart.
FAULT_DELAY (Pin 20): A capacitor from this pin to ground
sets the delay time for UVP and PROT-IN2 latch off. The
capacitor is charged from a 5uA current source. When the
FAULT_DELAY capacitor charges to 2V (typical), the system
immediately latches off. Connecting this pin to ground will
disable the UVP and PROT-IN2 functions.
PROT_IN1 (Pin 21): A comparator input that latches off all
channels simultaneously when the applied voltage is above
1.239V (typical) voltage level.
PROT_IN2 (Pin 22): A TTL/CMOS compatible input that
activates FAULT_DELAY when the applied voltage is above
a 1.45V typical threshold.
FB2 (Pin 23): Feedback input for channel 2. Connect to Vout
through a voltage divider to set the Channel 2 output voltage.
COMP2 (Pin 24): Compensation pin for Channel 2. This is
the output of the internal error amplifier. The compensation
network should be connected between this pin and the feedback pin FB2 (Pin 23).
RSNS3a (Pin 49): The negative (-) Kelvin sense for the
internal current sense amplifier of Channel 3a. See RSNS1
(Pin 2).
KS3a (Pin 50): The positive (+) Kelvin sense for the internal
current sense amplifier of Channel 3a. See KS3b (Pin 35).
ILIM3a (Pin 51): Current limit threshold setting for Channel
3a. See ILIM1 (Pin 3).
PGND1 (Pin 52): The power ground connection for channel
1. Connect to the ground rail of the system.
LDRV1 (Pin 53): Low-side gate-drive output for Channel 1.
VDD1 (Pin 54): The supply rail for the Channel 1 low-side
gate drive. Tie all VDDx pins together.
CBOOT1 (Pin 55): Bootstrap capacitor connection. It serves
as the positive supply rail for the Channel 1 top-side gate
drive. See CBOOT2 (Pin 30).
HDRV1 (Pin 56): Top-side gate-drive output for Channel 1.
See HDRV2 (Pin 29).
NC (Pin 25): All NC pins should be connected to SGND.
ILIM2 (Pin 26): Current limit threshold setting for Channel 2.
See ILIM1 (Pin 3).
RSNS2 (Pin 27): The negative (-) Kelvin sense for the
internal current limit comparator of Channel 2. See RSNS1
(Pin 2).
SW2 (Pin 28): Switch-node connection for Channel 2. See
SW1 (Pin1).
HDRV2 (Pin 29): Top-side gate-drive output for Channel 2.
HDRV is a floating drive output that rides on the corresponding SW node voltage.
CBOOT2 (Pin 30): Bootstrap capacitor connection. It serves
as the positive supply rail for the Channel 2 top-side gate
drive. Connect this pin to VDD2 (Pin 31) through a diode,
and connect the low side of the bootstrap capacitor to SW2
(Pin28).
VDD2 (Pin 31): The supply rail for the Channel 2 low-side
gate drive. Connected to VLIN5 (Pin 13) through a 4.7ohm
resistor and bypassed to PGND with a ceramic capacitor of
at least 1uF. Tie all VDDx pins together.
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LM2648
Pin Descriptions
LM2648
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltages from the indicated pins to SGND/PGND:
VIN, ILIMx, KS3a, KS3b
−0.3V to 20V
SWx, RSNSx
−0.3V to (VIN +
0.3)V
FB1, FB2, FB3x, VDDx,ON/UVLO
COMPx, FAULT_DELAY, SSx
−0.3V to 7V
LDRV1, LDRV2, LDRV3x
0.3V
Power Dissipation (TA = 25˚C),
(Note 2)
1.3W
Ambient Storage Temperature
Range
−65˚C to +150˚C
Soldering Dwell Time, Temperature
(Note 3)
Infrared
Vapor Phase
10-20sec, 240˚C
75sec, 219˚C
ESD Rating (Note 4)
−0.3V to (VLIN5 +
0.3)V
CBOOT1 to SW1, CBOOT2 to SW2,
CBOOT3x to SW3x
HDRV1 to CBOOT1, HDRV2 to
CBOOT2, HDRV3x to CBOOT3x
2kV
Operating Ratings(Note 1)
−0.3V to 7V
−0.3V to
(VDD+0.3)V
HDRV1 to SW1, HDRV2 to SW2,
HDRV3x to SW3x
VIN (VIN and VLIN5 separate)
5.5V to 18V
VIN (VIN tied to VLIN5)
4.5V to 5.5V
Junction Temperature
0˚C to +125˚C
−0.3V
Electrical Characteristics
Unless otherwise specified, VIN = 12V, SGND = PGND = 0V, VLIN5 = VDD1 = VDD2 = VDD3x. Limits appearing in boldface
type apply over the full operating junction temperature range. Specifications appearing in plain type are measured using low
duty cycle pulse testing with TA = 25˚C (Note 5), (Note 6). Min/Max limits are guaranteed by design, test, or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
System
∆VOUT/VOUT
Load Regulation
VIN = 12V, Vcomp1, 2 = 1V to 3V,
Vcomp3 = 0.5V to 1.5V
.04
%
∆VOUT/VOUT
Line Regulation
5.5V ≤ VIN ≤ 18V, Vcompx =1.25V
.04
%
VFB1, VFB2
Feedback Voltage
5.5V ≤ VIN ≤ 18V
1.218
1.239
1.260
V
VFB3
Feedback Voltage
5.5V ≤ VIN ≤ 18V
1.220
1.241
1.262
V
IVIN
Input Supply Current
VON/UVLO > 2.25V (not switching)
5.5V ≤ VIN ≤ 18V
1.66
2.2
mA
45
120
µA
5.0
5.35
V
0
± 7.0
mV
20
21.8
µA
Standby
1.5V < VON/UVLO < 1.7V
Shutdown (Note 7)
VON/UVLO = 0V
VLIN5
VLIN5 Output Voltage
IVLIN5 = 0 to 50mA,
7V ≤ VIN ≤ 18V
4.65
Current Limit
VClos1, 2, 3
Current Limit
Comparator Offset
(VILIMX-VRSNSX)
VCLx1, 2, 3
Current Limit Sink
Current
VRILIM
ILIM Reference Voltage
RILIM = 1.238/20µA
18.2
1.238
V
Soft Start
Iss1/2_SC
Soft-Start Source
Current
Vss = 1V
Iss3_SC
Soft-Start Source
Current
Vss = 1V
Iss1/2_SK
Soft-Start Sink Current
Vss1/2,
3
Iss3_SK
Soft-Start Sink Current
Vss1/2,
3
ISC_TD12-3
Delay Timer Source
Current
VTD = 1.5V
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0.5
2.05
3.8
µA
0.5
2.05
3.8
µA
= 1V, ON/UVLO = 1.6V
2
4.9
9
µA
= 1V, ON/UVLO = 1.6V
2
5.0
9
µA
6.2
9.8
13.2
µA
4
(Continued)
Unless otherwise specified, VIN = 12V, SGND = PGND = 0V, VLIN5 = VDD1 = VDD2 = VDD3x. Limits appearing in boldface
type apply over the full operating junction temperature range. Specifications appearing in plain type are measured using low
duty cycle pulse testing with TA = 25˚C (Note 5), (Note 6). Min/Max limits are guaranteed by design, test, or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
192
274
356
µA
1.70
1.94
2.20
V
Soft-Start Source
Current Ratio
-13%
1.0
+13%
A/A
Soft-Start to Delay Timer
Source Current Ratio
-32%
0.209
+32%
A/A
0.95
1.2
1.44
V
ISK_TD12-3
Delay Timer Sink
Current
VTD = 0.4V
VTD12-3
Delay Timer Threshold
Voltage
Rising
Iss1/2_sc/
Iss3_sc
Iss1/2_sc/
Isc_TD12-3
Shutdown
VStandby
Standby Threshold
(ON/UVLO pin)
Rising
Shutdown to Standby
Hysteresis
VON
ON Threshold
(ON/UVLO pin)
149
Rising
Standby to On
1.75
Hysteresis
1.98
mV
2.20
205
SW_ R1, 2
SW1, 2 ON Resistance
VSW1 = VSW2 = 0.4V
SW_R3a, 3b
SW3a, 3b ON
Resistance
VSW3a = VSW3b = 0.4V
VSW_dis
SW3a Quick Discharge
Threshold at FB3 (falling
edge)
LDRV3a = High
V
mV
440
570
700
Ω
200
249
310
Ω
.81
V
Protection
ISC_FAULTDELAY FAULT_DELAY source
current
FAULT_DELAY = 2.0V
ISK_FAULTDELAY FAULT_DELAY sink
current
FAULT_DELAY = 0.4V
VFAULT_DELAY
FAULT_DELAY
threshold Voltage
Rising
VUVP
FB1, 2, 3 Under Voltage
Protection Latch
Threshold
As a percentage of nominal output
voltage (falling edge)
3.54
4.7
5.9
0.27
µA
mA
1.75
1.96
2.20
V
75
80.6
86
%
Hysteresis
4
%
FB1, 2, 3 Over-voltage
Shutdown Latch
Threshold
As a percentage of nominal output
voltage (rising edge)
VUVLO_INT
VLIN5 Under Voltage
Lockout Threshold
Rising
VPROT-IN1
Analog protection
threshold
1.19
1.239
1.4
V
VPROT-IN2
Logic protection
threshold
0.8
1.48
2
V
Isk_prot-in2
PROT-IN2 sink current
VOVP
106
Hysteresis
112
119
%
4.2
V
8
%
2
µA
10
nA
0.5
A
0.8
A
Gate Drive
ICBOOT
CBOOTx Leakage
Current
VCBOOTX = 7V
ISC_DRV
HDRVx and LDRVx
Source Current
HDRV = LDRV = 2.5V
Isk_HDRV
HDRVx Sink Current
HDRVX = 2.5V
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LM2648
Electrical Characteristics
LM2648
Electrical Characteristics
(Continued)
Unless otherwise specified, VIN = 12V, SGND = PGND = 0V, VLIN5 = VDD1 = VDD2 = VDD3x. Limits appearing in boldface
type apply over the full operating junction temperature range. Specifications appearing in plain type are measured using low
duty cycle pulse testing with TA = 25˚C (Note 5), (Note 6). Min/Max limits are guaranteed by design, test, or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Isk_LDRV
LDRVx Sink Current
LDRVX = 2.5V
1.1
A
RHDRV
HDRVx Source
On-Resistance
VCBOOTx = 5V,
VSWx = 0V
3.1
Ω
1.5
Ω
3.1
Ω
1.1
Ω
HDRVx Sink
On-Resistance
RLDRV
LDRVx Source
On-Resistance
VVDDx = 5V
LDRVx Sink
On-Resistance
Oscillator
Fosc
Oscillator Frequency
Don_max1, 2
Ch. 1, 2 Maximum
On-Duty Cycle
Don_max3
Ch. 3a, 3b Maximum
On-Duty Cycle
Ton_min
Ch.3 Minimum On-Time
SSOT_delta
HDRVx Delta On Time
HDRV1 and 2 ; HDRV3a and b
IFB1, 2
Ch. 1, 2 Feedback Input
Bias Current
VFB1,
Icomp1, 2_SC
COMP Output Source
Current
VCOMP1,
2
= 2.6V
Icomp1, 2_SK
COMP Output Sink
Current
VCOMP1,
2
= 1.2V
GBW1, 2
Unity Gain Bandwidth
G1, G2
Error amplifier DC Gain
80
dB
SR1, 2
Slew Rate
4.5
V/µs
VFB1 = VFB2 = 1V, Measured at pins
HDRV1 and HDRV2
260
300
340
91
93
%
91
94
%
166
kHz
ns
150
ns
150
nA
Error Amplifier
2_
= 1V
43
0.5
.21
1.1
mA
0.4
mA
8.5
MHz
VCLAMPH1, 2
Error Amp High Clamp
3.1
V
VCLAMPL1, 2
Error Amp Low Clamp
1
V
IFB3
Ch 3 Feedback Input
Bias Current
VFB3 = 1.5V
ICOMP3_SC
COMP Output Source
Current
Vcomp3 = 1.5V
ICOMP3_SK
COMP Output Sink
Current
Vcomp3 = 0.5V
gm3
Transconductance
GISNS3
Ch.3 Current Sense
Amplifier Gain
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74
Vcomp3 = 1.25V
nA
27
115
µA
27
111
µA
650
µmho
4.2
6
± 200
5.4
6.8
(Continued)
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Range indicates conditions for which the device is
intended to be functional, but does not guarantee specfic performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions. Some performance characteristics may degrade when the device is not operated under the listed
test conditions.
Note 2: The maximum allowable power dissipation is calculated by using PDMAX = (TJMAX - TA)/θJA, where TJMAX is the maximum junction temperature, TA is the
ambient temperature and θJA is the junction-to-ambient thermal resistance of the specified package. The 1.3W rating results from using 125˚C, 25˚C, and 75˚C/W
for TJMAX, TA, and θJA respectively. A θJA of 75˚C/W represents the worst-case condition of no heat sinking of the 56-pin TSSOP. A thermal shutdown will occur if
the temperature exceeds the maximum junction temperature of the device. θJC = 26˚C/W.
Note 3: For detailed information on soldering plastic small-outline packages, refer to the Packaging Databook available from National Semiconductor Corporation.
Note 4: For testing purposes, ESD was applied using the human-body model, a 100pF capacitor discharged through a 1.5kΩ resistor.
Note 5: A typical is the center of characterization data measured with low duty cycle pulse tsting at TA = 25˚C. Typicals are not guaranteed.
Note 6: All limits are guaranteed. All electrical characteristics having room-temperature limits are tested during production with TA = TJ = 25˚C. All hot and cold limits
are guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control.
Note 7: All switching controllers are off. The linear regulator VLIN5 remains on.
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LM2648
Electrical Characteristics
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8
FIGURE 1. Typical Application Circuit
20059604
LM2648
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Block Diagrams
20059605
LM2648
9
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Block Diagrams
(Continued)
20059675
LM2648
LM2648
Typical Performance Characteristics
Efficiency vs Load Current
Ch.3 = 1.9V, VIN = 12V, Ch.1/2/3: ON
Efficiency vs Load Current
Ch.1 = 5V, Ch.2 = 3.3V, VIN = 12V, Ch.1/2/3: ON
20059664
20059665
FB Voltage vs Temperature
Input Supply Current vs Temp. Shutdown Mode
20059667
20059666
Input Supply Current vs VIN Shutdown Mode
FB3 Quick Discharge Threshold Voltage vs Temperature
20059668
20059669
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LM2648
Typical Performance Characteristics
(Continued)
TD1 2-3 Source Current vs Temperature
TD1 2-3 Threshold Voltage vs Temperature
20059670
20059671
Ch.1 Load Transient Response
5VOUT, 12VIN (20µsec/div)
VIN - VLIN5 Saturation Voltage vs Temperature
20059680
20059673
Ch.3 Load Transient Response
1.9VOUT, 12VIN (20µsec/div)
Ch.2 Load Transient Response
3.3VOUT, 12VIN (20µsec/div)
20059681
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20059682
12
LM2648
Typical Performance Characteristics
(Continued)
Prot-in1 Shutdown (10ms/div)
Prot-in2 Startup (40ms/div)
20059684
20059683
Softstart 1 and 2 (1ms/div)
Ch.3 Sequential Startup (20ms/div)
20059685
20059686
Ch.3 Softstart (10ms/div)
Overcurrent UVP Shutdown (100ms/div)
20059688
20059687
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LM2648
Typical Performance Characteristics
(Continued)
Operating Frequency vs Temperature
Ch.3 Error Amplifier Gain vs Temperature
20059679
20059678
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14
below 80mV (typical). During soft start, over-voltage protection, prot-in1, prot-in2, under-voltage protection and current
limit remain in effect.
ON and UVLO
The ON/UVLO pin provides a dual threshold shutdown and
under voltage lock out function. When this pin is pulled
above 1.2V, the internal bias circuitry starts up and the
device enters standby mode. The ON/UVLO pin has 149mV
(typical) of hysteresis. This pin also provides a user programmable UVLO function. The lock out threshold at this pin is
1.98V with 200mV hysteresis (typical). Above this threshold,
SS1/2 begins to source current. Connecting this pin through
a voltage divider to VIN allows the user to set a secondary
UVLO threshold above the internal UVLO level.
SEQUENTIAL STARTUP
Channel 3 is designed to start only after the delay pin
(TD12-3) has reached its threshold. When channels 1 and 2
begin softstart, TD12-3 begins sourcing current (10µA typical). A capacitor from TD12-3 to SGND is used to set the
delay time for channel 3 turn-on. Once TD12-3 has reached
its threshold, SS3 begins sourcing current and the channel 3
output begins ramping up.
The internal UVLO threshold, which is sensed via the VLIN5
internal LDO, is 4.2V (typical). Below either UVLO threshold,
both HDRVx and LDRVx will be turned off and the internal
MOSFETs will be turned on to discharge the output capacitors through the SWx pins. As the input voltage increases
again above 4.2V, UVLO will be de-activated, and the device
will restart again from the soft start phase. If the voltage at
VLIN5 remains below 4.5V, but above the 4.2V UVLO
threshold, the device cannot be guaranteed to operate within
specification.
If the input voltage is between 4.2V and 5.2V, the VLIN5 pin
will not regulate, but will follow approximately 200mV below
the input voltage. VLIN5 can be directly connected to the
ON/UVLO pin to disable the external UVLO function. This is
especially useful if the input voltage range will cause ON/
UVLO to exceed its absolute maximum voltage rating (7V
typ.).
OVER VOLTAGE PROTECTION (OVP)
If the output voltage on any channel rises above 110%
(typical) of nominal, over voltage protection activates and all
channels will latch off. There is a 10 µs delay between an
over voltage event on channel 1 or 2 and latch off. When the
OVP latch is set, the high side FET drivers, HDRVx, are
immediately turned off and the low side FET drivers, LDRVx,
are turned on to discharge the output capacitors through the
inductors. To reset the OVP latch, either the input voltage
must be cycled, or the device must be shut down at the
ON/UVLO pin.
UNDER VOLTAGE PROTECTION (UVP)
If the output voltage on any channel falls below 80% (typical)
of nominal, under voltage protection activates. An undervoltage event will shut off the FAULT_DELAY MOSFET,
which will allow the FAULT_DELAY capacitor to charge at
5µA (typical). When the capacitor charges to the FAULT_DELAY threshold (2V typical) all channels will latch off. FAULT_DELAY will then be disabled and discharged to 0V. When
the UVP latch is set, both the high side and low side FET
drivers will be turned off, and the output capacitors will be
discharged through the internal MOSFET. If the fault condition is removed before the FAULT_DELAY threshold is
reached, the pin will be discharged. To reset the UVP latch,
either the input voltage must be cycled, or the device must
be shut down. The UVP feature can be disabled by grounding the FAULT_DELAY pin.
NOTE: The FAULT_DELAY time must be greater than Tss1/
2+Tss3+TD12-3. If it is not, the device will latch off due to an
under voltage condition during startup. The FAULT_DELAY
function becomes immediately active above the UVLO
threshold, and is therefore active during soft start.
SOFT START
The soft start pins, SS1/2 and SS3, must each be connected
to SGND through a capacitor. If the SS capacitor is too small,
the duty cycle may increase too rapidly, causing the device
to latch off due to output voltage overshoot above the OVP
threshold. This becomes more likely in applications requiring
low output voltage, high input voltage and light load. A typical
value of approximately 10nF is recommended.
The size of the soft start capacitors controls the ramp up rate
of the output voltages. As the input voltage rises or the
ON/UVLO pin rises above 1.9V, an internal 2µA current
charges the soft start capacitor. During soft start, the error
amplifier output voltage is clamped and the duty cycle is
controlled only by the soft start voltage. As the SSx pin
voltage ramps up, the duty cycle increases proportional to
the soft start ramp, causing the output voltage to ramp up.
The rate at which the duty cycle increases depends on the
capacitance of the soft start capacitor. The higher the capacitance, the slower the output voltage ramps up. When the
corresponding output voltage exceeds 98% (typical) of the
target voltage, the regulator switches from soft start to normal operating mode. At this time, the error amplifier clamp
releases and feedback control takes over. The soft start
capacitor value can be calculated with the following equation:
COMPARATOR INPUT PROTECTION
The LM2648 features two PROT-IN pins, which can be used
for any user defined protection scheme. When PROT-IN1
rises above 1.239V (typical), this sets the PROT-IN1 latch
and shuts down the device. PROT-IN2 has a TTL/CMOS
compatible input threshold with hysteresis. This pin also
sinks a constant 2 µA (typical) current. A PROT-IN2 fault will
activate FAULT_DELAY (see Under Voltage Protection) and
can thus be deactivated by connecting FAULT_DELAY to
SGND.
The protection latches will turn off both the high and low side
FET drivers and will turn on the internal MOSFETs to discharge the output capacitors through the switch nodes. Like
the UVP and OVP latches, both PROT-IN latches can only
be reset by shutting down the device, or by cycling the input
voltage.
Where t is the desired ramp-up time for the output voltage
and Vnom is the target output voltage. Vpeak equals 2V for
channels 1 and 2 and 1V for channel 3. When a fault occurs,
the SSx pins are pulled low by a 5µA current sink. The device
will not restart until the fault is reset and both SSx pins are
15
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LM2648
Operation Descriptions
LM2648
Operation Descriptions
CURRENT LIMITING
(Continued)
The peak current limit is set with an external resistor connected between the ILIMx pin and the top of the current
sense resistor. An adjustable internal current sink on the
ILIMx pin produces a voltage across the ILIM resistor to set
the current limit threshold. This voltage is compared with the
current sense voltage. A 10nF capacitor across the resistor
is required to filter unwanted noise that could improperly trip
the current limit comparator.
ACTIVE OUTPUT DISCHARGE
Each channel has an embedded MOSFET with the drain
connected to the SWx pin to provide a smooth controlled
shutdown ramp. Each MOSFET will discharge the output
capacitor of its channel if the device enters a fault state
caused by one of the following conditions:
1. UVP or Prot-in2
2.
3.
UVLO (Internal or External)
Thermal shut-down (TSD)
4. Prot-in1
The MOSFETS provide 500Ω of discharge resistivity for
channels 1 and 2 and 200Ω for channel 3.
Channel 3 has a secondary quick discharge feature. When
the channel 3 output voltage falls below 65% of nominal,
LDRV3a is turned on (LDRV3b remains off). This provides a
faster discharge for the second half of the channel 3 shutdown process.
CURRENT SENSING
As shown in Figure 2, the KSx and RSNSx pins are the
inputs of the current sense amplifier for channel 3. Current
sensing is accomplished by sensing the voltage across a
current sense resistor connected from VIN to the drain of the
top FET. Keeping the differential current-sense voltage below 200mV ensures linear operation of the current sense
amplifier. Therefore, the current sense resistor must be small
enough so that the current sense voltage does not exceed
200mV when the top FET is on. There is a leading edge
blanking circuit that forces the top FET on for at least 166ns.
Beyond this minimum on time, the output of the PWM comparator is used to turn off the top FET. Additionally, a minimum voltage of at least 50mV across the sense resistor is
recommended to ensure a high SNR at the current sense
amplifier.
Assuming a maximum sense voltage of 200mV, the current
sense resistor can be calculated as follows:
20059610
FIGURE 2. Ch.3 Current Sense and Current Limit
Current limit is activated when the inductor current is high
enough to cause the voltage across the current sense resistor to exceed the voltage across the current limit resistor.
This will toggle the comparator, which turns off the top FET
immediately. The current limit comparator is disabled when
the top FET is turned off and during the leading edge blanking time. The equation for current limit resistor, Rlim, is as
follows:
Where Imax is the load current at which the current limit
comparator will be tripped, and IREF is the reference sink
current (20µA typical). This calculated Rlim value guarantees
that the minimum current limit will not be less than Imax. It is
recommended that a 1% tolerance resistor be used.
where Imax is the maximum expected load current, including
overload multiplier (ie:120%), and Irip is the inductor ripple
current (See Inductor Selection below). The above equation
gives the maximum recommended value for the sense resistor, Rsns. Conduction losses will increase with Rsns, thus
lowering efficiency.
To ensure accurate current sensing, special attention in
board layout is required. The KSx and RSNSx pins require
separate traces to form a Kelvin connection to the corresponding current sense nodes.
Current sensing on channels 1 and 2 is used only to monitor
the current limit. Current is sensed identical to channel 3,
except that it does not require a KS pin and there is no
blanking time. As with channel 3, RSNSx is connected to the
bottom side of the current sense resistor. The top side of the
current sense resistor connects to both VIN and the current
limit resistor. Both KSx and RSNSx must be connected with
separate traces to ensure accurate current limiting.
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REFERENCE CURRENT SETTING
The ILIMx current sink value can be adjusted using the
RILIM pin. The RILIM pin is connected through a resistor to
SGND to set the reference current at the current limit pins
(ILIMx). The resistor value can be determined using the
following equation:
Where IREF is the desired reference current. Generally, a
default value of 61.9kΩ is used, which provides the recommended reference current of 20µA. Once an initial value is
selected, RIREF can be adjusted to precisely trim the current
limit setting on all three channels.
16
OUTPUT VOLTAGE SETTING
(Continued)
The output voltage for each channel is set by the ratio of a
voltage divider as shown in Figure 4. The resistor values can
be determined by the following equation:
Channel 3 Dual Phase Operation
Channel 3 consists of two 180˚ out of phase converters
operating in parallel to provide a single output voltage. In
high current demand applications, current sharing between
the two switching channels greatly reduces the stress and
heat on the output stage components while lowering input
ripple current. The sum of inductor ripple currents is also
reduced which results in lowered output ripple voltage.
When designing channel 3, simply design each switcher (3a
and 3b) to supply half of the load current. Accurate current
sensing is critical to ensure equal current sharing.
Since each switcher has separate current sense and limit
pins, channel 3 can also be operated in single phase mode.
This requires that either channel 3a or 3b remains unused.
To operate channel 3 as a single phase controller, make the
following pin connections to the unused channel. Connect
ILIM3x and KS3x to VIN, RSNS3x and SW3x to GND, leave
HDRV3x and LDRV3x open, and connect CBOOT3X to
VDD3X.
20059611
FIGURE 4. Output Voltage Setting
SWITCHING NOISE REDUCTION
Power MOSFETs are very fast switching devices. In synchronous rectifier converters, the rapid increase of drain
current in the top FET coupled with parasitic inductance will
generate unwanted Ldi/dt noise spikes at the source node of
the FET (SWx node) and also at the VIN node. The magnitude of this noise will increase as the output current increases. This parasitic spike noise may turn into electromagnetic interference (EMI), and can also cause problems in
device performance. Therefore, it must be suppressed using
one of the following methods.
It is strongly recommended to add R-C filters to the current
sense amplifier inputs of channel 3 as shown in Figure 2.
This will reduce the susceptibility to switching noise, especially during heavy load transients and short on-time conditions. The filter components should be connected as close
as possible to the IC.
As shown in Figure 3, adding a resistor in series with the
SWx pin will slow down the gate drive (HDRVx), thus slowing
the rise and fall time of the top FET, yielding a longer drain
current transition time.
Usually a 3.3Ω to 4.7Ω resistor is sufficient to suppress the
noise. Top FET switching losses will increase with higher
resistance values.
Small resistors (1-5 ohms) can also be placed in series with
the HDRVx pin or the CBOOTx pin to effectively reduce
switch node ringing. A CBOOT resistor will slow the rise time
of the FET, whereas a resistor at HDRV will reduce both rise
and fall times.
Although increasing the value of R1 and R2 will increase
efficiency, this will also decrease accuracy. In the case of
channels 1 and 2, increasing R2 will decrease loop gain,
resulting in degraded transient response. The output voltage
is limited by both maximum duty cycle and minimum on time.
It is recommended that the nominal output voltage does not
exceed 1V less than the minimum input voltage. In general,
the minimum possible output voltage is approximately 1.3V.
However, at maximum input voltage the minimum output will
be determined by the minimum on time (166ns typ.) and may
be as high as 1.35V for an input voltage of 18V.
For input voltages below 5.5V, VLIN5 should be connected
to VIN through a small resistor (approximately 4.7Ω). This
will ensure that VLIN5 does not fall below the UVLO threshold.
LAYOUT RECOMMENDATIONS
To ensure proper operation, a few key layout guidelines
should be followed.
The PGND and SGND pins and nodes should be connected
to isolated ground planes which connect at a single point.
This will help to keep the signal ground and thus the COMP
and FB pins isolated from switching noise.
All current sensing and limiting pins should be Kelvin connected directly to the current sense points. This will help
ensure accurate current sensing and limiting.
All FB voltage dividers should be placed close to the device,
and the FB traces should be kept away from sources of
noise.
Input capacitors should be connected as close as possible to
the top of the current sense resistors.
Component Selection
INPUT CAPACITOR SELECTION
The fact that the switching channels of the LM2648 are 180˚
out of phase will reduce the RMS value of the ripple current
seen by the input capacitors. This will help extend input
capacitor life span and result in a more efficient system.
Input capacitors must be selected that can handle both the
maximum ripple RMS current at highest ambient tempera-
20059609
FIGURE 3. SW Series Resistor
17
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LM2648
Operation Descriptions
LM2648
Component Selection
The maximum allowed total combined ESR is:
(Continued)
ture as well as the maximum input voltage. Input RMS ripple
current can be approximately calculated with the equation
below:
Example: ∆Vc_s = 160mV, ∆Ic_s = 3A. Then Re_max =
53.3mΩ.
Maximum ESR criterion can be used when the associated
capacitance is high enough, otherwise more capacitors than
the number determined by this criterion should be used in
parallel.
Where D1 is the duty cycle of channel 1 or 3a, whichever is
larger, and D2 is the duty cycle of channel 2 or 3b, whichever
is larger. I1 and I2 are the sum of the load currents of
channels 1 nd 3a and of channels 2 and 3b respectively.
Additionally, the input capacitor should always be placed as
close as possible to the current sense resistor.
MINIMUM CAPACITANCE CALCULATION
In a switch mode power supply, the minimum output capacitance is typically dictated by the load transient requirement.
If there is not enough capacitance, the output voltage excursion will exceed the maximum allowed value even if the
maximum ESR requirement is met. The worst-case load
transient is an unloading transient that happens when the
input voltage is the highest and when the present switching
cycle has just finished. The corresponding minimum capacitance is calculated as follows:
When using ceramic input capacitors, care must be taken to
limit transient voltage spikes during turn on. These spikes
can be greater than twice the nominal input voltage and can
easily exceed the maximum rating of the device.
Using an additional tantalum or other high ESR capacitor at
the input is usually effective in dampening input spikes and
protecting the device during turn on.
OUTPUT CAPACITOR SELECTION
In applications that exhibit large and fast load current
swings, the slew rate of such a load current transient may be
beyond the response speed of the regulator. Therefore, to
meet voltage transient requirements during worst-case load
transients, special consideration should be given to output
capacitor selection. The total combined ESR of the output
capacitors must be lower than a certain value, while the total
capacitance must be greater than a certain value. Also, in
applications where the specification of output voltage regulation is tight and ripple voltage must be low, starting from the
required output voltage ripple will often result in fewer design
iterations.
Notice it is already assumed the total ESR, Re, is no greater
than Re_max, otherwise the term under the square root will
be a negative value. Also, it is assumed that L has already
been selected, therefore the minimum L value should be
calculated before Cmin and after Re (see Inductor Selection
below). Example: Re = 20mΩ, Vnom = 5V, ∆Vc_s = 160mV,
∆Ic_s = 3A, L = 8µH
ALLOWED TRANSIENT VOLTAGE EXCURSION
The allowed output voltage excursion during a load transient
(∆Vc_s) is:
Generally speaking, Cmin decreases with decreasing Re,
∆Ic_s, and L, but with increasing Vnom and ∆Vc_s.
Where ± δ% is the output voltage regulation window and
± e% is the output voltage initial accuracy.
Example: Vnom = 5V, δ% = 7%, e% = 3.4%, Vrip = 40mV
peak to peak.
Inductor Selection
The size of the output inductor can be determined from the
desired output ripple voltage, Vrip, and the impedance of the
output capacitors at the switching frequency. The equation to
determine the minimum inductance value is as follows:
Since the ripple voltage is included in the calculation of
∆Vc_s, the inductor ripple current should not be included in
the worst-case load current excursion. That is, the worstcase load current excursion should be simply maximum load
current change specification, ∆Ic_s.
In the above equation, Re is used in place of the impedance
of the output capacitors. This is because in most cases, the
impedance of the output capacitors at the switching frequency is very close to Re. In the case of ceramic capacitors, replace Re with the true impedance.
The actual selection process usually involves several iterations of all of the above steps, from ripple voltage selection,
to capacitor selection, to inductance calculations. Both the
highest and the lowest input and output voltages and load
MAXIMUM ESR CALCULATION
Unless the rise and fall times of a load transient are slower
than the response speed of the control loop, if the total
combined ESR (Re) is too high, the load transient requirement will not be met, no matter how large the capacitance.
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18
termine switching losses is through bench testing. The equation for calculating the on resistance of the top FET is thus:
(Continued)
transient requirements should be considered. If an inductance value larger than Lmin is selected, make sure that the
Cmin requirement is not violated.
Since inductor ripple current is often the criterion for selecting an output inductor, it is a good idea to double-check this
value. The equation is:
When using FETs in parallel, the same guidelines apply to
the top FET as apply to the bottom FET.
Where D is the duty cycle, defined by Vnom/Vin.
Also important is the ripple content, which is defined by Irip
/Inom. Generally speaking, a ripple content of less than 50%
is ok. Larger ripple content will cause too much loss in the
inductor.
Loop Compensation
The general purpose of loop compensation is to meet static
and dynamic performance requirements while maintaining
stability. Loop gain is what is usually checked to determine
small-signal performance. Loop gain is equal to the product
of control-output transfer function and the output-control
transfer function (the compensation network transfer function). Generally speaking it is a good idea to have a loop gain
slope that is -20dB /decade from a very low frequency to well
beyond the crossover frequency. The crossover frequency
should not exceed one-fifth of the switching frequency, i.e.
60kHz in the case of LM2648. The higher the bandwidth is,
the faster the load transient response speed will potentially
be. However, if the duty cycle saturates during a load transient, further increasing the small signal bandwidth will not
help. Since the control-output transfer function usually has
very limited low frequency gain, it is a good idea to place a
pole in the compensation at zero frequency, so that the low
frequency gain will be relatively large. A large DC gain
means high DC regulation accuracy (i.e. DC voltage
changes little with load or line variations). The rest of the
compensation scheme depends highly on the shape of the
control-output plot.
Channel 3
When choosing the inductor, the saturation current should
be higher than the maximum peak inductor current and the
RMS current rating should be higher than the maximum load
current.
MOSFET Selection
BOTTOM FET SELECTION
During normal operation, the bottom FET is switching on and
off at almost zero voltage. Therefore, only conduction losses
are present in the bottom FET. The most important parameter when selecting the bottom FET is the on resistance
(Rdson). The lower the on resistance, the lower the power
loss. The bottom FET power loss peaks at maximum input
voltage and load current. The equation for the maximum
allowed on resistance at room temperature for a given FET
package, is:
where Tj_max is the maximum allowed junction temperature
in the FET, Ta_max is the maximum ambient temperature,
Rθja is the junction-to-ambient thermal resistance of the FET,
and TC is the temperature coefficient of the on resistance
which is typically in the range of 10,000ppm/˚C.
If the calculated Rdson_max is smaller than the lowest value
available, multiple FETs can be used in parallel. This effectively reduces the Imax term in the above equation, thus
reducing Rdson. When using two FETs in parallel, multiply
the calculated Rdson_max by 4 to obtain the Rdson_max for
each FET. In the case of three FETs, multiply by 9.
20059614
FIGURE 5. Control-Output Transfer Function
TOP FET SELECTION
The top FET has two types of losses: switching loss and
conduction loss. The switching losses mainly consist of
crossover loss and bottom diode reverse recovery loss.
Since it is rather difficult to estimate the switching loss, a
general starting point is to allot 60% of the top FET thermal
capacity to switching losses. The best way to precisely de-
As shown in Figure 5, the control-output transfer function
consists of one pole (fp), one zero (fz), and a double pole at
fn (half the switching frequency). The following can be done
to create a -20dB /decade roll-off of the loop gain: Place the
first pole at 0Hz, the first zero at fp, the second pole at fz,
and the second zero at fn. The resulting output-control transfer function is shown in Figure 6.
19
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LM2648
Component Selection
LM2648
Component Selection
Example: B = 3.3V/V, gm = 650 µmho, R1 = 20kΩ, R2 =
60.4kΩ:
(Continued)
Bandwidth will vary proportional to the value of Rc1. Next,
Cc1 can be determined with the following equation:
Example: fpmin = 363 Hz, Rc1 = 20kΩ:
20059612
FIGURE 6. Output-Control Transfer Function
The control-output corner frequencies, and thus the desired
compensation corner frequencies, can be determined approximately by the following equations:
The value of Cc1 should be within the range determined by
fpmin/max. A higher value will generally provide a more
stable loop, but too high a value will slow the transient
response time.
The compensation network (Figure 7) will also introduce a
low frequency pole which will be close to 0Hz.
A second pole should also be placed at fz. This pole can be
created with a single capacitor Cc2 and a shorted Rc2 (see
Figure 7). The minimum value for this capacitor can be
calculated by:
Since fp is determined by the output network, it will shift with
loading (Ro) and duty cycle. First determine the range of
frequencies (fpmin/max) of the pole across the expected
load range, then place the first compensation zero within that
range.
Example: Re = 20mΩ, Co = 100µF, L = 8 µH, Romax =
5V/100mA = 50Ω, Romin = 5V/3A = 1.7Ω:
Cc2 may not be necessary, however it does create a more
stable control loop. Under high load current conditions, Cc2
can also help reduce noise in the control loop. For this
purpose a typical value of approximately 220pF is recommended, regardless of the calculated value below.
Example: fz = 80 kHz, Rc1 = 20kΩ:
A second zero can also be added with a resistor in series
with Cc2. If used, this zero should be placed at fn, where the
control to output gain rolls off at -40dB/dec. Generally, fn will
be well below the 0dB level and thus will have little effect on
stability. Rc2 can be calculated with the following equation:
Once the fp range is determined, Rc1 should be calculated
using:
Where B is the desired gain in V/V at fp, gm is the transconductance of the error amplifier, and R1 and R2 are the
feedback resistors. A gain value around 10dB (3.3V/V) is
generally a good starting point.
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20
LM2648
Component Selection
(Continued)
20059674
FIGURE 7. Ch.3 Compensation Network
Channel 1 and 2
20059693
Because the loop characteristics for channels 1 and 2 do not
change with loading, the compensation network is somewhat
more straightforward than for channel 3. As shown in Figure
8, the control-output transfer function consists of one double
pole and one zero.
FIGURE 9. Output-Control Transfer Function
The power stage double pole and zero frequencies are given
by the following equations:
Double Pole:
Zero:
The voltage mode compensation network is shown below.
20059692
FIGURE 8. Control-Output Transfer Function
Therefore, three poles and two zeros are required from the
compensation network. The resulting output-control transfer
function is shown in Figure 9
20059691
FIGURE 10. Ch. 1 and 2 Compensation Network
The compensation network creates the first pole at 0Hz. The
other poles and zeros can be calculated by the following
equations:
Pole2:
Pole3: (if Cc1 >> Cc2)
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LM2648
Component Selection
PROCEDURE
(Continued)
The following procedure will create a 20dB/decade loop gain
roll-off. First set fz2 approximately one half decade above
fdp. Since this zero is set using one of the feedback resistors, the output voltage may have to be re-adjusted using
Rfb1 after the compensation has been set. Also, the DC loop
gain will increase as Rfb2 decreases.
Next, set fz1 approximately one half decade below fdp.
Zero1:
Set fp2 to be equal to fzESR.
Finally, set fp3 to 150kHz (half the switching frequency).
Once the compensation has been set, the bandwidth can be
most easily varied by using Rc2 to shift fp2, or by using Cc2
to shift fp3.
Zero2: (if Rfb2 >> Rc2)
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22
inches (millimeters)
56-Lead TSSOP Package
Order Number LM2648MTD
NS Package Number MTD56
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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LM2648 Two-Phase, Synchronous Step-Down 3-Channel Switching Regulator Controller
Physical Dimensions
unless otherwise noted